Method for controlled layer transfer

    公开(公告)号:GB2493244B

    公开(公告)日:2013-06-26

    申请号:GB201210426

    申请日:2012-06-13

    Applicant: IBM

    Abstract: A method of controlled layer transfer is provided. The method includes providing a stressor layer to a base substrate. The stressor layer has a stressor layer portion located atop an upper surface of the base substrate and a self-pinning stressor layer portion located adjacent each sidewall edge of the base substrate. A spalling inhibitor is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion. After spalling, the stressor layer portion is removed from atop a spalled portion of the base substrate.

    Mechanically spalled films using active transfer means

    公开(公告)号:GB2494014A

    公开(公告)日:2013-02-27

    申请号:GB201209766

    申请日:2012-06-01

    Applicant: IBM

    Abstract: A spalling method includes depositing a stressor layer (5) on surface of a base substrate, and contacting the stressor layer with a planar transfer surface (15). The planar transfer surface is then traversed along a plane that is parallel to and having a vertical offset from the upper surface of the base substrate (10). The cleaved film (11) peels away from the base substrate and transfers to the planar transfer surface. The fixed distance of the vertical offset provides a uniform spalling force. Rather than using a planar transfer surface a transfer roller (30) can also be used. The roller has a curvature which is equal to the equilibrium curvature of the spalled material. There may also be an adhesive layer between the stressor layer and base substrate. The base substrate may be a semiconductor.

    5.
    发明专利
    未知

    公开(公告)号:DE68918927D1

    公开(公告)日:1994-11-24

    申请号:DE68918927

    申请日:1989-12-18

    Applicant: IBM

    Abstract: A structure, and method of fabrication thereof, having a polymeric layer (20) containing a pattern of oxide particles (44) embedded therein. The regions (26, 28, 32, 38, 40) of the polymeric material (20) having the oxide particles (44) therein have an optical reflectivity or transmitivity which is different than the optical reflectivity or transmitivity of the regions (30, 34, 36, 42) of the polymeric material (20) without the oxide particles (44). The structure can be used as an optical storage device.

    METHOD FOR CONTROLLED SPALLING
    6.
    发明专利

    公开(公告)号:GB2493244A

    公开(公告)日:2013-01-30

    申请号:GB201210426

    申请日:2012-06-13

    Applicant: IBM

    Abstract: A method of controlled layer transfer is provided. The method includes providing a stressor layer 16 to a base substrate. The stressor layer has a stressor layer portion 16A located atop an upper surface (12, fig. 1) of the base substrate 10 and a self-pinning stressor layer portion 16B located adjacent each sidewall edge of the base substrate. A spalling inhibitor (20) is then applied atop the stressor layer portion of the base substrate, and thereafter the self-pinning stressor layer portion of the stressor layer is decoupled from the stressor layer portion by applying a laser or chemical etch to the self-pinning stressor layer portion. A portion of the base substrate that is located beneath the stressor layer portion is then spalled from the original base substrate. The spalling includes displacing the spalling inhibitor from atop the stressor layer portion to control the spalling.

    Edge-exclusion spalling method for removing substrate material

    公开(公告)号:GB2492444A

    公开(公告)日:2013-01-02

    申请号:GB201208147

    申请日:2012-05-10

    Applicant: IBM

    Abstract: A method to minimize edge-related substrate breakage during spalling using an edge-exclusion region (14) where the stressor layer (16) is either non-present (excluded either during deposition or removed afterwards) or present but significantly non-adhered to the substrate surface in the exclusion region is provided. In a preferred embodiment of the present invention, the method includes forming an edge exclusion material (14) on an upper surface and near an edge of a base substrate (10â â ). A stressor layer (16) is then formed on exposed portions of the upper surface of the base substrate (10â â ) and atop the edge exclusion material (14). A portion (10â ) of the base substrate that is located beneath the stressor layer and which is not covered by the edge exclusion material is then spalled and separated from the bulk of the substrate. The material is removed from the substrate by stresses caused by the stressor layer. An adhesive layer (15) can be formed between the substrate and stressor layer. This method improves the reusability of the substrate.

    9.
    发明专利
    未知

    公开(公告)号:DE68918927T2

    公开(公告)日:1995-04-20

    申请号:DE68918927

    申请日:1989-12-18

    Applicant: IBM

    Abstract: A structure, and method of fabrication thereof, having a polymeric layer (20) containing a pattern of oxide particles (44) embedded therein. The regions (26, 28, 32, 38, 40) of the polymeric material (20) having the oxide particles (44) therein have an optical reflectivity or transmitivity which is different than the optical reflectivity or transmitivity of the regions (30, 34, 36, 42) of the polymeric material (20) without the oxide particles (44). The structure can be used as an optical storage device.

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