CHANNEL STRUCTURE OF INVERSE LINK INCLUDING BURST PILOT

    公开(公告)号:JPH0918448A

    公开(公告)日:1997-01-17

    申请号:JP10295496

    申请日:1996-04-24

    Abstract: PROBLEM TO BE SOLVED: To exclusive the concentration of burden on a base station by performing the coherent demodulation of a backward link with simple constitution and to increase channel capacity by sending out a burst pilot to a prescribed time slot from each mobile station in a wideband CDMA mobile communication system. SOLUTION: In the backward link, a traffic signal is outputted by applying QPSK modulation to I and Q signals by prescribed processing. While, burst pilot processing is applied to a pilot channel, and it is transmitted to the backward link in a form of burst pilot as a pilot symbol. At this time, the width of the burst pilot 70 is adjusted to appropriate width required for sampling, and the burst pilot is excluded to be concentrated on the base station by providing the offsets 72 with different slots in each mobile station and setting different time slots sent from the burst pilot in each mobile station, then, mutual interference between the pilots is excluded.

    MANUFACTURE OF HEATER-BURIED PLANE WAVEGUIDE-TYPE OPTICAL SWITCH

    公开(公告)号:JPH08328049A

    公开(公告)日:1996-12-13

    申请号:JP31295095

    申请日:1995-11-30

    Abstract: PROBLEM TO BE SOLVED: To provide such a manufacturing method of a heater-embedded planar channel waveguided type optical switch as being capable of restraining the transmission of heat generated in thin film heaters to neighboring channel waveguide to prevent leakage present situation between neighboring channel waveguide and increasing a heat transmission speed to increase a switching speed for operation with low operating power. SOLUTION: On a lower clad layer 13 in which channel waveguide 17a, 17b are formed, a first upper clad layer 19 is formed flat which is 5-10μm thick on the channel waveguide 17a, 17b. In areas corresponding to the channel waveguide 17a, 17b on the first upper clad layer, thin film heaters 21a, 21b are formed which has line widths as about twice as the line widths of the channel waveguide 17a, 17b. Then, on the first upper clad layer 19 and the thin film heaters 21a, 21b, a second upper clad layer 23 is formed which has 15-20μm thick. For the early heat radiation of the thin film heaters 21a, 21b, the second upper clad layer 23 is removed to expose the thin film heaters 21a, 21b.

    CONTROL METHOD OF JOINT OPERATION BETWEEN TERMINAL APPARATUSED POSESSING INPUT INPUT INFORMATION IN COMMON

    公开(公告)号:JPH08278946A

    公开(公告)日:1996-10-22

    申请号:JP33383195

    申请日:1995-12-21

    Abstract: PROBLEM TO BE SOLVED: To control the cooperation between terminals using input information in common to correct same data by using the terminals located at different positions and connected by an optional method. SOLUTION: Let a terminal requesting cooperation be a terminal X and let other terminal to serve the cooperation be a terminal Y, then the terminals X, Y use an application software having already been developed such as a document editer. A software to control input data controls input data for the cooperation as the software configuring the cooperation job environment. When the terminal X requests the cooperation, input data from its own input device to the terminal connecting to an input data control section. The input data control section processes the input data entered from its own input device. The terminal Y shuts off information from its own input device and processes the information received from the input device of the terminal requesting the cooperation as if the information were entered from its own input device.

    INFORMATION CHARGE DISCOUNT RATE PROCESSING METHOD OF INFORMATION CHARGE STORAGE AGENT SERVICE ACCORDING TO SERVICE SUBSCRIBER

    公开(公告)号:JPH08237246A

    公开(公告)日:1996-09-13

    申请号:JP33240895

    申请日:1995-12-20

    Abstract: PROBLEM TO BE SOLVED: To apply a specified information fee discount rate by every subscriber of the service to a user of the service by registering information fee discount rate data by every subscriber of the service and calculating the information fee discount rate according to the utilized data. SOLUTION: The data required for an information fee discount rate processing is inputted by the subscriber of the service through a terminal 20 and the subscriber of the service is registered by storing the data in a database. When the number of the subscriber of the service and a call number are received through a common line signal network 23, the database 25 of the corresponding subscriber of the service is retrieved by defining the number of the subscriber of the service as an index value, if the corresponding data exists, classification of service functions of a main table is read and a fact whether the subscriber is subscribed to the rate changing service by the date and time is judged. When the subscriber is subscribed to the service, time and date classification is read by the main table, the information fee discount rate on a specified day and the information fee on a specified day of the week, etc., are calculated according to the time and date classification and the information discount rate calculated by a service exchange 22, information fee class and an incoming call number are transmitted.

    PREPARATION OF BIPOLAR TRANSISTOR
    45.
    发明专利

    公开(公告)号:JPH08186124A

    公开(公告)日:1996-07-16

    申请号:JP31536394

    申请日:1994-12-19

    Abstract: PURPOSE: To enhance integration of an element while simplifying the process by forming the base at an etched part of an insulation film through the use of an SEG step, forming a side wall film defining an emitter region on the side face of a nitride film, forming a conductive emitter layer in the emitter region thus defined and then interconnecting the electrodes. CONSTITUTION: Integration of element is enhanced through the use of a step for making a shallow trench and the number of trenches is decreased by thermally oxidizing the collector region 23 on the outside of an active region such that the collector region 23 has a depth similar to that of the shallow trench. Unnecessary regions are then removed from an isolation film and an insulation film defining the active region thus reducing the size of element and the parasitic capacitance between the subcollector and the board. Since the thickness of insulation film can be adjusted arbitrarily to the order of the thickness of shallow trench, parasitic capacitance of metal interconnection can be decreased. Furthermore, the process is simplified by eliminating the trench isolation step and the SEG step for growing interconnect polisilicon arsenide while self-aligning the emitter, base and collector.

    ATM MULTICHANNEL SWITCH HAVING GROUPING/TRAP/ROUTING STRUCTURE

    公开(公告)号:JPH08172441A

    公开(公告)日:1996-07-02

    申请号:JP12864395

    申请日:1995-05-26

    Abstract: PURPOSE: To allow the channel switch to accommodate even a service at a super transmission rate by feeding back grouped cells to an input processing means when the cells make a switching request in excess of a channel capacity. CONSTITUTION: An input processing 21 conducts read control of cells received externally, synchronization adjustment between the externally received cells and cells blocked and fed back by a trap section 23, and transmission control of switching control data to a channel grouping section 22. The grouping section 22 outputs input cells in a same group among received switch control data to consecutive output ports for grouping. The track section 23 discriminates whether or not the grouped cells make a switching request in excess of a concerned channel capacity and feeds back the cells making a switching request in excess of a concerned channel capacity to the input processing section 21 so that the cells are received by the switch simultaneously with cells received externally at a succeeding cell time.

    FILM-MODE VIDEO SIGNAL DETECTOR
    47.
    发明专利

    公开(公告)号:JPH08167033A

    公开(公告)日:1996-06-25

    申请号:JP4214895

    申请日:1995-03-01

    Abstract: PURPOSE: To encode an image signal by means of 24Hz frame rate when the video signal is converted from a video film. CONSTITUTION: A condition generating part 20 judges whether or not a film mode is the one where a still image is considered by an average absolute difference value through the use of a film mode condition generating signal from a video signal detecting part 10. A mode converting part 30 outputs a film mode despatch signal considering scene conversion at the time of scene conversion. Then, a video mode judging part 40 operates a counter by utilizing a clock signal which is generated at the time of a film mode condition generated from the video signal detecting part 10. Then, the videomode judging part 40 compares the output value of the counter with an optional threshold value which is set by an operator so that the film mode is recognized when the counter output value is largher than the threshold value.

    WAVELENGTH-DIVIDING INVERSE MULTIPLEXED ELEMENT AND SYSTEM USING WAVELENGTH-DIVIDING INVERSE MULTIPLEXED ELEMENT

    公开(公告)号:JPH08166607A

    公开(公告)日:1996-06-25

    申请号:JP30931294

    申请日:1994-12-13

    Abstract: PURPOSE: To provide a wavelength-division reverse multiplexing element expectable as giving high polarization rotating efficiency under the reduction of an energy loss, and capable of narrowing the peak line width of a reflected beam. CONSTITUTION: This reverse multiplexing element is structured to include the first mirror layer 20 used as a lower mirror layer formed on a substrate, with a medium having a small refraction factor and a medium having a large refraction factor alternately stacked, the second mirror layer 40 used as an upper mirror layer, with a medium having a large refraction factor and a medium having a small refraction factor alternately stacked, and an intermediate layer 30 made of a Kerr medium formed between the first mirror layer 20 and the second mirror layer 40. Also, the first mirror layer 20 is formed to have a relatively large refraction factor for the second mirror layer 40.

    GROWTH METHOD OF TWO-DIMENSIONAL THIN FILM OF III-V COMPOUNDSEMICONDUCTOR

    公开(公告)号:JPH08162411A

    公开(公告)日:1996-06-21

    申请号:JP29719694

    申请日:1994-11-30

    Abstract: PURPOSE: To grow a comb-shaped thin-film having no defect by inserting a multilayer of a metallic binary field between two thin-films of a different kind having mutually greatly different lattice constants. CONSTITUTION: An MOCVD device is supplied with Ga gas and As gas, a GaAs buffer layer 2 of the same kind is grown on a GaAs substrate 1. A raw material gas containing a group III element (In or Ga) is injected, a raw material gas containing a group V element (As) is injected, and the thin layer 3 of a binary field containing the group III elements (In, Ga) and having a metallic component in high concentration is grown. In and Ga mixed at a fixed ratio are injected, and an InGaAs thin layer 4 is grown. Accordingly, when the InGaAs thin layer 4 is formed, dislocation is generated mainly along the interface of the lower section of the metallic thin layer 3, and dislocations due to the lattice mismatching is minimized, and the InGaAs thin-film having a comb-shaped surface and having no defect is obtained.

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