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    METHOD OF FABRICATING INTEGRATED STRUCTURE FOR MEMS DEVICE AND SEMICONDUCTOR DEVICE
    312.
    发明申请
    METHOD OF FABRICATING INTEGRATED STRUCTURE FOR MEMS DEVICE AND SEMICONDUCTOR DEVICE 有权
    制造MEMS器件和半导体器件的集成结构的方法

    公开(公告)号：US20150004732A1

    公开(公告)日：2015-01-01

    申请号：US14489495

    申请日：2014-09-18

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Bang-Chiang Lan ,  Li-Hsun Ho ,  Wei-Cheng Wu ,  Hui-Min Wu ,  Min Chen ,  Tzung-I Su ,  Chien-Hsin Huang

    IPC: B81C1/00

    CPC classification number: B81C1/00246 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0742 ,  B81C2203/0792 ,  H01L27/0688

    Abstract: A method of fabricating an integrated structure for MEMS device and semiconductor device comprises steps of: providing a substrate having a transistor thereon in a semiconductor device region and a first MEMS component thereon in a MEMS region; performing a interconnect process on the substrate in the semiconductor device region to form a plurality of first dielectric layers, at least a conductive plug and at least a conductive layer in the first dielectric layers; forming a plurality of second dielectric layers and an etch stopping device in the second dielectric layers on the substrate in a etch stopping device region; forming a plurality of third dielectric layers and at least a second MEMS component in the third dielectric layers on the substrate in the MEMS region; and performing an etching process to remove the third dielectric layers in the MEMS region.

    Abstract translation: 制造用于MEMS器件和半导体器件的集成结构的方法包括以下步骤：在半导体器件区域中提供其上具有晶体管的衬底及其中的MEMS区域中的第一MEMS部件; 在所述半导体器件区域中的所述衬底上执行互连处理，以形成多个第一电介质层，所述第一介电层中的至少导电插塞和至少导电层; 在蚀刻停止装置区域中在衬底上的第二介电层中形成多个第二电介质层和蚀刻停止装置; 在MEMS区域中的衬底上的第三电介质层中形成多个第三电介质层和至少第二MEMS部件; 并执行蚀刻工艺以去除MEMS区域中的第三介电层。

    Low temperature ceramic microelectromechanical structures
    313.
    发明授权
    Low temperature ceramic microelectromechanical structures 有权
    低温陶瓷微机电结构

    公开(公告)号：US08658452B2

    公开(公告)日：2014-02-25

    申请号：US13003328

    申请日：2009-07-08

    Applicant: Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

    Inventor： Mourad El-Gamal ,  Frederic Nabki ,  Paul-Vahe Cicek

    IPC: H01L21/00 ,  H01L27/14

    CPC classification number: B81C1/00666 ,  B81B3/0021 ,  B81B7/008 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0271 ,  B81B2201/03 ,  B81B2207/015 ,  B81B2207/03 ,  B81C1/00063 ,  B81C1/00246 ,  B81C1/00396 ,  B81C1/00587 ,  B81C2201/014 ,  B81C2201/0169 ,  B81C2201/0174 ,  B81C2203/0721 ,  B81C2203/0735

    Abstract: A method of providing microelectromechanical structures (MEMS) that are compatible with silicon CMOS electronics is provided. The method providing for processes and manufacturing sequences limiting the maximum exposure of an integrated circuit upon which the MEMS is manufactured to below 350° C., and potentially to below 250° C., thereby allowing direct manufacturing of the MEMS devices onto electronics, such as Si CMOS circuits. The method further providing for the provisioning of MEMS devices with multiple non-conductive structural layers such as silicon carbide separated with small lateral gaps. Such silicon carbide structures offering enhanced material properties, increased environmental and chemical resilience whilst also allowing novel designs to be implemented taking advantage of the non-conductive material of the structural layer. The use of silicon carbide being beneficial within the formation of MEMS elements such as motors, gears, rotors, translation drives, etc where increased hardness reduces wear of such elements during operation.

    Abstract translation: 提供了一种提供与硅CMOS电子器件兼容的微机电结构（MEMS）的方法。 该方法提供了将MEMS制造的集成电路的最大曝光限制在低于350℃并可能低于250℃的工艺和制造顺序，从而允许将MEMS器件直接制造到电子器件上，例如 作为Si CMOS电路。 该方法进一步提供具有多个非导电结构层的MEMS器件，例如用小的侧向间隙分离的碳化硅。 这种碳化硅结构提供增强的材料性能，增加环境和化学弹性，同时还允许利用结构层的非导电材料来实现新颖的设计。 在形成MEMS元件（例如马达，齿轮，转子，平移驱动器等）中使用碳化硅是有益的，其中增加的硬度降低了操作期间这些元件的磨损。

    HYBRID INTERGRATED COMPONENT AND METHOD FOR THE MANUFACTURE THEREOF
    314.
    发明申请
    HYBRID INTERGRATED COMPONENT AND METHOD FOR THE MANUFACTURE THEREOF 有权
    混合互联组件及其制造方法

    公开(公告)号：US20130299927A1

    公开(公告)日：2013-11-14

    申请号：US13888920

    申请日：2013-05-07

    Applicant: Axel Franke ,  Patrick Wellner ,  Lars Tebje

    Inventor： Axel Franke ,  Patrick Wellner ,  Lars Tebje

    IPC: B81B3/00 ,  B81C1/00

    CPC classification number: B81B3/0075 ,  B81C1/00626 ,  B81C1/00674 ,  B81C2201/0112 ,  B81C2201/014 ,  B81C2203/0109

    Abstract: Measures are proposed by which the design freedom is significantly increased in the case of the implementation of the micromechanical structure of the MEMS element of a component, which includes a carrier for the MEMS element and a cap for the micromechanical structure of the MEMS element, the MEMS element being mounted on the carrier via a standoff structure. The MEMS element is implemented in a layered structure, and the micromechanical structure of the MEMS element extends over at least two functional layers of this layered structure, which are separated from one another by at least one intermediate layer.

    Abstract translation: 提出的措施是，在实现元件的MEMS元件的微机械结构的情况下，设计自由度显着增加，其包括用于MEMS元件的载体和用于MEMS元件的微机械结构的盖， MEMS元件通过支架结构安装在载体上。 MEMS元件以分层结构实现，并且MEMS元件的微机械结构在该分层结构的至少两个功能层上延伸，所述功能层通过至少一个中间层彼此分离。

    Controlling electromechanical behavior of structures within a microelectromechanical systems device
    317.
    发明授权
    Controlling electromechanical behavior of structures within a microelectromechanical systems device 失效
    控制微机电系统设备内结构的机电行为

    公开(公告)号：US08278726B2

    公开(公告)日：2012-10-02

    申请号：US12861778

    申请日：2010-08-23

    Applicant: Mark W. Miles ,  John Batey ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    Inventor： Mark W. Miles ,  John Batey ,  Clarence Chui ,  Manish Kothari ,  Ming-Hau Tung

    IPC: H01L29/84

    CPC classification number: B81B3/0086 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2201/053 ,  G02B26/001

    Abstract: In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device.

    Abstract translation: 在一个实施例中，本发明提供一种用于制造微机电系统装置的方法。 该方法包括制造包括具有特征机电响应的膜的第一层和特征光学响应，其中特征光学响应是期望的，并且特征机电响应是不期望的; 以及通过在所述微机电系统装置的启动期间至少减少其上的电荷积累来修改所述第一层的特征机电响应。

    Micro-electro-mechanical systems (MEMS) device
    318.
    发明授权
    Micro-electro-mechanical systems (MEMS) device 有权
    微机电系统（MEMS）装置

    公开(公告)号：US08258591B2

    公开(公告)日：2012-09-04

    申请号：US12014810

    申请日：2008-01-16

    Applicant: Chien-Hsing Lee ,  Tsung-Min Hsieh

    Inventor： Chien-Hsing Lee ,  Tsung-Min Hsieh

    IPC: H01L29/84

    CPC classification number: B81C1/00246 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735

    Abstract: The present invention provides a MEMS device, be implemented on many MEMS device, such as MEMS microphone, MEMS speaker, MEMS accelerometer, MEMS gyroscope. The MEMS device includes a substrate. A dielectric structural layer is disposed over the substrate, wherein the dielectric structural layer has an opening to expose the substrate. A diaphragm layer is disposed over the dielectric structural layer, wherein the diaphragm layer covers the opening of the dielectric structural layer to form a chamber. A conductive electrode structure is adapted in the diaphragm layer and the substrate to store nonvolatile charges.

    Abstract translation: 本发明提供了一种MEMS器件，可在诸如MEMS麦克风，MEMS扬声器，MEMS加速度计，MEMS陀螺仪的许多MEMS器件上实现。 MEMS器件包括衬底。 电介质结构层设置在衬底上，其中电介质结构层具有露出衬底的开口。 隔膜层设置在电介质结构层上，其中隔膜层覆盖电介质结构层的开口以形成室。 导电电极结构适用于隔膜层和基板以存储非易失性电荷。

    Microelectromechanical systems structures and self-aligned high aspect-ratio combined poly and single-crystal silicon fabrication processes for producing same
    319.
    发明授权
    Microelectromechanical systems structures and self-aligned high aspect-ratio combined poly and single-crystal silicon fabrication processes for producing same 有权
    微机电系统结构和自对准的高纵横比组合聚晶和单晶硅制造工艺

    公开(公告)号：US07977136B2

    公开(公告)日：2011-07-12

    申请号：US12319650

    申请日：2009-01-10

    Applicant: Farrokh Ayazi ,  Mina Raieszadeh ,  Pezhman Monadgemi

    Inventor： Farrokh Ayazi ,  Mina Raieszadeh ,  Pezhman Monadgemi

    IPC: H01L21/00 ,  H01L21/461

    CPC classification number: H01L21/84 ,  B81B3/0086 ,  B81B2201/0221 ,  B81B2203/0118 ,  B81B2203/033 ,  B81C1/00619 ,  B81C2201/014 ,  H01L27/1203 ,  H01L28/60

    Abstract: Disclosed are one-port and two-port microelectromechanical structures including variable capacitors, switches, and filter devices. High aspect-ratio micromachining is used to implement low-voltage, large value tunable and fixed capacitors, and the like. Tunable capacitors can move in the plane of the substrate by the application of DC voltages and achieve greater than 240 percent of tuning. Exemplary microelectromechanical apparatus comprises a single crystalline silicon substrate, and a conductive structure laterally separated from the single crystalline silicon substrate by first and second high aspect ratio gaps of different size, wherein at least one of the high aspect ratio gaps has an aspect ratio of at least 30:1, and is vertically anchored to the single crystalline silicon substrate by way of silicon nitride.

    Abstract translation: 公开了包括可变电容器，开关和滤波器装置的单端口和双端口微机电结构。 高纵横比微加工用于实现低电压，大值可调和固定电容器等。 可调电容器可以通过施加直流电压在基板的平面内移动，并实现大于240％的调谐。 示例性微电子机械装置包括单晶硅衬底和通过不同尺寸的第一和第二高纵横比间隙横向分离单晶硅衬底的导电结构，其中高纵横比间隙中的至少一个具有在 至少30:1，并且通过氮化硅垂直锚定到单晶硅衬底。

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