公开(公告)号：KR1020100031054A

公开(公告)日：2010-03-19

申请号：KR1020090022787

申请日：2009-03-17

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 타나까타카시 ,  사이토유스케 ,  이와시타미츠아키

IPC: H01L21/288 ,  C23C18/38

CPC classification number: C23C18/1628 ,  C23C18/1632 ,  C23C18/1678 ,  C23C18/1682 ,  C23C18/31 ,  C23C18/38

Abstract: PURPOSE: A cap metal forming method is provided to supply a cap metal having a uniform membrane thickness, and to reduce the used amount of an electroless plating solution by restricting production of by-products. CONSTITUTION: A cap metal forming method includes the following steps: horizontally maintaining a substrate on a rotatable maintenance device built in an inner chamber(120); supplying gas into the inner chamber and an outer chamber(110); forming pressure gradient between the inner chamber and the outer chamber; supplying plating liquid on the predetermined location of the surface of the substrate; and forming the cap metal at least one or more regions.

Abstract translation: 目的：提供一种帽金属成形方法来提供具有均匀膜厚度的帽金属，并且通过限制副产物的生产来减少化学镀溶液的使用量。 构成：帽金属成形方法包括以下步骤：将衬底水平地保持在内置于内腔（120）中的可旋转维护装置上; 向内腔供应气体和外腔（110）; 在内室和外室之间形成压力梯度; 在所述基板表面的预定位置上供应电镀液; 以及形成所述帽金属至少一个或多个区域。

公开(公告)号：KR1020080031799A

公开(公告)日：2008-04-11

申请号：KR1020070099728

申请日：2007-10-04

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 나카모리미츠노리 ,  사이토유스케 ,  이시하라아키라 ,  다나카사토루 ,  무라카미유지

IPC: H01L21/304

CPC classification number: H01L21/30604 ,  H01L21/02019 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051

Abstract: A substrate processing method, a substrate processing device, and a recording medium are provided to restrain moisture sinking into a dry fluid which is supplied into a substrate by replacing a first gas into a second gas having low humidity within a chamber. A first-gas supplying step is performed for supplying a first gas from a first-gas supplying part into a chamber. When the chamber is filled with the first gas, a substrate processing step is performed for supplying a process liquid from a process-liquid supplying part onto a surface of a substrate to be processed in the chamber, so as to process the surface of the substrate to be processed, while the process liquid discharged from the chamber is returned to the process-liquid supplying part by a process-liquid collecting line. A second gas supplying step is performed for supplying a second gas whose humidity is lower than that of the first gas, from a second gas supplying part into the chamber, so as to replace the first gas in the chamber with the second gas. When the chamber is filled with the second gas, a drying step is performed for supplying a drying fluid from a drying-fluid supplying part onto the surface of the substrate to be processed, so as to dry the surface of the substrate to be processed.

Abstract translation: 提供基板处理方法，基板处理装置和记录介质，以通过将第一气体替换为室内具有低湿度的第二气体来抑制被供应到基板中的干燥流体的水分。 执行第一气体供给步骤，用于将第一气体从第一气体供应部件供应到室中。 当腔室填充有第一气体时，执行基板处理步骤，用于将处理液体从处理液体供应部件供应到在室中待处理的基板的表面上，以便处理基板的表面 待处理时，从室排出的处理液通过处理液收集管路返回到处理液供给部。 进行第二气体供给步骤，用于将第二气体的第二气体从第二气体供给部供给到室内，以将第二气体的湿度从第一气体的第二气体供给到第二气体中。 当腔室填充有第二气体时，执行干燥步骤，用于将干燥流体供给部件的干燥流体供给到待加工基板的表面上，以便干燥被处理基板的表面。

公开(公告)号：KR100598197B1

公开(公告)日：2006-07-07

申请号：KR1020040020177

申请日：2004-03-25

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 미츠오카가즈유키 ,  혼다미노루 ,  강송윤 ,  사이토유스케

IPC: H01L21/26

CPC classification number: H01L21/31058 ,  Y10S430/143

Abstract: 종래의 큐어(cure) 방법의 경우에는, 전자 빔에 의해 유기재료막의 표면 층부를 경화시켜 기계적 강도를 개선할 수 있지만, 유기재료막의 k값이 악화되거나, 유기재료를 구성하는 메틸기를 분해하여 웨트 세정시의 내약품성이 저하된다.
본 발명의 전자 빔 처리 방법은, 전자 빔을 이용하여 웨이퍼의 표면에 형성된 도포형 절연막(SOD막 : Spin-On Dielectric film)을 처리하는 방법에 있어서, 메탄 가스를 거쳐서 SOD막에 전자 빔을 조사한다.