公开(公告)号：WO2011072153A3

公开(公告)日：2011-11-17

申请号：PCT/US2010059748

申请日：2010-12-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction three dimensional solar cell and methods for manufacturing are provided. The back contact back contact back junction three dimensional solar cell comprises a three-dimensional substrate. The substrate comprises a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer is positioned on the doped backside emitter region. Backside emitter contacts and backside base contacts connected to metal interconnects and selectively formed on three-dimensional features of the backside of three-dimensional solar cell.

Abstract translation: 提供背面接头三维太阳能电池及制造方法。 背面接触背面接合三维太阳能电池包括三维基板。 衬底包括具有钝化层的光捕获前侧表面，掺杂的基极区域和与掺杂的基极区域极性相反的掺杂的背侧发射极区域。 背面钝化层位于掺杂背侧发射极区域上。 连接到金属互连的背面发射极触点和背面底部触点，并且选择性地形成在三维太阳能电池的背面的三维特征上。

公开(公告)号：WO2015073591A9

公开(公告)日：2016-04-07

申请号：PCT/US2014065312

申请日：2014-11-12

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD ,  STALCUP THOM ,  KRAMER KARL-JOSEF ,  KAPUR PAWAN ,  CALCATERRA ANTHONY ,  RANA VIRENDRA V ,  SEUTTER SEAN M ,  WINGERT MICHAEL

Inventor： MOSLEHI MEHRDAD ,  STALCUP THOM ,  KRAMER KARL-JOSEF ,  KAPUR PAWAN ,  CALCATERRA ANTHONY ,  RANA VIRENDRA V ,  SEUTTER SEAN M ,  WINGERT MICHAEL

IPC: H01L31/00

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (Ml), the Ml metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the Ml layer, the backplane sheet comprising a plurality of via holes that expose portions of the Ml layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the Ml layer through the via holes in the backplane sheet.

Abstract translation: 描述了一种背接触太阳能电池，其包括半导体光吸收层; 第一级金属层（M1），位于光吸收层背面的Ml金属层，背面与被设计成接收入射光的光吸收层的前侧相反; 具有M1层的所述太阳能电池背面的电绝缘背板片，所述背板片包括多个通孔，所述多个通孔暴露在所述背板片下面的M1层的部分; 以及与背板接触的M2层，M2层由预先制备的金属箔材料制成，包括5〜50μm的厚度，M2层通过导电孔中的通孔与M1层电连接 底板。

公开(公告)号：WO2012162276A2

公开(公告)日：2012-11-29

申请号：PCT/US2012038907

申请日：2012-05-21

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  DESHAZER HEATHER ,  SARASWAT VIVEK ,  KAPUR PAWAN

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  ANBALAGAN PRANAV ,  DESHAZER HEATHER ,  SARASWAT VIVEK ,  KAPUR PAWAN

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction emitter and homo-junction emitter solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

Abstract translation: 公开了用于生产各种类型的异质结发射体和均联发射体太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺或其它切割技术（例如离子注入和加热）制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

公开(公告)号：WO2011072179A3

公开(公告)日：2011-11-17

申请号：PCT/US2010059783

申请日：2010-12-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL ,  HARWOOD DUNCAN ,  MANSOORI MAJID ,  WINGERT MICHAEL

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL ,  HARWOOD DUNCAN ,  MANSOORI MAJID ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact back junction solar cell using semiconductor wafers and methods for manufacturing are provided. The back contact back junction solar cell comprises a semiconductor wafer having a doped base region, a light capturing front side surface, and a doped backside emitter region. A front side and backside dielectric layer and passivation layer provide enhance light trapping and internal reflection. Backside base and emitter contacts are connected to metal interconnects forming a metallization pattern of interdigitated fingers and busbars on the backside of the solar cell.

Abstract translation: 提供了使用半导体晶片的背接触背结太阳能电池和用于制造的方法。 背接触背结太阳能电池包括具有掺杂基极区域，光捕获正面表面和掺杂背面发射极区域的半导体晶片。 正面和背面介电层和钝化层提供增强的光俘获和内部反射。 背侧基极和发射极触点连接到金属互连上，在太阳能电池的背面形成交叉指状物和母线的金属化图案。

公开(公告)号：EP3111482A4

公开(公告)日：2017-10-25

申请号：EP15755082

申请日：2015-02-26

Applicant: SOLEXEL INC

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  SEUTTER SEAN M

IPC: H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2510550A4

公开(公告)日：2014-12-24

申请号：EP10836703

申请日：2010-12-09

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2715797A4

公开(公告)日：2015-05-27

申请号：EP12793962

申请日：2012-05-29

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  KAPUR PAWAN

IPC: H01L31/18

CPC classification number: H01L31/02363 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/268 ,  H01L21/324 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2510551A4

公开(公告)日：2014-11-26

申请号：EP10836710

申请日：2010-12-09

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2742536A4

公开(公告)日：2015-08-12

申请号：EP12822670

申请日：2012-08-09

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02327 ,  H01L31/03765 ,  H01L31/0392 ,  H01L31/049 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/075 ,  H01L31/1812 ,  H01L31/1896 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

公开(公告)号：EP2510552A4

公开(公告)日：2014-11-05

申请号：EP10836723

申请日：2010-12-09

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL ,  HARWOOD DUNCAN ,  MANSOORI MAJID ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521