公开(公告)号：JP2002033483A

公开(公告)日：2002-01-31

申请号：JP2000215928

申请日：2000-07-17

Applicant: SONY CORP

Inventor： KUNII MASABUMI

IPC: G02F1/136 ,  G02F1/1368 ,  H01L21/265 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To effectively activate impurities by an RTA method when a thin-film transistor is formed. SOLUTION: In the thin-film semiconductor device, a plurality of thin-film transistors TFTs are arranged on a substrate 0, the transistors TFTs have a laminated structure in which a gate electrode IN is arranged on one face of a semiconductor thin film 5 via a gate insulating film 3, and the transistors are arranged so as to be divided into individual element regions. When the semiconductor device is manufactured, a thin-film forming process in which the film 5 is formed in a state continued along the main face of the substrate 0, a heating process in which a required heat treatment is executed to the film 5 by a quick heating method by keeping a state that the film 5 is continued and a separation process in which the film 5 in the continued state is etched so as to be separated into the individual element regions are performed. As required, an endothermic-layer formation process in which an endothermic layer continued to a plurality of element regions is formed is performed in advance.

公开(公告)号：JP2000306859A

公开(公告)日：2000-11-02

申请号：JP11023799

申请日：1999-04-19

Applicant: SONY CORP

Inventor： KUNII MASABUMI ,  TAKATOKU MASATO ,  MANO MICHIO

IPC: H01J37/30 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To form a semiconductor thin film, having a crystallization close to that of a single crystal on a substrate having a large area with satisfactory throughput by improving a laser crystallization method. SOLUTION: In a preparation step, first the surface of a substrate 0 is divided, e.g. into in an array of a plurality of regions D defined by rows and columns, while an irradiating region R of a laser light 50 is adjusted to be a rectangular shape, so that the rectangular division region D can be irradiated in batch with the light. In a next crystallization step, the intensity of the laser light 50 is optically modulated, so that a cyclic light and dark pattern can be projected onto the region R, the first division region D in the upper left of the substrate 0 is irradiated with the modulated pattern, the identical region D is again irradiated with the pattern so as not to overlap therewith at least once by shifting the region R. Thereafter, the region R of the laser light 50 is shifted to the next region D to repeat the crystallization step. In the crystallization step, the crystallization direction is controlled based on a temperature gradient according to the pattern, and the region R is shifted slightly within crystallization range with a single irradiation to repeat the irradiation.

公开(公告)号：JPH1195251A

公开(公告)日：1999-04-09

申请号：JP25454597

申请日：1997-09-19

Applicant: SONY CORP

Inventor： KUNII MASABUMI

IPC: G02F1/136 ,  G02F1/1368 ,  G09F9/35 ,  G09G3/36

Abstract: PROBLEM TO BE SOLVED: To diminish the load capacity of a driving circuit at the time of superposition of substrates and to enable high-speed driving by forming plural pixel transistors and part of their driving circuit and the electrodes corresponding to these pixel transistors and the other part of the driving circuit respectively in the same stages. SOLUTION: The liquid crystal driving circuit has the plural pixel transistors Tr arranged in a matrix form, the plural pixel electrodes D arranged in correspondence thereto, the perpendicular driving circuit 2 for driving the pixel transistors Tr successively along the perpendicular direction by a perpendicular clock Vclk and a dither reference voltage generating circuit 3 for generating the reference voltage corresponding to pixel positions by a horizontal clock Hclk and the perpendicular clock Vclk and inputting this voltage to a comparator C in order to execute dither modulation to a video signal Vsig. The counter substrate is provided with a horizontal driving circuit 1 for successively operating the plural selection switches SW along a horizontal direction by the horizontal clock Hclk. These substrates are formed in the respective same stages and are superposed on each other.

公开(公告)号：JPH10233514A

公开(公告)日：1998-09-02

申请号：JP11615497

申请日：1997-04-18

Applicant: SONY CORP

Inventor： KUNII MASABUMI ,  IKEDA HIROYUKI

IPC: H01L29/786 ,  H01L21/336

Abstract: PROBLEM TO BE SOLVED: To ensure a long-term reliability by improving the quality of an insulating film contained in a thin-film transistor. SOLUTION: A thin-film transistor comprises a laminated structure comprising a semiconductor thin-film 5, a gate oxide film 3 so formed as to contact to the lower surface side of it, an etching stopper film 6 so formed as to contact to the upper surface side of the semiconductor thin film 5, and a gate electrode 1 positioned directly below the semiconductor thin-film 5 through the gate oxide film 3, and is formed on an insulating substrate 0 at a process temperature 600 deg.C or below. The etching stopper film 6 is so formed that the absolute value of flat band voltage representing its film quality may be substantially equal to that of the gate oxide film 3. The semiconductor thin-film 5 is made of polycrystal silicon while the gate oxide film 3 and etching stopper film 6 made of silicon dioxide. The absolute value of flat band voltage of these silicon dioxides is controlled to 2V or less.

公开(公告)号：JPH1041234A

公开(公告)日：1998-02-13

申请号：JP8872897

申请日：1997-03-24

Applicant: SONY CORP

Inventor： NOGUCHI TAKASHI ,  KANETANI YASUHIRO ,  KUNII MASABUMI ,  IKEDA YUJI ,  USUI SETSUO

IPC: H01L21/8247 ,  B81B1/00 ,  B81C1/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L27/115 ,  H01L27/12 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

Abstract: PROBLEM TO BE SOLVED: To provide a forming method of a silicon thin film which can arrange regularly silicon single crystal particle group on an insulating film, and form it easily in a short time. SOLUTION: An amorphous or polycrystalline silicon layer 13 formed on a substrate 12 is irradiated with a pulsed UV ray beam, thereby forming a silicon thin film 14 composed of silicon single crystal particle group on the substrate 12. In the above forming method of a silicon thin film, the traveling amount L of UV beam irradiation position from irradiation finish of a rectangular UV ray beam to the next irradiation start of the rectangular UV ray beam is set at most 40μm, and the ratio R (=L/W) of the traveling amount to the width W of the UV ray beam which is measured along the traveling direction is set to be 0.1-5%. Thereby a silicon thin film composed of nearly rectangular silicon single crystal particle group arranged in a lattice type on the substrate is formed. The preferred orientation to the surface of the substrate of silicon single crystal particles is almost (100).

公开(公告)号：JPH08146402A

公开(公告)日：1996-06-07

申请号：JP31414694

申请日：1994-11-24

Applicant: SONY CORP

Inventor： KADOTA HISASHI ,  NAKAMURA SHINJI ,  URAZONO TAKENOBU ,  INOUE YUKO ,  KUNII MASABUMI

IPC: G02F1/1335

Abstract: PURPOSE: To improve the reliability and workability of a light shielding mask formed in the peripheral region of an on-chip color filter structure. CONSTITUTION: This color display device has constitution holding liquid crystals 14 between a driving substrate 0 and a counter substrate 12. On the driving substrate 0, a display region 16 where electrodes 1 and pixels having thin-film transistors for driving these electrodes are arranged in a matrix form and a peripheral region 15 endosing the display region are formed. This driving substrate 0 has colored films formed across the display region 16 and the peripheral region 15. The colored films arranged in the display region 16 constitute color filters 8, 9, 10 selectively colored red, green and blue in pixel units. The colored films arranged in the peripheral region 15 constitute the light shielding mask 8a by absorbing at least a part of incident light.

公开(公告)号：JPH08124852A

公开(公告)日：1996-05-17

申请号：JP28009794

申请日：1994-10-19

Applicant: SONY CORP

Inventor： MINEGISHI MASAHIRO ,  INO MASUMITSU ,  KUNII MASABUMI ,  URAZONO TAKENOBU ,  HAYASHI HISAO

IPC: G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/02 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

Abstract: PURPOSE: To form a polycrystalline semiconductor thin film of large grain diameter through laser annealing. CONSTITUTION: Semiconductor is grown on an insulating substrate under prescribed film forming conditions in a film forming process for the formation of a precursor film 1. The precursor film 1 is a polycrystalline aggregate of microcrystal grains. The precursor film 1 is irradiated with a laser beam in an irradiation process to undergo a thermal history, whereby the precursor film 1 is enhanced in crystal grain diameter and converted into a polycrystalline semiconductor thin film 3. In a film forming process, a precursor film 1 whose crystal grain is above 3nm in diameter is formed at temperatures of 500 to 650 deg.C through a low-pressure chemical vapor growth method or a normal- pressure chemical vapor growth method. Under film forming conditions, a polycrystalline precursor film 1 substantially free from hydrogen is capable of being obtained. On the other hand, in an irradiation process, the precursor film 1 is irradiated with one shot of excimer laser pulses.

公开(公告)号：JPH0864837A

公开(公告)日：1996-03-08

申请号：JP22258894

申请日：1994-08-24

Applicant: SONY CORP

Inventor： URAZONO TAKENOBU ,  INO MASUMITSU ,  KUNII MASABUMI ,  NISHIHARA SHIZUO ,  HAYASHI HISAO

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PURPOSE: To eliminate the need of a laser antireflection film on an existing semiconductor thin film by radiating the laser beam from the rear surface side of a transparent insulating substrate. CONSTITUTION: The transparent insulating substrate 1 is irradiated with a laser beam having adequate energy from the rear side of a transparent insulating substrate 1 to crystallize a semiconductor thin film 2 and activate impurity. Since the gate electrode G is exposed in direct to the laser beam from the rear side in this processing, crystallization can be enabled. Since radiation of laser beam is performed from the rear side, the transparent insulating substrate 1 must be selected from the materials which do not absorb the laser beam. To limit the reflection at the rear side, it is preferable to determine the thickness of the transparent insulating substrate 1 in accordance with wavelength of the laser beam, which eliminates the need of a conventional antireflection coating on the semiconductor film.

公开(公告)号：JPH0722627A

公开(公告)日：1995-01-24

申请号：JP19171593

申请日：1993-07-05

Applicant: SONY CORP

Inventor： KUNII MASABUMI

IPC: G02F1/133 ,  G02F1/136 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE:To stabilize threshold voltage, restrain the irregularity of gate capacitance coupling, and shorten the manufacturing process, by restraining the leak current of a TFT which is used as a pixel switching device. CONSTITUTION:The thin film semiconductor device is composed of a plurality of thin film transistors connected in series, and has multigate structure in which gate electrodes 9 of a plurality of the thin film transistors are connected in common. The gate electrode 9 of at least one transistor out of a plurality of the thin film transistors is offset-arranged to a channel region 2, and an offset region 6 is arranged between the channel region 2 and a source region 3 or a drain region 5.

公开(公告)号：JP2009198703A

公开(公告)日：2009-09-03

申请号：JP2008039013

申请日：2008-02-20

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KUNII MASABUMI ,  ITO RYOICHI ,  IKEDA MASANOBU

IPC: G02F1/1333 ,  G02F1/1343 ,  G02F1/1368

CPC classification number: G02F1/1345 ,  G02F1/1354 ,  G02F1/1362

Abstract: PROBLEM TO BE SOLVED: To provide a liquid crystal display device capable of improving photosensitivity of a light-receiving element 32 and preventing the generation of a dark current. SOLUTION: An insulation film 60b is formed on the surface of a planar film 60a in a sensor area SA provided with the light-receiving element 32 in a pixel area PA. Therein, dry etching treatment for removing the insulation film 60b formed on the surface of the planar film 60a in the sensor area SA is not performed. COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 解决的问题：提供能够提高受光元件32的光敏性并防止产生暗电流的液晶显示装置。 解决方案：在像素区域PA中设置有光接收元件32的传感器区域SA中的平面膜60a的表面上形成绝缘膜60b。 其中，不进行用于除去形成在传感器区域SA中的平面膜60a的表面上的绝缘膜60b的干法蚀刻处理。 版权所有（C）2009，JPO＆INPIT