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    Mems device having a flexure with integral actuator
    31.
    发明公开
    Mems device having a flexure with integral actuator 审中-公开
    MEMS-Bauelement，eine Biegung mit积分器Aktor enthaltend

    公开(公告)号：EP1354848A2

    公开(公告)日：2003-10-22

    申请号：EP03252238.5

    申请日：2003-04-09

    Applicant: Hewlett-Packard Company

    Inventor： Ives, Thomas Wayne

    IPC: B81B3/00

    CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B3/0062 ,  B81B2201/0235 ,  B81B2201/042 ,  B81B2201/07 ,  B81B2203/053 ,  B81B2203/058

    Abstract: A micro-electro-mechanical device (110) comprises a moveable mass (112), a frame (114) for supporting the mass (112), and a flexure (10) extending between the mass (112) and the frame (114). The flexure (10) includes an integral actuator (18) for moving the mass (112) with respect to the frame (114).

    Abstract translation: 微电子机械装置（110）包括可移动质量块（112），用于支撑质量块（112）的框架（114）和在质量块（112）和框架（114）之间延伸的挠曲件（10） 。 挠曲件（10）包括用于相对于框架（114）移动质量块（112）的整体致动器（18）。

    NEMS DEVICES WITH SERIES FERROELECTRIC NEGATIVE CAPACITOR
    32.
    发明申请
    NEMS DEVICES WITH SERIES FERROELECTRIC NEGATIVE CAPACITOR 有权
    带有系列电磁负极电容器的NEMS装置

    公开(公告)号：US20160207761A1

    公开(公告)日：2016-07-21

    申请号：US14701502

    申请日：2015-04-30

    Applicant: Purdue Research Foundation

    Inventor： Muhammad Ashraful Alam ,  Muhammad Masuduzzaman ,  Ankit Jain

    IPC: B81B7/00 ,  H01L29/51 ,  H01L49/02 ,  H01L27/22 ,  H01L29/78 ,  H01L27/115

    CPC classification number: H01L29/515 ,  B81B7/02 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/07 ,  H01G4/38 ,  H01G5/16 ,  H01G5/40 ,  H01G7/06 ,  H01L27/0805 ,  H01L27/11502 ,  H01L27/11585 ,  H01L29/516 ,  H01L29/7842

    Abstract: An electrical circuit comprising at least two negative capacitance insulators connected in series, one of the two negative capacitance insulators is biased to generate a negative capacitance. One of the negative capacitance insulators may include an air-gap which is part of a nanoelectromechnical system (NEMS) device and the second negative capacitance insulator includes a ferroelectric material. Both of the negative capacitance insulators may be located between the channel and gate of a field effect transistor. The NEMS device may include a movable electrode, a dielectric and a fixed electrode and arranged so that the movable electrode is attached to at least two points and spaced apart from the dielectric and fixed electrode, and the ferroelectric capacitor is electrically connected to either of the electrodes.

    Abstract translation: 包括串联连接的至少两个负电容绝缘体的电路，两个负电容绝缘体之一被偏置以产生负电容。 负电容绝缘体中的一个可以包括作为纳米电子技术系统（NEMS）器件的一部分的气隙，并且第二负电容绝缘体包括铁电材料。 负电容绝缘体都可以位于场效应晶体管的沟道和栅极之间。 NEMS装置可以包括可动电极，电介质和固定电极，并且布置成使得可动电极附接到至少两个点并且与电介质和固定电极间隔开，并且铁电电容器电连接到 电极。

    Method for generating nano patterns upon material surfaces
    33.
    发明授权
    Method for generating nano patterns upon material surfaces 有权
    在材料表面上产生纳米图案的方法

    公开(公告)号：US08434221B2

    公开(公告)日：2013-05-07

    申请号：US12431213

    申请日：2009-04-28

    Applicant: Yeau-Ren Jeng ,  Chung-Ming Tan

    Inventor： Yeau-Ren Jeng ,  Chung-Ming Tan

    IPC: H01R9/00 ,  H05K3/00

    CPC classification number: B81C1/00031 ,  B81B2201/07 ,  B82Y10/00 ,  G11B9/149 ,  Y10T29/49147 ,  Y10T29/49151 ,  Y10T29/49155

    Abstract: The present invention discloses a method for generating nano patterns upon material surfaces. The method for generating nano patterns upon material surfaces comprises the following steps: providing a thin film capable of controlling lattice directions, applying a nanoindentation action to the thin film to generate an indentation at a specific position on the thin film. At least one hillock is then generated in a specific direction to generate a pattern and to be applied to a data storage system.

    Abstract translation: 本发明公开了一种在材料表面上产生纳米图案的方法。 在材料表面上产生纳米图案的方法包括以下步骤：提供能够控制晶格方向的薄膜，对薄膜施加纳米压痕作用以在薄膜上的特定位置产生凹陷。 然后在特定方向上产生至少一个小丘以产生模式并应用于数据存储系统。

    Nanoelectromechanical bistable cantilever device
    35.
    发明授权
    Nanoelectromechanical bistable cantilever device 有权
    纳米机电双稳悬臂装置

    公开(公告)号：US07612424B1

    公开(公告)日：2009-11-03

    申请号：US11385970

    申请日：2006-03-21

    Applicant: Horacio D. Espinosa ,  Changhong Ke

    Inventor： Horacio D. Espinosa ,  Changhong Ke

    IPC: H01L29/84 ,  H01L31/109

    CPC classification number: B81B3/0054 ,  B81B2201/038 ,  B81B2201/07 ,  B81B2201/12 ,  B81B2203/0118 ,  B82Y10/00 ,  B82Y15/00 ,  G11B9/1445 ,  G11C13/025 ,  G11C23/00 ,  H01H1/0094 ,  H01H59/0009

    Abstract: Nano-electromechanical device having an electrically conductive nano-cantilever wherein the nano-cantilever has a free end that is movable relative to an electrically conductive substrate such as an electrode of a circuit. The circuit includes a power source connected to the electrode and to the nano-cantilever for providing a pull-in or pull-out voltage therebetween to effect bending movement of the nano-cantilever relative to the electrode. Feedback control is provided for varying the voltage between the electrode and the nano-cantilever in response to the position of the cantilever relative to the electrode. The device provides two stable positions of the nano-cantilever and a hysteresis loop in the current-voltage space between the pull-in voltage and the pull-out voltage. A first stable position of the nano-cantilever is provided at sub-nanometer gap between the free end of the nano-cantilever and the electrode with a pull-in voltage applied and with a stable tunneling electrical current present in the circuit. A second stable position of the nano-cantilever is provided with a pull-out voltage between the cantilever and the electrode with little or no tunneling electrical current present in the circuit. The nano-electromechanical device can be used in a scanning probe microscope, ultrasonic wave detection sensor, NEMS switch, random access memory element, gap sensor, logic device, and a bio-sensor when the nano-cantilever is functionalized with biomolecules that interact with species present in the ambient environment be them in air or aqueous solutions. In the latest case, the NEMS needs to be integrated with a microfluidic system.

    Abstract translation: 具有导电纳米悬臂的纳米机电装置，其中纳米悬臂具有可相对于例如电路的电极的导电基底移动的自由端。 电路包括连接到电极和纳米悬臂的电源，用于在其间提供拉入或拉出电压，以实现纳米悬臂相对于电极的弯曲运动。 提供反馈控制以响应于悬臂相对于电极的位置来改变电极和纳米悬臂之间的电压。 该器件在引入电压和拉出电压之间的电流 - 电压空间中提供了纳米悬臂的两个稳定位置和滞后回路。 在纳米悬臂的自由端和电极之间的亚纳米间隙处提供纳米悬臂的第一稳定位置，其中施加了拉入电压并且在电路中存在稳定的隧道电流。 纳米悬臂的第二稳定位置在悬臂和电极之间提供拉出电压，电路中存在很少或没有隧道电流。 纳米机电装置可用于扫描探针显微镜，超声波检测传感器，NEMS开关，随机存取存储元件，间隙传感器，逻辑器件和生物传感器，当纳米悬臂用与生物分子相互作用的功能化 在环境环境中存在的物质是它们在空气或水溶液中。 在最新的情况下，NEMS需要与微流体系统集成。

    PROCESS FOR MANUFACTURING A MICROELECTROMECHANICAL INTERACTION SYSTEM FOR A STORAGE MEDIUM
    37.
    发明申请
    PROCESS FOR MANUFACTURING A MICROELECTROMECHANICAL INTERACTION SYSTEM FOR A STORAGE MEDIUM 审中-公开
    用于制造存储介质的微电子交互系统的方法

    公开(公告)号：US20080164576A1

    公开(公告)日：2008-07-10

    申请号：US11958945

    申请日：2007-12-18

    Applicant: Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

    Inventor： Giuseppe Barillaro ,  Alessandro Diligenti ,  Caterina Riva ,  Roberto Campedelli ,  Stefano Losa

    IPC: H01L21/04 ,  H01L29/06

    CPC classification number: B81C1/00539 ,  B81B2201/038 ,  B81B2201/07 ,  B81B2201/12 ,  B81B2203/0118 ,  B81B2203/019 ,  B81C1/00595 ,  B81C2201/0136 ,  B81C2203/0714 ,  H01L27/10

    Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

    Abstract translation: 一种用于制造用于存储介质的微机电类型的相互作用系统的方法，具有支撑元件的相互作用系统和由支撑元件承载的相互作用元件，其设想是提供具有基板的半导体材料晶片，其具有 第一类电导率（P）和顶面; 在所述顶表面附近的所述衬底的表面部分中形成具有与所述第一类型的导电性（P）相反的第二导电类型（N）的第一相互作用区域; 并且从顶表面开始进行基板的电化学蚀刻，所述蚀刻相对于所述第二导电类型（N）是选择性的，以便移除所述基板的表面部分并将所述第一相互作用区域与所述基板分离 ，从而形成支撑元件。

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