-
公开(公告)号：KR102145205B1
公开(公告)日：2020-08-19
申请号：KR1020140050270
申请日：2014-04-25
Applicant: 삼성전자주식회사
IPC: H01L21/302 , H01L21/20 , H01L21/205 , H01L21/683
-
公开(公告)号：KR1020140131695A
公开(公告)日：2014-11-14
申请号：KR1020130050587
申请日：2013-05-06
Applicant: 삼성전자주식회사
CPC classification number: H01L33/06 , H01L33/007 , H01L33/32
Abstract: 본 발명은 반도체 발광소자 및 그 제조방법에 관한 것으로서, 제1 도전형 질화물 반도체층을 형성하는 단계; 상기 제1 도전형 질화물 반도체층 상에 활성층을 형성하는 단계; 및 상기 활성층 상에 제2 도전형 질화물 반도체층을 형성하는 단계;를 포함하며, 상기 활성층을 형성하는 단계는 복수의 양자우물층과 양자장벽층을 교대로 적층하되, 상기 양자우물층의 성장시에 일정 농도의 불순물을 도핑하여, 상기 복수의 양자우물층 중 적어도 하나의 내부에 적어도 2개의 불순물도핑층을 개재하는 것을 특징으로 하여, 질화물 반도체 발광소자의 광추출 효율이 더욱 향상되는 효과가 있다.
Abstract translation: 本发明涉及半导体发光器件及其制造方法，其包括以下步骤：形成第一导电型氮化物半导体层; 在所述第一导电型氮化物半导体层上形成有源层; 以及在所述有源层上形成第二导电型氮化物半导体层。 在形成有源层的步骤中，多个量子阱层和量子势垒层交替层叠，并且至少两个杂质掺杂层通过在生长期间掺杂一定浓度的杂质而置于量子阱层中的至少一个内部 量子阱层。 提高了氮化物半导体发光器件的光提取效率。
-
公开(公告)号：KR1020130111032A
公开(公告)日：2013-10-10
申请号：KR1020120033492
申请日：2012-03-30
Applicant: 삼성전자주식회사
IPC: H01L33/14
CPC classification number: H01L33/145 , H01L33/06 , H01L33/22 , H01L33/32
Abstract: PURPOSE: A semiconductor light emitting device blocks overflow electrons and secures mobility of a hole, improving the luminous efficiency. CONSTITUTION: An n-type semiconductor layer (120) and a p-type semiconductor layer (150) are formed on a substrate (110). An active layer (130) is formed between the n-type semiconductor layer and the p-type semiconductor layer. An electron injection barrier (140) is formed between the active layer and the p-type semiconductor layer. The electron injection barrier includes multiple cut-off regions. A well region having the lower band gap energy than the cut-off region is equipped between the multiple cut-off regions. The cut-off region and the well region are arranged by turns and form a super-lattice structure.
Abstract translation: 目的：半导体发光器件阻挡溢出电子并确保孔的迁移率，提高发光效率。 构成：在衬底（110）上形成n型半导体层（120）和p型半导体层（150）。 在n型半导体层和p型半导体层之间形成有源层（130）。 在有源层和p型半导体层之间形成电子注入势垒（140）。 电子注入势垒包括多个截止区域。 具有比截止区域更低的带隙能量的阱区被配置在多个截止区域之间。 截止区域和阱区域轮流排列并形成超晶格结构。
-
公开(公告)号：KR101313262B1
公开(公告)日：2013-09-30
申请号：KR1020100066925
申请日：2010-07-12
Applicant: 삼성전자주식회사
IPC: H01L21/20
CPC classification number: H01L33/0075 , C23C16/45502 , C23C16/45517 , C23C16/45563 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558 , C23C16/45591 , C23C16/458 , C23C16/4584 , C23C16/4585 , H01L33/0066 , H01L2933/0016
Abstract: 화학 기상 증착 장치 및 이를 이용한 반도체 에피 박막의 제조 방법이 제공된다.
본 발명에 따른 화학 기상 증착 장치는, 소정 크기의 내부공간을 가지는 내부관 및 상기 내부관을 덮어 기밀을 유지하는 상부관을 갖는 반응 챔버; 상기 내부관 내에 배치되며, 복수개의 웨이퍼가 소정 간격으로 적재되어 구비되는 웨이퍼 홀더; 및 상기 웨이퍼의 표면에 반도체 에피 박막을 성장시키도록 상기 반응 챔버 내부로 외부로부터 반응가스를 공급하는 적어도 하나의 가스 라인 및 상기 가스 라인과 연통하여 상기 반응가스를 상기 웨이퍼 각각에 대해 분사하는 복수개의 분사노즐을 갖는 가스 공급부;를 포함하고, 상기 웨이퍼의 표면에 성장되는 상기 반도체 에피 박막은 제1 도전형 반도체층, 활성층, 제2 도전형 반도체층의 순서로 형성된 발광구조물을 포함할 수 있다.-
公开(公告)号：KR1020130104823A
公开(公告)日：2013-09-25
申请号：KR1020120026701
申请日：2012-03-15
Applicant: 삼성전자주식회사
IPC: H01L33/22
CPC classification number: H01L33/22 , H01L33/04 , H01L2933/0083
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve luminous efficiency and dispersion characteristics by reducing a lattice defect. CONSTITUTION: A first conductive semiconductor layer (120) has a plurality of V-pits (122). An active layer (140) is formed on the first conductive semiconductor layer. A second conductive semiconductor layer (150) is formed on the active layer. A metal unit (124) fills a part of the V- pits. A first electrode (161) and a second electrode (162) are connected to an external power source and apply electric signals to the first conductive semiconductor layer and the second conductive semiconductor layer.
Abstract translation: 目的：提供一种半导体发光器件及其制造方法，通过减少晶格缺陷来提高发光效率和色散特性。 构成：第一导电半导体层（120）具有多个V凹坑（122）。 在第一导电半导体层上形成有源层（140）。 在有源层上形成第二导电半导体层（150）。 金属单元（124）填充V形凹坑的一部分。 第一电极（161）和第二电极（162）连接到外部电源，并将电信号施加到第一导电半导体层和第二导电半导体层。
-
Patent Agency Ranking
公开(公告)号：KR1020110093476A
公开(公告)日：2011-08-18
申请号：KR1020100013545
申请日：2010-02-12
Applicant: 삼성전자주식회사
IPC: H01L21/205 , H01L33/02
CPC classification number: C23C16/54 , C23C16/45563 , C30B23/02 , C30B25/14 , C30B29/40 , H01L21/0254 , H01L21/0262 , H01L33/007
Abstract: PURPOSE: A vapor deposition system, a light emitting device manufacturing method, and a light emitting device are provided to maintain the temperatures of first and second chambers uniform, thereby reducing deterioration of a device. CONSTITUTION: A first chamber(101) comprises a first susceptor and at least one first gas distributor. The first gas distributor emits a gas in the direction parallel with a substrate(110). The substrate is arranged in the first susceptor. A second chamber(102) includes a second susceptor and at least one second gas distributor. The second gas distributor is arranged on the second susceptor to emit gas downward.
Abstract translation: 目的：提供气相沉积系统，发光器件制造方法和发光器件，以保持第一和第二腔室的温度均匀，从而减少器件的劣化。 构成：第一室（101）包括第一基座和至少一个第一气体分配器。 第一气体分配器沿与基板（110）平行的方向发射气体。 基板布置在第一基座中。 第二室（102）包括第二感受器和至少一个第二气体分配器。 第二气体分配器布置在第二基座上以向下排放气体。
-
公开(公告)号：KR1020110091245A
公开(公告)日：2011-08-11
申请号：KR1020100010985
申请日：2010-02-05
Applicant: 삼성전자주식회사
IPC: H01L33/20
CPC classification number: H01L33/22 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/36 , H01L2933/0016
Abstract: PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to improve optical extraction efficiency by forming a pit in over the top surface of the light emitting device and multiplying light extraction efficiency to the outside through the four sides of the pit. CONSTITUTION: An n-type semiconductor layer(130) has one or more pits on the upper side. An active layer(140) is formed on the n-type semiconductor layer. The area corresponding to the pits has bent upper side along the pits. A p-type semiconductor layer(150) is formed on the active layer. The area corresponding to the pits has bent upper side along the active layer. The active layer and the upper side of the p-type semiconductor layer include a first area which is bent toward the pits and a second area which is not bent.
Abstract translation: 目的：提供半导体发光器件及其制造方法，以通过在发光器件的顶表面上形成凹坑并通过凹坑的四边将光提取效率乘以外部来提高光提取效率。 构成：n型半导体层（130）在上侧具有一个或多个凹坑。 在n型半导体层上形成有源层（140）。 与坑相对应的区域沿着凹坑弯曲上侧。 在有源层上形成p型半导体层（150）。 与凹坑相对应的区域沿着活性层弯曲上侧。 p型半导体层的有源层和上侧包括朝向凹坑弯曲的第一区域和不弯曲的第二区域。
-
公开(公告)号：KR1020110070545A
公开(公告)日：2011-06-24
申请号：KR1020090127403
申请日：2009-12-18
Applicant: 삼성전자주식회사
IPC: H01L33/06
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/36 , H01L2924/12041
Abstract: PURPOSE: A nitride semiconductor light emitting device is provided to improve the optical output of a light emitting device by increasing the injection of holes by reducing potential barrier due to piezoelectric effect. CONSTITUTION: An n type nitride semiconductor layer(120) is formed on a substrate. An active layer(130) is formed on the n type nitride semiconductor layer by alternatively stacking a plurality of quantum well layers(131) and a plurality of quantum barrier layers(133). The quantum barrier layer includes an intermediate well layer(135b) and a sub quantum barrier layer(135a) with a different energy band gap. A p type nitride semiconductor layer(140) is formed on the active layer.
Abstract translation: 目的：提供一种氮化物半导体发光器件，用于通过由于压电效应降低势垒来增加空穴的注入来改善发光器件的光输出。 构成：在衬底上形成n型氮化物半导体层（120）。 通过交替堆叠多个量子阱层（131）和多个量子势垒层（133），在n型氮化物半导体层上形成有源层（130）。 量子势垒层包括具有不同能带隙的中间阱层（135b）和子量子势垒层（135a）。 在有源层上形成p型氮化物半导体层（140）。
-
公开(公告)号：KR1020110050212A
公开(公告)日：2011-05-13
申请号：KR1020090107092
申请日：2009-11-06
Applicant: 삼성전자주식회사
IPC: H01L33/20 , G02F1/13357
Abstract: PURPOSE: A nitride semiconductor light emitting device and a manufacturing method of the same are provided to prevent the deterioration of luminous efficiency due to non- luminous combination. CONSTITUTION: In a nitride semiconductor light emitting device and a manufacturing method of the same, A first conductivity type nitride semiconductor layer(120) is formed on a substrate(110). An active layer(130) is formed on the first conductivity type nitride semiconductor layer. A second conductive type nitride semiconductor layer(140) is formed on the active layer. A first electrode(160) and a second electrode(160) are formed on the second conductive type nitride semiconductor layer. An uneven structure(300) is formed on the second conductive type nitride semiconductor layer.
Abstract translation: 目的：提供一种氮化物半导体发光器件及其制造方法，以防止由于非发光组合引起的发光效率的劣化。 构成：在氮化物半导体发光器件及其制造方法中，在衬底（110）上形成第一导电型氮化物半导体层（120）。 在第一导电型氮化物半导体层上形成有源层（130）。 在有源层上形成第二导电型氮化物半导体层（140）。 在第二导电型氮化物半导体层上形成第一电极（160）和第二电极（160）。 在第二导电型氮化物半导体层上形成不均匀结构（300）。
-
公开(公告)号：KR1020090104454A
公开(公告)日：2009-10-06
申请号：KR1020080029885
申请日：2008-03-31
Applicant: 삼성전자주식회사
IPC: H01L33/14
Abstract: PURPOSE: A nitride light emitting device is provided to improve the ESD and the optical power by forming the p-type nitride semiconductor layer of different doping concentration. CONSTITUTION: The nitride light emitting device(10) includes the light emitting structure, the p-type contact layer(15), and an n-type and P-contact layer(16a,16b). The light emitting structure includes the active layer(13) formed in an n-type, p-type nitride semiconductor layers(12,14). The p-type contact layer is formed on the p-type nitride semiconductor layer. The n-type and P-contact are electrically connected to an n-type and p-type nitride semiconductor layer. The p-type nitride semiconductor layer has the current spreading domain having the second layer and the first layer. The p-type doping concentration of the first floors is different from that of the second layer.
Abstract translation: 目的：提供氮化物发光器件，以通过形成不同掺杂浓度的p型氮化物半导体层来改善ESD和光功率。 构成：氮化物发光器件（10）包括发光结构，p型接触层（15）以及n型和P型接触层（16a，16b）。 发光结构包括形成在n型p型氮化物半导体层（12,14）中的有源层（13）。 p型接触层形成在p型氮化物半导体层上。 n型和P型接触电连接到n型和p型氮化物半导体层。 p型氮化物半导体层具有具有第二层和第一层的电流扩展域。 第一层的p型掺杂浓度与第二层的p型掺杂浓度不同。
-
-
-
-
-
-
-
-
-
Search Results
51
records
(took 0.028 seconds)
