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    Field emission device and method for fabricating the same
    33.
    发明公开
    Field emission device and method for fabricating the same 有权
    Feldemissionsvorrichtung und Verfahren zu seiner Herstellung

    公开(公告)号：EP1115133A1

    公开(公告)日：2001-07-11

    申请号：EP01300052.6

    申请日：2001-01-04

    Applicant: Samsung SDI Co., Ltd.

    Inventor： Choi, Jun-hee ,  Cha, Seung-nam ,  Lee, Hang-woo

    IPC: H01J1/30 ,  H01J9/02

    CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30407 ,  H01J2201/30446

    Abstract: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features. Due to the micro-tips as a collection of a large number of nano-tips, the FED is operable at low gate turn-on voltages with high emission current densities, thereby lowering power consumption.

    Abstract translation: 提供场发射器件（FED）和制造FED的方法。 FED包括具有纳米尺寸表面特征的微型尖端。 由于微尖作为大量纳米尖端的集合，FED可以在具有高发射电流密度的低栅极导通电压下工作，从而降低功耗。

    Method and system for manufacturing field emission display
    37.
    发明专利
    Method and system for manufacturing field emission display 有权

    公开(公告)号：JP2004241368A

    公开(公告)日：2004-08-26

    申请号：JP2003166800

    申请日：2003-06-11

    Applicant: Sharp Corp ,  シャープ株式会社

    Inventor： NAGASAKA YUKIKO ,  KITAMURA KAZUYA ,  TAMURA HISAHIRO

    IPC: H01J9/02 ,  H01J29/04 ,  H01J31/12

    CPC classification number: B82Y10/00 ,  H01J9/025 ,  H01J2201/30407 ,  H01J2201/30469

    Abstract: PROBLEM TO BE SOLVED: To provide a method and system for manufacturing a field emission display, in which a regularly arranged sharp emitter is manufactured with high precision and a high level of productivity without need of complicated manufacturing steps and complicated optical systems. SOLUTION: The method and system comprises a first step for forming a conductive film 16 for forming a cathode electrode on a glass substrate 15 as a base plate, a second step for applying a positive resist 17 as a photosensitive material on the conductive film 16, a third step for exposing the resist to form an opening 20 corresponding to the shape of the emitter 22 by applying the light from a light source as a parallel light having a homogeneous light intensity distribution into a micro lens array 18 and converging the applied light into the positive resist 17 with the micro lens array 18, and a fourth step for forming an emitter 22 in each opening 20. COPYRIGHT: (C)2004,JPO&NCIPI

    Thermionic-enhanced field emission electron source composed of transition metal carbide material with sharp emitter end-form
    40.
    发明授权
    Thermionic-enhanced field emission electron source composed of transition metal carbide material with sharp emitter end-form 有权

    公开(公告)号：US10083812B1

    公开(公告)日：2018-09-25

    申请号：US15359436

    申请日：2016-11-22

    Applicant: Applied Physics Technologies, Inc.

    Inventor： William A. Mackie ,  Gerald G. Magera ,  Joshua M. Lovell

    IPC: H01J1/304 ,  H01J9/02

    CPC classification number: H01J1/3044 ,  H01J9/025 ,  H01J2201/30407 ,  H01J2201/30484 ,  H01J2209/0223

    Abstract: An electron source emitter is made from transition metal carbide materials, including hafnium carbide (HfC), zirconium carbide (ZrC), titanium carbide (TiC), vanadium carbide (VC), niobium carbide (NbC), and tantalum carbide (TaC), which are of high refractory nature. Preferential evaporating and subsequent development of different crystallographic planes of the transition metal carbide emitter having initially at its apex a small radius (50 nm-300 nm) develop over time an on-axis, sharp end-form or tip that is uniformly accentuated circumferentially to an extreme angular form and persists over time. An emitter manufactured to the (110) crystallographic plane and operating at high electron beam current and high temperature for about 20 hours to 40 hours results in the (110) plane, while initially not a high emission crystallographic orientation, developing into a very high field emission orientation because of the geometrical change. This geometrical change allows for a very high electric field and hence high on-axis electron emission.

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