Electron beam apparatus and image displaying apparatus using the same
    32.
    发明公开
    Electron beam apparatus and image displaying apparatus using the same 审中-公开
    Elektronenstrahlvorrichtung und Bildanzeigevorrichtung damit

    公开(公告)号:EP2219200A2

    公开(公告)日:2010-08-18

    申请号:EP10152999.8

    申请日:2010-02-09

    Abstract: An electron beam apparatus is provided having an electron emitting device which has a simple configuration, exhibits high electron emission efficiency, operates stably, and in which emitted electrons are effectively converged. The electron beam apparatus includes: an insulator having a notch on its surface; a gate positioned on the surface of the insulator; at least one cathode having a protruding portion protruding from an edge of the notch toward the gate, and positioned on the surface of the insulator so that the protruding portion is opposed to the gate; and an anode arranged to be opposed to the protruding portion via the gate, wherein the gate is formed on the surface of the insulator so that at least a part of a region opposed to the cathode is projected outward and recessed portions are provided in which ends of the gate are recessed and interpose the projected region.

    Abstract translation: 电子束装置具有电子发射装置,其结构简单,电子发射效率高,运行稳定,发射电子有效地会聚。 电子束装置包括:在其表面上具有凹口的绝缘体; 位于绝缘体表面上的门; 至少一个阴极,其具有从所述凹口的边缘向所述栅极突出的突出部分,并且位于所述绝缘体的所述表面上,使得所述突出部分与所述栅极相对; 以及经由所述栅极与所述突出部相对的阳极,其中,所述栅极形成在所述绝缘体的表面上,使得与阴极相对的区域的至少一部分向外突出,并且设置有凹部 的栅极凹进并插入投影区域。

    Field emitter for flat panel display
    34.
    发明公开
    Field emitter for flat panel display 失效
    场发射器阵列,用于平板显示装置

    公开(公告)号:EP0739022A3

    公开(公告)日:1997-01-22

    申请号:EP96302621.6

    申请日:1996-04-15

    Inventor: Kue, Huel-Pel

    CPC classification number: H01J3/022 H01J2201/30423 H01J2201/319

    Abstract: A field emission device (100) including a substrate (130), an emitter layer (106), a spacer layer (104) and a gate layer (102). In one preferred embodiment, the emitter layer (106) is made of a resistive material, and has a side end (120) that has an edge (122). The spacer layer (104) is on and over only a portion of the emitter layer (106) to expose the edge (122). The gate layer (102), on the spacer layer (104), also has a side end (128) that is tapered to form a wedge (129) with an edge. In one application, the device (100) is used in a flat panel display (90), with a screen (124). The screen (124) is at a selected positive voltage and is positioned above the gate layer (102). When a selected potential difference is applied between the emitter layer (106) and the gate layer (102), an electron-extraction field is established between the edge (132) of the gate layer (102) and the edge (122) of the emitter layer (106) to extract electrons from the edge (122) of the emitter layer (106). Then, the electrons are attracted to the screen (124). The wedge (129) reduces the amount of electrons collected at the gate and increases the efficiency of the device. The resistive nature of the emitter layer (106) enhances the uniformity of the electrons emitted along the edge (122) of the emitter layer (106).

    제한된 전자 필드 방출 소자 및 제작 공정
    35.
    发明公开
    제한된 전자 필드 방출 소자 및 제작 공정 无效
    有限的电子场致发射器件和制造工艺

    公开(公告)号:KR1020010032876A

    公开(公告)日:2001-04-25

    申请号:KR1020007006206

    申请日:1999-02-06

    CPC classification number: H01J9/025 H01J3/022 H01J2201/30423

    Abstract: 횡방향방출기전계방출소자(10)는소자(10)의다른요소를포함하는진공또는기체충만마이크로챔버환경(20)으로부터절연층(80)에의해분리되는게이트(60)를가진다. 예를들어, 게이트(60)는마이크로챔버(20) 외부에배치될수 있다. 횡방향방출기(40, 100)로부터방출되는전자에대한게이트까지진공또는기체충만경로가없도록절연층(80)이배치된다. 방사기와게이트사이에배치되는절연층(70, 80)은 1 이상의유전율을가지는물질로이루어지는것이선호된다. 절연층은전자에너지의소자작동범위에대해낮은제 2 전자일드를가지는것이또한선호된다. 디스플레이장치에서, 절연층은투과성인것이선호된다. 방출된전자는방출기(100)를포함하는마이크로챔버(20)에제한된다. 그러므로, 방출기전류의게이트전류성분은변위전류만으로이루어진다. 변위전류는예를들어방출기와같은다른요소에대한게이트전위의변화결과이다. 방출기로부터게이트까지의직접적인전자흐름이방지된다. 소자의어레이는마이크로챔버의어레이로이루어져서, 방출기(100) 각각으로부터의전자흐름이동일마이크로챔버의양극(50, 55)에만도달할수 있다(게이트전극(60)이없는다이오드소자의경우에조차). 소자와이러한소자의어레이를제작하기위해제작공정(S1-S28)이특별히고안되었다.

    TUBE ELECTRONIQUE SOUS VIDE A CATHODE PLANAIRE A BASE DE NANOTUBES OU NANOFILS
    38.
    发明公开
    TUBE ELECTRONIQUE SOUS VIDE A CATHODE PLANAIRE A BASE DE NANOTUBES OU NANOFILS 审中-公开
    基于纳米管或纳米线的平面阴极真空电子管

    公开(公告)号:EP3267463A3

    公开(公告)日:2018-04-04

    申请号:EP17178583.5

    申请日:2017-06-29

    Applicant: Thales

    Abstract: L'invention concerne un tube électronique sous vide comprenant au moins une cathode (C) émissive d'électrons et au moins une anode (A) disposées dans une enceinte à vide (E), la cathode présentant une structure planaire comprenant un substrat (Sb) comprenant un matériau conducteur, une pluralité d'éléments nanotube ou nanofil (NT) isolés électriquement du substrat, l'axe longitudinal desdits éléments nanotube ou nanofil étant sensiblement parallèle au plan du substrat, et au moins un premier connecteur (CE1) relié électriquement à au moins un éléments nanotube ou nanofil de manière à pouvoir appliquer à l'élément nanofil ou nanotube un premier potentiel électrique (V1).

    Abstract translation: 本发明涉及一种真空电子管,其包括布置在真空室(E)中的至少一个发射电子的阴极(C)和至少一个阳极(A),所述阴极具有平面结构,所述平面结构包括衬底 ),其包括导电材料,多个纳米管或纳米线元件(NT)与衬底电隔离的,的纵向轴线,所述纳米管或纳米线构件基本上平行于基板平面,以及至少一个第一连接器(CE1)电连接 至少一个纳米管或纳米线元件,以便能够将纳米线或纳米管元件施加第一电势(V1)。

    Cold cathode field emission device and cold cathode field emission display
    40.
    发明公开
    Cold cathode field emission device and cold cathode field emission display 审中-公开
    冷阴极场发射器和显示装置具有这样的发射器

    公开(公告)号:EP0974998A3

    公开(公告)日:2003-01-29

    申请号:EP99401872.9

    申请日:1999-07-23

    CPC classification number: H01J3/022 H01J29/467 H01J2201/30423 H01J2329/00

    Abstract: A cold cathode field emission device comprising an electron emission layer (14), an insulating layer (13) and a gate electrode (12) which are laminated one on another with the insulating layer (13) positioned between the gate electrode (12) and the electron emission layer (14), and further comprising an opening portion (17) which penetrates through at least the insulating layer (13) and the electron emission layer (14), the electron emission layer (14) having an edge portion (14A) for emitting electrons, the edge portion (14A) being projected on a wall surface of the opening portion (17), and the electron emission layer (14) being connected to a power source through a resistance layer (23).

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