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公开(公告)号：KR102212561B1
公开(公告)日：2021-02-08
申请号：KR1020140103943
申请日：2014-08-11
Applicant: 삼성전자주식회사
Abstract: 본발명은, n형반도체층; 상기 n형반도체층상에배치되고, 일방향으로밴드갭에너지가감소하며, AlxInyGa1-x-yN (0.01≤x≤0.1, 0≤y≤0.1)의조성식을갖는보더층; 상기보더층상에배치되며, 적어도하나이상의 InGaN층과 GaN층이교대로적층된활성층; 및 p형반도체층;을포함하는것을특징으로하는반도체발광소자를제공한다.
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公开(公告)号：KR102244220B1
公开(公告)日：2021-04-27
申请号：KR1020140138881
申请日：2014-10-15
Applicant: 삼성전자주식회사
Abstract: 본발명은, 제1 도전형반도체층; 상기제1 도전형반도체층상에배치되고, 복수의양자장벽층및 복수의양자우물층이교대로적층된활성층; 및상기활성층상에배치되는제2 도전형반도체층을포함하며, 상기복수의양자장벽층중 상기제2 도전형반도체층에가장인접한양자장벽층은제1 언도프영역(undoped region) 및상기제1 언도프영역상에배치되고상기제1 언도프영역의두께보다크거나같은두께를갖는제1 도프영역(doped region)을포함하고, 상기제1 언도프영역및 제1 도프영역각각은서로다른에너지밴드갭을갖는복수의제1 단위층들(unit layers)이교대로배치되어이루어진적어도하나의정공수용영역(hole accumulation region)을포함하는것을특징으로하는반도체발광소자를제공한다.
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公开(公告)号：KR1020160019622A
公开(公告)日：2016-02-22
申请号：KR1020140103943
申请日：2014-08-11
Applicant: 삼성전자주식회사
CPC classification number: H01L33/325 , B82Y20/00 , H01L33/0025 , H01L33/025 , H01L33/06 , H01L33/14 , H01L33/24 , H01L33/46 , H01L33/502 , Y10S977/95
Abstract: 본발명은, n형반도체층; 상기 n형반도체층상에배치되고, 일방향으로밴드갭에너지가감소하며, AlInGaN (0.01≤x≤0.1, 0≤y≤0.1)의조성식을갖는보더층; 상기보더층상에배치되며, 적어도하나이상의 InGaN층과 GaN층이교대로적층된활성층; 및 p형반도체층;을포함하는것을특징으로하는반도체발광소자를제공한다.
Abstract translation: 提供一种半导体发光器件，包括：n型半导体层; 边界层设置在n型半导体层上，带隙能量在单一方向上减小，并由经验公式Al_xIn_yGa_（1-xy）N（0.01 <= x <= 0.1,0 <= y < 0.1）; 有源层设置在边界层上并具有其中一个或多个InGaN层和一个或多个GaN层交替堆叠的结构; 和p型半导体层。
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公开(公告)号：KR1020140075253A
公开(公告)日：2014-06-19
申请号：KR1020120143437
申请日：2012-12-11
Applicant: 삼성전자주식회사
CPC classification number: H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/22
Abstract: A method of forming a semiconductor layer according to the embodiment of the present invention includes a step of forming nanorods on a substrate; a step of forming a lower semiconductor layer in a range of exposing at least parts of the nanorods on the substrate; a step of removing the nanorods to form voids in the lower semiconductor layer; and a step of forming an upper semiconductor layer in the upper part of the voids and the lower semiconductor layer.
Abstract translation: 根据本发明的实施方案的形成半导体层的方法包括在衬底上形成纳米棒的步骤; 在使所述基板上的所述纳米棒的至少一部分曝光的范围内形成下半导体层的工序; 去除纳米棒以在下半导体层中形成空隙的步骤; 以及在空隙和下半导体层的上部形成上半导体层的步骤。
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公开(公告)号：KR1020130012375A
公开(公告)日：2013-02-04
申请号：KR1020110073529
申请日：2011-07-25
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to reduce the influence of polarization by controlling the content of In and the shape of a bandgap of a quantum barrier layer. CONSTITUTION: An active layer(103) is arranged between a first conductive semiconductor layer and a second conductive semiconductor layer. A quantum barrier layer(103b) and a quantum well layer(103a) are alternatively arranged on the active layer. The quantum barrier layer includes a first region and a second region. The first region is contacted with the second region.
Abstract translation: 目的：提供一种半导体发光器件及其制造方法，通过控制In的含量和量子势垒层的带隙的形状来减少极化的影响。 构成：在第一导电半导体层和第二导电半导体层之间布置有源层（103）。 量子势垒层（103b）和量子阱层（103a）交替布置在有源层上。 量子势垒层包括第一区域和第二区域。 第一区域与第二区域接触。
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Patent Agency Ranking
公开(公告)号：KR1020110093476A
公开(公告)日：2011-08-18
申请号：KR1020100013545
申请日：2010-02-12
Applicant: 삼성전자주식회사
IPC: H01L21/205 , H01L33/02
CPC classification number: C23C16/54 , C23C16/45563 , C30B23/02 , C30B25/14 , C30B29/40 , H01L21/0254 , H01L21/0262 , H01L33/007
Abstract: PURPOSE: A vapor deposition system, a light emitting device manufacturing method, and a light emitting device are provided to maintain the temperatures of first and second chambers uniform, thereby reducing deterioration of a device. CONSTITUTION: A first chamber(101) comprises a first susceptor and at least one first gas distributor. The first gas distributor emits a gas in the direction parallel with a substrate(110). The substrate is arranged in the first susceptor. A second chamber(102) includes a second susceptor and at least one second gas distributor. The second gas distributor is arranged on the second susceptor to emit gas downward.
Abstract translation: 目的：提供气相沉积系统，发光器件制造方法和发光器件，以保持第一和第二腔室的温度均匀，从而减少器件的劣化。 构成：第一室（101）包括第一基座和至少一个第一气体分配器。 第一气体分配器沿与基板（110）平行的方向发射气体。 基板布置在第一基座中。 第二室（102）包括第二感受器和至少一个第二气体分配器。 第二气体分配器布置在第二基座上以向下排放气体。
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公开(公告)号：KR101684859B1
公开(公告)日：2016-12-09
申请号：KR1020110000916
申请日：2011-01-05
Applicant: 삼성전자주식회사
CPC classification number: H01L33/0075 , H01L33/007 , H01L33/32
Abstract: 본발명은발광다이오드제조방법및 이에의하여제조된발광다이오드에관한것으로서, 본발명의일 측면은,제1 반응챔버에서, 기판상에제1 도전형질화물반도체층및 언도프질화물반도체층을순차적으로성장시키는단계와, 상기제1 도전형질화물반도체층및 언도프질화물반도체층이성장된상태의상기기판을제2 반응챔버로이송하는단계와, 상기제2 반응챔버에서, 상기언도프질화물반도체층상에추가적인제1 도전형질화물반도체층을성장시키는단계와, 상기추가적인제1 도전형질화물반도체층상에활성층을성장시키는단계및 상기활성층상에제2 도전형질화물반도체층을성장시키는단계를포함하는발광다이오드제조방법을제공한다.
Abstract translation: 提供了一种制造发光二极管的方法和由其制造的发光二极管。 该方法包括在第一反应室中顺序地在衬底上生长第一导电型氮化物半导体层（102）和未掺杂的氮化物半导体层（103）; 将具有第一导电型氮化物半导体层和其上生长的未掺杂氮化物半导体层的衬底转移到第二反应室; 在第二反应室中的未掺杂氮化物半导体层上生长附加的第一导电型氮化物半导体层（104）; 在附加的第一导电型氮化物半导体层上生长活性层; 以及在所述有源层上生长第二导电型氮化物半导体层。
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公开(公告)号：KR1020160044638A
公开(公告)日：2016-04-26
申请号：KR1020140138881
申请日：2014-10-15
Applicant: 삼성전자주식회사
Abstract: 본발명은, 제1 도전형반도체층; 상기제1 도전형반도체층상에배치되고, 복수의양자장벽층및 복수의양자우물층이교대로적층된활성층; 및상기활성층상에배치되는제2 도전형반도체층을포함하며, 상기복수의양자장벽층중 상기제2 도전형반도체층에가장인접한양자장벽층은제1 언도프영역(undoped region) 및상기제1 언도프영역상에배치되고상기제1 언도프영역의두께보다크거나같은두께를갖는제1 도프영역(doped region)을포함하고, 상기제1 언도프영역및 제1 도프영역각각은서로다른에너지밴드갭을갖는복수의제1 단위층들(unit layers)이교대로배치되어이루어진적어도하나의정공수용영역(hole accumulation region)을포함하는것을특징으로하는반도체발광소자를제공한다.
Abstract translation: 提供了一种半导体发光器件。 半导体发光器件包括：第一导电半导体层; 有源层，其设置在所述第一导电半导体层上并且包括交替层叠的多个量子势垒层和多个量子阱层; 以及设置在所述有源层上的第二导电半导体层，其中在所述量子势垒层中最靠近所述第二导电半导体层的量子势垒层包括第一未掺杂区域和设置在所述第一未掺杂区域上的第一掺杂区域，并且具有 厚度大于或等于第一未掺杂区域的厚度，并且第一未掺杂区域和第一掺杂区域中的每一个包括至少一个空穴积聚区域，其中空穴积聚区域与多个第一单元层交替形成 具有不同的能带隙。
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公开(公告)号：KR1020120079632A
公开(公告)日：2012-07-13
申请号：KR1020110000916
申请日：2011-01-05
Applicant: 삼성전자주식회사
CPC classification number: H01L33/0075 , H01L33/007 , H01L33/32 , H01L33/02 , H01L2933/0008
Abstract: PURPOSE: A manufacturing method of a light emitting diode and the light emitting diode manufactured by the same are provided to minimize contamination on a semiconductor layer by growing the semiconductor layer by using two ore more reaction chambers. CONSTITUTION: A first conductivity type nitride semiconductor layer(102) and an undoped nitride semiconductor layer(103) are grown on a substrate. The substrate is transferred to a second reaction chamber. An additional first conductivity type nitride semiconductor layer(104) is grown on the undoped nitride semiconductor layer. An active layer(105) is grown on the additional first conductivity type nitride semiconductor layer. A second conductive type nitride semiconductor layer(106) is grown on the active layer.
Abstract translation: 目的：提供一种发光二极管的制造方法和由其制造的发光二极管，以通过使用两个以上的反应室来生长半导体层来最小化对半导体层的污染。 构成：在基板上生长第一导电型氮化物半导体层（102）和未掺杂的氮化物半导体层（103）。 将基底转移到第二反应室。 在未掺杂的氮化物半导体层上生长附加的第一导电型氮化物半导体层（104）。 在附加的第一导电型氮化物半导体层上生长有源层（105）。 在有源层上生长第二导电型氮化物半导体层（106）。
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