公开(公告)号：US11428521B2

公开(公告)日：2022-08-30

申请号：US17519641

申请日：2021-11-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Henricus Wilhelmus Maria Van Buel ,  Christophe David Fouquet ,  Hendrik Jan Hidde Smilde ,  Maurits Van der Schaar ,  Arie Jeffrey Den Boef ,  Richard Johannes Franciscus Van Haren ,  Xing Lan Liu ,  Johannes Marcus Maria Beltman ,  Andreas Fuchs ,  Omer Abubaker Omer Adam ,  Michael Kubis ,  Martin Jacobus Johan Jak

IPC: G01B11/14 ,  G03F7/20

Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

公开(公告)号：US11415900B2

公开(公告)日：2022-08-16

申请号：US17022910

申请日：2020-09-16

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Arie Jeffrey Den Boef ,  Armand Eugene Albert Koolen ,  Nitesh Pandey ,  Vasco Tomas Tenner ,  Willem Marie Julia Marcel Coene ,  Patrick Warnaar

IPC: G03F7/20 ,  G01B11/06 ,  G01B11/02 ,  G01N21/47 ,  G01N21/95 ,  G03F9/00

Abstract: Described is a metrology system for determining a characteristic of interest relating to at least one structure on a substrate, and associated method. The metrology system comprises a processor being configured to computationally determine phase and amplitude information from a detected characteristic of scattered radiation having been reflected or scattered by the at least one structure as a result of illumination of said at least one structure with illumination radiation in a measurement acquisition, and use the determined phase and amplitude to determine the characteristic of interest.

公开(公告)号：US11333985B2

公开(公告)日：2022-05-17

申请号：US17254601

申请日：2019-06-05

Applicant: ASML Netherlands B.V.

Inventor： Sebastianus Adrianus Goorden ,  Simon Reinald Huisman ,  Duygu Akbulut ,  Alessandro Polo ,  Johannes Antonius Gerardus Akkermans ,  Arie Jeffrey Den Boef

IPC: G03F9/00

Abstract: The invention provides a position sensor (300) which comprises an optical system (305,306) configured to provide measurement radiation (304) to a substrate (307). The optical system is arranged to receive at least a portion of radiation (309) diffracted by a mark (308) provided on the substrate. A processor (313) is applied to derive at least one position-sensitive signal (312) from the received radiation. The measurement radiation comprises at least a first and a second selected radiation wavelength. The selection of the at least first and second radiation wavelengths is based on a position error swing-curve model.

公开(公告)号：US11092902B2

公开(公告)日：2021-08-17

申请号：US16624609

申请日：2018-05-17

Applicant: ASML Netherlands B.V.

Inventor： Johannes Franciscus Martinus D'Achard Van Enschut ,  Tamara Druzhinina ,  Nitish Kumar ,  Sarathi Roy ,  Yang-Shan Huang ,  Arie Jeffrey Den Boef ,  Han-Kwang Nienhuys ,  Pieter-Jan Van Zwol ,  Sander Bas Roobol

IPC: G03F7/20 ,  G01B11/30 ,  G01N21/47 ,  G01N21/95 ,  G03F1/84

Abstract: Disclosed is a method and associated inspection apparatus for detecting variations on a surface of a substrate. The method comprises providing patterned inspection radiation to a surface of a substrate. The inspection radiation is patterned such that an amplitude of a corresponding enhanced field is modulated in a manner corresponding to the patterned inspection radiation. The scattered radiation resultant from interaction between the enhanced field and the substrate surface is received and variations on the surface of the substrate are detected based on the interaction between the enhanced field and the substrate surface. Also disclosed is a method of detecting any changes to at least one characteristic of received radiation, the said changes being induced by the generation of a surface plasmon at said surface of the optical element.

公开(公告)号：US11016397B2

公开(公告)日：2021-05-25

申请号：US15777601

申请日：2016-11-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Scott Anderson Middlebrooks ,  Omer Abubaker Omer Adam ,  Adrianus Cornelis Matheus Koopman ,  Henricus Johannes Lambertus Megens ,  Arie Jeffrey Den Boef

IPC: G03F7/20

Abstract: A method and a computer program product that relates to lithographic apparatuses and, processes, and more particularly to a method and computer program to inspect substrates produced by the lithographic apparatuses and processes. The method and/or computer program product includes determining contributions from independent sources from results measured from a lithography process or a substrate processed by the lithography process, wherein the results are measured using a plurality of different substrate measurement recipes.

公开(公告)号：US11009343B2

公开(公告)日：2021-05-18

申请号：US16277317

申请日：2019-02-15

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Vasco Tomas Tenner ,  Arie Jeffrey Den Boef ,  Hugo Augustinus Joseph Cramer ,  Patrick Warnaar ,  Grzegorz Grzela ,  Martin Jacobus Johan Jak

IPC: G01B11/25 ,  G03F7/20 ,  G02B27/42 ,  G03H1/00 ,  G03H1/04

Abstract: Disclosed is a method and associated apparatus for measuring a characteristic of interest relating to a structure on a substrate. The method comprises calculating a value for the characteristic of interest directly from the effect of the characteristic of interest on at least the phase of illuminating radiation when scattered by the structure, subsequent to illuminating said structure with said illuminating radiation.

公开(公告)号：US10816906B2

公开(公告)日：2020-10-27

申请号：US16254896

申请日：2019-01-23

Applicant: ASML Netherlands B.V.

Inventor： Nan Lin ,  Arie Jeffrey Den Boef ,  Sander Bas Roobol ,  Simon Gijsbert Josephus Mathijssen ,  Niels Geypen

IPC: G03F7/20 ,  G01N21/95 ,  G01N21/956 ,  G01B11/24 ,  G02F1/355 ,  G02F1/37 ,  H01S3/00 ,  H01S3/13 ,  H01S3/16 ,  G01N21/88

Abstract: Disclosed is a method of performing a measurement in an inspection apparatus, and an associated inspection apparatus and HHG source. The method comprises configuring one or more controllable characteristics of at least one driving laser pulse of a high harmonic generation radiation source to control the output emission spectrum of illumination radiation provided by the high harmonic generation radiation source; and illuminating a target structure with said illuminating radiation. The method may comprise configuring the driving laser pulse so that the output emission spectrum comprises a plurality of discrete harmonic peaks. Alternatively the method may comprise using a plurality of driving laser pulses of different wavelengths such that the output emission spectrum is substantially monochromatic.

公开(公告)号：US10809632B2

公开(公告)日：2020-10-20

申请号：US16181455

申请日：2018-11-06

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Ronald Joseph Antonius Van Den Oetelaar

IPC: G03F7/20 ,  G01N21/21 ,  G03F9/00 ,  G01N21/47

Abstract: A metrology apparatus for and a method of determining a characteristic of interest relating to at least one structure on a substrate. The metrology apparatus comprises a sensor and an optical system. The sensor is for detecting characteristics of radiation impinging on the sensor. The optical system comprises an illumination path and a detection path. The optical system is configured to illuminate the at least one structure with radiation received from a source via the illumination path. The optical system is configured to receive radiation scattered by the at least one structure and to transmit the received radiation to the sensor via the detection path.

公开(公告)号：US20200218166A1

公开(公告)日：2020-07-09

申请号：US16733890

申请日：2020-01-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Martin Jacobus Johan Jak

IPC: G03F7/20 ,  G01N21/47 ,  G01B11/30 ,  G01B11/24

Abstract: A method including evaluating a plurality of substrate measurement recipes for measurement of a metrology target processed using a patterning process, against stack sensitivity and overlay sensitivity, and selecting one or more substrate measurement recipes from the plurality of substrate measurement recipes that have a value of the stack sensitivity that meets or crosses a threshold and that have a value of the overlay sensitivity within a certain finite range from a maximum or minimum value of the overlay sensitivity.

公开(公告)号：US10591283B2

公开(公告)日：2020-03-17

申请号：US16168355

申请日：2018-10-23

Applicant: ASML Netherlands B.V.

Inventor： Henricus Petrus Maria Pellemans ,  Arie Jeffrey Den Boef

IPC: G01B11/24 ,  G03F7/20

Abstract: A device manufacturing method is disclosed. A radiated spot is directed onto a target pattern formed on a substrate. The radiated spot is moved along the target pattern in a series of discrete steps, each discrete step corresponding to respective positions of the radiated spot on the target pattern. Measurement signals are generated that correspond to respective ones of the positions of the radiated spot on the target pattern. A single value is determined that is based on the measurement signals and that is representative of the property of the substrate.