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公开(公告)号：JP2006228576A
公开(公告)日：2006-08-31
申请号：JP2005041166
申请日：2005-02-17
Inventor： MORO SHUJI , AOKI TOMIO , KIMURA KAZUTO , TOMIOKA SATOSHI , MASUDA SHOZO , UEDA MITSUNORI
IPC: F21S2/00 , F21V5/00 , F21V5/04 , F21Y101/02 , G02F1/13357 , H01L33/58
Abstract: PROBLEM TO BE SOLVED: To provide a thin backlight device illuminating a liquid crystal display panel by a white light having wide color reproduction range. SOLUTION: The backlight unit is provided with a plurality of light source units 21mn (m, n are integer) composed of a plurality of light emitting diodes 21R, 21G, 21B at least emitting red colored light, green colored light and blue colored light incident on a diffusion plate 141 diffusing and emitting the colored incident light as a light source; and light condensing means 23R, 23G, 23B condensing the red colored light, green colored light and blue colored light emitted from the plurality of light emitting diodes 21R, 21G, 21B on an identical part of the diffusion plate 141, and turning the condensed light into white colored light. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：提供一种通过具有宽的色彩再现范围的白光照亮液晶显示面板的薄背光装置。 解决方案：背光单元设置有多个光源单元21mn（m，n是整数），其由至少发射红色光，绿色光和蓝色的多个发光二极管21R，21G，21B组成 入射在扩散板141上的彩色光漫射并发射着色入射光作为光源; 以及聚光装置23R，23G，23B，将从散射板141的同一部分上的多个发光二极管21R，21G，21B发射的红色光，绿色光和蓝色光聚光，并将聚光 变成白色的光。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2004253214A
公开(公告)日：2004-09-09
申请号：JP2003041177
申请日：2003-02-19
Inventor： KOSHIISHI AKIRA , NADA NAOJI , TOMIOKA SATOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic EL device that prevents short-circuit due to foreign matters between electrode-layers without complicating processes, and enhances reliability and yield.
SOLUTION: An ultraviolet-curing resin is delivered through ink-jetting on a faulty part on the surface of a transparent electrode 120 where an organic layer is to be formed, such as the presence of a foreign matter 191, and cured to form an insulation layer 140. Hence, in an organic EL element 102 having the fault, the transparent electrode 120 is separated from the organic layer 150 and a metal layer 160 through the insulation layer 140, thereby preventing short-circuit therebetween. The manufacturing process of organic EL elements have a step of irradiating the electrode layer with ultraviolet rays to shift the work function of the transparent electrode 120, and the ultraviolet-curing resin can be cured simultaneously at this step. Therefore, an additional step to form an insulation layer on a faulty part is only the step of delivering the ultraviolet-curing resin, whereby the increase in steps is suppressed to a minimum.
COPYRIGHT: (C)2004,JPO&NCIPI-
公开(公告)号：JP2002335048A
公开(公告)日：2002-11-22
申请号：JP2002045986
申请日：2002-02-22
Applicant: SONY CORP
Inventor： YAMAGUCHI KYOJI , KOBAYASHI TAKASHI , KOBAYASHI TOSHIMASA , KIJIMA SATORU , TOMIOKA SATOSHI , ANZAI SHINICHI , TOJO TAKESHI
Abstract: PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser element having a low operating voltage and good stability of the transverse mode. SOLUTION: The semiconductor laser element 10 has a structure composed of first contact layer 14, a first clad layer 16, an active layer 20, a second clad layer 24, a second contact layer 26, and a second electrode 30 laminated one above another. The second clad layer 24 is composed of an upper and lower layers 24A, 24B; the first clad layer 14, the active layer 20 and the lower layer 24A of the second clad layer have mesa structures; the upper layer 24B of the second clad layer and the second contact layer 26 have ridge structures; an insulation layer 40 is formed on a part of the lower layer 24A of the second clad layer corresponding to the top face of the mesa structure, so as to cover at least part of both sides of the upper layer 24B of the second clad layer; and a metal layer 42 having substantially the same width as that of the mesa structure is formed from the top face of the insulation layer 40 to the top face of the second electrode 30.
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公开(公告)号：JP2002314201A
公开(公告)日：2002-10-25
申请号：JP2001111291
申请日：2001-04-10
Applicant: SONY CORP
Inventor： TOMIOKA SATOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element wherein a plurality of light emitting parts made of group III-V compound semiconductor are integrat ed in monolithic way, and to provide its manufacturing method. SOLUTION: A crystal part 3A made of group III-V compound semiconductor is provided on a substrate made of sapphire. While the crystal part 3A is used as a base, semiconductor layers 10 to 30 are allowed to grow continuously in a separated part 3B in the horizontal direction. Light emitting parts 5A to 5C arranged in parallel are formed by growing three sets of group consisting of semiconductor layers 10 to 30. Even if the crystal structure of the respective semiconductor layers 10 to 30 is different from that of the adjoining semiconductor layers 10 to 30, they can be matched in lattice, and light emitting parts 5A to 5C are respectively made of different composition and have different light emitting wavelengths such as red (R), green (G), blue (B), etc. Thus, the light emitting parts 5A to 5C are integrated in monolithic way.
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公开(公告)号：JP2001313255A
公开(公告)日：2001-11-09
申请号：JP2000128325
申请日：2000-04-27
Applicant: SONY CORP
Inventor： TOMIOKA SATOSHI
Abstract: PROBLEM TO BE SOLVED: To provide a method for producing a high quality substrate in which cracking is suppressed. SOLUTION: On a sapphire growth substrate 11 of 100 μm thick or less, a substrate 12 of GaN is grown while heating the growth substrate 11 and then left as it is to be cooled. Thickness of the substrate 12 to be grown is set at 200 μm or above and the curvature of the substrate 12 caused by the difference of coefficient of thermal expansion between the growth substrate 11 and the substrate 12 is set at 0.03 cm-1 or less. Since the substrate 12 is protected against cracking even if it is left as it is after growth and warped, a high quality substrate 12 is obtained.
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Patent Agency Ranking36.发明专利
公开(公告)号：JP2001168045A
公开(公告)日：2001-06-22
申请号：JP37642299
申请日：1999-12-08
Applicant: SONY CORP
Inventor： TOMIOKA SATOSHI
IPC: H01S5/343 , C30B25/02 , H01L21/20 , H01L21/203 , H01L21/205 , H01L33/32
Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride-based III-V compound layer by which the quality of the compound layer can be improved and the manufacturing process of the layer can be simplified, and a method of manufacturing a substrate using the method. SOLUTION: A first grown layer 21 is grown on a substrate 10 for growth so that the growth rate of the layer 21 in the direction perpendicular to the growing surface may become >=10 μm/h. Then a second grown layer 22 is grown so that the growth rate in the direction perpendicular to the growing surface may become
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公开(公告)号：JP2000223417A
公开(公告)日：2000-08-11
申请号：JP1965199
申请日：1999-01-28
Applicant: SONY CORP
Inventor： TOMIOKA SATOSHI
IPC: H01L21/205
Abstract: PROBLEM TO BE SOLVED: To provide a method of growing a semiconductor, such as a nitride III-V compound semiconductor on a substrate that has a lattice constant and a thermal expansion coefficient, different from those of the semiconductor without producing warpage or fissures, and a method of manufacturing a semiconductor substrate and a semiconductor device by the use of this growing method of a semiconductor. SOLUTION: In a semiconductor growing method, where a nitride III-V compound semiconductor such as a GaN semiconductor is formed on a substrate, such as a sapphire substrate formed of a material different from that of the compound semiconductor using a growing mask, a growing mask 4 which contains at least a pattern that is threefold or sixfold symmetrical is used as the growing mask. A pattern which is threefold symmetrical is a regular triangle, and a pattern which is sixfold symmetrical is a regular hexagon. In this way, a nitride III-V compound semiconductor thick layer is selectively grown, and then the substrate is removed by lapping or the like so as to obtain only the nitride III-V compound semiconductor layer, and a semiconductor device such as a GaN semiconductor laser is manufactured using the compound semiconductor layer as a substrate.
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38.发明专利
公开(公告)号：JP2000058980A
公开(公告)日：2000-02-25
申请号：JP22887698
申请日：1998-08-13
Applicant: SONY CORP
Inventor： TOMIOKA SATOSHI , NARUI HIRONOBU , OKANO NOBUMASA
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element, wherein the crystal property is improved by suppressing the detachment of In and the long life and the stabilization of wavelength fluctuations are achieved, when a nitride- based III-V group compound semiconductor including the In is grown. SOLUTION: BxAlyGa1-x-y-zInzN is made as an active layer 7. A first optical waveguide layer corresponding to the ground layer of the active layer 7 is made as an n-type BuAlvGa1-u-vN optical waveguide layer 6. The active layer 7 is formed by mixing and growing a second raw material (TEB), including B and/or a third raw material (TMA) including Al in the first raw material (TMG, TMI and NH3) used for growing GaInN. The waveguide 6 is grown by mixing a fifth raw material (TEB), including B and/or a sixth raw material (TMA) including Al in a fourth raw material (TMG, NH3) used for the growing of GAN, when GaN is grown. Thus, the GaN-based semiconductor laser having SCH structure is formed.
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公开(公告)号：JPH10173288A
公开(公告)日：1998-06-26
申请号：JP32526096
申请日：1996-12-05
Applicant: SONY CORP
Inventor： YANASHIMA KATSUNORI , IKEDA MASAO , TOMIOKA SATOSHI
IPC: H01L21/205 , C30B25/02 , H01L21/20 , H01L21/203 , H01L33/12 , H01L33/32 , H01S5/00 , H01S5/323 , H01S3/18
Abstract: PROBLEM TO BE SOLVED: To manufacture a specific high-quality semiconductor substrate which has no rough surface nor crack, having an excellent cryetallinity with high productivity by providing a process for growing a specific semiconductor layer on a substrate at a growth rate lower than a specific growth rate and another process for growing a specific semiconductor layer on the semiconductor layer at the specific growth rate. SOLUTION: A method for growing nitride-based III-V compound semiconductor layer includes a process for growing a first Bw Alx Gay Inz N layer 2 (where, 0
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公开(公告)号：JPH1022494A
公开(公告)日：1998-01-23
申请号：JP19281896
申请日：1996-07-03
Applicant: SONY CORP
Inventor： MIYAJIMA TAKAO , TOMIOKA SATOSHI
Abstract: PROBLEM TO BE SOLVED: To provide an ohmic electrode and its forming method which has a low contact resistivity with an n-type nitrogen III-V compound semiconductor. SOLUTION: When an ohmic electrode is formed on an n-type GaN layer 1 having a low carrier density, after forming an Al-Si alloy film or an Al/Si multi-layer film 2 on the n-type GaN layer 1, n -type layer 3 having a high carrier density is formed by diffusing Si in the Al-Si alloy film or the Al/Si multi-layer film 2 into the n-type GaN layer 1 by means of thermal processing at temperature of 500 to 600 deg.C. An Au-Si alloy film or an Au/Si multi-layer film may be used instead of the Al-Si alloy film or the Al/Si multi-layer film 2. When the ohmic electrode is formed on an n-type GaN layer having a high carrier density, after forming a Ti film, an Al film, a Pt film and an Au film in order on the n-type GaN layer, thermal processing at temperature of 700 to 1,100 deg.C is performed.
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