公开(公告)号：KR100565128B1

公开(公告)日：2006-03-30

申请号：KR1020030048603

申请日：2003-07-16

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 마츠모토나오키 ,  고시미즈치시오 ,  혼고도시아키

IPC: H05H1/46

CPC classification number: H01J37/321

Abstract: 본 발명은 처리 챔버 내로 고주파 전력을 공급하여 플라즈마를 발생시키고, 그 플라즈마로 피처리 물체를 처리하는 플라즈마 처리 장치를 제공한다. 플라즈마 처리 장치에서, 처리 챔버는 플라즈마를 발생시키는 영역의 매체를 매개로 피처리 물체에 대향하게 배치된 상판을 구비하고, 고주파 안테나가 상판의 둘레를 감도록 처리 챔버의 내측 및 외측에 배치되어 있다.

Abstract translation: 本发明提供一种等离子体处理装置，其通过向处理室内供给高频电力并利用等离子体处理被处理体而生成等离子体。 在等离子体处理装置中，处理腔室是一个区域的，用于生成包括相对设置的目标对象的顶板的等离子体的参数，高频天线被布置在所述处理室的内侧和外侧，以便减少在顶板的圆周上的介质 。

公开(公告)号：KR100401376B1

公开(公告)日：2003-10-17

申请号：KR1020007009112

申请日：1999-12-10

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키

IPC: C25D5/20

CPC classification number: C25D7/12 ,  C25D5/20 ,  C25D17/001 ,  H01L21/2885

Abstract: This plating apparatus 4 includes a plating bath 15 filled up with a plating solution, a first O ring 17 arranged on a top part of the plating bath 15, for electrical connection with an underlying electrode 18 formed on a wafer 2, a second O ring 20 arranged on the top part of the plating bath 15 so as to prevent the plating solution in the plating bath 15 from contact with the first O ring 17, an anode plate 24 disposed in the plating bath 15 and an ultrasonic oscillating element 26 arranged in the plating bath 15. The plating apparatus 4 is capable of forming a plating film having an uniform thickness on the semiconductor wafer.

Abstract translation: 该电镀设备4包括填充有电镀液的电镀槽15，布置在电镀槽15的顶部上的第一O形环17，用于与形成在晶片2上的下层电极18电连接，第二O形环 20，其设置在电镀槽15的顶部以防止电镀槽15中的电镀液与第一O形环17接触;设置在电镀槽15中的阳极板24;以及设置在电镀槽15中的超声波振荡元件26 电镀浴15.电镀装置4能够在半导体晶片上形成厚度均匀的电镀膜。 ＆lt;图像＆GT;

公开(公告)号：KR1020010093073A

公开(公告)日：2001-10-27

申请号：KR1020010014799

申请日：2001-03-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/20

CPC classification number: C23C16/4408 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/4558 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32834 ,  H01J2237/022 ,  H01L21/3145 ,  H01L21/3185

Abstract: PURPOSE: To provide a plasma processing apparatus and method which can process an object to be processed with high quality by removing impurities. CONSTITUTION: The plasma processing apparatus includes a processing chamber for performing prescribed plasma processing operations to an object to be processed, a gas supply mechanism for supplying a gas for processing of the object, a first vacuum pump connected to the processing chamber and having a vacuum state kept therein, and a second vacuum pump connected to the gas supply mechanism for evacuating the gas supply mechanism.

Abstract translation: 目的：提供一种能够通过去除杂质以高质量处理待处理物体的等离子体处理装置和方法。 构成：等离子体处理装置包括：处理室，用于对待处理物体进行规定的等离子体处理操作;供气机构，用于供应用于处理物体的气体;第一真空泵，连接到处理室并具有真空 状态保持在其中，第二真空泵连接到气体供给机构，用于抽气气体供给机构。

公开(公告)号：KR1020010093072A

公开(公告)日：2001-10-27

申请号：KR1020010014798

申请日：2001-03-22

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 혼고도시아키 ,  오사와테츠

IPC: H01L21/20

CPC classification number: H01J37/32192 ,  C23C16/511

Abstract: PURPOSE: To provide a plasma processing system performing high quality plasma processing by preventing mixing of impurities, while ensuring a prescribed plasma processing rate of an article to be processed, a member for introducing plasma and a dielectric. CONSTITUTION: A dielectric plate, having dielectric constant εt and a thickness H, can be disposed between a chamber for plasma processing an article to be processed and a slot electrode for guiding a microwave required for plasma processing. The thickness H satisfies the relation 0.5 λ

Abstract translation: 目的：提供一种等离子体处理系统，通过防止杂质混合，同时确保待处理物品的规定等离子体处理速度，等离子体引入部件和电介质等，进行高质量的等离子体处理。 构成：具有介电常数εt和厚度H的电介质板可以设置在用于等离子体处理待处理物品的室和用于引导等离子体处理所需的微波的槽电极之间。 厚度H满足0.5λ