-
公开(公告)号：KR1020130069127A
公开(公告)日：2013-06-26
申请号：KR1020110136694
申请日：2011-12-16
Applicant: 한국전자통신연구원
IPC: H01L31/107
CPC classification number: H01L31/107
Abstract: PURPOSE: An avalanche photo diode and a manufacturing method thereof are provided to minimize dark current induced to the upper surface of a clad layer by forming an insulation area in the clad layer between an active area and a guard ring area. CONSTITUTION: An light absorption layer(12) is formed on a substrate(10). A clad layer(18) is formed on the light absorption layer. An active layer(30) is formed in the clad layer. A guard ring area(32) is formed at the circumference of the active area. An insulation area(36) is formed between the guard ring area and the active area.
Abstract translation: 目的：提供一种雪崩光电二极管及其制造方法，以通过在有源区域和保护环区域之间的包覆层中形成绝缘区域来最小化对包层的上表面产生的暗电流。 构成：在基板（10）上形成光吸收层（12）。 在光吸收层上形成包覆层（18）。 在包覆层中形成有源层（30）。 在活动区域的周围形成保护环区域（32）。 在保护环区域和有效区域之间形成绝缘区域（36）。
-
公开(公告)号：KR101193635B1
公开(公告)日：2012-10-24
申请号：KR1020080124871
申请日：2008-12-09
IPC: G06F15/00
CPC classification number: G06F9/542 , G06F2209/544
Abstract: 본 발명은 정책기반의 데이터 처리시스템 및 그 방법에 관한 것이다.
본 발명에 따르면, 데이터 처리시스템의 패턴 해석부는 패턴을 토대로 패턴 핸들러를 생성하고, 생성된 패턴 핸들러를 정책 기반으로 스케줄링하여 데이터 필터링 및 그룹핑을 수행한다. 또한, 이벤트 데이터의 각 데이터 타입 별로 대응하는 처리유형에 해당하는 처리함수를 객체 모듈화하고, 패턴 핸들러를 통해 핸들링하여 사용한다.
정책, 패턴, 필터, RFID, USN-
公开(公告)号：KR1020110126971A
公开(公告)日：2011-11-24
申请号：KR1020100046549
申请日：2010-05-18
Applicant: 한국전자통신연구원
IPC: H04B10/2581 , H04B10/43
CPC classification number: H01S5/0428 , H01S5/0421 , H01S5/0425 , H04B10/25
Abstract: PURPOSE: A wavelength independent light source is provided to include the output characteristic in a wide operation wavelength range. CONSTITUTION: A forward upper electrode layer(112f) is arranged in order to be overlapped on an upper clad layer. A forward bias is applied to the forward upper electrode layer. A reverse upper electrode layer(112r) is separated from the forward upper electrode layer on the upper clad. The reverse upper electrode layer is arranged in order to be overlapped with the absorber.
Abstract translation: 目的：提供波长独立的光源，以在宽的工作波长范围内包括输出特性。 构成：配置正向上电极层（112f）以便重叠在上包层上。 正向偏压施加到正向上电极层。 反向上电极层（112r）与上包层上的前上电极层分离。 布置反向上电极层以与吸收体重叠。
-
公开(公告)号：KR101062395B1
公开(公告)日：2011-09-06
申请号：KR1020080130968
申请日：2008-12-22
Applicant: 한국전자통신연구원
IPC: G02B6/12 , H04B10/291
Abstract: 본 발명은 광증폭기에 관한 것이다. 본 발명의 광증폭기는, 입사된 광신호를 입력받는 수동 도파로 영역, 및 상기 수동 도파로 영역에 접합되고, 상기 입력된 광신호를 변조하는 능동 도파로 영역을 포함하되, 상기 수동 도파로 영역은 다중 모드 간섭계를 갖는 것을 특징으로 한다.
광증폭기, MMI, RSOA-
公开(公告)号：KR1020100073968A
公开(公告)日：2010-07-01
申请号：KR1020090080500
申请日：2009-08-28
Applicant: 한국전자통신연구원
IPC: G02B6/12
Abstract: PURPOSE: An optical amplifier according to the present invention is provided to obtain broad frequency bandwidth even in the low current. CONSTITUTION: A manual waveguide area(341) is inputted with an incident optical signal. The mode is controlled. An active waveguide area(342) is connected to the passive waveguide domain. The concentration of the carrier is varied by the applied current. The gain of the optical signal passing through the passive waveguide area is modulated. The active waveguide area uses the resonance phenomenon through controlling the internal loss.
Abstract translation: 目的：提供根据本发明的光放大器，即使在低电流下也能获得宽频带宽。 构成：手动波导区域（341）被输入入射光信号。 模式被控制。 有源波导区域（342）连接到无源波导域。 载体的浓度由所施加的电流而变化。 通过无源波导区域的光信号的增益被调制。 有源波导区域通过控制内部损耗来应用共振现象。
-
Patent Agency Ranking
公开(公告)号：KR1020100066190A
公开(公告)日：2010-06-17
申请号：KR1020080124871
申请日：2008-12-09
IPC: G06F15/00
CPC classification number: G06F9/542 , G06F2209/544
Abstract: PURPOSE: A method and a system for processing data filtering based on a policy are provided to perform filtering and grouping of data by applying a pattern based on a policy and not simply pattern matching, thereby reflecting the data filtering and grouping requirement of an application service. CONSTITUTION: A pattern handler(171) handles processing functions for applying corresponding patterns to each filtered of event data. If a pattern is inputted, a pattern handler generator(172) generates the pattern handler according to the inputted pattern. A scheduler unit(173) determines the application order of the inputted pattern based on a policy. The scheduler unit controls the driving and termination operations of the pattern handler according to a determined applying order.
Abstract translation: 目的：提供一种基于策略处理数据过滤的方法和系统，以通过应用基于策略的模式而不是简单的模式匹配来执行数据的过滤和分组，从而反映应用服务的数据过滤和分组需求 。 构成：模式处理器（171）处理处理功能，以将相应的模式应用于每个过滤的事件数据。 如果模式被输入，模式处理程序生成器（172）根据输入的模式生成模式处理程序。 调度器单元（173）基于策略来确定输入的模式的应用顺序。 调度器单元根据确定的应用顺序控制模式处理器的驱动和终止操作。
-
公开(公告)号：KR1020090061876A
公开(公告)日：2009-06-17
申请号：KR1020070128861
申请日：2007-12-12
Applicant: 한국전자통신연구원
IPC: G02B6/293
CPC classification number: G02B6/12016 , G02B6/12011 , G02B6/132
Abstract: A photonics device is provided, which makes reduction of the size of device and broadening of the wave breadth of the output channel of the arrayed waveguide grating possible. A photonics device comprises the substrate(100), the bottom core layer(120), and upper core pattern(140). The substrate has the star coupler domain(SCR) and transition area(TR). The bottom core layer is formed in the top of the substrate. The upper core pattern is formed in the top of the substrate. The upper core pattern defines the wave guide. The transition area has the double layer core construction.
Abstract translation: 提供了一种光子器件，这使得可以减小阵列尺寸和扩大阵列波导光栅的输出通道的波幅。 光子器件包括基底（100），底部核心层（120）和上部核心图案（140）。 衬底具有星形耦合器域（SCR）和过渡区域（TR）。 底部芯层形成在衬底的顶部。 上部芯图案形成在基板的顶部。 上部核心图案定义了波导。 过渡区域具有双层核心结构。
-
38.发明授权
公开(公告)号：KR100875929B1
公开(公告)日：2008-12-26
申请号：KR1020070049955
申请日：2007-05-22
Applicant: 한국전자통신연구원
IPC: H01L21/027 , H01L29/20
CPC classification number: H01L21/02543 , H01L21/02546 , H01L21/02636 , H01L21/02639
Abstract: Provided is a mask pattern for selective area growth of a semiconductor layer and a selective area growth method for a semiconductor layer for independently controlling a growth rate and a strain of the semiconductor layer. The selective area growth method includes: forming a plurality of pairs of first mask patterns, the first mask patterns in each pair including a first open area therebetween, the first open area having a width that is wider than a distance causing overgrowth of the semiconductor layer, the pairs of the first mask patterns repeatedly arranged with a period P therebetween; wherein controlling a growth rate and a strain of the semiconductor layer formed on the first open area by adjusting the period P.
Abstract translation: 提供了用于半导体层的选择性区域生长的掩模图案和用于独立地控制半导体层的生长速率和应变的用于半导体层的选择性区域生长方法。 选择性区域生长方法包括：形成多对第一掩模图案，每对中的第一掩模图案包括其间的第一开放区域，第一开放区域的宽度比导致半导体层过度生长的距离宽 ，所述第一掩模图案对以其间的周期P重复排列; 其中通过调整周期P来控制形成在第一开放区域上的半导体层的生长速率和应变。
-
39.发明公开
公开(公告)号：KR1020080052204A
公开(公告)日：2008-06-11
申请号：KR1020070049955
申请日：2007-05-22
Applicant: 한국전자통신연구원
IPC: H01L21/027 , H01L29/20
CPC classification number: H01L21/02543 , H01L21/02546 , H01L21/02636 , H01L21/02639 , H01L21/0274 , H01L29/2006
Abstract: A mask pattern for a selective area growth of a semiconductor layer and a method for growing a selective area of the semiconductor layer using the same are provided to control the growth speed of the semiconductor layer by maintaining a width of an open region between mask patterns, widely. A width(22) of a first open region between a pair of first mask patterns(20) is greater than a distance of which an over growth of a semiconductor layer. A mask pattern includes the pair of first mask patterns and a second mask pattern(30) on a region except the first open region. The widths of the first open region and the second mask pattern are controlled, so that a growth speed and strain of a semiconductor layer which is formed on the first open region are independently controlled. The width of the first open region is increased so that a tension strain of a semiconductor layer to be formed in the first open region is increased.
Abstract translation: 提供用于半导体层的选择性区域生长的掩模图案和使用其形成半导体层的选择区域的方法，以通过保持掩模图案之间的开放区域的宽度来控制半导体层的生长速度， 广泛。 一对第一掩模图案（20）之间的第一开放区域的宽度（22）大于半导体层的过度生长的距离。 掩模图案包括在第一开放区域之外的区域上的一对第一掩模图案和第二掩模图案（30）。 控制第一开放区域和第二掩模图案的宽度，从而独立地控制形成在第一开放区域上的半导体层的生长速度和应变。 第一开放区域的宽度增加，使得在第一开放区域中形成的半导体层的张力应变增加。
-
公开(公告)号：KR100759802B1
公开(公告)日：2007-09-20
申请号：KR1020050120175
申请日：2005-12-08
Applicant: 한국전자통신연구원
CPC classification number: H01S5/2231 , B82Y20/00 , H01S5/1039 , H01S5/2222 , H01S5/3211 , H01S5/3213 , H01S5/34306
Abstract: 온도특성을 향상시키고, 누설전류로 인한 광손실을 줄일 수 있는 매립형 봉우리 도파로 레이저 다이오드를 제공한다. 그 다이오드는 클래드층 상의 일부에 동일한 폭으로 수직하게 연장되며, 선택적 식각층과 제1 도전형의 제1 화합물층으로 이루어진 봉우리 영역을 포함한다. 봉우리 영역의 바깥 쪽의 클래드층 상에 봉우리 영역의 깊이와 동일한 두께를 가지고, 제1 도전형과 반대되는 제2 도전형의 제2 화합물층을 포함하는 pnp 전류차단층을 포함한다. 이때, 전류차단층은 상기 제2 화합물 상으로 확장된 제1 화합물층을 포함한다.
레이저 다이오드, 매립형, 봉우리, pnp 전류차단층
-
-
-
-
-
-
-
-
-
Search Results
116
records
(took 0.028 seconds)
