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公开(公告)号：KR1020090039173A
公开(公告)日：2009-04-22
申请号：KR1020070104657
申请日：2007-10-17
Applicant: 삼성전자주식회사
CPC classification number: G11C16/10 , G11C11/5628 , G11C11/5642 , G11C16/3418 , G11C2211/5621
Abstract: An apparatus and a method of multi-bit programming is provided to form optimum distribution by using a multi-level programming method. A multi bit cell array(710) comprises a first page(711) and a second page(712). A first page comprises a plurality of first multi bit cells, and a second page comprises a plurality of second multi bit cells. A programming unit(720) programs the first and second data in the first and second multi bit cells. A verification unit(730) verifies a programming condition of first data in first multi bit cells by using the first test voltage and verifies a programming condition of the second data in second multi bit cells by taking advantage of the second test voltage. The verification unit compares the threshold voltage of first multi bit cells with the first test voltage.
Abstract translation: 提供多位编程的装置和方法，以通过使用多级编程方法来形成最佳分布。 多比特单元阵列（710）包括第一页（711）和第二页（712）。 第一页包括多个第一多位单元，第二页包括多个第二多位单元。 编程单元（720）对第一和第二多位单元中的第一和第二数据进行编程。 验证单元（730）通过使用第一测试电压来验证第一多位单元中的第一数据的编程状态，并通过利用第二测试电压来验证第二多位单元中的第二数据的编程条件。 验证单元将第一多位单元的阈值电压与第一测试电压进行比较。
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公开(公告)号：KR1020090035871A
公开(公告)日：2009-04-13
申请号：KR1020070100889
申请日：2007-10-08
Applicant: 삼성전자주식회사
CPC classification number: G11C11/5628 , G11C2211/5621 , G11C2211/5648
Abstract: A programming method of non-volatile memory cell is provided to program the data more than 3 bit without using a complicated programming process. In the first and second programming levels(1,2-1,2-2), the threshold voltage of the nonvolatile memory cell belongs to one threshold voltage distribution among the first to fourth threshold voltage distributions(D1~D4) according to the first and second bit values of programming object data. In the third programming level(3-1~3-4), the threshold voltage of the nonvolatile memory cell maintains the threshold voltage at the first and second programming level according to the third bit value of data.
Abstract translation: 提供了一种非易失性存储单元的编程方法，用于在不使用复杂编程过程的情况下对3位以上的数据进行编程。 在第一和第二编程电平（1,2-1,2-2）中，非易失性存储单元的阈值电压属于第一至第四阈值电压分布（D1〜D4）中的一个阈值电压分布， 和编程对象数据的第二位值。 在第三编程电平（3-1〜3-4）中，非易失性存储单元的阈值电压根据数据的第三位值将阈值电压维持在第一和第二编程电平。
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公开(公告)号：KR1020090025698A
公开(公告)日：2009-03-11
申请号：KR1020070090744
申请日：2007-09-07
Applicant: 삼성전자주식회사
Abstract: A heat exchanger is provided to reduce the time the water stays in the fins by using a hydrophilic member for drawing the water in the bottom of the fins. A heat exchanger comprises a plurality of heat exchange fins(11) arranged side by side, a coolant pipe(12) passing through the heat exchange fins to guide coolant, a water spray pipe(13) passing through the heat exchange fins to supply water, and a hydrophilic member(30) contacting the bottom of the heat exchange fin. The hydrophilic member is made of elastically deformable material and has a hydrophilic layer on the surface.
Abstract translation: 提供了一种热交换器，通过使用用于在翅片底部拉出水的亲水部件来减少水留在翅片中的时间。 热交换器包括并排布置的多个热交换翅片（11），通过热交换翅片引导冷却剂的冷却剂管（12），通过热交换翅片供水的喷水管（13） 以及与热交换翅片的底部接触的亲水构件（30）。 亲水构件由可弹性变形的材料制成并且在表面上具有亲水层。
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公开(公告)号：KR1020090017270A
公开(公告)日：2009-02-18
申请号：KR1020070081886
申请日：2007-08-14
Applicant: 삼성전자주식회사
CPC classification number: G11C11/5628 , G11C16/0483 , G11C2211/5641
Abstract: A multi-bit programming device and a method thereof are provided to improve a confidence level of data and to increase the number of bits stored in total memory cells. A multi-bit programming device(100) includes a first programming unit and a second programming unit. The first programming unit stores data of a first bit number in one or more first memory cells(113) connected to one or more first bit lines(111). The second programming unit stores data of a second bit number in one or more second memory cells(114) connected to one or more second bit lines(112).
Abstract translation: 提供了一种多位编程设备及其方法，以提高数据的置信度并增加存储在总存储单元中的位数。 多位编程设备（100）包括第一编程单元和第二编程单元。 第一编程单元将连接到一个或多个第一位线（111）的一个或多个第一存储单元（113）中的第一位数的数据存储。 第二编程单元将连接到一个或多个第二位线（112）的一个或多个第二存储单元（114）中的第二位数的数据存储。
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公开(公告)号：KR100873824B1
公开(公告)日：2008-12-15
申请号：KR1020070043669
申请日：2007-05-04
Applicant: 삼성전자주식회사
CPC classification number: G06F11/1008
Abstract: An Error Control Code (ECC) apparatus may include a control signal generator that generates an ECC control signal based on channel information. The ECC apparatus also may include: a plurality of ECC encoding controllers that output data respectively inputted via storage elements corresponding to the ECC control signal; and/or an encoding unit that encodes, using a plurality of data outputted from the plurality of ECC encoding controllers, encoding input data into a number of subdata corresponding to the ECC control signal. In addition or in the alternative, the ECC apparatus may include: a plurality of ECC decoding controllers that output data respectively inputted via the storage elements corresponding to the ECC control signal; and/or a decoding unit that decodes, using a plurality of data outputted from the plurality of ECC decoding controllers, a number of decoding input data corresponding to the ECC control signal into one piece of output data.
Abstract translation: 错误控制码（ECC）设备可以包括基于信道信息生成ECC控制信号的控制信号生成器。 ECC设备还可以包括：多个ECC编码控制器，其输出经由对应于ECC控制信号的存储元件分别输入的数据; 和/或编码单元，其使用从所述多个ECC编码控制器输出的多个数据来编码输入数据到对应于所述ECC控制信号的多个子数据中。 另外或替代地，ECC设备可以包括：多个ECC解码控制器，其输出经由对应于ECC控制信号的存储元件分别输入的数据; 和/或解码单元，其使用从所述多个ECC解码控制器输出的多个数据将与所述ECC控制信号相对应的解码输入数据的数量解码为一个输出数据。
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Patent Agency Ranking
公开(公告)号：KR1020080107921A
公开(公告)日：2008-12-11
申请号：KR1020070056317
申请日：2007-06-08
Applicant: 삼성전자주식회사
CPC classification number: G11C16/10 , G11C11/5628 , G11C16/3418 , G11C16/3427
Abstract: An apparatus for programming a data of memory cell is provided to reduce error probability and the number of program by considering a floating poly coupling generated between memory cells. An apparatus for programming a data of memory cell is comprised of steps: calculating the change value of the threshold voltage based on source data of the memory cells(S430); converting source data programmed based on the change value of the calculated threshold voltage(S440); programming converted source data(S450). In especially calculating the change value of the threshold voltage, using the memory cells neighboring each other.
Abstract translation: 提供一种用于对存储器单元的数据进行编程的装置，以通过考虑在存储器单元之间产生的浮动多重耦合来减小误差概率和程序数量。 用于对存储单元的数据进行编程的装置包括以下步骤：基于存储器单元的源数据计算阈值电压的变化值（S430）; 转换基于所计算的阈值电压的变化值编程的源数据（S440）; 编程转换源数据（S450）。 特别是计算阈值电压的变化值时，使用彼此相邻的存储单元。
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公开(公告)号：KR1020080097646A
公开(公告)日：2008-11-06
申请号：KR1020070042764
申请日：2007-05-02
Applicant: 삼성전자주식회사
CPC classification number: G11C11/5628 , G11C2211/5621 , G11C2211/5641
Abstract: An apparatus of multi bit programming for non-volatile memory is provided to reduce error in programming while not requiring an additional semiconductor chip area. In an apparatus of multi bit programming for non-volatile memory, a multi-bit programming part unit(510) programs original data of multi-bit in the target memory cell in the non-volatile memory cell array multi-bit. A backup programming unit(520) selects the backup memory cell for each bit of original data, and programs each bit of original data in the selected backup memory cell. A data validation unit(530) compares data programmed in backup memory cells with data programmed in the target memory cell multi-bit, and verifies the multi-bit programming success.
Abstract translation: 提供用于非易失性存储器的多位编程装置，以减少编程中的误差，而不需要额外的半导体芯片面积。 在用于非易失性存储器的多位编程的装置中，多比特编程部分单元（510）在多位非易失性存储单元阵列中编程目标存储器单元中的多位的原始数据。 备份编程单元（520）为原始数据的每一位选择备份存储器单元，并对所选择的备份存储单元中的每一位原始数据进行编程。 数据验证单元（530）将备份存储器单元中编程的数据与在目标存储单元多位中编程的数据进行比较，并验证多位编程成功。
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公开(公告)号：KR1020080068441A
公开(公告)日：2008-07-23
申请号：KR1020070006259
申请日：2007-01-19
Applicant: 삼성전자주식회사
IPC: F04C29/00 , F04C23/00 , F04C18/356
CPC classification number: F01C21/0854 , F04C18/3562 , F04C23/001 , F04C23/008 , F04C2270/13
Abstract: A variable capacity rotary compressor is provided to lower initial discharge pressure applied to a vane guide groove by using a throttling unit installed at any one of a high pressure pipe and a connecting pipe of a vane control unit. A variable capacity rotary compressor comprises a housing, first and second vanes(43,53), first and second vane guide grooves(44,54), and a vane control unit(60). The vane control unit has a control valve(64), a connecting pipe(61), a high pressure pipe(62), a low pressure pipe(63), and a throttling unit(80). The control valve is installed at the vane guide grooves, changes the pipes to selectively apply discharge pressure and suction pressure. The connecting pipe connects the vane guide groove and the control valve. The high pressure pipe connects an outlet of the compressor and the control valve. The low pressure pipe connects an inlet of the compressor and the control valve. The throttling unit reduces at least one of the high and the low pressure pipe's bore size to lower initial discharge pressure exerted to the vane guide groove.
Abstract translation: 提供一种可变容量的旋转压缩机，通过使用安装在叶片控制单元的高压管和连接管中的任一个的节流单元来降低施加到叶片引导槽的初始排出压力。 可变容量的旋转压缩机包括壳体，第一和第二叶片（43,43），第一和第二叶片引导槽（44,54）和叶片控制单元（60）。 叶片控制单元具有控制阀（64），连接管（61），高压管（62），低压管（63）和节流单元（80）。 控制阀安装在叶片导向槽处，改变管道以选择性地施加排出压力和吸入压力。 连接管连接叶片引导槽和控制阀。 高压管连接压缩机的出口和控制阀。 低压管连接压缩机的入口和控制阀。 节流装置降低了高压管和低压管的孔径中的至少一个，以降低施加到叶片引导槽的初始排出压力。
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公开(公告)号：KR1020080067125A
公开(公告)日：2008-07-18
申请号：KR1020070004310
申请日：2007-01-15
Applicant: 삼성전자주식회사
IPC: F04C29/00
CPC classification number: F25B1/10 , F25B49/022 , F25B2400/0751 , F25B2600/2521
Abstract: An air conditioning system and a control method thereof are provided to reduce operating noise of a second compressor caused by change in the compression capacity by preventing a chattering of a vane when controlling an operation of the vane of the second compressor. An air conditioning system comprises a first compressor and a second compressor(20). The second compressor is installed in parallel to the first compressor and has a variable compression capacity. The second compressor includes a housing(31) having a compression chamber(32), a vane(43), a vane guide groove(35) formed in the housing, and a vane controller(50). The vane moves in the radius direction of the compression chamber. The vane controller controls an operation of the vane. The vane controller includes a control valve(51) for switching a passage such that intake pressure of the first or second compressor and exhaust pressure of the first compressor is selectively applied to the vane guide groove.
Abstract translation: 提供了一种空气调节系统及其控制方法，用于通过在控制第二压缩机的叶片的操作时防止叶片振动，从而降低压缩容量的变化引起的第二压缩机的运转噪音。 空调系统包括第一压缩机和第二压缩机（20）。 第二压缩机与第一压缩机并联安装并具有可变的压缩容量。 第二压缩机包括具有压缩室（32），叶片（43），形成在壳体中的叶片引导槽（35）和叶片控制器（50）的壳体（31）。 叶片沿压缩室的半径方向移动。 叶片控制器控制叶片的操作。 叶片控制器包括用于切换通道的控制阀（51），使得第一或第二压缩机的进气压力和第一压缩机的排气压力被选择性地施加到叶片引导槽。
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公开(公告)号：KR1020080061756A
公开(公告)日：2008-07-03
申请号：KR1020060136821
申请日：2006-12-28
Applicant: 삼성전자주식회사
CPC classification number: G11C11/5628 , G11C16/10 , G11C2211/5642
Abstract: A memory cell programming method using three latches and a semiconductor memory device thereof are provided to perform memory cell programming without internal reading of prior bit from a memory cell, by using three latches. At least one memory cell stores data of n bits where n is a natural number equal to or larger than 3. A first latch(210) receives the data and then latches the data. A second latch(220) latches k-th bit to be written in the memory cell from the first latch where k is a natural number equal to or larger than 2. A third latch(230) latches (k-1)th bit written in the memory cell from the first latch. The k-th bit latched in the second latch is written in the memory cell, by referring to the (k-1)th bit latched in the third latch.
Abstract translation: 提供了使用三个锁存器及其半导体存储器件的存储器单元编程方法，以通过使用三个锁存器来执行存储器单元编程，而不需要从存储器单元内部读取先前位。 至少一个存储单元存储n位的数据，其中n是等于或大于3的自然数。第一锁存器（210）接收数据，然后锁存数据。 第二锁存器（220）锁存要从第一锁存器写入存储器单元的第k位，其中k是等于或大于2的自然数。第三锁存器（230）锁存（k-1）位 在第一个锁存器的存储单元中。 通过参考在第三锁存器中锁存的第（k-1）位将在第二锁存器中锁存的第k位写入存储器单元。
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