公开(公告)号：GB2489830B

公开(公告)日：2014-08-20

申请号：GB201206801

申请日：2011-02-01

Applicant: IBM

Inventor： BEDELL STEPHEN ,  KIM JEE HWAN ,  INNS DANIEL ,  SADANA DEVENDRA ,  FOGEL KEITH ,  VICHICONTI JAMES

IPC: H01L21/18 ,  H01L21/02 ,  H01L21/30

Abstract: A method for layer transfer using a boron-doped silicon germanium (SiGe) layer includes forming a boron-doped SiGe layer on a bulk silicon substrate; forming an upper silicon (Si) layer over the boron-doped SiGe layer; hydrogenating the boron-doped SiGe layer; bonding the upper Si layer to an alternate substrate; and propagating a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate. A system for layer transfer using a boron-doped silicon germanium (SiGe) layer includes a bulk silicon substrate; a boron-doped SiGe layer formed on the bulk silicon substrate, such that the boron-doped SiGe layer is located underneath an upper silicon (Si) layer, wherein the boron-doped SiGe layer is configured to propagate a fracture at an interface between the boron-doped SiGe layer and the bulk silicon substrate after hydrogenation of the boron-doped SiGe layer; and an alternate substrate bonded to the upper Si layer.

公开(公告)号：GB2493244B

公开(公告)日：2013-06-26

申请号：GB201210426

申请日：2012-06-13

Applicant: IBM

Inventor： BEDELL STEPHEN ,  FOGEL KEITH ,  LAURO PAUL ,  SADANA DEVENDRA

IPC: H01L31/18

Abstract: A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.

公开(公告)号：GB2492439A

公开(公告)日：2013-01-02

申请号：GB201206930

申请日：2012-04-20

Applicant: IBM

Inventor： BEDELL STEPHEN ,  SHAHRJERDI DAVOOD ,  SADANA DEVENDRA

IPC: H01L31/18 ,  H01L21/762

Abstract: A method cleaving a semiconductor material that includes providing a germanium substrate 1 having a germanium-tin alloy layer 10 is present therein; a stressor layer 20 is deposited on a surface of the germanium substrate 1, a stress from the stressor layer 20 is applied to the germanium substrate 1, in which the stress cleaves the germanium substrate 1 to provide a cleaved surface 4, where the germanium-tin alloy layer 10 is between the germanium substrate surface 15 and the cleaved surface 4; where the germanium substrate 5a between the cleaved surface 4 and the germanium-tin alloy layer 10 is then selectively etched. Also disclosed is a method as above where the germanium-tin alloy layer 10 is weakened prior to applying the stressor layer 20, such that the applied stress from the stressor layer 20 causes a split along the germanium-tin alloy layer 10. Further disclosed is a photovoltaic device comprising a layer of germanium with a first conductivity and thickness of 1 to 10 µm and a thickness uniformity of 100nm across its entire length; and a semiconductor layer present on the germanium layer, the semiconductor layer having a second, opposite conductivity to the first.