-
公开(公告)号：KR100908601B1
公开(公告)日：2009-07-21
申请号：KR1020070055243
申请日：2007-06-05
Applicant: 제일모직주식회사
CPC classification number: G03F7/091 , Y10S438/952
Abstract: 본 발명은 리쏘그래픽 공정에 유용한 반사방지성을 갖는 하드마스크 조성물에 관한 것으로, 본 발명에 따른 조성물은 매우 우수한 광학적 특성, 기계적 특성을 제공하며, 동시에 스핀-온 도포 기법을 이용하여 도포 가능한 특성을 제공한다. 특히, 본 발명의 조성물은 드라이 에칭 내성이 매우 우수한 박막으로서 높은 에스펙트비를 갖는 패턴을 형성할 수 있는 패턴형성용 다층막 및 패턴형성방법을 제공한다.
리쏘그래픽, 반사방지성, 하드마스크, 방향족 고리, 드라이 에칭 내성Abstract translation: 硬掩模组合物含有有机溶剂和一种或多种由式1,2和3表示的含芳环的聚合物：
-
42.发明公开
公开(公告)号：KR1020090067767A
公开(公告)日：2009-06-25
申请号：KR1020070135531
申请日：2007-12-21
Applicant: 제일모직주식회사
IPC: G03F7/11
CPC classification number: G03F7/091 , C08F220/18 , C08F220/28 , C08F220/36 , G03F7/0045 , G03F7/039 , G03F7/0757
Abstract: A bottom anti-reflective coating composition and a method for making a patterned material form on a substrate are provided to minimize the reflectivity between a resist and back layer in performing lithography technique. A bottom anti-reflective coating composition comprises a compound of the chemical formula 3. In the chemical formula 3, Q- is anion and contains one on the chemical formula 4. The composition also contains: a polymer containing an aromatic ring of the chemical formula 1; a compound of the chemical formula 3; and an organic solvent. In the chemical formula 1, 1
Abstract translation: 提供底部抗反射涂料组合物和在基材上形成图案化材料形式的方法，以在进行光刻技术时使抗蚀剂和背层之间的反射率最小化。 底部抗反射涂料组合物包含化学式3的化合物。在化学式3中，Q-是阴离子，并含有化学式4的化合物。该组合物还包含：含有化学式芳族环的聚合物 1; 化学式3的化合物; 和有机溶剂。 在化学式1中，1 <= n <190; R1是化学式2的结构之一; R2，R4和R5是氢或甲基; R3是-H，-CH3和-C2H5或-C（CH3）3。
-
43.发明授权
公开(公告)号：KR100844019B1
公开(公告)日：2008-07-04
申请号：KR1020080050935
申请日：2008-05-30
Applicant: 제일모직주식회사
Abstract: 본 발명은 리쏘그래픽 공정에 유용한 반사방지성을 갖는 하드마스크 조성물을 제공하기 위하여 하기 화학식 1 내지 3 중 어느 하나로 표시되는 방향족 고리 (aromatic ring) 함유 공중합체 및 상기 공중합체를 포함하는 것을 특징으로 하는 하드마스크 조성물을 제공한다.
[화학식 1]
[화학식 2]
[화학식 3]
(상기 식에서, 1≤m 0 는 -OH, 탄소수 1~7의 -C
n H
2n OH 이고,
R
1 는 중 어느 하나이며, R
2 는 -O-, 탄소수 1~7의 -C
n H
2n O- 이고, R
3 ~ R
7 는 각각 독립적으로 수소 (-H), 히드록시기 (-OH), C
1-10 의 알킬기, C
6-10 의 아릴기, 알릴기 및 할로겐 원자 중 어느 하나이다.)
본 발명에 따른 조성물은 매우 우수한 광학적 특성, 기계적 특성을 제공하며, 동시에 스핀-온 도포 기법을 이용하여 도포 가능한 특성을 제공한다. 특히, 본 발명의 조성물은 드라이 에칭 내성이 매우 우수한 박막으로서 높은 에스펙트비를 갖는 패턴을 형성할 수 있는 패턴형성용 다층막 및 패턴형성방법을 제공한다.
리쏘그래픽, 반사방지성, 하드마스크, 방향족 고리, 드라이 에칭 내성, 카본 함량-
公开(公告)号：KR100826104B1
公开(公告)日：2008-04-29
申请号：KR1020060138418
申请日：2006-12-29
Applicant: 제일모직주식회사
CPC classification number: G02B1/111 , C08G10/02 , C08G61/02 , G03F7/091 , C09D165/00
Abstract: A copolymer containing an aromatic ring, an antireflective hard mask composition containing the copolymer, and a method for forming a patterned shape on a substrate by using the composition are provided to improve optical properties, mechanical properties and etching selectivity. A copolymer containing an aromatic ring is represented by the formula 1 or 2, wherein l, m and n are an integer of 1-190; R1 is H, OH, a C1-C10 alkyl group, a C6-C10 aryl group, an allyl group or a halogen atom; R2 is -CH2-, -H2C-Ph-CH2-, -H2C-Ph-Ph-CH2-, -C(OH-substituted Ph)H-, or -C(Ph)H-; R3 is a conjugated diene; and R4 is an unsaturated dienophile. An antireflective hard mask composition comprises 1-25 wt% of the copolymer; and 75-99 wt% of an organic solvent.
Abstract translation: 含有芳环的共聚物，含有该共聚物的抗反射硬掩模组合物以及通过使用该组合物在基材上形成图案形状的方法被提供以改善光学性能，机械性能和蚀刻选择性。 含有芳环的共聚物由式1或2表示，其中l，m和n为1-190的整数; R1是H，OH，C1-C10烷基，C6-C10芳基，烯丙基或卤素原子; R2是-CH2-，-H2C-Ph-CH2-，-H2C-Ph-Ph-CH2-，-C（OH-取代的Ph）H-或-C（Ph）H-; R3是共轭二烯; R4是不饱和双亲体。 抗反射硬掩模组合物包含1-25重量％的共聚物; 和75-99重量％的有机溶剂。
-
公开(公告)号：KR100819162B1
公开(公告)日：2008-04-03
申请号：KR1020070040035
申请日：2007-04-24
Applicant: 제일모직주식회사
IPC: G03F7/004
Abstract: A hard mask composition having anti-reflective property is provided to minimize reflection between a resist layer and a backside layer, to realize excellent optical and mechanical properties and high etching selectivity during a lithographic process. A hard mask composition having anti-reflective property comprises: (a) an aromatic ring-containing polymer including at least one compound represented by the following formula 1 or 2; and (b) an organic solvent. In formula 1, n ranges from 1 to 190; R1 is a specific fused aromatic ring radical; R2 is an ethylene radical containing an aromatic ring or not; and each of X and Y represents H or OH. In formula 2, each of m and n is equal to or greater than 1 and less than 190 and m+n is equal to or greater than 3 and equal to or less than 190; each of R1 and R2 represents a specific fused aromatic ring radical; each of R3 and R4 represents an ethylene radical containing an aromatic ring or not; and each of X, Y and Z represents H or OH.
Abstract translation: 提供具有抗反射性能的硬掩模组合物以使抗蚀剂层和背面层之间的反射最小化，以在光刻工艺期间实现优异的光学和机械性能以及高蚀刻选择性。 具有抗反射性的硬掩模组合物包括：（a）含有至少一种由下式1或2表示的化合物的含芳环的聚合物; 和（b）有机溶剂。 在式1中，n的范围为1至190; R1是特定的稠合芳环基团; R2是含有芳环的亚乙基; 并且X和Y各自表示H或OH。 在式2中，m和n中的每一个等于或大于1且小于190，m + n等于或大于3并且等于或小于190; R1和R2各自表示特定的稠合芳环基团; R 3和R 4各自表示含有芳环的亚乙基; X，Y和Z各自表示H或OH。
-
Patent Agency Ranking46.发明授权
公开(公告)号：KR100816735B1
公开(公告)日：2008-03-25
申请号：KR1020060131034
申请日：2006-12-20
Applicant: 제일모직주식회사
Abstract: A hardmask composition for resist underlayers is provided to ensure anti-reflective characteristics and ensure a lithography process margin. An anti-reflective hardmask composition includes an aromatic ring-containing polymer represented by any one selected from the following formulae 1-3, and an organic solvent. The aromatic ring-containing polymer is contained in an amount of 1-30 parts by weight based on 100 parts by weight of the organic solvent, and has a weight average molecular weight of 1,000-30,000. The hardmask composition further comprises a cross-linking agent and a catalyst.
Abstract translation: 提供用于抗蚀底层的硬掩模组合物以确保抗反射特性并确保光刻工艺裕度。 防反射硬掩模组合物包括由下式1-3中任一种所表示的含芳环的聚合物和有机溶剂。 所述芳香族环聚合物的含量相对于100重量份有机溶剂为1-30重量份，重均分子量为1,000〜30,000。 硬掩模组合物还包含交联剂和催化剂。
-
47.发明公开
公开(公告)号：KR1020120077466A
公开(公告)日：2012-07-10
申请号：KR1020100139422
申请日：2010-12-30
Applicant: 제일모직주식회사
IPC: G03F7/11 , G03F7/004 , H01L21/027
CPC classification number: G03F7/094 , G03F7/11 , G03F7/004 , G03F7/0045 , G03F7/0047 , H01L21/027 , H01L21/0271
Abstract: PURPOSE: A hard mask composition, a pattern forming method using the same, a semiconductor integrated circuit device including patterns are provided to secure resistance to multi-etching and to improve optical characteristic. CONSTITUTION: A hard mask composition includes an aromatic ring containing compound with either a part represented by chemical formula 1 or a part represented by chemical formula 2. In chemical formula 1 or 2, Ar is an aromatic cyclic group; R1 to R3 are respectively single bonds, substituted or non-substituted C1 to C30 alkylene groups, substituted or non-substituted C3 to C30 cycloalkylene groups, substituted or non-substituted C6 to C30 arylene groups, substituted or non-substituted C3 to C30 cycloalkenylene groups, substituted or non-substituted C7 to C20 arylalkylene groups, substituted or non-substituted C1 to C20 heteroalkylene groups, substituted or non-substituted C2 to C30 heterocycloalkylene groups, substituted or non-substituted C2 to C30 heteroarylene groups, substituted or non-substituted C2 to C30 alkenylene groups, substituted or non-substituted C2 to C30 alkynylene groups, or the combination of the same; and n is 1 to 100.
Abstract translation: 目的：提供硬掩模组合物，使用其的图案形成方法，包括图案的半导体集成电路器件，以确保对多次蚀刻的抵抗力并提高光学特性。 构成：硬掩模组合物包括具有由化学式1表示的部分或由化学式2表示的部分的含芳环的化合物。在化学式1或2中，Ar为芳族环状基团; 取代或未取代的C 3〜C 30亚环烷基，取代或未取代的C 6〜C 30亚芳基，取代或未取代的C 3〜C 30亚环烯基 取代或未取代的C 1 -C 20亚芳基，取代或未取代的C 1至C 30杂亚烷基，取代或未取代的C 1至C 30杂亚烷基， 取代C2至C30亚烯基，取代或未取代的C2至C30亚炔基，或其组合; n为1〜100。
-
48.发明公开
公开(公告)号：KR1020120067602A
公开(公告)日：2012-06-26
申请号：KR1020100129101
申请日：2010-12-16
Applicant: 제일모직주식회사
IPC: G03F7/004 , G03F7/11 , H01L21/027
CPC classification number: H01L21/31144 , G03F7/094 , H01L21/02118 , H01L21/02282 , H01L21/0271 , G03F7/0045 , G03F7/004 , G03F7/0041 , G03F7/0047 , G03F7/11 , H01L21/027
Abstract: PURPOSE: A hard mask composition, a method for forming patterns using the same, and a semiconductor integrated circuit device including the patterns are provided to improve optical characteristic and to secure resistance to multiple etching. CONSTITUTION: A hard mask composition includes a compound with an aromatic ring represented by chemical formula 1 and a solvent. In chemical formula 1, A is an aromatic ring; R1 to R6 are respectively substituted or non-substituted C1 to C20 alkyl groups, substituted or non-substituted C3 to C30 cycloalkyl groups, substituted or non-substituted C6 to C30 aryl groups, substituted or non-substituted C3 to C30 cycloalkenyl groups, or substituted or non-substituted C7 to C20 arylalkyl groups, substituted or non-substituted C1 to C20 heteroalkyl groups, substituted or non-substituted C2 to C30 heterocycloalkyl groups, substituted or non-substituted C2 to C30 heteroaryl groups, substituted or non-substituted C2 to C30 alkenyl groups, substituted or non-substituted C2 to C30 alkynyl groups, substituted or non-substituted C1 to C30 alkoxyl groups, or the combination of the same; X1 to C6 are respectively C1 to C20 alkyl groups, substituted or non-substituted C3 to C30 cycloalkyl groups, substituted or non-substituted C6 to C30 aryl groups, substituted or non-substituted C1 to C30 alkoxyl groups, substituted or non-substituted C1 to C20 alkylamine groups, amino groups, hydroxyl groups, or the combination of the same; n1 to n6 are respectively 0 or 1; and the sum of n1 to n6 is between 1 and 6, inclusively.
Abstract translation: 目的：提供硬掩模组合物，使用其形成图案的方法和包括图案的半导体集成电路器件，以改善光学特性并确保对多次蚀刻的抵抗力。 构成：硬掩模组合物包括具有由化学式1表示的芳香环的化合物和溶剂。 在化学式1中，A是芳环; 取代或未取代的C 3至C 30环烷基，取代或未取代的C 6至C 30芳基，取代或未取代的C 3至C 30环烯基，或 取代或未取代的C7至C20芳烷基，取代或未取代的C1至C20杂烷基，取代或未取代的C2至C30杂环烷基，取代或未取代的C2至C30杂芳基，取代或未取代的C2 取代或未取代的C 2〜C 30炔基，取代或未取代的C 1〜C 30烷氧基，或其组合; 取代或未取代的C 6〜C 30芳基，取代或未取代的C 1〜C 30烷氧基，取代或未取代的C 1〜C 30烷氧基， 至C20烷基胺基，氨基，羟基或其组合; n1〜n6分别为0或1; n1〜n6的和为1〜6。
-
公开(公告)号：KR1020100080148A
公开(公告)日：2010-07-08
申请号：KR1020080138789
申请日：2008-12-31
Applicant: 제일모직주식회사
CPC classification number: C08G61/10 , C08G61/00 , C08L65/00 , G03F7/004 , G03F7/0045 , G03F7/0047
Abstract: PURPOSE: A polymer is provided to strong absorption in deep UV range and etching selectivity and to minimize reflection between a resist and lower layer. CONSTITUTION: A polymer has a repeat unit of chemical formula 1. The polymer composition contains a first polymer with a repeat unit of chemical formula 1 and a second polymer with repeat unit of chemical formula 2, *-[-Ar_3-X-]-*. A resist lower layer composition contains 1-20 weight% of polymer composition, 75-98.8 weight% of organic solvent, 0.1-5 weight% of cross linking ingredient, and 0.001-0.05 weight% of acid catalyst.
Abstract translation: 目的：提供聚合物以在深UV范围和蚀刻选择性下强吸收，并使抗蚀剂和下层之间的反射最小化。 构成：聚合物具有化学式1的重复单元。聚合物组合物含有具有化学式1的重复单元的第一聚合物和具有化学式2的重复单元的第二聚合物，* - [ - Ar_3-X - ] - *。 抗蚀剂下层组合物含有1-20重量％的聚合物组合物，75-98.8重量％的有机溶剂，0.1-5重量％的交联成分和0.001-0.05重量％的酸催化剂。
-
50.发明公开
公开(公告)号：KR1020100080140A
公开(公告)日：2010-07-08
申请号：KR1020080138776
申请日：2008-12-31
Applicant: 제일모직주식회사
CPC classification number: C08G61/10 , C08G61/02 , C08L75/00 , G03F7/004 , G03F7/0045 , G03F7/0047
Abstract: PURPOSE: An aromatic ring-containing polymer is provided to ensure high etching selectivity and to minimize reflection between the resist and backside layer. CONSTITUTION: An aromatic ring-containing polymer contains a repeat unit of chemical formulas 1 and 2. In chemical formula 1, R1-R3 are different or same hydrogen, hydroxyl group, halogen, substituted or non-substituted alkyl group, substituted or non-substituted aryl group, and substituted or non-substituted heteroaryl; x is 0 or 1; y is 03 integer; z is 0-2 integer; and A is substituted or non-substituted straight or branched alkylene group.
Abstract translation: 目的：提供含芳环的聚合物以确保高蚀刻选择性并使抗蚀剂和背面层之间的反射最小化。 构成：含芳环的聚合物含有化学式1和2的重复单元。在化学式1中，R 1 -R 3是不同或相同的氢，羟基，卤素，取代或未取代的烷基，取代或未取代的烷基， 取代的芳基和取代或未取代的杂芳基; x为0或1; y为03整数; z为0-2整数; A为取代或未取代的直链或支链亚烷基。
-
-
-
-
-
-
-
-
-
Search Results
71
records
(took 0.025 seconds)
