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    DRY ETCHING METHOD
    32.
    发明专利
    DRY ETCHING METHOD 失效

    公开(公告)号：JPH11111678A

    公开(公告)日：1999-04-23

    申请号：JP26846697

    申请日：1997-10-01

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ISHIDA MASAHIRO ,  YURI MASAAKI ,  KONDO OSAMU ,  HASHIMOTO TADAAKI ,  SUGINO TAKASHI

    IPC: H01L21/302 ,  H01L21/3065

    Abstract: PROBLEM TO BE SOLVED: To facilitate dry etching of a semiconductor for which the formation of the end face of resonator is difficult by forming a mask partially on the surface of the semiconductor and irradiating the surface of the semiconductor obliquely with ions, thereby controlling the angle of the end face of the dry etched semiconductor. SOLUTION: An SiO2 layer 2 and an Al2 O3 layer 3 are formed as a mask on a part of the surface of a semiconductor 1 constituted of GaN. The surface of the semiconductor 1 is then irradiated with BCl3 gas ions at an incident angle (x) using a parallel plate type reactive etching system, thus etching the surface of the semiconductor 1. Consequently, an etching side face 4 is formed on the semiconductor 1 through dry etching. An angle (y) between the etching side face 4 and the surface of the semiconductor 1 can be controlled by regulating the incident angle (x) of BCl3 gas ions. Maintenance of piping is facilitated when BCl3 gas is used, as compared with Cl2 gas.

    PRODUCTION OF GALLIUM NITRIDE CRYSTAL
    33.
    发明专利
    PRODUCTION OF GALLIUM NITRIDE CRYSTAL 失效

    公开(公告)号：JPH10287497A

    公开(公告)日：1998-10-27

    申请号：JP9067497

    申请日：1997-04-09

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI ,  UEDA TETSUZO ,  BABA TAKAAKI

    IPC: C30B29/38 ,  H01L21/20 ,  H01L21/205 ,  H01L29/12 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To make a crystal defect such as a crystal dislocation caused at the time of heteroepitaxial growth produced not on the side of a gallium nitride but on the side of a single crystal silicon thin film and obtain a thick-film gallium nitride crystal excellent in crystallinity by successively forming an amorphous silicon dioxide thin film, a single crystal silicon thin film and gallium nitride on a silicon substrate. SOLUTION: Oxygen ions are implanted onto a silicon substrate 1 and the resultant silicon substrate 1 is then heat-treated at, e.g. 1,320 deg.C to form an amorphous silicon dioxide thin film 2 on the silicon substrate 1 and a single crystal silicon thin film 3 thereon. An amorphous gallium nitride 4 is then formed on the single crystal silicon thin film 3 by a halide vapor-phase epitaxy(VPE) method for regulating the temperature of the substrate 1 to, e.g. 600 deg.C, feeding HCl gas through a metallic Ga surface and reacting the formed gallium chloride with NH3 . A single crystal gallium nitride 5 is further formed thereon by the halide VPE method for regulating the substrate temperature to, e.g. 1,000 deg.C.

    PRODUCTION OF GALLIUM NITRIDE CRYSTAL
    34.
    发明专利
    PRODUCTION OF GALLIUM NITRIDE CRYSTAL 失效

    公开(公告)号：JPH10287496A

    公开(公告)日：1998-10-27

    申请号：JP9067397

    申请日：1997-04-09

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI ,  UEDA TETSUZO ,  BABA TAKAAKI

    IPC: C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  H01L21/205 ,  H01L29/12 ,  H01S5/00 ,  H01S5/323 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To obtain a gallium nitride crystal excellent in flatness and crystallinity by heating a substrate in a gas atmosphere containing Ga, then forming the first gallium nitride on the substrate and subsequently forming the second gallium nitride on the first gallium nitride at a temperature higher than that for forming the first gallium nitride. SOLUTION: For example, N2 gas is introduced through a GaCl3 surface heated at the melting point or above and a substrate 1 (e.g. a silicon substrate) is then heated at, e.g. 700 deg.C in a gas atmosphere containing Ga to form growth nuclei 2 composed of, e.g. GaCl2 . The first gallium nitride 3 which is amorphous is formed on the growth nuclei 2 by, e.g. a halide vapor-phase epitaxy(VPE) method for regulating the temperature of the substrate 1 to 600 deg.C and reacting the GaCl3 with NH3 . The second gallium nitride 4 which is a single crystal is then formed on the first gallium nitride 3 at a higher temperature (e.g. 1,000 deg.C) than that for forming the first gallium nitride 3 on the first gallium nitride 3 by, e.g. the halide VPE method.

    SEMICONDUCTOR DEVICE
    35.
    发明专利
    SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JPH10189479A

    公开(公告)日：1998-07-21

    申请号：JP34695096

    申请日：1996-12-26

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： ISHIDA MASAHIRO ,  HASHIMOTO TADAAKI ,  KONDO OSAMU ,  YURI MASAAKI

    IPC: H01L21/28 ,  H01L21/205 ,  H01L33/32 ,  H01L33/36 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To suppress heating of electrode by forming a second semiconductor layer of same conductivity type on a first semiconductor layer and forming an electrode thereon with the band gap of the second semiconductor layer being set narrower than that of the first semiconductor layer thereby decreasing the contact resistance at the electrode. SOLUTION: A second semiconductor 1b of Mg doped p-type GaAsN having band gap narrower than that of a first semiconductor layer 1 of p-type GaN and an electrode 2 of Ni are formed sequentially on the first semiconductor layer 1. More specifically, trimethyl gallium, ammonia and arsine are employed as a material of the semiconductor 1b when it is grown epitaxially on the semiconductor layer 1 by MOCVD and the compositional ratio z in GaAsZN1- Z composing the semiconductor 1b is controlled by varying the flow rate ratio between ammonia and arsine. In other words, band gap is decreased by increasing the compositional ratio z of As.

    SEMICONDUCTOR LASER DEVICE
    38.
    发明专利
    SEMICONDUCTOR LASER DEVICE 失效

    公开(公告)号：JPH047881A

    公开(公告)日：1992-01-13

    申请号：JP10908590

    申请日：1990-04-25

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI ,  KUME MASAHIRO

    IPC: H01S5/00 ,  H01S5/022 ,  H01S5/042

    Abstract: PURPOSE:To increase surge breakdown strength, by selecting the distance between two electrodes on an insulator to be long enough to generate spark discharge at least one part when a surge voltage is applied. CONSTITUTION:The title device is constituted of the following; a semiconductor laser element 1, an insulator heat sink 2, gold wires 3, deposition electrodes 4B, current introducing leads 5, and a stem 6 of copper. Gaps of the deposition electrodes 4B are 30mum at three portions. As to the gaps between the deposition electrodes 4B, they must be wide enough to generate spark discharge at least one part when a surge voltage is applied, and usually smaller than or equal to 50mum. Thereby, when a surge voltage higher than or equal to about 200V is applied from outside through the current introducing leads, the electric field generated across the gap of 30mum becomes higher than or equal to the dielectric breakdown electric field of the gap, and spark discharge is generated, so that the surge voltage is not directly applied on the semiconductor laser element, and the surge breakdown strength is improved.

    SEMICONDUCTOR DEVICE
    39.
    发明专利
    SEMICONDUCTOR DEVICE 失效

    公开(公告)号：JP2001135891A

    公开(公告)日：2001-05-18

    申请号：JP31199799

    申请日：1999-11-02

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI

    IPC: H01S5/22 ,  H01S5/022 ,  H01S5/024 ,  H01S5/026

    Abstract: PROBLEM TO BE SOLVED: To restrain the decline in yield caused by short-circuit of electrodes as well as to shorten a distance between light emitting points in a multiple wavelength semiconductor laser. SOLUTION: A semiconductor laser 26 is mounted on a submount 16 through solder layers 20, 21 and 22 by junction-down mounting, and it is formed monolithically with an infrared laser part 27 and a red laser part 28 which are isolated by an isolation groove 29, where an insulating layer 14 is formed, and are placed adjacently on an n-type GaAs substrate 1.

    METHOD OF MANUFACTURING III NITRIDE BASE COMPOUND SEMICONDUCTOR SUBSTRATE
    40.
    发明专利
    METHOD OF MANUFACTURING III NITRIDE BASE COMPOUND SEMICONDUCTOR SUBSTRATE 失效

    公开(公告)号：JP2000357663A

    公开(公告)日：2000-12-26

    申请号：JP2000108497

    申请日：2000-04-10

    Applicant: MATSUSHITA ELECTRONICS CORP

    Inventor： YURI MASAAKI ,  KONDO OSAMU ,  NAKAMURA SHINJI ,  ISHIDA MASAHIRO ,  ORITA KENJI

    IPC: C30B29/38 ,  H01L21/205 ,  H01L33/32 ,  H01L33/44 ,  H01S5/323 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To manufacture a large-area III nitride base compound semiconductor substrate with a satisfactory yield and satisfactory reproducibility. SOLUTION: First, a first semiconductor film 13 that is formed of a first III nitride based compound semiconductor having a stepped portion 13c is formed on a substrate 11 (Fig. b). Thereafter, a second semiconductor film 14a composed of a second III nitride based compound semiconductor having a thermal expansion coefficient that is different from that of the first III nitride based compound semiconductor is formed (Fig. c). Thereafter, the substrate 11 is cooled, and the second semiconductor film 14a is isolated from the first semiconductor film 13 to obtain the III nitride based compound semiconductor substrate 14.

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