Abstract:
A multimedia contents adding a filed for a metadata administration in a multimedia content, a metadata processing method and an apparatus thereof are provided to determine metadata update time in a contents regenerating device by adding a field. An A/V contents is comprised of file format of an element unit corresponding to a basic storage unit. A meta data renewal sensitive field is added by an element unit in a file format(420). The validity of corresponding meta data and the point of time when corresponding meta data is updated are recorded in the meta data renewal sensitive field(430). The meta data renewal related information is comprised of last update field recording the time when corresponding meta data is revised and the term of validity field recording the effective time of corresponding meta data.
Abstract translation:提供了多媒体内容中添加用于多媒体内容中的元数据管理的多媒体内容,元数据处理方法及其装置,以通过添加字段来确定内容再生装置中的元数据更新时间。 A / V内容由对应于基本存储单元的元素单元的文件格式组成。 元数据更新敏感字段由元素单元以文件格式添加(420)。 对应的元数据的有效性和对应的元数据被更新的时间点被记录在元数据更新敏感字段(430)中。 元数据更新相关信息包括记录对应元数据被修改的时间的最后更新字段和记录对应元数据的有效时间的有效期字段。
Abstract:
A semiconductor device package and a method of fabricating the same are provided to prevent bonding wires from being damaged by external physical stress by containing center bonding pads and bonding wires in a cavity of a cap-type member, thereby manufacturing a physically and electrically reliable and highly integrated semiconductor device package. A semiconductor device package comprises a printed circuit board(130), a semiconductor chip(110), a plurality of bonding wires(145), a cap-type member(150d), and a plurality of solder balls(160). A window is the center of the printed circuit board. The semiconductor chip is mounted onto the printed circuit board, exposing center bonding pads(112) through the window. The center bonding pads and the printed circuit board are electrically connected by the bonding wires through a window. The cap-type member is attached on a peripheral portion of a lower side of the printed circuit board including the window, having a cavity containing the center bonding pads and bonding wires for protection from external physical stress. The solder balls are installed on the lower side of the printed circuit board outside the cap-type member.
Abstract:
An antenna device for a mobile terminal is provided to stabilize a characteristic of the device by installing matching circuits on both ends of a connection line connecting an antenna element with an RF board. An antenna device includes an RF(Radio Frequency) board(101) provided on a mobile terminal, an antenna element(102) connected to the RF board, a connection line(103) connecting the RF board with the antenna element, and matching circuits(111,121) provided on both ends of the connection line. The connection line is a coaxial cable. An antenna base is mounted in the terminal to support the antenna element, and a printed circuit board is mounted on the antenna base.
Abstract:
리세스 채널 MOSFET 제조방법을 개시한다. 본 발명에 따른 리세스 채널 MOSFET 제조방법에서는, 반도체 기판 상에 절연막 패턴들을 형성한 다음, 그 위로 실리콘 산화막을 증착한다. 절연막 패턴들을 평탄화 종료점으로 삼아 실리콘 산화막을 평탄화시킴으로써, 절연막 패턴들 사이사이에 실리콘 산화막 마스크 패턴들을 형성하고, 절연막 패턴들은 제거한다. 실리콘 산화막 마스크 패턴들을 식각 마스크로 이용하여 기판을 식각함으로써 리세스 트렌치들을 형성한다. 실리콘 산화막 증착시, 기판에 형성되어 있을 수 있는 리세스를 제거하는 효과가 있다.
Abstract:
PURPOSE: A semiconductor device having a trench gate type transistor and a fabricating method thereof are provided to prevent the formation of unnecessary channels by removing a silicon region between an isolation layer and a gate insulating layer. CONSTITUTION: An active region is defined on a cell array region of a semiconductor substrate(100). A plurality of gate insulating layers(130) are formed on inner walls of gate trenches(120) including first inner walls(120a) and second inner walls opposite to the first inner walls. A plurality of gate electrodes(150) include a gate bottom part on the gate insulating layer and a gate top part on the semiconductor substrate. An isolation layer(118) is directly connected to the gate insulating layers. A plurality of sources/drains are formed within the semiconductor substrate of both sides of the gate electrode. A plurality of channel regions are formed around the gate insulating layers.