Abstract:
First, there are prepared a semiconductor chip with a group of solder bumps disposed on and joined to a surface thereof in a predetermined pattern, and a multilayer plate including a second layer as an electrically conductive layer and first and third layers disposed on respective opposite surfaces of the second layer and comprising metal layers of one metal. Then, the first layer and the third layer of the multilayer plate are etched in a predetermined pattern to form a first group of posts and a second group of posts which have a pattern identical to the pattern of the group of solder bumps. Then, semiconductor chip is positioned to hold the solder bumps in contact with the posts of the first group, and the solder bumps are melted to join the solder bumps to the posts of the first group. Thereafter, the second layer is cut between the posts of the first and second groups, producing separate multilayer posts.
Abstract:
Within a method for forming a solder interconnection structure for use within a microelectronic fabrication, there is first provided a substrate having formed thereover a bond pad. There is then formed upon the bond pad a first solder interconnection layer. There is then formed over the first solder interconnection layer an annular solder non-wettable copper oxide layer which does not cover an upper dome portion of the first solder interconnection layer. There is then formed over the upper dome portion of the first solder interconnection layer and not upon the annular solder non-wettable copper oxide layer a second solder interconnection layer.
Abstract:
A solder preform is provided for forming interconnections between multilayer ceramic substrates comprising an upper layer and lower layer of solder separated by an intermediate layer of a material which is wettable by solder and which does not melt at the temperatures used to reflow the solder and form the connections. The solder preform is used to join the substrates and is particularly useful to simultaneously electrically interconnect the substrates and to form a hermetic seal between the substrates being joined.
Abstract:
A connection structure between lead frames and a base plate of aluminum nitride, to be applied as a connection structure between components of a semiconductor apparatus, has a base plate made of a sintered body of aluminum nitride on which a semiconductor device is to be mounted. The lead frames are made of iron alloy containing nickel in 29 wt. % and cobalt in 17 wt. %. A silver solder is used for joining the base plate and the lead frames. A surface of the lead frame to be joined to the base plate is clad with a stress relief layer of oxygen-free copper of a high plastic deformability to relieve, by its plastic deformation, a thermal stress caused by a difference between a thermal expansion coefficient of the aluminum nitride base plate and that of the lead frame in a cooling process at the time of soldering. Preferably, only a portion of each lead frame to be joined to the base plate comprises an inner layer of an iron alloy containing 29 wt. % of nickel and 17 wt. % of cobalt, and an outer layer portion of oxygen-free copper.
Abstract:
A wireless headset includes a housing and a power system disposed in a cavity enclosed by the housing and configured to supply power to the wireless headset. The wireless headset further includes a first electrical connector and a second electrical connector disposed on the housing of the wireless headset and are respectively electrically connected to two electrodes of the power system. The housing includes a rod body and an earbud connected to a top of the rod body, wherein the first electrical connector is located at a bottom end of the rod body, and the second electrical connector is located on an outer side wall of the earbud.
Abstract:
Disclosed herein is substrate for flip chip bonding, in which a base solder layer is formed between a pad and a metal post, thereby increasing impact resistance and mounting reliability. A method of fabricating the substrate for flip chip bonding is also provided.
Abstract:
A method for forming a frame attachment interconnect between a substrate and a frame is disclosed. The method can include applying a composite material (e.g., epoxy-glass prepreg) to a surface of a substrate. The composite material can have one or more holes disposed to substantially align with a corresponding pad on the surface of the substrate. A metal disc is placed in each hole of the composite material on top of the corresponding pad. A frame member can be placed on top of the composite material and the metal discs. The frame member can have one or more pads disposed to substantially align with the metal discs. The substrate, composite material, metal discs and frame combination can be cured in a controlled atmosphere that can include a vacuum and a predetermined temperature to create discrete electrical connections between adjacent pads but with each encapsulated and electrically isolated.
Abstract:
A head assembly for writing or reading information to or from a recording medium. The head assembly includes a suspension having an electrode pad; a mounting member placed on the suspension; a head mounted on the mounting member and having an electrode, for writing or reading information; and a first bonding member made of a hot-melt adhesive and fixing the electrode to the electrode pad.
Abstract:
Disclosed is a laminated (or non-laminated) conductive interconnection for joining an integrated circuit device to a device carrier, where the conductive interconnection comprises alternating metal layers and polymer layers. In addition, the polymer can include dendrites, metal projections from the carrier or device, and/or micelle brushes on the outer portion of the polymer. The polymer layers include metal particles and the alternating metal layers and polymer layers form either a cube-shaped structure or a cylinder-shaped structure.