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    MAGNETICALLY ACTUATED MICRO-ELECTRO-MECHANICAL CAPACITOR SWITCHES IN LAMINATE
    32.
    发明申请
    MAGNETICALLY ACTUATED MICRO-ELECTRO-MECHANICAL CAPACITOR SWITCHES IN LAMINATE 审中-公开
    磁性动作微电子机械电容器开关层压板

    公开(公告)号：WO2012058659A2

    公开(公告)日：2012-05-03

    申请号：PCT/US2011058492

    申请日：2011-10-29

    Applicant: UNIV CALIFORNIA ,  BACHMAN MARK ,  LI GUANN-PYNG ,  ZHANG YANG ,  WANG MINFENG ,  KIM SUNJUNG

    Inventor： BACHMAN MARK ,  LI GUANN-PYNG ,  ZHANG YANG ,  WANG MINFENG ,  KIM SUNJUNG

    IPC: H01H59/00 ,  B81B3/00

    CPC classification number: H01H50/005 ,  B81B2201/01 ,  B81B2203/0109 ,  H01G5/18 ,  H01H59/0009 ,  H01H2050/007 ,  Y10T29/49002

    Abstract: Magnetically actuated micro-electro-mechanical capacitor switches in laminate are disclosed. According to one embodiment, an apparatus comprises a first layer comprising a coil and magnetic element, the magnetic element made from one of nickel and iron; a second layer comprising a flexible member, wherein a permanent magnet is attached to the flexible member; a conductive plate having an insulating dielectric coating, the conductive plate attached to one of the flexible member or a magnet; and a third layer comprising a transmission line and magnetic material, wherein the transmission line comprises one or more of a signal conductor and one or more ground conductors in near proximity

    Abstract translation: 公开了层压板中的磁致动微电子机械电容器开关。 根据一个实施例，一种设备包括：第一层，其包括线圈和磁性元件，所述磁性元件由镍和铁中的一种制成; 包括柔性构件的第二层，其中永久磁体附接到柔性构件; 具有绝缘介电涂层的导电板，所述导电板附接到所述柔性构件或磁体中的一个; 以及包括传输线和磁性材料的第三层，其中所述传输线包括信号导体和接近导体的一个或多个接地导体中的一个或多个

    THIN CAPPING FOR MEMS DEVICES
    34.
    发明公开
    THIN CAPPING FOR MEMS DEVICES 审中-公开
    DÜNNERVERSCHLUSSFÜRMEMS-VORRICHTUNGEN

    公开(公告)号：EP3038974A1

    公开(公告)日：2016-07-06

    申请号：EP14839979.3

    申请日：2014-08-26

    Applicant: Silex Microsystems AB

    Inventor： KÄLVESTEN, Edvard ,  EBEFORS, Thorbjörn ,  SVEDIN, Niklas

    IPC: B81B7/00 ,  B81C1/00 ,  H01L21/50 ,  H01L23/48

    CPC classification number: B81B7/007 ,  B81B2201/01 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/0153 ,  B81C2201/036 ,  B81C2203/0109 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/08 ,  H01L24/94 ,  H01L2924/16235

    Abstract: The invention relates to a device comprising a base substrate(700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from said component (702). It also comprises spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via said spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) comprises vias (710) comprising metal for providing electrical connection through said capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

    Abstract translation: 一种装置包括具有附接到其上的微组件（702）的基底（700）。 适当地，它设置有用于向组件（702）传导信号和从组件（702）传出信号的路由元件（704）。 它还包括间隔件（706），其也可以用作垂直路线信号的导电结构。 存在玻璃材料的覆盖结构（708），其设置在基底基板（700）上方，优选地通过共晶接合通过间隔件（706）接合，其中封盖结构（708）包括通孔（710），包括金属 用于通过封盖结构提供电连接。 通孔可以通过加压的冲压/压制方法制成，以使玻璃软化并施加压力至玻璃中的预定深度。 然而，其他方法是可能的，例如钻孔，蚀刻，爆破。

    JUNCTIONLESS NANO-ELECTRO-MECHANICAL RESONANT TRANSISTOR
    38.
    发明申请
    JUNCTIONLESS NANO-ELECTRO-MECHANICAL RESONANT TRANSISTOR 审中-公开
    无连接的纳米电子机械谐振晶体管

    公开(公告)号：WO2013156978A3

    公开(公告)日：2014-01-23

    申请号：PCT/IB2013053113

    申请日：2013-04-19

    Applicant: ECOLE POLYTECH

    Inventor： BARTSCH SEBASTIAN THIMOTEE ,  IONESCU MIHAI ADRIAN

    IPC: H03H9/02 ,  H03H9/24

    CPC classification number: H01L41/0966 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2201/0278 ,  B82Y15/00 ,  H01H59/0009 ,  H01L41/0933 ,  H01L41/1134 ,  H03H9/02259 ,  H03H9/24 ,  H03H9/2463 ,  H03H2009/02314

    Abstract: A junctionless Nano-Electro-Mechanical (NEM) resonator, comprising a highly doped conductive channel (4) connecting a drain (9) and a source (10) electrode and movably fixed by at least two ends (11, 11') acting as said source and drain electrodes, respectively; at least one fixed gate electrode (3, 3') arranged to control a depletion charge (5) in the highly doped conductive channel (4) thereby modulating dimensions of a cross-section of the highly doped conductive channel (4). A dimension of the cross-section in the direction of an electrical field that is oriented from the fixed gate electrode (3, 3') to the highly doped conductive channel (4), is designed in such a way that it can be reduced under the effect of the depletion charge such that a full depletion in the highly doped conductive channel (4) is achievable with the control of the fixed gate electrode.

    Abstract translation: 一种无连接纳米机电（NEM）谐振器，包括连接漏极（9）和源极（10）的高度掺杂的导电沟道（4），并且可移动地固定有至少两个端部（11,11'） 分别表示源极和漏极; 至少一个固定栅电极（3,3'）布置成控制高掺杂导电沟道（4）中的耗尽电荷（5），从而调制高掺杂导电沟道（4）的横截面的尺寸。 在从固定栅极（3,3'）定向到高度掺杂的导电通道（4）的电场方向上的横截面的尺寸被设计成使得其可以在 耗尽电荷的作用使得通过固定栅电极的控制可实现高掺杂导电沟道（4）中的完全耗尽。

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