公开(公告)号：KR1020130077699A

公开(公告)日：2013-07-09

申请号：KR1020110146562

申请日：2011-12-29

Applicant: 제일모직주식회사

Inventor： 노현수 ,  김용국 ,  정영철 ,  강동헌 ,  김동진 ,  김태영 ,  홍창기

IPC: C09K3/14 ,  H01L21/304

CPC classification number: C09K3/1409 ,  C09G1/02 ,  H01L21/31053

Abstract: PURPOSE: A CMP slurry composition is provided to be able to minimize the dishing on the oxide film over a trench layer while maintaining the polishing speed ratio of the oxide film on the trench layer to the nitride film layer over 10. CONSTITUTION: A CMP slurry composition comprises metal oxide particles having a positive Zeta electric potential, zwitterionic compound, cationic surfactant, and ultra-pure water. The metal oxide particles are manufactured by calcination, flame oxidation or hydrothermal synthesis. The metal oxide particles having a positive Zeta electric potential have 70-150 nm of an average particle diameter and 10-50 m^2/g of a specific surface area. The metal oxide particles having a positive Zeta electric potential are ceria particles. A polishing method comprises a step of polishing a semiconductor wafer by using the CMP slurry composition. [Reference numerals] (AA) First grinding; (BB) Convex part; (CC) Concave part; (DD) Second grinding; (EE) Third grinding

Abstract translation: 目的：提供CMP浆料组合物，以便能够最小化在沟槽层上的氧化膜上的凹陷，同时保持沟槽层上的氧化物膜与超过10°的氮化物膜层的抛光速度比。构成：CMP浆料 组合物包含具有正ζ电位的金属氧化物颗粒，两性离子化合物，阳离子表面活性剂和超纯水。 金属氧化物颗粒通过煅烧，火焰氧化或水热合成来制造。 具有正ζ电位的金属氧化物颗粒具有70-150nm的平均粒径和10-50m 2 / g的比表面积。 具有正Zeta电位的金属氧化物颗粒是二氧化铈颗粒。 抛光方法包括通过使用CMP浆料组合物来研磨半导体晶片的步骤。 （附图标记）（AA）第一次研磨; （BB）凸部; （CC）凹面; （DD）二次研磨; （EE）三次研磨

公开(公告)号：KR100715184B1

公开(公告)日：2007-05-07

申请号：KR1020050135910

申请日：2005-12-30

Applicant: 제일모직주식회사

Inventor： 노현수 ,  이태영 ,  박태원 ,  이인경

IPC: C09K3/14

Abstract: 본 발명은 실리콘 웨이퍼 연마용 슬러리 조성물에 관한 것으로 상세하게는 평균 입경이 50∼150nm인 콜로이드 실리카, pH 조절제 및 탈 이온수를 포함하는 조성에 세정성을 강화하기 위하여 알콜기가 부가된 아미노알킬기가 치환된 이종고리형 질소화합물과 유기산의 염을 구성 요소로 하는 것을 특징으로 하는 슬러리에 관한 것이다.
본 발명에 따른 연마용 슬러리를 사용하여 후면 연마 공정을 수행하면 연마 후 스테인 발생량이 크게 감소하고 패키지 후 신뢰성의 개선 효과를 제공할 수 있다.
실리콘 웨이퍼, 실리카. 고리형 아민류, 유기산의 염, 신뢰성

Abstract translation: 本发明是氨基烷基醇组是在为了提高去污力到包含具体的胶体二氧化硅，pH调节剂的组合物中加入，并具有5​​0〜150nm的平均粒度的去离子水涉及用于任选取代的硅晶片的抛光组合物的浆料 涉及其特征在于所述杂环状含氮化合物的盐和有机酸作为组分的浆料。

公开(公告)号：KR1020060097786A

公开(公告)日：2006-09-18

申请号：KR1020050018492

申请日：2005-03-07

Applicant: 제일모직주식회사 ,  엠이엠씨코리아 주식회사

Inventor： 노현수 ,  박태원 ,  이태영 ,  이인경 ,  이진호 ,  김영우 ,  최문로 ,  김종섭

IPC: C09K3/14

CPC classification number: H01L21/02024 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1463

Abstract: 본 발명은 실리콘 웨이퍼 연마 공정에 사용하기 위한 연마용 슬러리 조성물에 관한 것으로서, 기존의 초순수, 콜로이드 실리카, pH 조절제 및 수용성 증점제를 함유하는 연마용 슬러리 조성물에 대하여 아세트산계의 킬레이트제와 인산계 킬레이트제 중 적어도 어느 하나의 킬레이트제를 첨가하여 제조될 수 있다. 본 발명에 의해 저장 안정성이 크게 개선되었고 특히 실리콘 웨이퍼 최종 연마용으로 사용하는 경우에 웨이퍼 표면의 헤이즈와 LPD 및 표면 거칠기를 크게 개선할 수 있다.
연마용 슬러리 조성물, 콜로이드 실리카, 수용성 증점제, 아세트산계의 킬레이트제, 인산계 킬레이트제

公开(公告)号：KR100460312B1

公开(公告)日：2004-12-04

申请号：KR1020010077859

申请日：2001-12-10

Applicant: 제일모직주식회사

Inventor： 이재석 ,  김원래 ,  도원중 ,  노현수 ,  이길성

IPC: C09K3/14

Abstract: PURPOSE: A slurry composition for polishing the metal wire is provided, which is improved in polishing velocity, polishing uniformity and long-termed storage due to dispersion stability. CONSTITUTION: The slurry composition comprises 1-30 wt% of fine-powdered metal oxide; 0.01-0.5 wt% of an iodine-based compound; 0.25-2 wt% of hydrogen peroxide; 0.01-0.05 wt% of a phosphorus-based compound; 0.03-0.05 wt% of acetic acid; and the balance of deionized water. Preferably the metal oxide is silica (SiO2) and/or alumina (Al2O3); the iodine-based compound is at least one selected from the group consisting o-iodobenzoic acid, 4-iodobenzoic acid, o-iodoaniline, m-iodoaniline and p-iodoanisole; and the phosphorus-based compound is trimethyl phosphorous acid and/or triethyl phosphorous acid.

Abstract translation: 目的：提供一种用于抛光金属丝的浆料组合物，其由于分散稳定性而提高了抛光速度，抛光均匀性和长期存储。 构成：浆料组合物包含1-30重量％的细粉金属氧化物; 0.01〜0.5重量％的碘系化合物; 0.25-2重量％的过氧化氢; 0.01〜0.05重量％的磷系化合物; 0.03-0.05重量％的乙酸; 和去离子水的平衡。 优选金属氧化物是二氧化硅（SiO 2）和/或氧化铝（Al 2 O 3）; 所述碘基化合物为选自邻碘苯甲酸，4-碘苯甲酸，邻碘苯胺，间碘苯胺和对碘苯甲醚中的至少一种; 并且磷基化合物是三甲基亚磷酸和/或三乙基亚磷酸。

公开(公告)号：KR100457417B1

公开(公告)日：2004-11-18

申请号：KR1020010087451

申请日：2001-12-28

Applicant: 제일모직주식회사

Inventor： 김원래 ,  이재석 ,  도원중 ,  노현수 ,  이길성

IPC: C09K3/14

Abstract: 본 발명은 반도체 디바이스(device) 제조시 웨이퍼의 평탄화를 목적으로 하는 CMP(Chemical Mechanical Polishing/Planarization) 공정에 사용되는 연마용 슬러리 조성물에 관한 것으로, 보다 상세하게는 금속산화물 미분말, 요오드가 방향족 고리에 치환된 구조의 화합물, 비닐계 고분자 화합물, 과산화수소, 인계 화합물, 질산 및 탈이온수를 포함하는 금속배선 연마용 슬러리조성물에 관한 것이며, 본 발명의 연마용 슬러리 조성물을 사용하면 높은 연마속도와 우수한 연마균일도를 달성할 수 있으며, 연마시 발생하는 이로젼, 디싱의 문제점을 보완할 수 있고, 분산안정성이 높아 장기 보관이 용이하다.

公开(公告)号：KR100449610B1

公开(公告)日：2004-09-21

申请号：KR1020010074253

申请日：2001-11-27

Applicant: 제일모직주식회사

Inventor： 노현수 ,  이길성 ,  이재석 ,  도원중

IPC: C09K3/14

Abstract: PURPOSE: A slurry composition for polishing an insulation layer is provided, to reduce the remaining LPD(light point defect) and the pollution of a back surface of a wafer and to improve the polishing velocity and the polishing uniformity. CONSTITUTION: The slurry composition comprises 0.1-50 wt% of a metal oxide; 0.2-2 wt% of ammonia; 0.01-2 wt% of a t-alkyl ammonium base; 0.001-1 wt% of cellulose; and 0.05-1 wt% of an amine; and the balance of deionized water. The pH of the slurry composition is 10.5-11.5. Preferably the metal oxide is silica having a primary particle size of 10-80 nm, a specific surface area of 50-200 m2/g, a secondary particle size of 100-200 nm in an aqueous dispersion and a OH concentration on the surface of silica of 0.5-4/nm2 in an aqueous dispersion. Preferably the carbon number of alkyl group of the t-alkyl ammonium base is 1-3 and the cellulose has a molecular weight of 100,000 or more.

Abstract translation: 目的：提供一种用于抛光绝缘层的浆料组合物，以减少残留的LPD（光点缺陷）和晶片背面的污染并提高抛光速度和抛光均匀性。 构成：浆料组合物包含0.1-50重量％的金属氧化物; 0.2-2重量％的氨; 0.01-2重量％的叔烷基铵碱; 0.001-1重量％的纤维素; 和0.05-1重量％的胺; 和去离子水的平衡。 浆料组合物的pH值为10.5-11.5。 优选地，金属氧化物是具有10-80nm的一次粒径，50-200m 2 / g的比表面积，水分散体中的二次粒径为100-200nm的二氧化硅，以及在表面上的OH浓度 在水分散体中0.5-4 / nm 2的二氧化硅。 优选叔烷基铵碱的烷基的碳原子数为1〜3，纤维素的分子量为10万以上。

公开(公告)号：KR1020040050721A

公开(公告)日：2004-06-17

申请号：KR1020020077852

申请日：2002-12-09

Applicant: 제일모직주식회사

Inventor： 노현수 ,  박태원 ,  이길성 ,  이인경

IPC: H01L21/304

Abstract: PURPOSE: A slurry composition for final polishing of silicon wafer is provided to increase polishing speed and improve polishing characteristics. CONSTITUTION: A slurry composition for final polishing of silicon wafer contains colloid silica of 2-10 weight% as an abrasive, ammonia of 0.5-1.5 weight%, and a hydroxide alkyl cellulose based water-soluble polymer thickener of 0.2-1.0 weight%. At this time, the grain diameter of the colloid silica is in the range of 60-80 nm. The last polishing slurry composition further contains an amine compound of 0.01-1 weight%, quaternary ammonium salt of 0.01-0.5 weight%, and deionized water. Preferably, the amine compound is one selected from a group consisting of monoethanolamine, diethylene glycolamine, diethanolamine, triethanolamine, (dimethylamino)ethoxyethanol, aminoethylethanolamine, or piperidineethanol.

Abstract translation: 目的：提供用于硅晶片最终抛光的浆料组合物，以提高抛光速度并改善抛光特性。 构成：用于硅晶片最终研磨的浆料组合物含有2-10重量％的胶体二氧化硅作为研磨剂，0.5-1.5重量％的氨和0.2-1.0重量％的氢氧化烷基纤维素基水溶性聚合物增稠剂。 此时，胶体二氧化硅的粒径在60〜80nm的范围内。 最后抛光浆料组合物还含有0.01-1重量％的胺化合物，0.01-0.5重量％的季铵盐和去离子水。 胺化合物优选选自单乙醇胺，二乙二醇胺，二乙醇胺，三乙醇胺，（二甲基氨基）乙氧基乙醇，氨基乙基乙醇胺或哌啶乙醇。

公开(公告)号：KR1020040040810A

公开(公告)日：2004-05-13

申请号：KR1020020069102

申请日：2002-11-08

Applicant: 제일모직주식회사

Inventor： 도원중 ,  이길성 ,  이인경 ,  이재석 ,  노현수 ,  정재훈

IPC: H01L21/304

Abstract: PURPOSE: A CMP(Chemical Mechanical Polishing) slurry for polishing a copper line is provided to be capable of protecting a porous layer formed at the surface of an oxidized copper line for preventing additional oxidation and conserving a high polishing speed. CONSTITUTION: A CMP slurry for polishing a copper line contains metal oxide micro powder, peroxide compound, benzene based compound, ammonium salt or amine based compound, carboxyl based compound, and deionized water. Preferably, the CMP slurry is made of the metal oxide micro powder of 1-15 weight%, the peroxide compound of 0.1-10 weight%, the benzene based compound of 0.01-0.5 weight%, the ammonium salt or amine based compound of 0.01-0.5 weight%, the carboxyl based compound of 0.001-0.5 weight% and the deionized water.

Abstract translation: 目的：提供用于抛光铜线的CMP（化学机械抛光）浆料，以能够保护形成在氧化铜线表面的多孔层，以防止额外的氧化并保持高抛光速度。 构成：用于抛光铜线的CMP浆料包含金属氧化物微粉末，过氧化物化合物，苯基化合物，铵盐或胺基化合物，羧基化合物和去离子水。 优选地，CMP浆料由1-15重量％的金属氧化物微粉末，0.1-10重量％的过氧化物化合物，0.01-0.5重量％的苯基化合物，0.01〜0.1重量％的铵盐或胺系化合物 -0.5重量％，0.001-0.5重量％的羧基化合物和去离子水。

公开(公告)号：KR1020040033873A

公开(公告)日：2004-04-28

申请号：KR1020020063159

申请日：2002-10-16

Applicant: 제일모직주식회사

Inventor： 이재석 ,  김원래 ,  도원중 ,  정재훈 ,  노현수 ,  박태원 ,  이인경 ,  이길성

IPC: H01L21/302

Abstract: PURPOSE: A slurry composition for chemical mechanical polishing of metal having enhanced polishing ability and improved stability and a manufacturing method thereof are provided to be capable of conserving a high polishing speed and improving chemical and distributional stability. CONSTITUTION: A CMP slurry composition contains metal oxide, hydrogen peroxide solution, iron compound, imidazole based compound and deionized water. At this time, the pH of the CMP slurry composition is in the range of 2-4. Preferably, the metal oxide is made of one selected from a group consisting of silica, aluminum, ceria, and titania. Preferably, the imidazole based compound is made of one selected from a group consisting of 4-imidazole methanol, 4-imidazole ethanol, and 4-imidazole carboxyl acid. Preferably, the pH of the composition is controlled by using nitric acid or acetic acid.

Abstract translation: 目的：提供具有增强的研磨能力和改善的稳定性的金属的化学机械抛光用浆料组合物及其制造方法，能够保持高抛光速度并提高化学和分散稳定性。 构成：CMP浆料组合物含有金属氧化物，过氧化氢溶液，铁化合物，咪唑基化合物和去离子水。 此时，CMP浆料组合物的pH在2-4的范围内。 优选地，金属氧化物由选自二氧化硅，铝，二氧化铈和二氧化钛的一种制成。 优选地，咪唑基化合物由选自4-咪唑甲醇，4-咪唑乙醇和4-咪唑羧酸的一种制成。 优选地，通过使用硝酸或乙酸来控制组合物的pH。

公开(公告)号：KR1020030057111A

公开(公告)日：2003-07-04

申请号：KR1020010087485

申请日：2001-12-28

Applicant: 제일모직주식회사

Inventor： 김원래 ,  이재석 ,  도원중 ,  노현수 ,  이길성

IPC: C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1463 ,  C23F3/00 ,  H01L21/3212 ,  H01L21/7684

Abstract: PURPOSE: Provided is a slurry composition suitable for CMP(Chemical Mechanical Polishing/Planarization) process of metal line, which shows uniform polishing capability and excellent dispersion stability when stored for a long time, and which overcomes erosion and recess problems occurring when polishing. CONSTITUTION: The composition comprises 1-30 wt% of metal oxide particles, 0.01-1 wt% of iodine-based compound, 0.25-2 wt% of hydrogen peroxide, 0.01-0.05 wt% of phosphorus-based compound, 0.01-1 wt% of polyacrylic acid, 0.3-0.5 wt% of nitric acid, and the rest of deionized water. The metal oxide is silica(SiO2) and/or alumina(Al2O3), the iodine-based compound is at least one selected from the group consisting of iodobenzene diacetate, iodobenzoic acid, and iodoaniline, and the phosphorus-based compound is trimethyl phosphite or triethyl phosphite.

Abstract translation: 目的：提供适用于金属线的CMP（化学机械抛光/平面化）工艺的浆料组合物，其在长时间储存​​时具有均匀的研磨能力和优异的分散稳定性，并且克服了抛光时所产生的侵蚀和凹陷问题。 组成：该组合物包含1-30重量％的金属氧化物颗粒，0.01-1重量％的碘基化合物，0.25-2重量％的过氧化氢，0.01-0.05重量％的磷基化合物，0.01-1重量％ ％的聚丙烯酸，0.3-0.5重量％的硝酸和其余的去离子水。 金属氧化物是二氧化硅（SiO 2）和/或氧化铝（Al 2 O 3），碘系化合物是选自二苯乙酮，碘苯甲酸和碘苯胺中的至少一种，磷系化合物是亚磷酸三甲酯或 亚磷酸三乙酯