公开(公告)号：US10038117B2

公开(公告)日：2018-07-31

申请号：US15699658

申请日：2017-09-08

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih Chiu ,  Shih-I Chen ,  You-Hsien Chang ,  Hao-Min Ku ,  Ching-Yuan Tsai ,  Kuan-Chih Kuo ,  Chih-Hung Hsiao ,  Rong-Ren Lee

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/10 ,  H01L33/24 ,  H01L33/38 ,  H01L33/30 ,  H01L33/02 ,  H01L33/40 ,  H01L33/20 ,  H01L33/42 ,  H01L33/14

CPC classification number: H01L33/22 ,  H01L33/02 ,  H01L33/025 ,  H01L33/10 ,  H01L33/145 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/305 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42

Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising an main light-extraction surface, a lower surface opposite to the main light-extraction surface, a side surface connecting the main light-extraction surface and the lower surface, a first portion and a second portion between the main light-extraction surface and the first portion, wherein a concentration of a doping material in the second portion is higher than that of the doping material in the first portion and, in a cross-sectional view, the second portion comprises a first width near the main light-extraction surface and second width near the lower surface, and the first width is smaller than the second width.

公开(公告)号：US09385272B2

公开(公告)日：2016-07-05

申请号：US14852212

申请日：2015-09-11

Applicant: EPISTAR CORPORATION

Inventor： Shih-I Chen ,  Chia-Liang Hsu ,  Chien-Fu Huang ,  Tzu-Chieh Hsu

IPC: H01L33/00 ,  H01L33/10 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/44

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

Abstract: An optoelectronic device comprises an optoelectronic system for emitting a light and a semiconductor layer on the optoelectronic system, wherein the semiconductor layer comprises a metal element of Ag and an atomic concentration of Ag in the semiconductor layer is larger than 1*1016 cm−3.

Abstract translation: 光电子器件包括用于在光电子系统上发射光和半导体层的光电子系统，其中半导体层包括Ag的金属元素，并且半导体层中的Ag的原子浓度大于1×1016cm-3。

公开(公告)号：US09159871B2

公开(公告)日：2015-10-13

申请号：US14153733

申请日：2014-01-13

Applicant: Epistar Corporation

Inventor： Kuang-Ping Chao ,  Wen-Luh Liao ,  Fu-Chun Tsai ,  Shih-I Chen ,  Chia-Liang Hsu

IPC: H01L33/00 ,  H01L33/60 ,  H01L33/62 ,  H01L33/38

CPC classification number: H01L33/0079 ,  H01L33/38 ,  H01L33/46 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A manufacturing method of a light-emitting device is disclosed. The method provides for patterning a semiconductor stack on a first substrate in order to form multiple light-emitting mesas. A second substrate is then bonded to the multiple light-emitting mesas and a reflective structure is formed on the first substrate. A metal layer is then applied on the reflective structure and the metal layer is patterned to form multiple metal mesas corresponding to the multiple light-emitting mesas, with a portion of the reflective structure being exposed.

Abstract translation: 公开了一种发光器件的制造方法。 该方法提供了在第一衬底上图案化半导体堆叠以便形成多个发光台面。 然后将第二衬底接合到多个发光台面，并且在第一衬底上形成反射结构。 然后将金属层施加在反射结构上，并且金属层被图案化以形成对应于多个发光台面的多个金属台面，其中一部分反射结构被暴露。

公开(公告)号：USD737228S1

公开(公告)日：2015-08-25

申请号：US29481579

申请日：2014-02-07

Applicant: EPISTAR CORPORATION

Designer： Shih-I Chen ,  Chia-Liang Hsu ,  Chun-Yi Wu

公开(公告)号：US09087967B2

公开(公告)日：2015-07-21

申请号：US13856220

申请日：2013-04-03

Applicant: EPISTAR CORPORATION

Inventor： Shih-I Chen ,  Tsung-Xian Lee ,  Yi-Ming Chen ,  Wei-Yu Chen ,  Ching-Pei Lin ,  Min-Hsun Hsieh ,  Cheng-Nan Han ,  Tien-Yang Wang ,  Hsing-Chao Chen ,  Hsin-Mao Liu ,  Zong-Xi Chen ,  Tzu-Chieh Hsu ,  Chien-Fu Huang ,  Yu-Ren Peng

IPC: H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L25/075

CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

公开(公告)号：US08916884B2

公开(公告)日：2014-12-23

申请号：US13851997

申请日：2013-03-28

Applicant: Epistar Corporation

Inventor： Shih-I Chen ,  Wei-Yu Chen ,  Yi-Ming Chen ,  Ching-Pei Lin ,  Tsung-Xian Lee

IPC: H01L27/15 ,  H01L21/00 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L33/42 ,  H01L33/382 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is a light-emitting device comprising: a light-emitting stack with a length and a width comprising: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer on the active layer; a conductive layer with a width greater than the width of the first conductivity type semiconductor layer and under the first conductivity type semiconductor layer, the conductive layer comprising a first overlapping portion which overlaps the first conductivity type semiconductor layer and a first extending portion which does not overlap the first conductivity type semiconductor layer; a transparent conductive layer with a width greater than the width of the second conductivity type semiconductor layer over the second conductivity type semiconductor layer, the transparent conductive layer comprising a second overlapping portion which overlaps the second conductivity type semiconductor layer and a second extending portion which does not overlap the second conductivity type semiconductor layer; a first electrode substantially joined with only the first extending portion or a part of the first extending part; and a second electrode substantially joined with only the second extending portion or a part of the second extending portion.

Abstract translation: 公开了一种发光器件，包括：具有长度和宽度的发光叠层，包括：第一导电类型半导体层; 在第一导电类型半导体层上的有源层; 和有源层上的第二导电类型半导体层; 导电层，其宽度大于第一导电类型半导体层的宽度，并且在第一导电类型半导体层下方，导电层包括与第一导电类型半导体层重叠的第一重叠部分和不与第一导电类型半导体层重叠的第一延伸部分 重叠第一导电类型半导体层; 透明导电层，其宽度大于第二导电类型半导体层上的第二导电类型半导体层的宽度，透明导电层包括与第二导电类型半导体层重叠的第二重叠部分和与第二导电类型半导体层重叠的第二延伸部分 不与第二导电类型半导体层重叠; 第一电极，仅基本上与第一延伸部分或第一延伸部分的一部分连接; 以及仅与第二延伸部分或第二延伸部分的一部分基本上接合的第二电极。

公开(公告)号：US08643054B2

公开(公告)日：2014-02-04

申请号：US14011502

申请日：2013-08-27

Applicant: Epistar Corporation

Inventor： Chien-Fu Huang ,  Min-Hsun Hsieh ,  Chih-Chiang Lu ,  Chia-Liang Hsu ,  Shih-I Chen

IPC: H01L33/60 ,  H01L33/62

CPC classification number: H01L33/24 ,  H01L24/05 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/387 ,  H01L33/62 ,  H01L2224/05552 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

Abstract: A light-emitting device includes a semiconductor light-emitting stack; a current injected portion formed on the semiconductor light-emitting stack; an extension portion having a first branch radiating from the current injected portion and a second branch extending from the first branch; an electrical contact structure between the second branch and the semiconductor light-emitting stack and having a first width; and a current blocking structure located right beneath the electrical contact structure and having a second width larger than the first width.

Abstract translation: 发光装置包括半导体发光叠层; 形成在半导体发光叠层上的电流注入部分; 具有从所述电流注入部分辐射的第一分支的延伸部分和从所述第一分支延伸的第二分支; 所述第二分支和所述半导体发光叠层之间的电接触结构具有第一宽度; 以及位于电接触结构正下方并且具有大于第一宽度的第二宽度的电流阻挡结构。