MEMS DEVICE AND METHOD OF MANUFACTURING
    31.
    发明申请
    MEMS DEVICE AND METHOD OF MANUFACTURING 有权
    MEMS器件及其制造方法

    公开(公告)号:US20150191345A1

    公开(公告)日:2015-07-09

    申请号:US14622619

    申请日:2015-02-13

    Abstract: A MEMS device is provided. The device includes a MEMS wafer, a top cap wafer and a bottom cap wafer. The top and bottom cap wafers are respectively bonded to first and second sides of the MEMS wafer, the MEMS and cap wafers being electrically conductive. The outer side of the top cap wafer is provided with electrical contacts. The MEMS wafer, the top cap wafer and the bottom cap wafer define a cavity for housing a MEMS structure. The device includes insulated conducting pathways extending from within the bottom cap wafer, through the MEMS wafer and through the top cap wafer. The pathways are connected to the respective electrical contacts on the top cap wafer, for routing electrical signals from the bottom cap wafer to the electrical contacts on the top cap wafer. A method of manufacturing the MEMS device is also provided.

    Abstract translation: 提供了一种MEMS器件。 该器件包括MEMS晶片,顶盖晶片和底盖晶片。 顶盖和底盖晶片分别结合到MEMS晶片的第一和第二侧,MEMS和盖晶片是导电的。 顶盖晶片的外侧设有电触点。 MEMS晶片,顶盖晶片和底盖晶片限定用于容纳MEMS结构的空腔。 该器件包括从底盖晶片内部穿过MEMS晶片并穿过顶盖晶片延伸的绝缘导电通路。 通路连接到顶盖晶片上的各个电触点,用于将电信号从底盖晶片转移到顶盖晶片上的电触点。 还提供了一种制造MEMS器件的方法。

    MULTI-MASS MEMS MOTION SENSOR
    32.
    发明公开

    公开(公告)号:US20240230332A1

    公开(公告)日:2024-07-11

    申请号:US18208026

    申请日:2023-06-09

    Abstract: A micro-electro-mechanical system (MEMS) motion sensor is provided that includes a MEMS wafer having a frame structure, a plurality of proof masses suspended to the frame structure, movable in three dimensions, and enclosed in one or more cavities. The MEMS sensor includes top and bottom cap wafers bonded to the MEMS wafer and top and bottom electrodes provided in the top and bottom cap wafers, forming capacitors with the plurality of proof masses, and being together configured to detect motions of the plurality of proof masses. The MEMS sensor further includes first electrical contacts provided on the top cap wafer and electrically connected to the top electrodes, and a second electrical contacts provided on the top cap wafer and electrically connected to the bottom electrodes by way of vertically extending insulated conducting pathways. A method for measuring acceleration and angular rate along three mutually orthogonal axes is also provided.

    3D MEMS device with hermetic cavity

    公开(公告)号:US10407299B2

    公开(公告)日:2019-09-10

    申请号:US15543700

    申请日:2016-01-14

    Abstract: A three dimensional (3D) micro-electro-mechanical system (MEMS) device is provided. The device comprises a central MEMS wafer, and top and bottom cap wafers. The MEMS wafer includes a MEMS structure, such as an inertial sensor. The 5 top cap wafer, the bottom cap wafer and the MEMS wafers are stacked along a stacking axis and together form at least one hermetic cavity enclosing the MEMS structure. At least one of the top cap wafer and the bottom cap wafer is a silicon-on- insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer. At 10 least one electrically conductive path extends through the SOI cap wafer, establishing an electrical convection between an outer electrical contact provided on the SOI cap wafer and the MEMS structure.

    INTEGRATED MEMS SYSTEM
    35.
    发明申请
    INTEGRATED MEMS SYSTEM 审中-公开
    集成MEMS系统

    公开(公告)号:US20160320426A1

    公开(公告)日:2016-11-03

    申请号:US15206935

    申请日:2016-07-11

    Abstract: The present invention provides a 3D System (“3DS”) MEMS architecture that enables the integration of MEMS devices with IC chips to form a System on Chip (SoC) or System in Package (SiP). The integrated MEMS system comprises at least one MEMS chip, including MEMS transducers, and at least one IC chip, including not only MEMS processing circuitry, but also additional/auxiliary circuitry to process auxiliary signals. The MEMS chip can include first and second insulated conducting pathways. The first pathways conduct the MEMS-signals between the transducers and the IC chip, for processing; and the second conducting pathways can extend through the entire thickness of the MEMS chip, to conduct auxiliary signals, such as power, RF, I/Os, to the IC chip, to be processed the additional circuitry.

    Abstract translation: 本发明提供了一种3D系统(“3DS”)MEMS架构,其能够将MEMS器件与IC芯片集成以形成片上系统(SoC)或系统级封装(SiP)。 集成MEMS系统包括至少一个MEMS芯片,包括MEMS换能器,以及至少一个IC芯片,不仅包括MEMS处理电路,还包括用于处理辅助信号的附加/辅助电路。 MEMS芯片可以包括第一和第二绝缘导电路径。 第一路通过传感器和IC芯片之间的MEMS信号进行处理; 并且第二导电路径可以延伸穿过MEMS芯片的整个厚度,以将辅助信号(例如功率,RF,I / O)传送到IC芯片,以便处理附加电路。

    MEMS DEVICE INCLUDING SUPPORT STRUCTURE AND METHOD OF MANUFACTURING
    36.
    发明申请
    MEMS DEVICE INCLUDING SUPPORT STRUCTURE AND METHOD OF MANUFACTURING 审中-公开
    包括支持结构的MEMS器件及其制造方法

    公开(公告)号:US20160229684A1

    公开(公告)日:2016-08-11

    申请号:US15024704

    申请日:2014-09-23

    Abstract: A micro-electro-mechanical system (MEMS) device and a manufacturing method are provided. The device includes top and bottom cap wafers and a MEMS wafer disposed between the top cap wafer and the bottom cap wafer. The top, bottom and MEMS wafers define sidewalls of a cavity. A MEMS structure is housed within the cavity and is movable relative to the top and bottom caps. At least one electrode is provided in one of the wafers, the electrode being operatively coupled to the MEMS structure to detect or induce a movement thereof. A support structure extends through the cavity from the top cap wafer to the bottom cap wafer to prevent bowing in the top cap and bottom cap wafers.

    Abstract translation: 提供了一种微电子机械系统(MEMS)装置和制造方法。 该装置包括顶盖和底盖晶片以及设置在顶盖晶片和底盖晶片之间的MEMS晶片。 顶部,底部和MEMS晶片限定空腔的侧壁。 MEMS结构容纳在腔内并且可相对于顶盖和底盖移动。 在一个晶片中提供至少一个电极,电极可操作地耦合到MEMS结构以检测或引起其移动。 支撑结构通过空腔从顶盖晶片延伸到底盖晶片,以防止在顶盖和底盖晶片中弯曲。

    MEMS motion sensor and method of manufacturing

    公开(公告)号:US11852481B2

    公开(公告)日:2023-12-26

    申请号:US14622548

    申请日:2015-02-13

    CPC classification number: G01C19/5712 G01C19/5755 G01C19/5769

    Abstract: A MEMS motion sensor and its manufacturing method are provided. The sensor includes a MEMS wafer including a proof mass and flexible springs suspending the proof mass and enabling the proof mass to move relative to an outer frame along mutually orthogonal x, y and z axes. The sensor includes top and bottom cap wafers including top and bottom cap electrodes forming capacitors with the proof mass, the electrodes being configured to detect a motion of the proof mass. Electrical contacts are provided on the top cap wafer, some of which are connected to the respective top cap electrodes, while others are connected to the respective bottom cap electrodes by way of insulated conducting pathways, extending along the z axis from one of the respective bottom cap electrodes and upward successively through the bottom cap wafer, the outer frame of the MEMS wafer and the top cap wafer.

    3D MEMS magnetometer and associated methods

    公开(公告)号:US11287486B2

    公开(公告)日:2022-03-29

    申请号:US15534702

    申请日:2015-12-02

    Abstract: A micro-electro-mechanical system (MEMS) magnetometer is provided for measuring magnetic field components along three orthogonal axes. The MEMS magnetometer includes a top cap wafer, a bottom cap wafer and a MEMS wafer having opposed top and bottom sides bonded respectively to the top and bottom cap wafers. The MEMS wafer includes a frame structure and current-carrying first, second and third magnetic field transducers. The top cap, bottom cap and MEMS wafer are electrically conductive and stacked along the third axis. The top cap wafer, bottom cap wafer and frame structure together form one or more cavities enclosing the magnetic field transducers. The MEMS magnetometer further includes first, second and third electrode assemblies, the first and second electrode assemblies being formed in the top and/or bottom cap wafers. Each electrode assembly is configured to sense an output of a respective magnetic field transducer induced by a respective magnetic field component.

    MULTIPLE DEGREE OF FREEDOM MEMS SENSOR CHIP AND METHOD FOR FABRICATING THE SAME

    公开(公告)号:CA3013265A1

    公开(公告)日:2016-09-22

    申请号:CA3013265

    申请日:2016-03-17

    Abstract: A single Micro-Electro-Mechanical System (MEMS) sensor chip is provided, for measuring multiple parameters, referred to as multiple degrees of freedom (DOF). The sensor chip comprises a central MEMS wafer bonded to a top cap wafer and a bottom cap wafer, all three wafer being electrically conductive. The sensor comprises at least two distinct sensors, each patterned in the electrically conductive MEMS wafer and in at least one of the top and bottom cap wafer. Insulated conducting pathways extend from electrical connections on the top or bottom cap wafers, through at least one of the electrically conductive top cap and bottom cap wafers, and through the electrically conductive MEMS wafer, to the sensors, for conducting electrical signals between the sensors and the electrical connections. The two or more distinct sensors are enclosed by the top and bottom cap wafers and by the outer frame of MEMS wafer.

    3D MEMS DEVICE WITH HERMETIC CAVITY

    公开(公告)号:CA3004763A1

    公开(公告)日:2016-07-21

    申请号:CA3004763

    申请日:2016-01-14

    Abstract: A three dimensional (3D) micro-electro-mechanical system (MEMS) device is provided. The device comprises a central MEMS wafer, and top and bottom cap wafers. The MEMS wafer includes a MEMS structure, such as an inertial sensor. The 5 top cap wafer, the bottom cap wafer and the MEMS wafers are stacked along a stacking axis and together form at least one hermetic cavity enclosing the MEMS structure. At least one of the top cap wafer and the bottom cap wafer is a silicon-on- insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer. At 10 least one electrically conductive path extends through the SOI cap wafer, establishing an electrical connection between an outer electrical contact provided on the SOI cap wafer and the MEMS structure.

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