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公开(公告)号：KR101705705B1
公开(公告)日：2017-02-13
申请号：KR1020100041887
申请日：2010-05-04
Applicant: 삼성전자주식회사
IPC: H01L31/04
CPC classification number: H01L51/442 , H01L51/0036 , H01L51/4233 , H01L51/4273 , Y02E10/52 , Y02E10/549 , Y02P70/521
Abstract: 유기태양전지에관한것으로, 서로대향하는캐소드와애노드; 상기캐소드와애노드사이에존재하는광활성층; 상기광활성층과상기캐소드사이에존재하는버퍼층을포함하고, 상기캐소드는하기화학식 1로표시되는화합물을포함하고, 상기버퍼층은 ZnO를포함하는것인유기태양전지를제공한다. [화학식 1]상기화학식 1에대한정의는명세서내에존재한다.
Abstract translation: 包括阴极和阳极的有机太阳能电池，设置在阴极和阳极之间的光活性层和光活性层和阴极之间的缓冲层，其中阴极包括由以下化学式1表示的化合物Zn（1 -x）MxO（1-y）Wy，[化学式1]和缓冲层包括ZnO，其中在化学式1中，M是铝，镓，铟，硅，锗，钛，锆，铪或 其组合，W是氟，溴或其组合，x和y各自独立地大于或等于0且小于或等于0.1，条件是x和y不同时为0。
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公开(公告)号：KR101600051B1
公开(公告)日：2016-03-07
申请号：KR1020100014739
申请日：2010-02-18
Applicant: 삼성전자주식회사 , 삼성디스플레이 주식회사
IPC: H01L29/786 , G02F1/136 , B82Y10/00
Abstract: 산화물반도체및 이를포함하는산화물박막트랜지스터에대해서개시된다. 상기산화물반도체는 In-Zn 산화물에 Hf이포함되어형성된것으로최적의조성범위를지닌산화물반도체를제공할수 있다.
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公开(公告)号：KR101510212B1
公开(公告)日：2015-04-10
申请号：KR1020080053128
申请日：2008-06-05
Applicant: 삼성전자주식회사
IPC: G02F1/136 , H01L29/786
CPC classification number: H01L29/7869 , H01L29/66969
Abstract: 투명한산화물반도체를채널물질로사용하는산화물반도체박막트랜지스터의제조방법이개시된다. 개시되는산화물반도체박막트랜지스터의제조방법은, 채널층상에보호막을형성한다음, 100℃이상의온도에서 1시간이상열처리공정을수행하는단계를포함한다.
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公开(公告)号：KR1020150017040A
公开(公告)日：2015-02-16
申请号：KR1020130092662
申请日：2013-08-05
Applicant: 삼성전자주식회사
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L27/1251 , G02F1/13624 , G02F1/136286 , H01L27/1225 , H01L27/1237 , H01L27/3248 , H01L27/3262 , H01L29/4908 , H01L29/78609 , H01L29/7869 , H01L29/4232 , H01L29/76825 , H01L29/7802
Abstract: 트랜지스터, 이러한 트랜지스터의 제조방법 및 트랜지스터를 포함하는 전자소자가 개시된다. 개시된 트랜지스터는 직렬 연결된 제1 전계효과 트랜지스터와 제2 전계효과 트랜지스터를 포함하며, 상기 제1 전계효과 트랜지스터의 제1 게이트 절연막과 상기 제2 전계효과 트랜지스터의 제2 게이트 절연막은 누설 전류(leakage current) 또는 게이트 전계(electric field) 특성이 서로 다르게 형성된다.
Abstract translation: 公开了一种晶体管及其制造方法以及包括该晶体管的电子设备。 公开的晶体管包括串联连接的第一场效应晶体管和第二场效应晶体管。 第一场效应晶体管的第一栅极绝缘层的漏电流或电场特性与第二场效应晶体管的第二栅极绝缘层的漏电流或电场特性不同。
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公开(公告)号：KR1020130099705A
公开(公告)日：2013-09-06
申请号：KR1020120021409
申请日：2012-02-29
Applicant: 삼성전자주식회사 , 삼성디스플레이 주식회사
IPC: H01L29/786 , H01L21/336 , G02F1/136
CPC classification number: H01L29/78696 , H01L29/78618 , H01L29/78681 , H01L29/7869 , H01L29/45
Abstract: PURPOSE: A transistor, a manufacturing method thereof, and an electronic device including the same are provided to improve the performance of the electronic device by implementing the transistor with a low off-current and/or a high subthreshold slope. CONSTITUTION: A channel layer (C10) includes a nitrogen oxide semiconductor. A gate electrode (G10) corresponds to the channel layer. A source electrode (S10) is connected to the first area of the channel layer. A drain electrode (D10) is connected to the second area of the channel layer. A hole blocking layer is formed between the channel layer and the source electrode or between the channel layer and the drain electrode.
Abstract translation: 目的：提供晶体管及其制造方法以及包括该晶体管的电子器件，以通过实现具有低截止电流和/或高亚阈值斜率的晶体管来提高电子器件的性能。 构成：通道层（C10）包括氮氧化物半导体。 栅电极（G10）对应于沟道层。 源电极（S10）连接到沟道层的第一区域。 漏电极（D10）连接到沟道层的第二区域。 在沟道层和源电极之间或沟道层和漏电极之间形成空穴阻挡层。
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Patent Agency Ranking
公开(公告)号：KR101270174B1
公开(公告)日：2013-05-31
申请号：KR1020070124383
申请日：2007-12-03
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/7869 , H01L29/66969
Abstract: 산화물반도체박막트랜지스터의제조방법이개시된다. 개시된제조방법은기판상에게이트를형성한다음, 이게이트를덮도록기판상에게이트절연막을형성하는단계; 게이트절연막상에산화물반도체로이루어진채널층을형성하는단계; 채널층의양측면상에각각소스및 드레인전극을형성하는단계; 채널층에산소를공급하기위한플라즈마처리공정을수행하는단계; 소스및 드레인전극과, 채널층을덮도록보호막을형성하는단계; 및보호막을형성한다음, 열처리공정을수행하는단계;를포함한다.
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公开(公告)号：KR1020110082839A
公开(公告)日：2011-07-20
申请号：KR1020100002747
申请日：2010-01-12
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/7869 , B82Y10/00 , H01L29/66742 , H01L29/78696
Abstract: PURPOSE: An oxide thin film transistor and a manufacturing method thereof are provided to expand an active area of an oxide thin film transistor to the lower parts of a source and a drain to easily forming a channel in the active area, thereby enhancing the electrical features of the oxide thin film transistor. CONSTITUTION: A gate(11) is formed on a substrate(10). A gate insulating layer(12) is formed on the substrate and the gate. A source(14) and a drain(15) are formed on the gate insulating layer. An active area(13) is formed on the gate insulating layer between the source and the drain. The active area is expanded to the lower parts of the source and the drain.
Abstract translation: 目的：提供氧化物薄膜晶体管及其制造方法，以将氧化物薄膜晶体管的有源面积扩大到源极和漏极的下部，从而在有源区域容易地形成沟道，从而增强电气特征 的氧化物薄膜晶体管。 构成：在基板（10）上形成栅极（11）。 栅极绝缘层（12）形成在基板和栅极上。 源极（14）和漏极（15）形成在栅极绝缘层上。 在源极和漏极之间的栅绝缘层上形成有源区（13）。 有源区域扩展到源极和漏极的下部。
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公开(公告)号：KR1020110080118A
公开(公告)日：2011-07-12
申请号：KR1020100101875
申请日：2010-10-19
Applicant: 삼성전자주식회사
IPC: H01L29/786 , G02F1/136
CPC classification number: H01L29/78606 , H01L29/66742 , H01L29/7869
Abstract: PURPOSE: A thin film transistor having a multi-laminated etching preventing layer and a manufacturing method thereof are provided to prevent damage of a channel layer caused by an etchant and to enhance a sub-threshold swing property, a threshold voltage, an electromagnetic movement degree and a stability. CONSTITUTION: Multi-laminated etching preventing layers(140) are arranged on a channel layer(130). A source(150a) and a drain(150b) are respectively contacted to both sides of the channel layer. A gate(110) is corresponding to the channel layer. A gate insulating layer(120) is installed between the channel layer and the gate.
Abstract translation: 目的：提供一种具有多层次蚀刻防止层的薄膜晶体管及其制造方法，以防止由蚀刻剂引起的沟道层的损坏，并提高亚阈值摆动性，阈值电压，电磁运动度 和稳定。 构成：多层压蚀刻防止层（140）布置在沟道层（130）上。 源极（150a）和漏极（150b）分别与沟道层的两侧接触。 门（110）对应于沟道层。 栅极绝缘层（120）安装在沟道层和栅极之间。
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公开(公告)号：KR1020100030995A
公开(公告)日：2010-03-19
申请号：KR1020080090007
申请日：2008-09-11
Applicant: 삼성전자주식회사
IPC: G02F1/136 , H01L29/786
CPC classification number: H01L29/78609 , H01L29/78618 , H01L29/458
Abstract: PURPOSE: A method for manufacturing a thin film transistor by reducing off current of high drain area is provided. CONSTITUTION: A thin film transistor comprises a gate(11), gate insulation layer(12), channel(13), intermediate layer(14), source and drain(16a,16b). The gate is formed on one are of a substrate. The gate insulation layer is formed on the substrate and gate. The channel is formed on an area corresponding to the gate on the gate insulation layer. The intermediate layer is formed at both upper sides of the channel and on the gate insulation layer.
Abstract translation: 目的：提供一种通过减少高漏区电流来制造薄膜晶体管的方法。 构成：薄膜晶体管包括栅极（11），栅极绝缘层（12），沟道（13），中间层（14），源极和漏极（16a，16b）。 栅极形成在一个基板上。 栅极绝缘层形成在基板和栅极上。 沟道形成在与栅极绝缘层上的栅极对应的区域上。 中间层形成在通道的两个上侧和栅极绝缘层上。
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公开(公告)号：KR1020090122727A
公开(公告)日：2009-12-01
申请号：KR1020080048676
申请日：2008-05-26
Applicant: 삼성전자주식회사
IPC: H01L21/20
CPC classification number: C23C16/45565 , C23C16/45551 , C23C16/45574
Abstract: PURPOSE: An atomic layer deposition apparatus and an atomic layer deposition method using the same are provided to rapidly deposit a film of desired thickness on a substrate by injecting a first source gas, a first purge gas, a second source gas, and a second purge gas at the same time while the substrate or a shower head is moved. CONSTITUTION: A substrate supporting bar(120) is installed inside a reaction chamber, and supports a substrate(10). A shower head(130) includes a nozzle set capable of injecting a first source gas, a second source gas, and a purge gas on the substrate at the same time. At least one among the substrate supporting bar and the shower head is movably installed according to a first direction. A first source gas injection nozzle(31) is arranged in a first row. A purge gas injection nozzle(41,42) is arranged in a second row. A second source gas injection nozzle(32) is arranged in a third row.
Abstract translation: 目的：提供一种原子层沉积装置和使用其的原子层沉积方法，以通过注入第一源气体，第一吹扫气体，第二源气体和第二吹扫来快速沉积在衬底上的所需厚度的膜 同时在衬底或淋浴头移动的同时气体。 构成：衬底支撑杆（120）安装在反应室内，并支撑衬底（10）。 淋浴头（130）包括能够同时在基板上喷射第一源气体，第二源气体和吹扫气体的喷嘴组。 基板支撑杆和淋浴头中的至少一个根据第一方向可移动地安装。 第一源气体喷射喷嘴（31）布置在第一排中。 吹扫气体注入喷嘴（41,42）布置在第二排中。 第二源气体喷射喷嘴（32）布置在第三排中。
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