公开(公告)号：KR100949283B1

公开(公告)日：2010-03-25

申请号：KR1020030023562

申请日：2003-04-15

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오리이타케히코 ,  무코야마마사히로 ,  난바히로미츠

IPC: H01L21/304

CPC classification number: H01L21/67051

Abstract: 세정처리장치는 웨이퍼(W)를 보지하는 스핀척과, 웨이퍼(W)의 이면에 대하여 소정 간격으로 대향하는 언더플레이트와, 언더플레이트를 지지하는 지지부재와, 언더플레이트 및 지지부재를 관통하는 노즐구멍을 갖는다. 노즐구멍에는 개폐밸브를 통하여 각각 약액, 순수, 가스를 공급할 수 있고, 노즐구멍의 내부에 잔류하는 약액이나 순수를 홉인장치에 의해 흡인한다. 웨이퍼(W)의 순수처리 후에 노즐구멍 내부에 잔류하는 순수를 흡인장치에 의해 흡인제거하고, 이어서 가스를 웨이퍼(W)의 이면에 분사한다.

公开(公告)号：KR1020030041091A

公开(公告)日：2003-05-23

申请号：KR1020020071057

申请日：2002-11-15

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 니우야타카유키 ,  오리이타케히코 ,  모리히로유키 ,  야노히로시 ,  나카모리미츠노리

IPC: H01L21/304

CPC classification number: H01L21/31133 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/76814

Abstract: PURPOSE: To provide a substrate processing method and its apparatus for removing resist and polymer layers without damaging the base film. CONSTITUTION: The substrate processing apparatus 1 for removing a resist film of a wafer W, a polymer layer, and metal attached at sputtering, includes a rotor 5 for holding the wafer W in a rotatable state, chambers 7 and 8 for storing the rotor 5 for holding the wafer W, a first process liquid feeding mechanism 25 for feeding a chamber 7 with a first process liquid for changing the film quality of the resist film and the polymer layer and oxidizing the attached metal, a second process liquid feed mechanism 35 for feeding a chamber 8 with a second process liquid for solving and lifting off the resist film, the polymer layer, and the oxidized metal, and a N2 gas feed source 55 for feeding an inert gas to the inside of the chamber 8 and changing the inside of the chamber 8 into a non-oxidized atmosphere.

Abstract translation: 目的：提供一种基板处理方法及其除去抗蚀剂和聚合物层而不损坏基膜的装置。 构成：用于去除晶片W，聚合物层和溅射时附着的金属的抗蚀剂膜的基板处理装置1包括用于将晶片W保持在可旋转状态的转子5，用于存储转子5的室7和8 用于保持晶片W的第一处理液体供给机构25，用于向室7供给用于改变抗蚀剂膜和聚合物层的膜质量并氧化附着金属的第一处理液;第二处理液体供给机构35，用于 用第二处理液供给室8，用于解决和剥离抗蚀剂膜，聚合物层和氧化金属，以及用于将惰性气体供给到室8的内部并改变内部的N 2气体供给源55 的室8进入非氧化气氛。

公开(公告)号：KR1020030013316A

公开(公告)日：2003-02-14

申请号：KR1020020045729

申请日：2002-08-02

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 오리이타케히코 ,  니시다타츠야 ,  쿠로다오사무

IPC: H01L21/00

CPC classification number: H01L21/6708 ,  B08B3/02

Abstract: PURPOSE: To provide a substrate processing apparatus and method which can perform its stable processing and can increase the resist processing throughput even when the apparatus is rotated at a low speed. CONSTITUTION: In the substrate processing apparatus for processing a substrate W by relatively moving a plurality of supply means 61, 62 and 63 for supplying different processing fluids along the periphery of the substrate W; the plurality of supply means 61, 62 and 63 are positioned as arranged in a row directed from the periphery of the substrate W inwardly thereof.

Abstract translation: 目的：提供一种能够进行稳定处理的基板处理装置和方法，即使在低速旋转装置时也能够提高抗蚀剂处理量。 构成：在用于通过相对移动多个供给装置61,62和63来处理衬底W的衬底处理装置中，用于沿衬底W的周边供应不同的处理流体; 多个供给装置61,62和63被布置成从其内部的衬底W的周边排列成一行。