Field emitting light source and method for making the same
    312.
    发明授权
    Field emitting light source and method for making the same 有权
    场发射光源及其制作方法

    公开(公告)号:US07728504B2

    公开(公告)日:2010-06-01

    申请号:US11438063

    申请日:2006-05-18

    Abstract: A CNT field emitting light source (20) is provided. The light source includes an anode (202), an anode substrate (201), a cathode (214), a cathode substrate (208), a fluorescent layer (203) and a sealing means (205). The anode is configured on the anode substrate, and the cathode is configured on the cathode substrate. The anode and the cathode are oppositely configured to produce a spatial electrical field when a voltage is applied therebetween. The cathode includes an emitter layer (206), capable of emitting electrodes bombarding the cathode and matters attached thereupon when activated and controlled by the spatial electric field, and a conductive layer (207), sandwiched between the cathode substrate and the emitter layer for providing an electrically connection therebetween. The fluorescent layer is configured on a surface of the anode oppositely facing the emitter layer, so as to produce fluorescence when bombarded by electrodes emitted from the emitter layer.

    Abstract translation: 提供CNT场发射光源(20)。 光源包括阳极(202),阳极基板(201),阴极(214),阴极基板(208),荧光层(203)和密封装置(205)。 阳极构造在阳极基板上,阴极构造在阴极基板上。 阳极和阴极相反地构造成当在其之间施加电压时产生空间电场。 阴极包括发射极层(206),其能够在由空间电场激活和控制时发射轰击阴极的电极和附着于其上的物质;以及夹在阴极衬底和发射极层之间的导电层(207),用于提供 它们之间的电连接。 荧光层配置在阳极的与发射极层相对的表面上,以便在从发射极层发射的电极轰击时产生荧光。

    FIELD EMISSION ELECTRON SOURCE
    313.
    发明申请
    FIELD EMISSION ELECTRON SOURCE 失效
    场发射电子源

    公开(公告)号:US20100033072A1

    公开(公告)日:2010-02-11

    申请号:US12343396

    申请日:2008-12-23

    CPC classification number: H01J1/304 H01J9/025 H01J2201/30446

    Abstract: A field emission electron source for emitting electrons under applied electric field includes a cold cathode having molecules of an aromatic compound vapor-deposited thereon at a pointed end of said cold cathode.

    Abstract translation: 用于在施加的电场下发射电子的场致发射电子源包括在所述冷阴极的尖端处具有气相沉积在其上的芳族化合物分子的冷阴极。

    Device For Generating X-rays And Use Of Such A Device
    314.
    发明申请
    Device For Generating X-rays And Use Of Such A Device 有权
    用于产生X射线和使用这种装置的装置

    公开(公告)号:US20090296888A1

    公开(公告)日:2009-12-03

    申请号:US12158749

    申请日:2006-12-22

    Abstract: Device for generating X-rays, comprising: —a field emission cathode (10) configured to emit electrons when an electrical field is applied to the cathode (10); and—an anode (20), the anode being configured to generate X-rays as a result of receiving electrons from the field emission cathode (10); wherein the cathode (10) comprises an electron emission surface (S) extending opposite the anode (20), the cathode (10) being configured to emit electrons substantially from the electron emission surface (S) during use.

    Abstract translation: 一种用于产生X射线的装置,包括: - 当电场施加到阴极(10)时被配置为发射电子的场致发射阴极(10)。 和阳极(20),阳极被配置为由于从场致发射阴极(10)接收电子而产生X射线; 其中阴极(10)包括与阳极(20)相对延伸的电子发射表面(S),阴极(10)构造成在使用期间基本上从电子发射表面(S)发射电子。

    Field Electron Emission Element, a Method of Manufacturing the Same and a Field Electron Emission Method Using Such an Element as Well as an Emission/Display Device Employing Such a Field Electron Emission Element and a Method of Manufacturing the Same
    315.
    发明申请
    Field Electron Emission Element, a Method of Manufacturing the Same and a Field Electron Emission Method Using Such an Element as Well as an Emission/Display Device Employing Such a Field Electron Emission Element and a Method of Manufacturing the Same 失效
    场电子发射元件,其制造方法和使用这种元件的场电子发射方法以及使用这种场致电子发射元件的发射/显示装置及其制造方法

    公开(公告)号:US20080122370A1

    公开(公告)日:2008-05-29

    申请号:US11792995

    申请日:2005-12-13

    CPC classification number: H01J1/3044 H01J9/025 H01J2201/30446

    Abstract: There are provided an electron emission element that operates stably in the atmosphere, a method of manufacturing the same and a method of emitting field electrons using such an element as well as an emission/display device realized by using a cold cathode electron source having a surface profile showing an excellent field electron characteristic and showing a low electron emission threshold value, a high output level and a long service life.A dilute material gas of rare gas such as argon and/or helium, hydrogen or a mixture gas thereof is used. An electron emission element substrate (4) is held to a temperature level between room temperature and 1,300° C. in an atmosphere where boron source material gas and nitride source material gas are introduced to 0.0001 to 100 volume % relative to the dilute material gas under pressure of 0.001 to 760 Torr, causing plasma to be generated typically by means of a plasma torch (7) or without causing plasma to be generated, and irradiated with ultraviolet rays by means of an excimer ultraviolet laser (6) or the like to make the material gas to react so as to form a boron nitride material containing crystal that has a pointed profile and is expressed by BN on the element substrate in a self-forming manner. The produced boron nitride material operates as field electron emission element that emits electrons stably in the atmosphere when a voltage is applied thereto. The reaction product is taken out from the reaction vessel (1) with the substrate after the end of the reaction and a cold cathode type emission/display device is assembled by using the reaction product as field electron emission source.

    Abstract translation: 提供了在大气中稳定运行的电子发射元件,其制造方法和使用这种元件发射场电子的方法以及通过使用具有表面的冷阴极电子源实现的发射/显示装置 表现出优异的场电子特性,显示出低电子发射阈值,高输出电平和长使用寿命。 使用诸如氩和/或氦,氢气或其混合气体的稀有气体的稀材料气体。 在硼源材料气体和氮化物源材料气体引入的气氛中相对于稀释材料气体将电子发射元件基板(4)保持在室温至1300℃的温度水平, 压力为0.001至760托,通常通过等离子体焰炬(7)产生等离子体,或不产生等离子体,并通过受激准分子紫外线激光(6)等照射紫外线, 所述材料气体反应以形成含有尖锐轮廓的含有晶体的氮化硼材料,并且以自形成方式在BN上在元件基板上表示。 所产生的氮化硼材料作为场电子发射元件工作,当施加电压时,其在大气中稳定地发射电子。 在反应结束后,用反应容器(1)从反应容器(1)中取出反应产物,并使用反应产物作为场电子发射源组装冷阴极发射/显示装置。

    ELECTRON EMISSION MATERIAL AND ELECTRON EMISSION DISPLAY DEVICE HAVING THE SAME
    316.
    发明申请
    ELECTRON EMISSION MATERIAL AND ELECTRON EMISSION DISPLAY DEVICE HAVING THE SAME 审中-公开
    电子发射材料和电子发射显示装置

    公开(公告)号:US20080111466A1

    公开(公告)日:2008-05-15

    申请号:US11876599

    申请日:2007-10-22

    CPC classification number: H01J1/304 H01J31/127 H01J2201/30446

    Abstract: An electron emission material having high electron emission efficiency and long lifespan, and an electron emission device and an electron emission display device having the electron emission material. The electron emission material has a surface to which hydrogen atoms are attached. The electron emission display device includes: a front panel having a phosphor layer; an electron emission device adhered to the front panel with a space therebetween; and a hydrogen emitter in the space defined by the front panel and the electron emission device.

    Abstract translation: 具有高电子发射效率和长寿命的电子发射材料,以及具有电子发射材料的电子发射装置和电子发射显示装置。 电子发射材料具有连接有氢原子的表面。 电子发射显示装置包括:具有荧光体层的前面板; 电子发射装置,其间具有空间粘附到前面板; 以及由前面板和电子发射装置限定的空间中的氢发射体。

    Electron emission device and method of manufacturing the same
    318.
    发明申请
    Electron emission device and method of manufacturing the same 失效
    电子发射装置及其制造方法

    公开(公告)号:US20070252507A1

    公开(公告)日:2007-11-01

    申请号:US11790196

    申请日:2007-04-24

    Inventor: Kwang-Seok Jeong

    CPC classification number: H01J1/304 H01J9/025 H01J31/127 H01J2201/30446

    Abstract: An electron emission device includes a substrate, a first electrode on the substrate, a second electrode electrically insulated from the first electrode, a first insulating layer between the first electrode and the second electrode, an electron emission source hole in the first insulating layer and the second electrode to expose the first electrode, and an electron emission source having a first electron emission material layer on the first electrode in the electron emission source hole and a second electron emission material layer on the first electron emission material layer.

    Abstract translation: 电子发射器件包括衬底,衬底上的第一电极,与第一电极电绝缘的第二电极,第一电极和第二电极之间的第一绝缘层,第一绝缘层中的电子发射源孔和 第二电极,用于暴露第一电极;以及电子发射源,其在电子发射源孔中的第一电极上具有第一电子发射材料层,在第一电子发射材料层上具有第二电子发射材料层。

    Sp3 bonding boron nitride nitride thin film having self-forming surface shape being advantageous in exhibiting property of emitting electric field electrons, method for preparation thereof and use thereof
    319.
    发明申请
    Sp3 bonding boron nitride nitride thin film having self-forming surface shape being advantageous in exhibiting property of emitting electric field electrons, method for preparation thereof and use thereof 审中-公开
    具有自发成形表面形状的Sp 3键氮化硼氮化物薄膜有利于显示发射电场电子的性质,其制备方法及其用途

    公开(公告)号:US20070017700A1

    公开(公告)日:2007-01-25

    申请号:US10569545

    申请日:2004-08-27

    Abstract: The object of the present invention is to provide a material excellent in field electron emission which can withstand the high intensity of electric field, allows the enhanced emission of electrons resulting in a high density of current, and does not degrade during long use. The solving means consists of providing a membrane body of sp3-bonded boron nitride excellent in field electron emission obtained by a method comprising the steps of introducing a reactive gas including a boron source and a nitrogen source into a reaction system; adjusting the temperature of a substrate in the reaction chamber to fall between room temperature to 1300° C.; radiating a UV beam onto the substrate with or without the concomitant existence of plasma; and forming via vapor-phase reaction a membrane on the substrate in which a surface texture allowing excellent field electron emission is formed in a self-organized manner.

    Abstract translation: 本发明的目的是提供一种能够承受高强度电场的场致电子发射的材料,能够增强电子发射,从而产生高密度电流,并且在长期使用中不会降解。 解决方案包括提供通过包括以下步骤的方法获得的场致电子发射极好的sp 3+氮化硼的膜体,所述方法包括以下步骤:将包含硼源和氮源的反应性气体引入到 反应体系; 调节反应室中的基板的温度在室温至1300℃之间。 在有或没有同时存在等离子体的情况下将UV光束照射到衬底上; 并且通过气相反应在基板上形成膜,其中以自组织的方式形成允许优异的场电子发射的表面纹理。

    Field emission tips, arrays, and devices
    320.
    发明申请
    Field emission tips, arrays, and devices 审中-公开
    场发射提示,阵列和设备

    公开(公告)号:US20060267472A1

    公开(公告)日:2006-11-30

    申请号:US11500124

    申请日:2006-08-07

    CPC classification number: H01J1/304 H01J1/3044 H01J31/127 H01J2201/30446

    Abstract: A field emission tip includes a base with a central portion and a tapered portion. The central portion of the base includes a peripheral surface, at least a portion of which is oriented substantially vertically or perpendicularly relative to a plane in which a substrate from which the field emission tip protrudes resides. An apex may be located at an exposed end of the central portion of the base. The tapered portion of the base includes an inclined surface that extends toward the exposed end of the central portion of the base. The tapered portion of the base may be formed from material that is redeposited as the emission tip is fabricated. The apex may be formed, at least in part, from a low work function material, such as one or more of aluminum titanium silicide, titanium silicide nitride, titanium nitride, tri-chromium mono-silicon, and tantalum nitride. Field emission arrays and field emission displays that include such field emission tips are also disclosed.

    Abstract translation: 场发射尖端包括具有中心部分和锥形部分的基部。 基部的中心部分包​​括外周表面,其外周表面的至少一部分相对于其中场致发射尖端突出的基底所在的平面基本垂直或垂直取向。 顶点可以位于基部的中心部分的暴露端。 基部的锥形部分包括朝向基部的中心部分的暴露端延伸的倾斜表面。 基底的锥形部分可以由制造发射尖端时再沉积的材料形成。 顶点可以至少部分地由低功函数材料形成,例如铝硅化钛,硅化钛氮化物,氮化钛,三铬单硅和氮化钽中的一种或多种。 还公开了包括这种场发射尖端的场致发射阵列和场致发射显示器。

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