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    Field emission electron source
    304.
    发明授权
    Field emission electron source 失效
    场发射电子源

    公开(公告)号：US08405294B2

    公开(公告)日：2013-03-26

    申请号：US12343396

    申请日：2008-12-23

    Applicant: Takahiro Matsumoto ,  Yoichiro Neo

    Inventor： Takahiro Matsumoto ,  Yoichiro Neo

    IPC: H01J1/00 ,  H01J19/06

    CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30446

    Abstract: A field emission electron source for emitting electrons under applied electric field includes a cold cathode having molecules of an aromatic compound vapor-deposited thereon at a pointed end of said cold cathode.

    Abstract translation: 用于在施加的电场下发射电子的场致发射电子源包括在所述冷阴极的尖端处具有气相沉积在其上的芳族化合物分子的冷阴极。

    Gate controlled field emission triode and process for fabricating the same
    305.
    发明授权
    Gate controlled field emission triode and process for fabricating the same 有权
    门控场发射三极管及其制造方法

    公开(公告)号：US08267734B2

    公开(公告)日：2012-09-18

    申请号：US12386161

    申请日：2009-04-14

    Applicant: Chia-Ying Lee ,  Seu-Yi Li ,  Pang Lin ,  Tseung-Yuan Tseng

    Inventor： Chia-Ying Lee ,  Seu-Yi Li ,  Pang Lin ,  Tseung-Yuan Tseng

    IPC: H01J9/00

    CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30446

    Abstract: This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.

    Abstract translation: 本发明涉及一种用于制造低温下具有高纵横比的ZnO纳米线的方法，其与半导体制造工艺相关，并且获得了栅极控制的场致发射三极管。 该方法包括提供半导体衬底，分别在半导体衬底上沉积电介质层和导电层，限定电介质层和导电层上的发射极阵列的位置，将沉积超薄ZnO膜作为接种层 衬底，通过使用水热法生长ZnO纳米线作为发射极阵列，并蚀刻除发射极阵列之外的区域，然后获得栅极控制的场致发射三极管。

    Boron nitride thin-film emitter and production method thereof, and electron emitting method using boron nitride thin-film emitter
    308.
    发明授权
    Boron nitride thin-film emitter and production method thereof, and electron emitting method using boron nitride thin-film emitter 失效
    氮化硼薄膜发射体及其制造方法以及使用氮化硼薄膜发射体的电子发射方法

    公开(公告)号：US07947243B2

    公开(公告)日：2011-05-24

    申请号：US11665250

    申请日：2005-12-21

    Applicant: Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

    Inventor： Shojiro Komatsu ,  Yusuke Moriyoshi ,  Katsuyuki Okada

    IPC: C01B35/00 ,  C01B21/064 ,  C01B25/00 ,  C01D3/02 ,  H01J11/04 ,  C23C14/28 ,  C23C16/00 ,  B05D3/02 ,  B05D3/00 ,  H05H1/24 ,  B01J19/12 ,  H01L21/4763

    CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/30446

    Abstract: Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission.In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include sp3 bonded boron nitride, sp2 bonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

    Abstract translation: 基于关于氮化硼薄膜的设计，每个氮化硼薄膜包括场致发射性能优异的急端形状的氮化硼晶体，以及采用这种薄膜的发射体的设计，旨在适当地控制这种晶体的分布状态 提供具有优异效率的发射极，因此仅需要较低的电子发射阈值电场。 在包含各自由通式BN表示的晶体的氮化硼薄膜发射体的设计中，每个都包含sp 3键合的氮化硼，sp2结合的氮化硼或其混合物，并且每个都显示出急剧的形状 场电子发射特性优异; 当从气相沉积发射体时，控制衬底相对于反应气体流的角度，从而控制晶体在薄膜表面上的分布状态。

    Device for generating X-rays and use of such a device
    310.
    发明授权
    Device for generating X-rays and use of such a device 有权
    用于产生X射线和使用这种装置的装置

    公开(公告)号：US07839978B2

    公开(公告)日：2010-11-23

    申请号：US12158749

    申请日：2006-12-22

    Applicant: Godefridus Hendricus Maria Gubbels ,  Johannes Petrus Zijp

    Inventor： Godefridus Hendricus Maria Gubbels ,  Johannes Petrus Zijp

    IPC: H01J35/00 ,  H01J35/06

    CPC classification number: H01J1/30 ,  B82Y10/00 ,  H01J1/312 ,  H01J35/065 ,  H01J2201/30446 ,  H01J2201/308

    Abstract: Device for generating X-rays, comprising: a field emission cathode (10) configured to emit electrons when an electrical field is applied to the cathode (10); and an anode (20), the anode being configured to generate X-rays as a result of receiving electrons from the field emission cathode (10); wherein the cathode (10) comprises an electron emission surface (S) extending opposite the anode (20), the cathode (10) being configured to emit electrons substantially from the electron emission surface (S) during use.

    Abstract translation: 用于产生X射线的装置，包括：场致发射阴极（10），被配置成当电场施加到阴极（10）时发射电子; 和阳极（20），阳极被配置为由于从场致发射阴极（10）接收电子而产生X射线; 其中阴极（10）包括与阳极（20）相对延伸的电子发射表面（S），阴极（10）构造成在使用期间基本上从电子发射表面（S）发射电子。

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