MEMS MOTION SENSOR AND METHOD OF MANUFACTURING

    公开(公告)号:US20230304797A9

    公开(公告)日:2023-09-28

    申请号:US14622548

    申请日:2015-02-13

    CPC classification number: G01C19/5712 G01C25/00

    Abstract: A MEMS motion sensor and its manufacturing method are provided. The sensor includes a MEMS wafer including a proof mass and flexible springs suspending the proof mass and enabling the proof mass to move relative to an outer frame along mutually orthogonal x, y and z axes. The sensor includes top and bottom cap wafers including top and bottom cap electrodes forming capacitors with the proof mass, the electrodes being configured to detect a motion of the proof mass. Electrical contacts are provided on the top cap wafer, some of which are connected to the respective top cap electrodes, while others are connected to the respective bottom cap electrodes by way of insulated conducting pathways, extending along the z axis from one of the respective bottom cap electrodes and upward successively through the bottom cap wafer, the outer frame of the MEMS wafer and the top cap wafer.

    Multi-mass MEMS motion sensor
    2.
    发明授权

    公开(公告)号:US11674803B2

    公开(公告)日:2023-06-13

    申请号:US15315894

    申请日:2015-01-12

    Abstract: A micro-electro-mechanical system (MEMS) motion sensor is provided that includes a MEMS wafer having a frame structure, a plurality of proof masses suspended to the frame structure, movable in three dimensions, and enclosed in one or more cavities. The MEMS sensor includes top and bottom cap wafers bonded to the MEMS wafer and top and bottom electrodes provided in the top and bottom cap wafers, forming capacitors with the plurality of proof masses, and being together configured to detect motions of the plurality of proof masses. The MEMS sensor further includes first electrical contacts provided on the top cap wafer and electrically connected to the top electrodes, and a second electrical contacts provided on the top cap wafer and electrically connected to the bottom electrodes by way of vertically extending insulated conducting pathways. A method for measuring acceleration and angular rate along three mutually orthogonal axes is also provided.

    MEMS PRESSURE SENSOR
    3.
    发明申请
    MEMS PRESSURE SENSOR 审中-公开
    MEMS压力传感器

    公开(公告)号:US20170030788A1

    公开(公告)日:2017-02-02

    申请号:US15302731

    申请日:2015-01-15

    Abstract: The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises a top cap electrode located over the membrane and forming, together with the membrane, a capacitor to detect a deflection of the membrane. Electrical contacts on the top cap wafer are connected to the top cap electrode. A vent is extends from outside of the sensor into the cavity or the capacitance gap. The pressure sensor can include two cavities and two capacitance gaps, to form a differential pressure sensor.

    Abstract translation: 本发明提供一种MEMS压力传感器及其制造方法。 压力由顶盖晶片,MEMS晶片和底盖晶片形成。 MEMS晶片包括框架和膜,框架限定空腔。 膜通过框架悬挂在空腔上。 底盖晶片封闭空腔。 顶盖晶片具有限定了膜的电容间隙的凹部。 顶盖晶片包括位于膜上方的顶盖电极,并与膜一起形成电容器以检测膜的偏转。 顶盖晶片上的电触点连接到顶盖电极。 通气孔从传感器的外部延伸到空腔或电容间隙。 压力传感器可以包括两个空腔和两个电容间隙,以形成差压传感器。

    MULTI-MASS MEMS MOTION SENSOR
    4.
    发明公开

    公开(公告)号:US20240230332A1

    公开(公告)日:2024-07-11

    申请号:US18208026

    申请日:2023-06-09

    Abstract: A micro-electro-mechanical system (MEMS) motion sensor is provided that includes a MEMS wafer having a frame structure, a plurality of proof masses suspended to the frame structure, movable in three dimensions, and enclosed in one or more cavities. The MEMS sensor includes top and bottom cap wafers bonded to the MEMS wafer and top and bottom electrodes provided in the top and bottom cap wafers, forming capacitors with the plurality of proof masses, and being together configured to detect motions of the plurality of proof masses. The MEMS sensor further includes first electrical contacts provided on the top cap wafer and electrically connected to the top electrodes, and a second electrical contacts provided on the top cap wafer and electrically connected to the bottom electrodes by way of vertically extending insulated conducting pathways. A method for measuring acceleration and angular rate along three mutually orthogonal axes is also provided.

    INTEGRATED MEMS SYSTEM
    6.
    发明申请
    INTEGRATED MEMS SYSTEM 审中-公开
    集成MEMS系统

    公开(公告)号:US20160320426A1

    公开(公告)日:2016-11-03

    申请号:US15206935

    申请日:2016-07-11

    Abstract: The present invention provides a 3D System (“3DS”) MEMS architecture that enables the integration of MEMS devices with IC chips to form a System on Chip (SoC) or System in Package (SiP). The integrated MEMS system comprises at least one MEMS chip, including MEMS transducers, and at least one IC chip, including not only MEMS processing circuitry, but also additional/auxiliary circuitry to process auxiliary signals. The MEMS chip can include first and second insulated conducting pathways. The first pathways conduct the MEMS-signals between the transducers and the IC chip, for processing; and the second conducting pathways can extend through the entire thickness of the MEMS chip, to conduct auxiliary signals, such as power, RF, I/Os, to the IC chip, to be processed the additional circuitry.

    Abstract translation: 本发明提供了一种3D系统(“3DS”)MEMS架构,其能够将MEMS器件与IC芯片集成以形成片上系统(SoC)或系统级封装(SiP)。 集成MEMS系统包括至少一个MEMS芯片,包括MEMS换能器,以及至少一个IC芯片,不仅包括MEMS处理电路,还包括用于处理辅助信号的附加/辅助电路。 MEMS芯片可以包括第一和第二绝缘导电路径。 第一路通过传感器和IC芯片之间的MEMS信号进行处理; 并且第二导电路径可以延伸穿过MEMS芯片的整个厚度,以将辅助信号(例如功率,RF,I / O)传送到IC芯片,以便处理附加电路。

    MEMS motion sensor and method of manufacturing

    公开(公告)号:US11852481B2

    公开(公告)日:2023-12-26

    申请号:US14622548

    申请日:2015-02-13

    CPC classification number: G01C19/5712 G01C19/5755 G01C19/5769

    Abstract: A MEMS motion sensor and its manufacturing method are provided. The sensor includes a MEMS wafer including a proof mass and flexible springs suspending the proof mass and enabling the proof mass to move relative to an outer frame along mutually orthogonal x, y and z axes. The sensor includes top and bottom cap wafers including top and bottom cap electrodes forming capacitors with the proof mass, the electrodes being configured to detect a motion of the proof mass. Electrical contacts are provided on the top cap wafer, some of which are connected to the respective top cap electrodes, while others are connected to the respective bottom cap electrodes by way of insulated conducting pathways, extending along the z axis from one of the respective bottom cap electrodes and upward successively through the bottom cap wafer, the outer frame of the MEMS wafer and the top cap wafer.

    MEMS PRESSURE SENSOR
    8.
    发明申请

    公开(公告)号:US20200232860A1

    公开(公告)日:2020-07-23

    申请号:US16694607

    申请日:2019-11-25

    Abstract: The present invention provides a MEMS pressure sensor and a manufacturing method. The pressure is formed by a top cap wafer, a MEMS wafer and a bottom cap wafer. The MEMS wafer comprises a frame and a membrane, the frame defining a cavity. The membrane is suspended by the frame over the cavity. The bottom cap wafer closes the cavity. The top cap wafer has a recess defining with the membrane a capacitance gap. The top cap wafer comprises a top cap electrode located over the membrane and forming, together with the membrane, a capacitor to detect a deflection of the membrane. Electrical contacts on the top cap wafer are connected to the top cap electrode. A vent extends from outside of the sensor into the cavity or the capacitance gap. The pressure sensor can include two cavities and two capacitance gaps to form a differential pressure sensor.

    Integrated MEMS system
    9.
    发明授权

    公开(公告)号:US10214414B2

    公开(公告)日:2019-02-26

    申请号:US15206935

    申请日:2016-07-11

    Abstract: An integrated MEMS system having a MEMS chip, including a MEMS transducer, and at least one IC chip, including MEMS processing circuitry, and additional circuitry to process electrical signals. The MEMS chip can include first and second insulated conducting pathways. The first pathways conduct the MEMS-signals between the transducer and the IC chip, for processing; and the second conducting pathways can extend through the entire thickness of the MEMS chip, to conduct electrical signals to the IC chip, to be processed by additional circuitry.

    3D MEMS device and method of manufacturing
    10.
    发明授权
    3D MEMS device and method of manufacturing 有权
    3D MEMS器件及其制造方法

    公开(公告)号:US09309106B2

    公开(公告)日:2016-04-12

    申请号:US14622619

    申请日:2015-02-13

    Abstract: A MEMS device is provided. The device includes a MEMS wafer, a top cap wafer and a bottom cap wafer. The top and bottom cap wafers are respectively bonded to first and second sides of the MEMS wafer, the MEMS and cap wafers being electrically conductive. The outer side of the top cap wafer is provided with electrical contacts. The MEMS wafer, the top cap wafer and the bottom cap wafer define a cavity for housing a MEMS structure. The device includes insulated conducting pathways extending from within the bottom cap wafer, through the MEMS wafer and through the top cap wafer. The pathways are connected to the respective electrical contacts on the top cap wafer, for routing electrical signals from the bottom cap wafer to the electrical contacts on the top cap wafer. A method of manufacturing the MEMS device is also provided.

    Abstract translation: 提供了一种MEMS器件。 该器件包括MEMS晶片,顶盖晶片和底盖晶片。 顶盖和底盖晶片分别结合到MEMS晶片的第一和第二侧,MEMS和盖晶片是导电的。 顶盖晶片的外侧设有电触点。 MEMS晶片,顶盖晶片和底盖晶片限定用于容纳MEMS结构的空腔。 该器件包括从底盖晶片内部穿过MEMS晶片并穿过顶盖晶片延伸的绝缘导电通路。 通路连接到顶盖晶片上的相应的电触点,用于将电信号从底盖晶片转移到顶盖晶片上的电触点。 还提供了一种制造MEMS器件的方法。

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