公开(公告)号：KR1020080083241A

公开(公告)日：2008-09-17

申请号：KR1020080073220

申请日：2008-07-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 구와다도모나오 ,  요네다마사타케 ,  니시모리다카시

IPC: H01L21/20

CPC classification number: C23C16/45565 ,  C23C16/4405 ,  C23C16/4557 ,  C23C16/45572

Abstract: A cleaning method of a process chamber is provided to suppress the generation of particles by removing the generation of friction due to thermal expansion. A shower head structure is loaded into a process chamber(22) of a layer forming apparatus(20) to perform a layer forming process for depositing reactants on a surface of a heated target in process gas atmosphere. The shower head structure is used for introducing a process gas into the process chamber. When the cleaning gas is introduced from the shower head structure to the process chamber, the temperature of the shower head structure is set at the temperature higher than the temperature of a layer forming process. The temperature of the shower head structure is 130 degrees centigrade or more.

Abstract translation: 提供处理室的清洁方法，以通过消除由于热膨胀产生的摩擦来抑制颗粒的产生。 淋浴头结构被装载到层形成装置（20）的处理室（22）中以进行用于在处理气体气氛中在加热的靶的表面上沉积反应物的层形成过程。 淋浴头结构用于将处理气体引入处理室。 当清洗气体从喷淋头结构引入处理室时，喷淋头结构的温度设定在高于层形成工艺的温度的温度。 淋浴头结构的温度为130摄氏度或更高。

公开(公告)号：KR100833386B1

公开(公告)日：2008-05-28

申请号：KR1020067005788

申请日：2004-09-24

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 시미즈마사히로 ,  가사이시게루 ,  요네다마사타케

IPC: H01L21/324 ,  H01L21/26

CPC classification number: H01L21/67115 ,  H01L21/324 ,  H01L21/67109

Abstract: 실리콘 웨이퍼 등의 피처리체에 400℃이상의 온도에서 어닐 처리 등의 열처리를 실시하기 위한 열처리 장치이다. 이 장치는, 천정부에 투과창(8)을 갖는 처리 용기(4)를 구비하고 있다. 이 용기 내는, 투과창과 대향하도록 피처리체(W)를 탑재하는 탑재대(10)가 설치된다. 처리 용기의 윗쪽은, 투과창을 통해서 피처리체에 열선을 조사함으로써 피처리체를 가열하는 복수의 가열 램프(42A, 42B)가 설치된다. 탑재대에는, 피처리체를 적어도 냉각 가능한 열전 변환기(24)가 설치된다. 피처리체의 승온 시에는 주로 가열 램프로부터의 열선에 의해 가열하고, 온도 하강시에는 열전 변환기를 이용하여 강제적으로 냉각한다.

公开(公告)号：KR1020020020648A

公开(公告)日：2002-03-15

申请号：KR1020010055142

申请日：2001-09-07

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 구와다도모나오 ,  요네다마사타케 ,  니시모리다카시

IPC: H01L21/20

CPC classification number: C23C16/45565 ,  C23C16/4405 ,  C23C16/4557 ,  C23C16/45572

Abstract: PURPOSE: A shower head structure, a device and a method for film formation, and a method for cleaning are provided to improve and highly maintain the reproducibility of a film forming process and that can easily remove, in a short time, reaction by-products stuck in the process of film formation. CONSTITUTION: A shower head structure(80) is installed in the ceiling part of a processing container for applying the film formation to a workpiece W and that is intended to supply a prescribed gas. The shower head is equipped with the head body part(82) which is shaped in a bottom-attached cylinder having a bottom with a plurality of gas injection holes(94) opened, and which is integrally formed with a connecting flange for the ceiling installation on the opening side of the cup configuration; it is also equipped with the head heating part(100) which is provided on the bottom of the head body part and which is designed to adjust the gas injector of the head body part at a desired temperature. The shower head structure executes a film-forming process, in which the reproducibility is enhanced under at a low temperature, as well as a process of removing reaction by-products at high temperatures.

Abstract translation: 目的：提供一种喷头结构，一种成膜装置和方法以及一种清洗方法，以改善和高度保持成膜过程的再现性，并且可以在短时间内容易地除去反应副产物 卡在成膜过程中。 构成：喷淋头结构（80）安装在用于将成膜施加到工件W的处理容器的顶部，并且旨在供应规定的气体。 淋浴头配备有头部本体部分（82），头部主体部分（82）成形为具有底部的底部连接的多个气体喷射孔（94）打开的底部，并且与顶部安装的连接凸缘一体形成 在杯子配置的开口侧; 它还配备有设置在头主体部分的底部上的头部加热部分（100），其被设计成将头部主体部分的气体注射器调节到期望的温度。 淋浴头结构执行其中在低温下再现性增强的成膜方法以及在高温下除去反应副产物的方法。