公开(公告)号：DE102004041641A1

公开(公告)日：2005-07-28

申请号：DE102004041641

申请日：2004-08-27

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  XU CHONGYING ,  BAUM THOMAS H ,  LAXMAN RAVI K ,  BOROVIK ALEXANDER S

IPC: B01D3/36 ,  C07F7/08 ,  C07F7/20 ,  C07F7/21 ,  C08G77/34 ,  C09D4/00 ,  C23C16/40 ,  C23C16/44 ,  H01L21/312

Abstract: A siloxane dielectric precursor for use in a chemical vapor deposition (CVD) process, which has been dosed with a stabilizing agent(s) selected from free-radical inhibitors, end-capping agents and mixtures thereof. The stabilized siloxane dielectric precursor reduces the occurrence of premature deposition reactions occurring in the heated environment of the CVD delivery lines and process hardware.

公开(公告)号：GB2405404A

公开(公告)日：2005-03-02

申请号：GB0418732

申请日：2004-08-20

Applicant: ADVANCED TECH MATERIALS

Inventor： CHEN TIANNIU ,  XU CHONGYING ,  BAUM THOMAS H ,  LAXMAN RAVI K ,  BOROVIK ALEXANDER S

IPC: B01D3/36 ,  C07F7/08 ,  C07F7/20 ,  C07F7/21 ,  C08G77/34 ,  C09D4/00 ,  C23C16/40 ,  C23C16/44 ,  H01L21/312

Abstract: A stabilised siloxane dielectric precursor, for use in a chemical vapour deposition (CVD) process, dosed with a stabilising agent or agents selected from free radical inhibitors, end-capping agents or a mixture thereof. Preferred siloxane dielectric precursors are cyclosiloxanes such as polyhedral oligomeric silsesquioxanes (POSS), octamethylcyclotetrasiloxane (OMCTS), hexamethylcyclotetrasiloxane (HMCTS), tetramethylcyclotetrasiloxane (TMCTS) and mixtures thereof. Suitable end-capping agents are monofunctional silylating agents having a formula R R R SiX, wherein X is a reactive site and R -R are hydrogen, C1-C8 alkyl or C5-C12 aryl, preferably silyl-N-methylacetamides, naphthylphenylmethylsilanol (NPMS), trifluoropropyldimethylsilyl-N-methylacetamide (TFSA), bis(trimethylsilyloxy)methylsilane or hexamethyldisilazane. Suitable radical inhibitors include phenols such as butylated hydroxy toluene (BHT), hydroquinone or butylated hydroxyanisole (BHA), and diphenylamine. A process for stabilizing a cyclosiloxane dielectric precursor, optionally including azeotropic distillation and/or treatment with an absorbent bed material such as CaO, and a CVD process using the stabilised cyclosiloxane are also outlined.

公开(公告)号：EP1994555A4

公开(公告)日：2009-12-16

申请号：EP07758380

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： XU CHONGYING ,  CHEN TIANNIU ,  CAMERON THOMAS M ,  ROEDER JEFFREY F ,  BAUM THOMAS H

IPC: H01L21/31 ,  H01L21/469

CPC classification number: C23C14/088 ,  C07F17/00 ,  C23C16/409 ,  C23C16/45553

公开(公告)号：EP2018642A4

公开(公告)日：2009-05-27

申请号：EP07758385

申请日：2007-03-12

Applicant: ADVANCED TECH MATERIALS

Inventor： ROEDER JEFFREY F ,  BAUM THOMAS H ,  HENDRIX BRYAN C ,  STAUF GREGORY T ,  XU CHONGYING ,  HUNKS WILLIAM ,  CHEN TIANNIU ,  STENDER MATTHIAS

IPC: G11C11/00 ,  C23C16/30

CPC classification number: H01L51/0002 ,  C07F7/30 ,  C23C16/305 ,  C23C16/45553

Abstract: A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350°C, with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.