公开(公告)号：JP2012064920A

公开(公告)日：2012-03-29

申请号：JP2011111866

申请日：2011-05-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： FUJITA GORO ,  KURAMOTO MASARU ,  WATANABE HIDEKI ,  MIYAJIMA TAKAO

IPC: H01S5/065 ,  H01S5/026

CPC classification number: H01S5/0265 ,  B82Y20/00 ,  G11B7/0045 ,  G11B7/126 ,  G11B7/127 ,  G11B2007/00457 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0614 ,  H01S5/0658 ,  H01S5/06821 ,  H01S5/2009 ,  H01S5/22 ,  H01S5/3216 ,  H01S5/34306

Abstract: PROBLEM TO BE SOLVED: To provide a recording apparatus which can obtain a desired pulse light frequency easily using a single element based simple structure.SOLUTION: A recording apparatus 200, designed to record information on an optical recording medium 21, comprises a self-oscillating semiconductor laser 1, containing therein a supersaturated absorber unit for applying a bias voltage Vsa and a gain unit for injecting gain current, which emits laser light used for recording information to an optical recording medium 21; a reference signal generation unit 14 which, in addition to generating a master clock signal, supplies an injection signal synchronized with the master clock signal to the gain unit of the self-oscillating semiconductor laser 1; and a recording signal generation unit 13 which, while generating a recording signal based on the master clock signal, applies the recording signal as a bias voltage Vsa to the supersaturated absorber unit of the self-oscillating semiconductor laser 1.

Abstract translation: 要解决的问题：提供一种能够使用单个元件的简单结构容易地获得期望的脉冲光频率的记录装置。 解决方案：设计用于在光学记录介质21上记录信息的记录装置200包括自振荡半导体激光器1，其中包含用于施加偏置电压Vsa的过饱和吸收器单元和用于注入增益电流的增益单元 ，其将用于记录信息的激光发射到光学记录介质21; 参考信号生成单元14除了产生主时钟信号之外，还将与主时钟信号同步的注入信号提供给自激半导体激光器1的增益单元; 以及记录信号生成单元13，其在基于主时钟信号生成记录信号的同时，将记录信号作为偏置电压Vsa施加到自激振荡半导体激光器1的过饱和吸收体单元。（COPYRIGHT：（ C）2012，JPO＆INPIT

公开(公告)号：JP2012015266A

公开(公告)日：2012-01-19

申请号：JP2010149345

申请日：2010-06-30

Applicant: Sony Corp ,  Tohoku Univ ,  ソニー株式会社 ,  国立大学法人東北大学

Inventor： KURAMOTO MASARU ,  IKEDA MASAO ,  KODA RINTARO ,  OKI TOMOYUKI ,  WATANABE HIDEKI ,  MIYAJIMA TAKAO ,  YOKOYAMA HIROYUKI

IPC: H01S5/50 ,  H01S5/343

CPC classification number: H01S5/1064 ,  H01S5/0425 ,  H01S5/0602 ,  H01S5/0657 ,  H01S5/16 ,  H01S5/22 ,  H01S5/32341 ,  H01S5/34333 ,  H01S5/50

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor optical amplifier composed of a GaN-based compound semiconductor capable of achieving increased light output.SOLUTION: A semiconductor optical amplifier 200 comprises: (a) a laminate structure in which a first compound semiconductor layer composed of a GaN-based compound semiconductor, a third compound semiconductor layer, and a second compound semiconductor layer are sequentially stacked; (b) a second electrode 262 formed on the second compound semiconductor layer; and (c) a first electrode electrically connected to the first compound semiconductor layer. The laminate structure has a ridge stripe structure. When the width of the ridge stripe structure at a light-emitting end surface 203 is Wand the width of the ridge stripe structure at a light incident end surface 201 is W, W>Wis satisfied. In an inner region of the laminate structure from the light-emitting end surface 203 along an axial line AXof the semiconductor optical amplifier, a carrier non-injection region 205 is provided.

Abstract translation: 解决的问题：提供一种由能够实现增加的光输出的GaN基化合物半导体组成的半导体光放大器。 解决方案：半导体光放大器200包括：（a）层叠结构，其中由GaN基化合物半导体，第三化合物半导体层和第二化合物半导体层构成的第一化合物半导体层依次层叠; （b）形成在第二化合物半导体层上的第二电极262; 和（c）与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当发光端面203处的棱条结构的宽度为W 时，光入射端面201处的脊条结构的宽度为W 中的POS =“POST”>，满足 中的输出。 在从半导体光放大器的轴线AX 1 的发光端面203的层叠结构的内部区域中，设置载流子非注入区域205。 版权所有（C）2012，JPO＆INPIT

公开(公告)号：JP2006324331A

公开(公告)日：2006-11-30

申请号：JP2005144160

申请日：2005-05-17

Applicant: SONY CORP

Inventor： SHIOMI HARUNORI ,  OMAE AKIRA ,  AMI TAKAAKI ,  MIYAJIMA TAKAO ,  YANASHIMA KATSUNORI

IPC: H01L33/08 ,  H01L33/22 ,  H01L33/32

Abstract: PROBLEM TO BE SOLVED: To provide a light emitting diode and its manufacturing method made very high in light emission efficiency and made very less in variation in characteristics by improving the extraction efficiency of light, and sharply improving crystallinity of the whole of the nitride-based group III-V compound semiconductor layers constituting a light emitting diode. SOLUTION: After a GaN layer 12 is grown on a saphire substrate 11 subjected to irregularity processing, the GaN layer 12 is left behind only at a bottom of a recess 11a by etching back. A GaN layer 13 is grown on the recess 11a taking the GaN layer 12 as a seed crystal after passing a state where it exhibits a triangle in a cross sectional shape, taking a bottom surface of the recess as a bottom side, to embed the recess 11a. Thereafter, transversal growth is implemented from the GaN layer 13. Further, a GaN-based semiconductor layer including an active layer is grown to form a light emitting diode structure on the GaN layer 13. Using the GaN-based light emitting diode, a light emitting diode backlight or the like is manufactured. COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2005045292A

公开(公告)日：2005-02-17

申请号：JP2004327175

申请日：2004-11-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  MIYAJIMA TAKAO

IPC: H01L33/32 ,  H01L33/00

Abstract: PROBLEM TO BE SOLVED: To improve a crystal property and electrical conductivity and also uniform the composition ratio and the p-type impurity concentration in a growth surface of a crystal. SOLUTION: First layers 11 of about 1 to 100 nm in thickness formed of AlGaN mixed crystal each and second layers 12 of about 1 to 100 nm in thickness formed of Mg doped p-type GaN each are stacked alternately to stack a plurality of layers. The first layers 11 and the second layers 12 that have aluminum contents and p-type impurity concentrations different from each other are formed in separate processes to enable fabricating a satisfactory p-type group III nitride compound semiconductor that has a property of p-type AlGaN mixed crystal as a whole. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提高晶体的晶体性质和导电性，并且在晶体的生长表面中的组成比和p型杂质浓度均匀。 解决方案：由AlGaN混合晶体形成的厚度为1至100nm的第一层11和由Mg掺杂的p型GaN形成的厚度为约1至100nm的厚度为约1至100nm的第一层12交替堆叠多个 的层。 在分开的工艺中形成具有彼此不同的铝含量和p型杂质浓度的第一层11和第二层12，以便能够制造具有p型AlGaN特性的令人满意的p型III族氮化物半导体 混合晶体作为一个整体。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2001127002A

公开(公告)日：2001-05-11

申请号：JP30551999

申请日：1999-10-27

Applicant: SONY CORP

Inventor： MATSUDA OSAMU ,  IKEDA MASAO ,  MIYAJIMA TAKAO ,  WATANABE SEIICHI

IPC: H01L21/268 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To easily activate an impurity at a target of a semiconductor with a high activation rate and satisfactory uniformity. SOLUTION: At the time of activating impurity by irradiating a semiconductor, to which impurity is doped, for example, a GaN nitride 3-5 compound semiconductor to which p-type impurity such as Mg is doped, with lights, especially, laser beams. Photor energy for which the absorption coefficient of semiconductor can be set as α=1/d, where (d) is the thickness of the semiconductor whose is to be activated impurity is defined as a measured band gap Eg-real of the semiconductor, and light beams with photon energy within the range of Eg-real ±0.5 eV are used. In this case, the temperature of the substrate may be changed while the semiconductor is irradiated with the light beams. This method for activating impurity can be used for forming a p-type layer at the time of manufacturing a GaN semiconductor with laser.

公开(公告)号：JPH1072299A

公开(公告)日：1998-03-17

申请号：JP7806197

申请日：1997-03-28

Applicant: SONY CORP ,  BAIKOSUKI JAPAN KK

Inventor： MIYAJIMA TAKAO ,  YAN RU BEREGO ,  ITO TAKAYUKI

IPC: C30B23/08 ,  C30B29/38 ,  H01L21/205

Abstract: PROBLEM TO BE SOLVED: To grow a GaN-based material, especially to perform epitaxial growing of GaN with excellent matching by using a yttrium-aluminum-perovskite as a substrate material. SOLUTION: A first layer which is directly formed on a substrate consists of a compd. semiconductor material containing N and one or more elements of Al, B, Ga and In. As for the substrate, a yttrium-aluminum-perovskite material is used. By using this substrate, the objective GaN-based III-V semiconductor layer can be epitaxially grown with good matching, and therefore, the semiconductor layer has high quality with minimized crystal defects.

公开(公告)号：JPH1022494A

公开(公告)日：1998-01-23

申请号：JP19281896

申请日：1996-07-03

Applicant: SONY CORP

Inventor： MIYAJIMA TAKAO ,  TOMIOKA SATOSHI

IPC: H01L21/28 ,  H01L21/285 ,  H01L29/43 ,  H01L29/45 ,  H01L33/32 ,  H01L33/40

Abstract: PROBLEM TO BE SOLVED: To provide an ohmic electrode and its forming method which has a low contact resistivity with an n-type nitrogen III-V compound semiconductor. SOLUTION: When an ohmic electrode is formed on an n-type GaN layer 1 having a low carrier density, after forming an Al-Si alloy film or an Al/Si multi-layer film 2 on the n-type GaN layer 1, n -type layer 3 having a high carrier density is formed by diffusing Si in the Al-Si alloy film or the Al/Si multi-layer film 2 into the n-type GaN layer 1 by means of thermal processing at temperature of 500 to 600 deg.C. An Au-Si alloy film or an Au/Si multi-layer film may be used instead of the Al-Si alloy film or the Al/Si multi-layer film 2. When the ohmic electrode is formed on an n-type GaN layer having a high carrier density, after forming a Ti film, an Al film, a Pt film and an Au film in order on the n-type GaN layer, thermal processing at temperature of 700 to 1,100 deg.C is performed.

公开(公告)号：JPH03211890A

公开(公告)日：1991-09-17

申请号：JP790790

申请日：1990-01-17

Applicant: SONY CORP

Inventor： ISHIBASHI AKIRA ,  MIYAJIMA TAKAO

IPC: H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S5/30

Abstract: PURPOSE:To realize a short wavelength band semiconductor laser or a light emitting diode having excellent characteristics by introducing hydrogen into an n-type impurity-doped compound semiconductor layer. CONSTITUTION:Hydrogen is introduced into an n-type impurity-doped compound semiconductor layer 3 to nonactivate an acceptor to be formed in the layer 3 by doping the n-type impurity. Thus, the impurity doped in the layer 3 acts as a doner to obtain an n-type even in the layer 3 which was difficult to obtain the n-type by a self-compensating effect though it has a wide gap. Accordingly, an excellent pn junction can be easily formed by employing a semiconductor substrate 1 formed previously with a p-type compound semiconductor layer 2. Thus, a short wavelength band semiconductor laser or a light emitting diode having excellent characteristic can be realized.

公开(公告)号：JPH02194666A

公开(公告)日：1990-08-01

申请号：JP1446589

申请日：1989-01-24

Applicant: SONY CORP

Inventor： SUZUKI MASAYUKI ,  MORI YOSHIFUMI ,  MIYAJIMA TAKAO

IPC: H01L39/22

Abstract: PURPOSE:To enable the title element to be actuated at higher temperature by a method wherein a ferroelectric substance is impressed with an electric field while the carrier density of a superconductor near the interface with the ferroelectric substance is modulated. CONSTITUTION:A control electrode 4 is impressed with a specified voltage while a ferroelectric substance 2 is also impressed with an electric field so as to invert the direction of electric polarization thereof. Thus, a negative charge is generated on the end of the ferroelectric substance 2 on a superconductor 1 side while a hole is induced on the superconductor 1 near the interface with the ferroelectric substance 2. As a result, the marginal temperature TC on this part is raised. Accordingly, after the TC is raised, the whole element is turned into the superconductive state. Finally, electrodes 5, 6 are fed with a high current so as to turn the superconductive element into on-state.

公开(公告)号：JPH0277114A

公开(公告)日：1990-03-16

申请号：JP22953388

申请日：1988-09-13

Applicant: SONY CORP

Inventor： AKIMOTO KATSUHIRO ,  MIYAJIMA TAKAO

IPC: H01L21/205 ,  H01L21/203 ,  H01L21/365

Abstract: PURPOSE:To epitaxially grow a semiconductor layer which has low point defect density and is excellent in quality by irradiating the surface and/or its vicinity of a semiconductor substrate with an electron beam, during epitaxial growth. CONSTITUTION:A conductive GaAs substrate 2 of N-type or P-type is arranged in an MBE equipment 1 kept at a high vacuum. The GaAs substrate 2 is irradiated with molecular beams of Zn, Se and dopant generated from Knudsen cells C1, C2, C3 constituting respectively evaporation sources of Zn, Se and dopant, and ZnSe is epitaxially grown. During the epitaxial growth, the whole surface of the GaAs substrate 2 is irradiated, from the direction oblique to the surface, with an electron beam 4 generated from an electron gun 5 fixed to the MBE equipment 1, thereby growing a ZnSe epitaxial layer 5 which has low point- defect density and excellent in quality. Roughness of the surfaces of the GaAs substrate 2 and the ZnSe epitaxial layer 5, and the change of growth rate are not recognized.