Abstract:
L'invention concerne un tube électronique sous vide comprenant au moins une cathode (C) émissive d'électrons et au moins une anode (A) disposées dans une enceinte à vide (E), la cathode présentant une structure planaire comprenant un substrat (Sb) comprenant un matériau conducteur, une pluralité d'éléments nanotube ou nanofil (NT) isolés électriquement du substrat, l'axe longitudinal desdits éléments nanotube ou nanofil étant sensiblement parallèle au plan du substrat, et au moins un premier connecteur (CE1) relié électriquement à au moins un éléments nanotube ou nanofil de manière à pouvoir appliquer à l'élément nanofil ou nanotube un premier potentiel électrique (V1).
Abstract:
An electron beam apparatus is provided having an electron emitting device which has a simple configuration, exhibits high electron emission efficiency, operates stably, and in which emitted electrons are effectively converged. The electron beam apparatus includes: an insulator having a notch on its surface; a gate positioned on the surface of the insulator; at least one cathode having a protruding portion protruding from an edge of the notch toward the gate, and positioned on the surface of the insulator so that the protruding portion is opposed to the gate; and an anode arranged to be opposed to the protruding portion via the gate, wherein the gate is formed on the surface of the insulator so that at least a part of a region opposed to the cathode is projected outward and recessed portions are provided in which ends of the gate are recessed and interpose the projected region.
Abstract:
The invention concerns a field-emission cathode made of an electrically conducting material and having the shape of a narrow rod or a knife edge to ensure a high magnification of the electric field strength. The field-emission cathode is characterized in that at least part of the electron-emitting zone of the cathode includes preferably cylindrical host molecules and/or compounds with other host molecules and/or cylindrical atom networks, optionally with end-caps with a diameter in the nanometer range.
Abstract:
A field emission device (100) including a substrate (130), an emitter layer (106), a spacer layer (104) and a gate layer (102). In one preferred embodiment, the emitter layer (106) is made of a resistive material, and has a side end (120) that has an edge (122). The spacer layer (104) is on and over only a portion of the emitter layer (106) to expose the edge (122). The gate layer (102), on the spacer layer (104), also has a side end (128) that is tapered to form a wedge (129) with an edge. In one application, the device (100) is used in a flat panel display (90), with a screen (124). The screen (124) is at a selected positive voltage and is positioned above the gate layer (102). When a selected potential difference is applied between the emitter layer (106) and the gate layer (102), an electron-extraction field is established between the edge (132) of the gate layer (102) and the edge (122) of the emitter layer (106) to extract electrons from the edge (122) of the emitter layer (106). Then, the electrons are attracted to the screen (124). The wedge (129) reduces the amount of electrons collected at the gate and increases the efficiency of the device. The resistive nature of the emitter layer (106) enhances the uniformity of the electrons emitted along the edge (122) of the emitter layer (106).
Abstract:
PROBLEM TO BE SOLVED: To provide an electron-emitting element with a simple configuration, achieving high attainment efficiency of electrons to an anode. SOLUTION: The electron-emitting element includes an insulating member 3 and a gate 5 that are laminated on a substrate 1. A cathode 6 is disposed on a side surface of the insulating member 3. The cathode 6 has a plurality of protrusions 16 provided along a corner 32 of the insulating member 3. The gate 5 has a plurality of protrusions 15 extending toward the cathode side. COPYRIGHT: (C)2011,JPO&INPIT
Abstract:
L'invention concerne un tube électronique sous vide comprenant au moins une cathode (C) émissive d'électrons et au moins une anode (A) disposées dans une enceinte à vide (E), la cathode présentant une structure planaire comprenant un substrat (Sb) comprenant un matériau conducteur, une pluralité d'éléments nanotube ou nanofil (NT) isolés électriquement du substrat, l'axe longitudinal desdits éléments nanotube ou nanofil étant sensiblement parallèle au plan du substrat, et au moins un premier connecteur (CE1) relié électriquement à au moins un éléments nanotube ou nanofil de manière à pouvoir appliquer à l'élément nanofil ou nanotube un premier potentiel électrique (V1).
Abstract:
The following method is provided: a method of readily fabricating an electron-emitting device (10), coated with a low-work function material, having good electron-emitting properties with high reproducibility. Differences in electron-emitting properties between electron-emitting devices each fabricated by the method are reduced. Before a structure (3) is coated with the low-work function material, a metal oxide layer (4) is formed on the structure (3).
Abstract:
A cold cathode field emission device comprising an electron emission layer (14), an insulating layer (13) and a gate electrode (12) which are laminated one on another with the insulating layer (13) positioned between the gate electrode (12) and the electron emission layer (14), and further comprising an opening portion (17) which penetrates through at least the insulating layer (13) and the electron emission layer (14), the electron emission layer (14) having an edge portion (14A) for emitting electrons, the edge portion (14A) being projected on a wall surface of the opening portion (17), and the electron emission layer (14) being connected to a power source through a resistance layer (23).