Abstract:
A method of fabricating transparent gate electrode for field effect transistor using carbon nanotube and a field effect transistor fabricated by the same are provided to form a uniform carbon nanotube thin film by using a chemical treatment using a acid solution. Provided is the carbon nanotube aqueous solution which is functional as the carboxyl group(-COOH) through the chemical treatment. The carbon nanotube is dipped into the mixture of a nitric acid and sulfuric acid for predetermined time by using a sonicator. The volume ratio of the nitric acid and sulfuric acid is 4:1. The polymer substrate(20) is processed and the surface of the membranous polymers substrate is functional as the amine radical. To form the carbon nanotube thin film for a gate electrode on the membranous polymers substrate, the polymer substrate which is functional as the amine radical is put into the carbon nanotube aqueous solution for a predetermined time. The membranous polymers substrate is PES(Polyethylenesulfonate).
Abstract:
A manufacturing method of a gas sensor for mixed gas detection to produce various types of sensors at low price, a gas sensor for mixed gas detection to facilitate mechanism analysis of a cross junction sensor, and a mixed gas detecting method to achieve exact qualitative and quantitative analysis for mixed gas are provided. A manufacturing method of a gas sensor for mixed gas detection includes a step of forming the respective intaglio pattern on a plurality of master templates, a step of pouring and curing liquid polymer on the master template and manufacturing high polymer stamps with a raised pattern corresponding to the intaglio pattern, a step of forming a gas detection material pattern successively on a substrate by using the microcontact printing technology after staining different gas detection materials on the surface of the high polymer stamps and a step of forming a contact resistance decreasing material pattern at the cross point of different gas detection material patterns.
Abstract:
그래핀을 이용해 휘어짐이나 늘임 가능한 수퍼커패시터 및 그 제조 방법을 제공한다. 본 발명에 따른 수퍼커패시터는 휘어짐이나 늘임 가능한 기판; 상기 기판 위에 형성된 전극; 및 전해질을 포함하고, 상기 전극은 표면에 탄소기반 물질, 산화금속 및 전도성 고분자 중 적어도 어느 하나가 혼성화된 증착 그래핀 패턴으로 이루어진다. 본 발명에 따르면, 전고체상이면서 휘어짐이나 늘임 가능한 수퍼커패시터로 제조할 수 있고, 수퍼커패시터의 비표면적당 축전용량을 증가시킬 수 있다.
Abstract:
본 발명은 3차원 스트레쳐블 전자소자 및 이의 제조방법에 관한 것으로, 상기 3차원 스트레쳐블 전자소자는 연결선을 내부에 위치시켜 외부로부터 연결선을 보호할 수 있으며, 액체 금속을 연결선으로 사용하여 스트레칭시 연결선의 부피 변화가 발생하지 않으며, 소자를 기판의 양면에 전이할 수 있어 집적도를 증가시키는 효과를 지니고 있다.