公开(公告)号：US08062491B1

公开(公告)日：2011-11-22

申请号：US12154017

申请日：2008-06-20

Applicant: Jen-Jr Gau

Inventor： Jen-Jr Gau

IPC: G01N27/327

CPC classification number: B01L3/5088 ,  B01J2219/00317 ,  B01J2219/00497 ,  B01J2219/00585 ,  B01J2219/00596 ,  B01J2219/00605 ,  B01J2219/0061 ,  B01J2219/00612 ,  B01J2219/00617 ,  B01J2219/00619 ,  B01J2219/00621 ,  B01J2219/0063 ,  B01J2219/00637 ,  B01J2219/00653 ,  B01J2219/00659 ,  B01J2219/00702 ,  B01J2219/00722 ,  B01J2219/00725 ,  B81C2201/0133 ,  B82Y30/00 ,  C12Q1/68 ,  C12Q1/6876 ,  C12Q2600/156 ,  C40B40/06 ,  C40B40/10 ,  C40B60/14 ,  G01N27/3277

Abstract: A microelectromechanical systems (MEMS) and integrated circuit (IC) based biosensor capable of sensing or detecting various ionic molecules and macromelecules (DNA, RNA or protein). The MEMS based biosensor utilizes a hybridization and enzyme amplification scheme and an electrochemical detection scheme for sensitivity improvement and system miniaturization. The biosensor or biosensors are incorporated on a single substrate. Preferably, the biosensor system includes at least two electrodes. The electrodes includes a working electrode, a reference electrode and a counter (auxiliary) electrode. The biosensor or biosensors also provide an apparatus and method for confinement of reagent and/or solution in the biosensor or biosensors using surface tension at small scale. The confinement system provides controlled contacts between the reagent(s) and/or solution(s) with the components (i.e., electrodes) of the biosensor or biosensors using controllable surface properties and surface tension forces. The confinement system allows for incorporation of the biosensor or biosensors into a portable or handheld device and is immune to shaking and/or flipping. The invention also provides for a biosensor and/or sensors that are integrated with integrated circuit (IC) technologies. Preferably, the entire sensor system or systems are fabricated on a single IC substrate or chip and no external component and/or instrument is required for a complete detection system or systems. Preferably, the sensor system or systems are fabricated using the IC process and on a silicon substrate.

Abstract translation: 基于微机电系统（MEMS）和基于集成电路（IC）的生物传感器能够感测或检测各种离子分子和大分子（DNA，RNA或蛋白质）。 基于MEMS的生物传感器利用杂交和酶扩增方案和用于灵敏度改善和系统小型化的电化学检测方案。 生物传感器或生物传感器结合在单个基底上。 优选地，生物传感器系统包括至少两个电极。 电极包括工作电极，参考电极和计数器（辅助）电极。 生物传感器或生物传感器还提供了使用小规模的表面张力限制生物传感器或生物传感器中的试剂和/或溶液的装置和方法。 限制系统使用可控的表面性质和表面张力提供试剂和/或溶液与生物传感器或生物传感器的组分（即电极）之间的受控接触。 限制系统允许将生物传感器或生物传感器并入便携式或手持式装置中，并且不受摇动和/或翻转的影响。 本发明还提供了与集成电路（IC）技术集成的生物传感器和/或传感器。 优选地，整个传感器系统或系统制造在单个IC衬底或芯片上，并且对于完整的检测系统或系统不需要外部组件和/或仪器。 优选地，传感器系统或系统使用IC工艺和硅衬底制造。

公开(公告)号：US20110053378A1

公开(公告)日：2011-03-03

申请号：US12546855

申请日：2009-08-25

Applicant: Frank Baiocchi ,  David Kem ,  John DeLucca

Inventor： Frank Baiocchi ,  David Kem ,  John DeLucca

IPC: H01L21/306

CPC classification number: H01L21/31111 ,  B81B2201/042 ,  B81C1/00801 ,  B81C2201/0133

Abstract: An etchant for dielectrics, such as silicon dioxide, that leaves monocrystalline silicon surface exposed by the etchant free of etch damage, such as etch pits, when the etch is done in the presence of transition metals, such as copper, tungsten, titanium, gold, etc. The etchant comprises hydrofluoric acid and a source of halide anion, such as hydrochloric acid or a metal-halide. The etchant is useful in microelectromechanical system device fabrication and in deprocessing integrated circuits or the like.

Abstract translation: 当在诸如铜，钨，钛，金等的过渡金属存在下进行蚀刻时，使诸如二氧化硅的电介质的蚀刻剂使得由蚀刻剂暴露的单晶硅表面没有蚀刻损伤，例如蚀刻凹坑 等等。蚀刻剂包括氢氟酸和卤素阴离子源，例如盐酸或金属卤化物。 蚀刻剂在微机电系统器件制造和集成电路等的去处理中是有用的。

公开(公告)号：US07879629B2

公开(公告)日：2011-02-01

申请号：US11927810

申请日：2007-10-30

Applicant: Sang-Choon Ko ,  Chi-Hoon Jun ,  Hyeon-Bong Pyo ,  Seon-Hee Park

Inventor： Sang-Choon Ko ,  Chi-Hoon Jun ,  Hyeon-Bong Pyo ,  Seon-Hee Park

IPC: H01L21/00 ,  H01L21/311

CPC classification number: B81C1/00801 ,  B81C2201/0133 ,  B81C2201/0136

Abstract: Provided is a method for manufacturing a floating structure of a MEMS. The method for manufacturing a floating structure of a microelectromechanical system (MEMS), comprising the steps of: a) forming a sacrificial layer including a thin layer pattern doped with impurities on a substrate; b) forming a support layer on the sacrificial layer; c) forming a structure to be floated on the support layer by using a subsequent process; d) forming an etch hole exposing both side portions of the thin layer pattern; and e) removing the sacrificial layer through the etch hole to form an air gap between the support layer and the substrate.

Abstract translation: 提供了一种用于制造MEMS的浮动结构的方法。 一种用于制造微机电系统（MEMS）的浮动结构的方法，包括以下步骤：a）在衬底上形成包含掺杂有杂质的薄层图案的牺牲层; b）在牺牲层上形成支撑层; c）通过使用随后的方法形成浮在支撑层上的结构; d）形成暴露薄层图案的两侧部分的蚀刻孔; 以及e）通过所述蚀刻孔去除所述牺牲层，以在所述支撑层和所述基底之间形成气隙。

公开(公告)号：US07838321B2

公开(公告)日：2010-11-23

申请号：US11312619

申请日：2005-12-20

Applicant: Peter J. Nystrom ,  Nancy Jia ,  Kee Ryu

Inventor： Peter J. Nystrom ,  Nancy Jia ,  Kee Ryu

IPC: H01L21/00

CPC classification number: B81C1/00801 ,  B41J2/14 ,  B41J2/16 ,  B41J2/1626 ,  B41J2/1639 ,  B41J2002/043 ,  B81B2201/052 ,  B81C2201/0109 ,  B81C2201/0133 ,  B81C2201/014

Abstract: This describes a starting structure and method for forming a micro-mechanical device. These devices have several uses in both government and commercial applications. The starting structure can be sold or supplied to others who will then make a final product, or it can be used directly to make a final product. An appropriate use of this starting structure is to make deformable devices useful in an inkjet printing device.

Abstract translation: 这描述了用于形成微机械装置的起始结构和方法。 这些设备在政府和商业应用中都有多种用途。 起始结构可以出售或提供给随后制造最终产品的其他人，或者可以直接用于制造最终产品。 适当地使用该起始结构是使可变形装置在喷墨打印装置中有用。

公开(公告)号：US20090308843A1

公开(公告)日：2009-12-17

申请号：US12375745

申请日：2007-08-02

Applicant: Anthony O'Hara

Inventor： Anthony O'Hara

IPC: C23F1/02 ,  C03C25/62

CPC classification number: B81C1/00476 ,  B81C2201/0133

Abstract: A controlled method of releasing a microstructure comprising a silicon oxide layer located between a substrate layer and a layer to be released from the silicon oxide layer is described. The method comprises the step of exposing the silicon oxide layer to a hydrogen fluoride vapour in a process chamber having controlled temperature and pressure conditions. A by-product of this reaction is water which also acts as a catalyst for the etching process. It is controlled employment of this inherent water source that results in a condensed fluid layer forming, and hence etching taking place, only on the exposed surfaces of the oxide layer. The described method therefore reduces the risk of the effects of capillary induced stiction within the etched microstructure and/or corrosion within the microstructure and the process chamber itself.

Abstract translation: 描述了释放包含位于基底层和要从氧化硅层释放的层之间的氧化硅层的微结构的控制方法。 该方法包括在具有受控温度和压力条件的处理室中将氧化硅层暴露于氟化氢蒸气的步骤。 该反应的副产物是也用作蚀刻工艺的催化剂的水。 控制这种固有水源的使用，导致仅在氧化物层的暴露表面上形成冷凝流体层，因此进行蚀刻。 所描述的方法因此降低了在蚀刻的微结构内的毛细管诱导的静电的影响和/或微结构和处理室本身内的腐蚀的风险。

公开(公告)号：US07597819B1

公开(公告)日：2009-10-06

申请号：US11017108

申请日：2004-12-20

Applicant: Matthew G. Hankins

Inventor： Matthew G. Hankins

IPC: C09K13/00

CPC classification number: C09K13/08 ,  B81C1/00476 ,  B81C2201/0133 ,  C23F11/04 ,  H01L21/31111

Abstract: Etchant solutions comprising a redox buffer can be used during the release etch step to reduce damage to the structural layers of a MEMS device that has noble material films. A preferred redox buffer comprises a soluble thiophosphoric acid, ester, or salt that maintains the electrochemical potential of the etchant solution at a level that prevents oxidation of the structural material. Therefore, the redox buffer preferentially oxidizes in place of the structural material. The sacrificial redox buffer thereby protects the exposed structural layers while permitting the dissolution of sacrificial oxide layers during the release etch.

Abstract translation: 可以在释放蚀刻步骤期间使用包含氧化还原缓冲剂的蚀刻剂溶液，以减少对具有贵金属膜的MEMS器件的结构层的损坏。 优选的氧化还原缓冲液包含可溶性硫代磷酸，酯或盐，其将蚀刻剂溶液的电化学势保持在防止结构材料氧化的水平。 因此，氧化还原缓冲剂优先氧化代替结构材料。 牺牲氧化还原缓冲液因此保护暴露的结构层，同时允许在释放蚀刻期间溶解牺牲氧化物层。

公开(公告)号：US07560037B2

公开(公告)日：2009-07-14

申请号：US11213466

申请日：2005-08-26

Applicant: Bevan Staple ,  Jillian Buriak

Inventor： Bevan Staple ,  Jillian Buriak

IPC: H01B13/00

CPC classification number: B82Y30/00 ,  B81C1/00476 ,  B81C1/00801 ,  B81C2201/0114 ,  B81C2201/0133 ,  B81C2201/0139 ,  B81C2201/053

Abstract: A microelectromechanical structure is formed by depositing sacrificial and structural material over a substrate to form a structural layer on a component electrically attached with the substrate. The galvanic potential of the structural layer is greater than the galvanic potential of the component. At least a portion of the structural material is covered with a protective material that has a galvanic potential less than or equal to the galvanic potential of the component. The sacrificial material is removed with a release solution. At least one of the protective material and release solution is surfactanated, the surfactant functionalizing a surface of the component.

Abstract translation: 通过将牺牲和结构材料沉积在衬底上以在与衬底电连接的部件上形成结构层来形成微机电结构。 结构层的电位大于元件的电位。 结构材料的至少一部分被保护材料覆盖，该保护材料具有小于或等于部件的电位的电位。 牺牲材料用释放溶液除去。 保护材料和释放溶液中的至少一种被表面活性化，表面活性剂对组分的表面进行官能化。

公开(公告)号：US20090011158A1

公开(公告)日：2009-01-08

申请号：US12050209

申请日：2008-03-18

Applicant: YEHOSHUA YESHURUN

Inventor： YEHOSHUA YESHURUN

IPC: B29D22/00 ,  H01L21/00

CPC classification number: B81C1/00111 ,  A61M37/0015 ,  A61M2037/003 ,  A61M2037/0053 ,  B81B2201/055 ,  B81C2201/0132 ,  B81C2201/0133 ,  Y10T428/13

Abstract: A method for forming a hollow microneedle structure includes processing the front side of a wafer to form at least one microneedle projecting from a substrate with a first part of a through-bore, formed by a dry etching process, passing through the microneedle and through a part of a thickness of the substrate. The backside of the wafer is also processed to form a second part of the through-bore by a wet etching process.

Abstract translation: 一种用于形成中空微针结构的方法包括处理晶片的前侧，以形成至少一个从基底突出的微针，该微针具有通过干蚀刻工艺形成的通孔的第一部分，穿过微针并通过 基板厚度的一部分。 晶片的背面也被处理以通过湿蚀刻工艺形成通孔的第二部分。

公开(公告)号：US20080233752A1

公开(公告)日：2008-09-25

申请号：US11927810

申请日：2007-10-30

Applicant: Sang-Choon KO ,  Chi-Hoon JUN ,  Hyeon-Bong PYO ,  Seon-Hee PARK

Inventor： Sang-Choon KO ,  Chi-Hoon JUN ,  Hyeon-Bong PYO ,  Seon-Hee PARK

IPC: H01L21/306

CPC classification number: B81C1/00801 ,  B81C2201/0133 ,  B81C2201/0136

Abstract: Provided is a method for manufacturing a floating structure of a MEMS. The method for manufacturing a floating structure of a microelectromechanical system (MEMS), comprising the steps of: a) forming a sacrificial layer including a thin layer pattern doped with impurities on a substrate; b) forming a support layer on the sacrificial layer; c) forming a structure to be floated on the support layer by using a subsequent process; d) forming an etch hole exposing both side portions of the thin layer pattern; and e) removing the sacrificial layer through the etch hole to form an air gap between the support layer and the substrate.

Abstract translation: 提供了一种用于制造MEMS的浮动结构的方法。 一种用于制造微机电系统（MEMS）的浮动结构的方法，包括以下步骤：a）在衬底上形成包含掺杂有杂质的薄层图案的牺牲层; b）在牺牲层上形成支撑层; c）通过使用随后的方法形成浮在支撑层上的结构; d）形成暴露薄层图案的两侧部分的蚀刻孔; 以及e）通过所述蚀刻孔去除所述牺牲层，以在所述支撑层和所述基底之间形成气隙。

公开(公告)号：US20070291370A1

公开(公告)日：2007-12-20

申请号：US11843677

申请日：2007-08-23

Applicant: Shinichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

Inventor： Shinichi UEHARA ,  Yuko Sato ,  Ken Sumiyoshi ,  Setsuo Kaneko ,  Jin Matsushima

IPC: G02B1/00

CPC classification number: G02B3/0056 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0142 ,  C03C15/00 ,  C03C17/34 ,  C03C2204/08 ,  C03C2218/34 ,  G02B3/0012 ,  G02F1/133526 ,  Y10T428/131 ,  Y10T428/249969 ,  Y10T428/315

Abstract: In a formation method for forming a fine structure in a workpiece (30) containing an etching control component, using an isotropic etching process, a mask (32, 34) having an opening (36) is applied to the workpiece, and the workpiece is etched with an etching solution (38) to thereby form a recess (40), corresponding to a shape of the opening, in a surface of the workpiece. The etching of the workpiece is stopped due to the etching control component eluted out of the workpiece in the etching solution within the recess during the isotropic etching process.

Abstract translation: 在包含蚀刻控制部件的工件（30）中形成精细结构的形成方法中，使用各向同性蚀刻工序，将具有开口（36）的掩模（32,34）施加到工件上，工件为 用蚀刻溶液（38）蚀刻，从而在工件的表面形成对应于开口形状的凹部（40）。 由于在各向同性蚀刻工艺期间蚀刻控制部件在凹陷内的蚀刻溶液中从工件中洗脱出来，停止了工件的蚀刻。