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公开(公告)号:KR1020140017295A
公开(公告)日:2014-02-11
申请号:KR1020120084076
申请日:2012-07-31
Applicant: 삼성전자주식회사
IPC: H01L21/60
CPC classification number: H01L23/49811 , H01L21/563 , H01L23/3128 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/0345 , H01L2224/03462 , H01L2224/03464 , H01L2224/0347 , H01L2224/03912 , H01L2224/03914 , H01L2224/0401 , H01L2224/05082 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05558 , H01L2224/05561 , H01L2224/05562 , H01L2224/05568 , H01L2224/05655 , H01L2224/1147 , H01L2224/11849 , H01L2224/13017 , H01L2224/13018 , H01L2224/1308 , H01L2224/13083 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13155 , H01L2224/16 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81011 , H01L2224/81024 , H01L2224/81191 , H01L2224/81801 , H01L2924/00014 , H01L2924/15311 , H01L2924/181 , H01L2924/351 , H01L2924/3512 , H01L2924/381 , H01L2924/014 , H01L2924/01047 , H01L2924/0105 , H01L2924/00012 , H01L2924/01074 , H01L2924/01029 , H01L2924/01023 , H01L2924/01049 , H01L2924/01079 , H01L2924/01083 , H01L2924/0103 , H01L2924/01058 , H01L2224/05552 , H01L2924/00
Abstract: The present invention relates to a semiconductor device having a multi-bump structural electrical interconnection and a method for fabricating the same. A substrate including a chip pad is provided. A solder stack including at least two solder layers stacked with at least one middle layer in-between, is formed on the substrate. A bump stack electrically connected to the chip pad is formed by performing a reflow process on the solder stack which includes at least two bumps stacked with a middle layer in-between.
Abstract translation: 本发明涉及具有多凸块结构电互连的半导体器件及其制造方法。 提供了包括芯片焊盘的基板。 在衬底上形成包括至少两个层叠有至少一个中间层的焊料层的焊料叠层。 电连接到芯片焊盘的突起堆叠通过在焊料堆上进行回流处理而形成,焊料堆包括至少两个堆叠在其间的中间层的凸块。
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公开(公告)号:KR1020130126171A
公开(公告)日:2013-11-20
申请号:KR1020120050040
申请日:2012-05-11
Applicant: 삼성전자주식회사
IPC: H01L21/60 , H01L23/488
CPC classification number: H01L2224/10126 , H01L2224/11 , H01L2224/13 , H01L2224/16225 , H01L2924/15311 , H01L2924/00012
Abstract: A bump structure includes a bump which is disposed on a connection pad of a substrate, comprises a lower part having a first width and an upper part having a second width wider than the first width, and is made of a material having lower rigidity than that of copper; and a support pattern which supports the sidewall of the lower part of the bump by being in contact with the sidewall of the lower part of the bump and includes insulating materials. The bump structure improves electrical and mechanical reliability by preventing cracks and separation of a lower connection pad.
Abstract translation: 凸块结构包括设置在基板的连接焊盘上的凸块,包括具有第一宽度的下部部分和具有比第一宽度宽的第二宽度的上部部分,并且由刚性刚度低的材料制成, 的铜; 以及支撑图案,其通过与凸块的下部的侧壁接触而支撑凸块的下部的侧壁,并且包括绝缘材料。 凸块结构通过防止下连接垫的裂纹和分离来提高电气和机械可靠性。
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公开(公告)号:KR1020130035619A
公开(公告)日:2013-04-09
申请号:KR1020110100032
申请日:2011-09-30
Applicant: 삼성전자주식회사
CPC classification number: H01L24/11 , H01L23/3192 , H01L24/05 , H01L24/13 , H01L24/14 , H01L24/16 , H01L2224/0231 , H01L2224/02311 , H01L2224/02313 , H01L2224/02331 , H01L2224/02375 , H01L2224/02381 , H01L2224/0239 , H01L2224/0401 , H01L2224/05166 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/11912 , H01L2224/13024 , H01L2224/13027 , H01L2224/13082 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/14104 , H01L2224/14515 , H01L2224/16145 , H01L2224/16225 , H01L2224/16227 , H01L2924/3511 , H01L2924/3512 , H01L2924/01022 , H01L2924/01074 , H01L2924/01029 , H01L2924/01028 , H01L2924/01079 , H01L2924/00014 , H01L2924/01047 , H01L2924/01046 , H01L2924/01083 , H01L2924/01051 , H01L2924/014
Abstract: PURPOSE: A method for forming a connection bump of a semiconductor device is provided to prevent a defect due to a flatness problem by positioning the uppermost surfaces of a connection bump and a dummy connection bump with the same level. CONSTITUTION: A photoresist pattern(120) with open patterns is formed. Pillar layers(114) are formed in the open patterns by a first electroplating process. A solder layer(116) is formed on the pillar layers by a second electroplating process. The photoresist pattern is removed. A reflow process is performed on a semiconductor substrate(100) to form a breakdown solder layer and a solder bump.
Abstract translation: 目的:提供一种用于形成半导体器件的连接凸块的方法,通过将连接凸块的最上表面和具有相同电平的虚拟连接凸块定位来防止由于平坦度问题引起的缺陷。 构成:形成具有开放图案的光致抗蚀剂图案(120)。 柱层(114)通过第一电镀工艺以开放图案形成。 通过第二电镀工艺在柱层上形成焊料层(116)。 去除光致抗蚀剂图案。 在半导体衬底(100)上进行回流工艺以形成击穿焊料层和焊料凸块。
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公开(公告)号:KR1020130004834A
公开(公告)日:2013-01-14
申请号:KR1020110066128
申请日:2011-07-04
Applicant: 삼성전자주식회사
CPC classification number: H01L24/11 , H01L23/3128 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/32 , H01L24/81 , H01L2224/02123 , H01L2224/0331 , H01L2224/0332 , H01L2224/0345 , H01L2224/03464 , H01L2224/03912 , H01L2224/0401 , H01L2224/05016 , H01L2224/05017 , H01L2224/05018 , H01L2224/05019 , H01L2224/05022 , H01L2224/05024 , H01L2224/05025 , H01L2224/05026 , H01L2224/05027 , H01L2224/05073 , H01L2224/05082 , H01L2224/05083 , H01L2224/05166 , H01L2224/0519 , H01L2224/05191 , H01L2224/05556 , H01L2224/05558 , H01L2224/05559 , H01L2224/0556 , H01L2224/05562 , H01L2224/05568 , H01L2224/05666 , H01L2224/0569 , H01L2224/05691 , H01L2224/1131 , H01L2224/1132 , H01L2224/1145 , H01L2224/11462 , H01L2224/11464 , H01L2224/1147 , H01L2224/11849 , H01L2224/11912 , H01L2224/13013 , H01L2224/13014 , H01L2224/13017 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13166 , H01L2224/1319 , H01L2224/13191 , H01L2224/14131 , H01L2224/1416 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2924/00014 , H01L2924/1435 , H01L2924/15311 , H01L2924/15788 , H01L2924/181 , H01L2924/00012 , H01L2924/01074 , H01L2924/014 , H01L2224/05552 , H01L2924/00
Abstract: PURPOSE: A semiconductor chip and a flip-chip package including the semiconductor chip are provided to form a buffer made of a metal or an insulating material within a bump structure and to reduce the stress due to the difference of the heat expansion coefficient between the semiconductor chip and a PCB. CONSTITUTION: A body part(110) includes a semiconductor structures and lines. A passivation layer(120) covers the upper surface of the body part and protects the body part. A pad(130) is electrically connected to the lines. A bump structure(180) is formed in the opening part of the passivation layer. The bump structure includes an UBM(Under Bump Metal)(140), a buffer(150) and a bump(160). The buffer is made of a conductive or an insulating material.
Abstract translation: 目的:提供包括半导体芯片的半导体芯片和倒装芯片封装,以在凸块结构内形成由金属或绝缘材料制成的缓冲器,并且减小由于半导体之间的热膨胀系数的差异引起的应力 芯片和PCB。 构成:身体部分(110)包括半导体结构和线。 钝化层(120)覆盖主体部分的上表面并保护身体部位。 衬垫(130)电连接到线路。 在钝化层的开口部分形成凸起结构(180)。 凸块结构包括UBM(低爆破金属)(140),缓冲器(150)和凸块(160)。 缓冲器由导电或绝缘材料制成。
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公开(公告)号:KR1020110024212A
公开(公告)日:2011-03-09
申请号:KR1020090082114
申请日:2009-09-01
Applicant: 삼성전자주식회사
CPC classification number: G06F11/34 , H04B1/408 , H04W48/02 , H04W88/027 , H04W88/028
Abstract: PURPOSE: A method for setting timer function per applications is provided to set timer function for each application of a mobile terminal thereby checking using time of each application. CONSTITUTION: If a timer function setup mode is requested, a mobile terminal checks allocation information allocated for each application(2001,2003). According to the allocation information, the mobile terminal constitutes and provides an interface(2005). The mobile terminal detects an interaction inputted to a GUI(Graphical User Interface) region of the interface(2007). According to the interaction, the mobile terminal controls the increase or decrease of allocation information of at least one or more specific application(2011). The mobile terminal renews the changed allocation information, and provide the renewed information(2015).
Abstract translation: 目的:提供每个应用程序设置定时器功能的方法,为移动终端的每个应用设置定时器功能,从而检查每个应用程序的使用时间。 规定:如果请求定时器功能设置模式,则移动终端检查为每个应用分配的分配信息(2001,2003)。 根据分配信息,移动终端构成并提供接口(2005)。 移动终端检测输入到界面(2007)的GUI(图形用户界面)区域的交互。 根据交互,移动终端控制至少一个或多个特定应用的分配信息的增加或减少(2011)。 移动终端更新已更改的分配信息,并提供更新信息(2015)。
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公开(公告)号:KR100446289B1
公开(公告)日:2004-09-01
申请号:KR1020000060262
申请日:2000-10-13
Applicant: 삼성전자주식회사 , 학교법인 성균관대학
IPC: G10L15/14
CPC classification number: G06K9/6297 , G10L15/142 , G10L15/144 , Y10S707/99935
Abstract: An information search method and apparatus using an Inverse Hidden Markov Model (IHMM) are provided. The information search method involves the steps of: (a) obtaining a minimum state probability phi'i(t) for a particular state searched at a current time t in a HMM state lattice of a reference information model by using minimum state probabilities of effective states, each of which is a probability accumulated along a search path up to a previous time t-1, and then updating the obtained minimum state probability phi'i(t) with a predetermined value if the minimum state probability phi'i(t) is greater than a minimum unlikelihood score; (b) obtaining an optimal path value corresponding to the lowest of a plurality of minimum state probabilities obtained after step (a) is performed for a period of time T which is greater than t, and updating the minimum unlikelihood score with the optimal path value if the minimum unlikelihood score is greater than the optimal path value; (c) determining whether or not the optimal path value has been obtained for each of the predetermined reference information models, and if not, iterating steps (a) and (b) for another reference information model for which the optimal path value has not been obtained; and (d) if the optimal path value has been obtained for each of the reference information models, determining that the reference information model yielding the optimal path value with which the minimum unlikelihood score was last updated best matches the unknown information, wherein for the period of time T, step (a) is performed for each of one or more states searched at every current time t=1, 2, . . . T, the effective states are states searched at previous time t-1 which have minimum state probabilities less than the minimum unlikelihood score, and from which a transition can be made to the particular state searched at time t, and the minimum state probability of the particular state corresponds to the lowest among state probabilities of the particular state for making a transition to the particular state from the effective states.
Abstract translation: 提供了一种使用反隐马尔科夫模型(IHMM)的信息搜索方法和装置。 该信息搜索方法包括以下步骤:(a)通过使用有效的最小状态概率在参考信息模型的HMM状态点阵中获得针对在当前时间t搜索的特定状态的最小状态概率phi'i(t) 状态,其中每个状态是沿着直到前一时间t-1的搜索路径累积的概率,然后如果最小状态概率phi'i(t)更新所获得的最小状态概率phi'i(t) )大于最小不可能分数; (b)获得与在大于t的时间段T执行步骤(a)之后获得的多个最小状态概率中的最小值相对应的最佳路径值,并且用最优路径值更新最小不可能分数 如果最小不可能分数大于最佳路径值; (c)确定是否已经针对每个预定参考信息模型获得了最佳路径值,并且如果否,则针对尚未获得最优路径值的另一参考信息模型迭代步骤(a)和(b) 获得; (d)如果已经为每个参考信息模型获得了最佳路径值,则确定产生最近不可能分数最后更新的最佳路径值的参考信息模型与未知信息最匹配,其中对于该周期 的时刻T,针对每个当前时刻t = 1,2,...,T搜索的一个或多个状态中的每一个执行步骤(a)。 。 。 T,有效状态是在前一时刻t-1搜索到的状态概率小于最小不可能分数的状态,并且可以从该状态转换到在时间t搜索的特定状态,并且最小状态概率 特定状态对应于用于从有效状态过渡到特定状态的特定状态的状态概率中最低的状态。
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公开(公告)号:KR1020040054360A
公开(公告)日:2004-06-25
申请号:KR1020020081392
申请日:2002-12-18
Applicant: 삼성전자주식회사
IPC: G06F7/52
Abstract: PURPOSE: A device for operating a high speed convolution of the low power drive is provided to process an operation at high speed, use small power, and have a high accuracy of an operation result expressed in the fixed point data. CONSTITUTION: A controller(110) periodically generates the first image data performing the convolution operation for the first pixel and the second image data performing the convolution operation for the second pixel by receiving the pixel data, and performs entire control. An image data storage(120) updates/stores the first and the second image data. A kernel coefficient storage(140) stores the kernel coefficients of a fixed size. An operator(150) multiplies the kernel coefficient respectively matched with the first and the second image data one by one, respectively sums the multiplied data, and outputs the convolution operation data for the first and the second pixel by controlling a bit number of each accumulated data.
Abstract translation: 目的:提供用于操作低功率驱动器的高速卷积的装置,以高速度处理操作,使用小功率,并且具有在固定点数据中表达的运算结果的高精度。 构成:控制器(110)通过接收像素数据周期性地产生对第一像素执行卷积运算的第一图像数据和执行第二像素的卷积运算的第二图像数据,并执行整个控制。 图像数据存储器(120)更新/存储第一和第二图像数据。 内核系数存储器(140)存储固定大小的内核系数。 操作者(150)将分别与第一图像数据和第二图像数据分别匹配的核心系数逐一相乘,分别对相乘的数据求和,并且通过控制每个累积的第一和第二像素的位数来输出第一和第二像素的卷积运算数据 数据。
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公开(公告)号:KR100423502B1
公开(公告)日:2004-03-18
申请号:KR1020010072471
申请日:2001-11-20
Applicant: 삼성전자주식회사
IPC: H03B5/12
CPC classification number: H03K3/354 , H03B5/1215 , H03B5/1228 , H03B5/124
Abstract: A differential type VCO (Voltage Controllable Oscillator) is disclosed. The VCO has a differential amplifier having a couple of transistors and a couple of LC tanks. At each LC tank, a transformer is connected to form a buffer. An oscillating signal is output through the buffer with no power consumption. Additionally, a capacitor is connected to the secondary coil of the transformer to form a bandpass filter, thereby attenuating a harmonic signal included in the oscillating signal.
Abstract translation: 公开了一种差分型VCO(电压可控振荡器)。 VCO具有一个差分放大器,它具有一对晶体管和一对LC晶体管。 在每个LC电抗器上连接一个变压器以形成一个缓冲区。 振荡信号通过缓冲器输出,不消耗功率。 另外,电容器连接到变压器的次级线圈以形成带通滤波器,从而衰减包含在振荡信号中的谐波信号。
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公开(公告)号:KR1020030082045A
公开(公告)日:2003-10-22
申请号:KR1020020020554
申请日:2002-04-16
Applicant: 삼성전자주식회사
IPC: G01R23/00
CPC classification number: G01R21/00 , G01R1/06772
Abstract: PURPOSE: An RF power sensor for measuring the power for RF signal by the capacitance is provided to measure the displacement amount of capacitance generated through the electrostatic force between the signal line formed on the substrate and the bridge. CONSTITUTION: An RF power sensor for measuring the power for RF signal by the capacitance includes a substrate(100), a fixing member(110) fixed by the substrate(100) for forming a signal line(110a) and a ground line(112a) to transmit the RF signals, a bridge(120) connected to the ground line(112a) lifted above the signal line(110a). In the RF power sensor, the bridge(120) is driven by the external driving force and the capacitance is generated between the bridge(120) and the signal line(110a) by the external driving force.
Abstract translation: 目的:提供一种用于通过电容测量RF信号功率的RF功率传感器,以测量通过形成在基板和桥之间的信号线之间的静电力产生的电容的位移量。 构成:用于通过电容测量RF信号的功率的RF功率传感器包括基板(100),由基板(100)固定以形成信号线(110a)的固定部件(110)和接地线(112a) )传送RF信号,连接到在信号线(110a)上方提升的接地线(112a)的桥(120)。 在RF功率传感器中,桥(120)由外部驱动力驱动,并且通过外部驱动力在桥(120)和信号线(110a)之间产生电容。
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公开(公告)号:KR1020010073699A
公开(公告)日:2001-08-01
申请号:KR1020000002479
申请日:2000-01-19
Applicant: 삼성전자주식회사
IPC: H03M13/41
CPC classification number: H03M13/4169 , H03M13/6502
Abstract: PURPOSE: A low power viterbi decoder is provided to remove unnecessary switching operations generated in conventional viterbi decoder by using programmed gate clock. CONSTITUTION: The pre-processing part(200) outputs determination value and path selection value of each state in current time unit. The determination value storing part(511) stores the determination value and shifts the stored value. The back tracking part(512) selects the path having minimum state evaluation amount. The back tracking path storing part(513) stores the determination selection value of the corresponding previous time unit. The gate clock generating part(500) generates gate clock which is controlled for removing the unnecessary switching operation.
Abstract translation: 目的:提供低功率维特比解码器,以通过使用编程的门时钟来消除常规维特比解码器中产生的不必要的切换操作。 构成:预处理部(200)以当前时间单位输出各状态的判定值和路径选择值。 确定值存储部分(511)存储确定值并移动所存储的值。 后跟踪部(512)选择具有最小状态评价量的路径。 后跟踪路径存储部(513)存储对应的前一时间单位的判定选择值。 栅极时钟产生部分(500)产生栅极时钟,其被控制用于去除不必要的切换操作。
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