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公开(公告)号：KR101504155B1
公开(公告)日：2015-03-19
申请号：KR1020080118544
申请日：2008-11-27
Applicant: 삼성전자주식회사
IPC: H01L33/06
Abstract: 본 발명은 질화물 반도체 발광소자에 관한 것으로, 보다 상세하게는 적색광, 녹색광, 및 청색광을 발산할 수 있는 3 가지 서로 상이한 밴드갭을 갖는 층을 포함하는 활성층을 통하여 백색광을 발산하여, 공정을 단순화하고 제작비용을 감소할 수 있는 질화물 반도체 발광소자에 관한 것이다.
본 발명에 따른 질화물 반도체 발광소자는: 기판; 상기 기판 상에 형성되어 있는 n형 클래드층; 상기 n형 클래드 상에 형성되어 있는 서로 다른 조성을 갖는 제1 질화물 반도체층과 제2 질화물 반도체층이 적어도 2회 반복하여 형성된 전자방출층; 상기 전자 방출층 상에 형성되고 2개 이상의 다층 양자우물 구조로 형성되어있는 활성층; 상기 활성층 상에 형성되어 있는 p형 클래드층; 상기 p형 클래드층 상에 형성되어 있는 p형 전극; 및 상기 n형 클래드층 상에 형성되어 있는 n형 전극;을 포함한다.
백색광 발광소자, 질화물 반도체 발광소자, 에너지 밴드갭-
公开(公告)号：KR1020150019828A
公开(公告)日：2015-02-25
申请号：KR1020130097196
申请日：2013-08-16
Applicant: 삼성전자주식회사
CPC classification number: H01L25/0756 , H01L2224/32145 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2225/06562 , H01L2924/00014 , H01L2924/00
Abstract: 본 실시 형태에 따른 발광소자 패키지는, 리드 프레임이 구비된 본체; 및 상기 본체 상에 실장되며, 상기 리드 프레임과 전기적으로 연결되어 광을 발광하는 발광 적층체;를 포함하고, 상기 발광 적층체는 복수의 발광소자가 상호 적층되어 이루어지는 복수의 층 구조를 가지며, 상기 복수의 발광소자 중 상층의 발광소자는 하층의 발광소자와 꼭짓점 부분이 중첩되지 않고 어긋나도록 적층되어 상기 하층의 발광소자는 부분적으로 외부 노출되는 것을 특징으로 한다.
Abstract translation: 本发明涉及一种发光器件封装及其制造方法。 根据实施例，发光封装包括：主体，其包括引线框架; 以及安装在主体上并与引线框电连接的发光层叠体。 发光层叠体具有多个层叠结构体，多个发光元件彼此层叠，发光元件中的上部发光元件被层叠成具有发光元件的下层的顶点 从上部发光装置的顶点位置脱位，使得发光装置的下层部分地暴露于外部。
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公开(公告)号：KR1020120116764A
公开(公告)日：2012-10-23
申请号：KR1020110034401
申请日：2011-04-13
Applicant: 삼성전자주식회사
IPC: H01L33/04
Abstract: PURPOSE: A nitride semiconductor light emitting device is provided to improve light efficiency of a light emitting device by reducing stress from a semiconductor layer. CONSTITUTION: Provided is an N-type and p-type nitride semiconductor layers. An active layer(15) is formed between the n-type and p-type nitride semiconductor layers. An electron injection layer(14) is formed between the n-type nitride semiconductor layer and the active layer. The electron injection layer includes a multi-layered structure in which three or more layers having different energy band gap are laminated The multi-layered structure is repeated over 2 times and one layer among the layers constituting the multi-layered structure has smaller energy band gap as being closer to the active layer. [Reference numerals] (12) N-type semiconductor; (14) Electron injection layer; (15) Active layer; (AA) Band gap
Abstract translation: 目的：提供氮化物半导体发光器件，以通过减少半导体层的应力来提高发光器件的光效率。 构成：提供了N型和p型氮化物半导体层。 在n型和p型氮化物半导体层之间形成有源层（15）。 在n型氮化物半导体层和有源层之间形成电子注入层（14）。 电子注入层包括其中层叠有不同能带的三层以上的多层结构多层结构重复2次以上，构成多层结构的层中的1层具有较小的能带隙 作为更接近有源层。 （12）N型半导体; （14）电子注入层; （15）活性层; （AA）带隙
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公开(公告)号：KR1020120079632A
公开(公告)日：2012-07-13
申请号：KR1020110000916
申请日：2011-01-05
Applicant: 삼성전자주식회사
CPC classification number: H01L33/0075 , H01L33/007 , H01L33/32 , H01L33/02 , H01L2933/0008
Abstract: PURPOSE: A manufacturing method of a light emitting diode and the light emitting diode manufactured by the same are provided to minimize contamination on a semiconductor layer by growing the semiconductor layer by using two ore more reaction chambers. CONSTITUTION: A first conductivity type nitride semiconductor layer(102) and an undoped nitride semiconductor layer(103) are grown on a substrate. The substrate is transferred to a second reaction chamber. An additional first conductivity type nitride semiconductor layer(104) is grown on the undoped nitride semiconductor layer. An active layer(105) is grown on the additional first conductivity type nitride semiconductor layer. A second conductive type nitride semiconductor layer(106) is grown on the active layer.
Abstract translation: 目的：提供一种发光二极管的制造方法和由其制造的发光二极管，以通过使用两个以上的反应室来生长半导体层来最小化对半导体层的污染。 构成：在基板上生长第一导电型氮化物半导体层（102）和未掺杂的氮化物半导体层（103）。 将基底转移到第二反应室。 在未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层（104）。 在附加的第一导电型氮化物半导体层上生长有源层（105）。 在有源层上生长第二导电型氮化物半导体层（106）。
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公开(公告)号：KR1020110092525A
公开(公告)日：2011-08-18
申请号：KR1020100011994
申请日：2010-02-09
Applicant: 삼성전자주식회사
IPC: H01L33/20
CPC classification number: H01L33/22 , H01L33/0075 , H01L2933/0083
Abstract: PURPOSE: A method for manufacturing a semiconductor light emitting device is provided to minimize damage to a light emitting structure by regrowing a second conductive semiconductor layer for a short time. CONSTITUTION: A first conductive semiconductor layer(101) is formed on a substrate(100). An active layer(102) is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(103) is formed on the active layer. A mask(104) with a plurality of open areas is formed on the second conductive semiconductor layer. The plurality of open areas is regularly arranged.
Abstract translation: 目的：提供一种用于制造半导体发光器件的方法，以通过在短时间内重新生长第二导电半导体层来最小化对发光结构的损伤。 构成：在基板（100）上形成第一导电半导体层（101）。 在第一导电半导体层上形成有源层（102）。 在有源层上形成第二导电半导体层（103）。 具有多个开放区域的掩模（104）形成在第二导电半导体层上。 多个开放区域被规则排列。
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Patent Agency Ranking
公开(公告)号：KR1020110090118A
公开(公告)日：2011-08-10
申请号：KR1020100009711
申请日：2010-02-02
Applicant: 삼성전자주식회사
CPC classification number: H01L33/145 , H01L33/025 , H01L33/04 , H01L33/30 , H01L33/32 , H01L33/36
Abstract: PURPOSE: A semiconductor light emitting device is provided to prevent an overflow phenomenon of electronics and to improve injection efficiency of a hole, thereby improving luminous efficiency at the high current density. CONSTITUTION: An active layer(140) is formed by being laminated one or more quantum barrier layers and one or more quantum-well layers by turns on an n-type semiconductor layer(130). An electron blocking layer is formed on the active layer. The electron blocking layer has one multi-layer in which 3 layers are laminated. The 3 layers has different band gap. The layer which is contiguous to the active layer among the 3 layer has an inclined energy band structure.
Abstract translation: 目的：提供一种半导体发光器件，以防止电子元件的溢出现象并提高孔的注入效率，从而提高高电流密度下的发光效率。 构成：通过在n型半导体层（130）上通过层叠一个或多个量子势垒层和一个或多个量子阱层来形成有源层（140）。 在有源层上形成电子阻挡层。 电子阻挡层具有层叠3层的一层多层。 3层具有不同的带隙。 与3层中的有源层相邻的层具有倾斜的能带结构。
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公开(公告)号：KR1020110057541A
公开(公告)日：2011-06-01
申请号：KR1020090113986
申请日：2009-11-24
Applicant: 삼성전자주식회사
IPC: H01L33/06
Abstract: PURPOSE: A nitride semiconductor light emitting device is provided to improve external quantum efficiency by controlling the thickness of a quantum well according to a low current density and a high current density. CONSTITUTION: An active layer(130) is formed on a first conductive nitride semiconductor layer. An active layer has a structure where a plurality of quantum well layers and quantum barrier layers are alternatively arranged. A second conductive nitride semiconductor layer is formed on the active layer. The plurality of quantum well layers include a first quantum layer(131a) and a second quantum layer(131b) with different thicknesses. The first and second quantum well layers emit light with the same wavelength.
Abstract translation: 目的：提供氮化物半导体发光器件，以通过根据低电流密度和高电流密度控制量子阱的厚度来提高外部量子效率。 构成：在第一导电氮化物半导体层上形成有源层（130）。 有源层具有交替布置多个量子阱层和量子势垒层的结构。 在有源层上形成第二导电氮化物半导体层。 多个量子阱层包括具有不同厚度的第一量子层（131a）和第二量子层（131b）。 第一和第二量子阱层发射具有相同波长的光。
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公开(公告)号：KR1020110041683A
公开(公告)日：2011-04-22
申请号：KR1020090098623
申请日：2009-10-16
Applicant: 삼성전자주식회사
IPC: H01L33/20
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve the light emission efficiency by reducing the crystal defect in the semiconductor layer. CONSTITUTION: A n-type semiconductor layer(101) has the pit formed on the upper side. An intermediate layer comprises the domain doped on the n-type semiconductor layer to the p-type impurity. An active layer(103) is formed on the intermediate layer. A p-type semiconductor layer(105) is formed on the active layer. The intermediate layer is divided into the low resistance region and the high resistance region formed on the n-type semiconductor layer upper side except for the pit.
Abstract translation: 目的：提供半导体发光器件及其制造方法，以通过减少半导体层中的晶体缺陷来提高发光效率。 构成：n型半导体层（101）在上侧形成有凹坑。 中间层包括在n型半导体层上掺杂到p型杂质的畴。 在中间层上形成有源层（103）。 在有源层上形成p型半导体层（105）。 中间层被分成低电阻区域和形成在除了凹坑之外的n型半导体层上侧的高电阻区域。
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公开(公告)号：KR1020100060098A
公开(公告)日：2010-06-07
申请号：KR1020080118544
申请日：2008-11-27
Applicant: 삼성전자주식회사
IPC: H01L33/06
Abstract: PURPOSE: A nitride semiconductor light emitting device is provided to simplify a process by radiating a white light through an active layer including layer having band gap of three different colors. CONSTITUTION: An n-type clad layer(120) is formed on a substrate. An electronic emitting layer is formed by laminating a first nitride semiconductor layer and a second nitride semiconductor layer which are formed on the n-type clad layer at least twice. An active layer is formed on the electronic emitting layer in two multiple quantum well structures. A p-type cladding layer is formed on the active layer. A P-contact is formed on the p-type cladding layer. N type electrode(160) is formed on the n-type clad layer.
Abstract translation: 目的：提供一种氮化物半导体发光器件，用于通过包括具有三种不同颜色的带隙的层的有源层照射白光来简化工艺。 构成：在衬底上形成n型覆盖层（120）。 通过将形成在n型覆层上的第一氮化物半导体层和第二氮化物半导体层层叠至少两次来形成电子发射层。 在两个多重量子阱结构中的电子发射层上形成有源层。 在有源层上形成p型覆层。 P型接触形成在p型覆层上。 N型电极（160）形成在n型覆盖层上。
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公开(公告)号：KR1020100044403A
公开(公告)日：2010-04-30
申请号：KR1020080103525
申请日：2008-10-22
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A nitride semiconductor light emitting device and a method of manufacturing the same are provided to maximize light extraction efficiency of light emitted from inside a device by forming a pattern on the side of a substrate. CONSTITUTION: A substrate comprises a pattern on the side. An n-type nitride semiconductor layer(120) is formed on the substrate(100). An active layer(130) is formed on a part of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(140) is formed on the active layer. A P-contact(150) is formed on the p-type nitride semiconductor layer. The N type electrode(160) is formed on the n-type nitride semiconductor layer.
Abstract translation: 目的：提供氮化物半导体发光器件及其制造方法，以通过在衬底侧形成图案来最大化从器件内部发射的光的光提取效率。 构成：衬底包括侧面的图案。 在衬底（100）上形成n型氮化物半导体层（120）。 在n型氮化物半导体层的一部分上形成有源层（130）。 在有源层上形成p型氮化物半导体层（140）。 在p型氮化物半导体层上形成有P触点（150）。 N型电极（160）形成在n型氮化物半导体层上。
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