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公开(公告)号：US20170066647A1
公开(公告)日：2017-03-09
申请号：US15354747
申请日：2016-11-17
Inventor： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
CPC classification number: B81C1/00515 , B81B7/0006 , B81B7/0077 , B81B2201/0235 , B81B2203/0315 , B81B2207/07 , B81B2207/095 , B81B2207/096 , B81C1/00293 , B81C1/00301 , B81C2201/0132 , B81C2201/014 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/035 , H01L2224/11
Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.
Abstract translation: 微机电系统（MEMS）装置可以包括在第一基板上的MEMS结构。 MEMS结构包括可移动元件。 在第一衬底上沉积第一导电材料并蚀刻第二衬底中的沟槽。 用第二导电材料填充沟槽并在第二导电材料和第二衬底上沉积第三导电材料。 将第一基板和第二基板接合并使第二基板的背面变薄，从而在沟槽中露出第二导电材料。
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公开(公告)号：US09499396B2
公开(公告)日：2016-11-22
申请号：US14624008
申请日：2015-02-17
Inventor： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
CPC classification number: B81C1/00515 , B81B7/0006 , B81B7/0077 , B81B2201/0235 , B81B2203/0315 , B81B2207/07 , B81B2207/095 , B81B2207/096 , B81C1/00293 , B81C1/00301 , B81C2201/0132 , B81C2201/014 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/035 , H01L2224/11
Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.
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303.发明申请MICROELECTROMECHANICAL SYSTEMS (MEMS) STRUCTURE TO PREVENT STICTION AFTER A WET CLEANING PROCESS 有权微波电化学系统（MEMS）结构在清洁过程之后防止干扰公开(公告)号：US20160318753A1
公开(公告)日：2016-11-03
申请号：US14699070
申请日：2015-04-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chung-Yen Chou
CPC classification number: B81B3/001 , B81B2203/0163 , B81B2207/012 , B81C1/00801 , B81C1/00952 , B81C2201/013 , B81C2201/014 , B81C2203/0792
Abstract: A method for manufacturing a microelectromechanical systems (MEMS) structure with sacrificial supports to prevent stiction is provided. A first etch is performed into an upper surface of a carrier substrate to form a sacrificial support in a cavity. A thermal oxidation process is performed to oxidize the sacrificial support, and to form an oxide layer lining the upper surface and including the oxidized sacrificial support. A MEMS substrate is bonded to the carrier substrate over the carrier substrate and through the oxide layer. A second etch is performed into the MEMS substrate to form a movable mass overlying the cavity and supported by the oxidized sacrificial support. A third etch is performed into the oxide layer to laterally etch the oxidized sacrificial support and to remove the oxidized sacrificial support. A MEMS structure with anti-stiction bumps is also provided.
Abstract translation: 提供了一种用于制造具有牺牲支撑以防止静摩擦的微机电系统（MEMS）结构的方法。 执行第一蚀刻到载体基板的上表面中以在空腔中形成牺牲支撑。 进行热氧化处理以氧化牺牲载体，并形成衬在上表面上并包括氧化牺牲载体的氧化物层。 MEMS衬底在载体衬底上并通过氧化物层结合到载体衬底。 执行第二蚀刻到MEMS衬底中以形成覆盖空腔并由氧化的牺牲支撑支撑的可移动质量。 执行第三蚀刻到氧化物层中以横向蚀刻氧化的牺牲载体并除去氧化的牺牲载体。 还提供了具有抗静电凸块的MEMS结构。
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公开(公告)号：US09469522B2
公开(公告)日：2016-10-18
申请号：US14201453
申请日：2014-03-07
Applicant: Robert Bosch GmbH
Inventor： Andrew Graham , Gary Yama , Gary O'Brien
CPC classification number: B81B3/0021 , B81B2201/0271 , B81B2203/04 , B81B2203/053 , B81C1/00095 , B81C1/00166 , B81C2201/0132 , B81C2201/014 , B81C2201/0177 , B81C2203/0136
Abstract: In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.
Abstract translation: 在一个实施例中，形成平面外电极的方法包括在器件层的上表面上形成氧化物层，蚀刻限定延伸穿过氧化物层的沟槽的蚀刻停止周界，在第一帽层部分上形成 氧化物层的上表面，并且在蚀刻停止周界内限定沟槽，蚀刻延伸穿过第一盖层部分并停止在氧化物层处的第一电极周界，限定沟槽，在第一电极周界限定沟槽内沉积第一材料部分，沉积 在沉积的第一材料部分上方的第二盖层部分，以及用蚀刻停止部分提供横向蚀刻停止物的一部分氧化物层的蒸气。
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公开(公告)号：US09340412B2
公开(公告)日：2016-05-17
申请号：US14444921
申请日：2014-07-28
Applicant: ams International AG
Inventor： Willem Besling , Remco Henricus Wilhelmus Pijnenburg , Casper van der Avoort , Marten Oldsen , Martijn Goossens
CPC classification number: B81C1/00158 , B81C1/00246 , B81C2201/014 , G01L9/0042 , G01L9/0072 , G01L9/0073 , G01L9/12 , H01L29/84
Abstract: Embodiments of a method for forming a suspended membrane include depositing a first electrically conductive material above a sacrificial layer and within a boundary trench. The first electrically conductive material forms a corner transition portion above the boundary trench. The method further includes removing a portion of the first electrically conductive material that removes at least a portion of uneven topography of the first electrically conductive material. The method further includes depositing a second electrically conductive material. The second electrically conductive material extends beyond the boundary trench. The method further includes removing the sacrificial layer through etch openings and forming a cavity below the second electrically conductive material. The first electrically conductive material defines a portion of a sidewall boundary of the cavity.
Abstract translation: 用于形成悬浮膜的方法的实施例包括在牺牲层之上和边界沟槽内沉积第一导电材料。 第一导电材料在边界沟槽上方形成角部过渡部分。 该方法还包括去除第一导电材料的一部分，其去除第一导电材料的不均匀的形貌的至少一部分。 该方法还包括沉积第二导电材料。 第二导电材料延伸超过边界沟槽。 该方法还包括通过蚀刻开口移除牺牲层并在第二导电材料下方形成空腔。 第一导电材料限定空腔的侧壁边界的一部分。
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Patent Agency Ranking
306.发明申请METHOD FOR MANUFACTURING A PROTECTIVE LAYER AGAINST HF ETCHING, SEMICONDUCTOR DEVICE PROVIDED WITH THE PROTECTIVE LAYER AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 审中-公开用于制造抗蚀层的保护层的方法，用保护层提供的半导体器件及制造半导体器件的方法公开(公告)号：US20160130140A1
公开(公告)日：2016-05-12
申请号：US14982380
申请日：2015-12-29
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Stefano LOSA , Raffaella PEZZUTO , Roberto CAMPEDELLI , Matteo PERLETTI , Luigi ESPOSITO , Mikel Azpeitia URQUIA
IPC: B81C1/00
CPC classification number: H01L21/02178 , B81B7/0032 , B81B2201/0235 , B81B2201/0242 , B81C1/00595 , B81C1/00801 , B81C2201/014 , B81C2201/053 , H01L21/0228
Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.
Abstract translation: 一种用于制造用于保护中间结构层以防止用氢氟酸蚀刻的保护层的方法，所述中间结构层由可被氢氟酸蚀刻或损坏的材料制成，所述方法包括以下步骤：形成第一层 氧化铝，通过原子层沉积在中间结构层上; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层; 通过原子层沉积在第一中间保护层之上形成第二层氧化铝; 并在第二氧化铝层上进行热结晶处理，形成第二中间保护层，从而完成保护层的形成。 形成保护层的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。
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公开(公告)号：US09267857B2
公开(公告)日：2016-02-23
申请号：US14543074
申请日：2014-11-17
Applicant: Honeywell International Inc.
Inventor： Carl Stewart , Richard Davis , Gilberto Morales
CPC classification number: B81C1/00158 , B81B3/0021 , B81B3/007 , B81B2201/0264 , B81B2203/0127 , B81C2201/014 , B81C2201/0198 , B81C2203/0728 , G01L7/08 , G01L9/0042 , G01L9/0044 , G01L9/0047 , G01L9/0054 , G01L9/0055
Abstract: A pressure sensor having a diaphragm having a boss with a pattern. The diaphragm having a boss may be regarded as a bossed diaphragm. The bossed diaphragm may have higher sensitivity than a flat plate diaphragm having the same area as the bossed diaphragm. The bossed diaphragm may incorporate a simple cross pattern that can further improve the sensitivity and linearity of a pressure response of the diaphragm at low pressures. Reduction of sharp edges and corners of the boss and its legs around the periphery of the diaphragm may reduce high stress points and thus increase the burst pressure rating of the bossed diaphragm.
Abstract translation: 一种压力传感器，具有具有带图案的凸台的隔膜。 具有凸台的隔膜可以被认为是凸起的隔膜。 凸起的隔膜可能具有比具有与凸起隔膜相同面积的平板隔膜更高的灵敏度。 凸起的隔膜可以包括简单的交叉图案，其可以进一步提高隔膜在低压下的压力响应的灵敏度和线性。 凸起及其围绕隔膜周边的腿的尖锐边缘和拐角的减小可能会降低高应力点，从而提高凸起隔膜的爆破压力等级。
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公开(公告)号：US20160023893A1
公开(公告)日：2016-01-28
申请号：US14444921
申请日：2014-07-28
Applicant: ams International AG
Inventor： Willem Besling , Remco Henricus Wilhelmus Pijnenburg , Casper van der Avoort , Marten Oldsen , Martijn Goossens
CPC classification number: B81C1/00158 , B81C1/00246 , B81C2201/014 , G01L9/0042 , G01L9/0072 , G01L9/0073 , G01L9/12 , H01L29/84
Abstract: Embodiments of a method for forming a suspended membrane include depositing a first electrically conductive material above a sacrificial layer and within a boundary trench. The first electrically conductive material forms a corner transition portion above the boundary trench. The method further includes removing a portion of the first electrically conductive material that removes at least a portion of uneven topography of the first electrically conductive material. The method further includes depositing a second electrically conductive material. The second electrically conductive material extends beyond the boundary trench. The method further includes removing the sacrificial layer through etch openings and forming a cavity below the second electrically conductive material. The first electrically conductive material defines a portion of a sidewall boundary of the cavity.
Abstract translation: 用于形成悬浮膜的方法的实施例包括在牺牲层之上和边界沟槽内沉积第一导电材料。 第一导电材料在边界沟槽上方形成角部过渡部分。 该方法还包括去除第一导电材料的一部分，其去除第一导电材料的不均匀的形貌的至少一部分。 该方法还包括沉积第二导电材料。 第二导电材料延伸超过边界沟槽。 该方法还包括通过蚀刻开口移除牺牲层并在第二导电材料下方形成空腔。 第一导电材料限定空腔的侧壁边界的一部分。
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公开(公告)号：US09156681B2
公开(公告)日：2015-10-13
申请号：US13963409
申请日：2013-08-09
Applicant: DONGBU HITEK CO., LTD.
Inventor： Chung Kyung Jung , Ki Jun Yun , Oh Jin Jung , Sang Wook Ryu , Seong Hun Jeong , Sung Wook Joo
CPC classification number: B81C1/00015 , B81B3/0018 , B81B2201/018 , B81C1/00801 , B81C2201/014
Abstract: Method for manufacturing a semiconductor device includes the steps of forming a lower electrode pattern on a substrate, forming a first interlayer insulating layer on the lower electrode pattern, forming an upper electrode pattern on the first interlayer insulating layer, forming a second interlayer insulating layer on the upper electrode pattern, forming an etch blocking layer on a side of the upper electrode pattern, wherein the etch blocking layer passes through the first interlayer insulating layer, forming a cavity which exposes the side of the etch blocking layer by etching the second interlayer insulating layer, and forming a contact ball in the cavity.
Abstract translation: 制造半导体器件的方法包括以下步骤：在衬底上形成下电极图案，在下电极图案上形成第一层间绝缘层，在第一层间绝缘层上形成上电极图案，在第一层间绝缘层上形成第二层间绝缘层 所述上电极图案在所述上电极图案的一侧上形成蚀刻阻挡层，其中所述蚀刻阻挡层穿过所述第一层间绝缘层，形成通过蚀刻所述第二层间绝缘体而暴露所述蚀刻阻挡层侧的空腔 并且在空腔中形成接触球。
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310.发明申请Material quality, suspended material structures on lattice-mismatched substrates 有权材料质量，晶格失配衬底上的悬浮材料结构公开(公告)号：US20150102465A1
公开(公告)日：2015-04-16
申请号：US14512158
申请日：2014-10-10
Inventor： Robert Chen , James S. Harris, JR. , Suyog Gupta
IPC: H01L29/06 , H01L21/02 , H01L21/306 , H01L29/161 , H01L29/16
CPC classification number: H01L21/02535 , B81C1/00111 , B81C1/00571 , B81C2201/014 , B82Y10/00 , B82Y40/00 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/02507 , H01L21/02532 , H01L21/0262 , H01L21/3065 , H01L29/0665 , H01L29/0676 , H01L29/161 , H01S5/1075 , H01S5/3427
Abstract: Suspended structures are provided using selective etch technology. Such structures can be protected on all sides when the selective undercut etch is performed, thereby providing excellent control of feature geometry combined with superior material quality.
Abstract translation: 使用选择性蚀刻技术提供悬挂结构。 当执行选择性底切蚀刻时，可以在所有侧面上保护这种结构，从而提供优异的特征几何结合优良的材料质量控制。
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