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公开(公告)号：KR100479264B1
公开(公告)日：2005-03-28
申请号：KR1020020067391
申请日：2002-11-01
Applicant: 한국전자통신연구원
IPC: C12Q1/68
Abstract: 본 발명은 주기적 가열과 냉각을 통한 혼성화 단계를 포함하는 혼성화 방법 및 이를 사용하는 폴리뉴클레오타이드 검출 장치에 관한 것이다. 먼저, 프로브에 타겟 폴리뉴클레오타이드를 공급한 후, 프로브와 타겟 폴리뉴클레오타이드의 혼성화물의 용융 온도보다 높은 온도에서 혼성화시키는 고온 혼성화 단계와 용융 온도보다 낮은 온도에서 혼성화시키는 저온 혼성화 단계를 2회 이상 순환하여 실시한다. 본 발명에 따르면, 혼성화가 신속하게 진행될 뿐만 아니라 혼성화 특이성도 증대시킬 수 있다. 따라서, 유전자 서열 내의 이상에 관한 정보를 신속 정확하게 검출해낼 수 있다.
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公开(公告)号：KR100452946B1
公开(公告)日：2004-10-14
申请号：KR1020020074014
申请日：2002-11-26
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A low power consumption microfabricated thermal cycler and a method for fabrication of the same are provided, thereby accurately and minutely controlling the temperature of the reaction occurring area, so that it can be applied to various bio chips including PCR chip, protein chip, DNA chip, drug delivery system, micro biological/chemical reactor and lab-on-a-chip. CONSTITUTION: The low power consumption microfabricated thermal cycler comprises an upper board(112) and a lower board(100), wherein the upper board(112) comprises an fluid inlet(114) and outlet, a reaction chamber(118), and a fluid channel(116) connecting the inlet(114) and outlet to the reaction chamber(118); and the lower board(100) comprises an insulated heating thin layer(106) formed on the lower board(100), a heating means(102) formed on the insulated heating thin layer(106), a temperature sensor(104) formed on the insulated heating thin layer(106), and an insulating layer(108) covering the heating means(102) and the temperature sensor(104); and the insulated heating thin layer(106) is composed of Si3N4, SiO2, Si3N4/SiO2/Si3N4 or SiO2/Si3N4/SiO2 and has thickness of 0.1 to 10 micrometer.
Abstract translation: 目的：提供一种低功耗的微制造型热循环仪及其制造方法，从而准确而精确地控制反应发生区域的温度，从而可应用于各种生物芯片，包括PCR芯片，蛋白质芯片， DNA芯片，药物输送系统，微生物/化学反应器和芯片实验室。 构成：低功耗微制造热循环仪包括上板（112）和下板（100），其中上板（112）包括流体入口（114）和出口，反应室（118）和 将入口（114）和出口连接到反应室（118）的流体通道（116）; （100）上形成的绝缘加热薄层（106），形成在绝缘加热薄层（106）上的加热装置（102），形成在其上的温度传感器（104） 绝缘加热薄层（106）和覆盖加热装置（102）和温度传感器（104）的绝缘层（108）; 所述绝缘加热薄膜（106）由Si3N4，SiO2，Si3N4 / SiO2 / Si3N4或SiO2 / Si3N4 / SiO2组成，厚度为0.1〜10微米。
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公开(公告)号：KR1020040041767A
公开(公告)日：2004-05-20
申请号：KR1020020069636
申请日：2002-11-11
Applicant: 한국전자통신연구원
IPC: C12Q1/00
CPC classification number: B01L3/5027 , B01J2219/00837 , B01L3/502738 , B01L3/502746 , B01L2200/0621 , B01L2200/0684 , B01L2400/0688 , B33Y70/00 , B33Y80/00 , Y10T137/2076 , Y10T436/2575
Abstract: PURPOSE: A device for controlling fluid using surface tension is provided, thereby removing additional pump and electric power supply from the device, so that the device can be minimized and portable, while reducing the production costs, and increasing production yield. CONSTITUTION: A device for controlling fluid using surface tension comprises at least one of fluid storage chambers(100, 102); at least one reaction chamber(112); at least one fluid discarding chamber(114); at least one fluid channel(108) connecting the storage chamber, the reaction chamber and the discarding chamber; at least one fluid flow delaying portion(110) which is positioned within the fluid channel and delays the fluid flow by the surface tension; and at least one of fluid flow stop valves(104, 106) which are positioned within the fluid channel and stopping the fluid flow, wherein the fluid flow is automatically generated by the surface tension.
Abstract translation: 目的：提供一种用于使用表面张力控制流体的装置，从而从装置中除去附加的泵和电力供应，从而可以将装置最小化和便携，同时降低生产成本，并提高产量。 构成：用于使用表面张力控制流体的装置包括流体储存室（100,102）中的至少一个; 至少一个反应室（112）; 至少一个流体废弃室（114）; 连接储存室，反应室和废弃室的至少一个流体通道（108） 至少一个流体流延迟部分（110），其定位在所述流体通道内并且使所述流体流动延迟所述表面张力; 以及定位在流体通道内并停止流体流动的流体流动截止阀（104,106）中的至少一个，其中流体流由表面张力自动产生。
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公开(公告)号：KR1020040039800A
公开(公告)日：2004-05-12
申请号：KR1020020068008
申请日：2002-11-05
Applicant: 한국전자통신연구원
IPC: C12Q1/68
CPC classification number: C12Q1/686 , C12Q2537/143 , C12Q2527/113 , C12Q2527/101
Abstract: PURPOSE: A method for performing multiplex PCR with cyclic changes of PCR parameters is provided, thereby preventing production of primer dimer and non-specific product, and reducing the time for screening optimal multiplex PCR conditions. CONSTITUTION: A method for performing multiplex PCR from a sample comprises cyclic changes of PCR parameters including the maturation temperature and the elongation time of a primer, wherein the sample includes blood, blood plasma, circular DNA(vector), cDNA library, genome or cell containing the genome; the maturation temperature and elongation time of the primer are increased at regular intervals; the maturation temperature is increased according to the value of Tmax - Tmin per 1 cycle and the elongation time is increased according to the value of £(Lmax - Lmin) DNA polymerization rate of taq DNA polymerase(bp/sec)| (total cycle - 7), in which Lmax is the sequence size of a largest PCR product(bp) and Lmin is the sequence size of a smallest PCR product(bp); and the volume of the sample is less than 1 microliter.
Abstract translation: 目的：提供PCR参数循环变化进行多重PCR的方法，从而防止引物二聚体和非特异性产物的产生，并减少筛选最佳多重PCR条件的时间。 构成：从样品中进行多重PCR的方法包括PCR参数的循环变化，包括引物的成熟温度和延长时间，其中样品包括血液，血浆，环状DNA（载体），cDNA文库，基因组或细胞 含有基因组; 引物的成熟温度和延长时间以规则的间隔增加; 根据每1个循环的Tmax-Tmin的值增加成熟温度，并且根据taq DNA聚合酶（bp / sec）的£（Lmax-Lmin）DNA聚合速率的值增加延长时间| （总周期-7），其中Lmax是最大PCR产物（bp）的序列大小，Lmin是最小PCR产物（bp）的序列大小; 样品的体积小于1微升。
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公开(公告)号：KR100419576B1
公开(公告)日：2004-02-19
申请号：KR1020010031991
申请日：2001-06-08
Applicant: 한국전자통신연구원
IPC: C25D17/02
Abstract: PURPOSE: An electroplating apparatus with a cathode electrode is provided to achieve high uniformity and efficiency of electroplating by improving structure of the cathode electrode and plating cup, thereby solving nonuniformed plating problems and suppressing deterioration of plating speed. CONSTITUTION: In an electroplating apparatus comprising a plating cup(20) for plating a wafer by flowing type plating, a head for sealing the plating cup, and an anode electrode plate for impressing a plus power source to the wafer(22), the electroplating apparatus comprises a cathode electrode plate(21) comprising a ring(21e) which is received in the plating cup with spaced apart from the bottom surface of the plating cup in a certain distance, and with which the wafer is contacted at a position that is lower than the upper surface of the plating cup, wherein the electroplating apparatus further comprises a plating solution circulating passageway(20a) which is installed at the outer side of the plating cup to circulate the plating solution contacted with the wafer to the outside, diameter of the plating cup is larger than that of the wafer, and the cathode electrode plate comprises a cylinder part(21a); a flange part(21b) that is extended from the upper surface of the cylinder part to the outer side; a bottom part(21c) that is extended from the lower surface of the cylinder part to the inner side; and a protrusion part(21d) that is extended from the bottom part to an upper surface direction of the cylinder part with the protrusion part spaced apart from the inner circumferential surface of the cylinder part in a certain distance, wherein the ring(21e) is expanded and formed on the protrusion part.
Abstract translation: 目的：提供一种具有阴极电极的电镀装置，通过改善阴极电极和电镀杯的结构，从而实现电镀的高均匀性和高效率，由此解决不均匀的电镀问题并抑制电镀速度的恶化。 本发明的目的在于提供一种电镀装置，该电镀装置包括用于通过流动式电镀对晶片进行电镀的电镀杯（20），用于密封电镀杯的头部和用于将正电源施加到晶片（22）的阳极电极板， 设备包括一个阴极板（21），该阴极板包括一个环（21e），该环被接收在电镀杯中并与电镀杯的底表面间隔开一定的距离，并且晶片与 其中，所述电镀装置还包括电镀液循环通道（20a），所述电镀液循环通道（20a）安装在所述电镀杯的外侧以使与所述晶片接触的所述电镀液循环至外部，所述电镀液的直径 所述电镀杯大于所述晶片的电镀杯，并且所述阴极电极板包括圆柱形部分（21a）; 凸缘部（21b），其从所述筒部的上表面向外侧延伸; 底部（21c），其从所述筒部的下表面向内侧延伸; 以及从所述筒部的所述底部向所述筒部的上表面方向延伸的突出部，所述突出部与所述筒部的所述内周面隔开一定距离，所述环（21e）为 在突出部分上膨胀并形成。
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Patent Agency Ranking
公开(公告)号：KR100417126B1
公开(公告)日：2004-02-05
申请号：KR1020010030893
申请日：2001-06-01
Applicant: 한국전자통신연구원
IPC: H01L21/60
CPC classification number: H01L2224/11 , H01L2224/1146 , H01L2224/11614 , H01L2224/11622 , H01L2224/11849 , H01L2224/13 , H01L2224/13099 , H01L2924/01078 , H01L2924/00012
Abstract: 본 발명은 플립 칩(Flip chip) 방식의 반도체 소자의 접속단자인 범프를 형성하는 방법에 관한 것으로, 입출력패드가 형성된 반도체칩 상에 보호막을 형성하는 단계, 상기 보호막을 선택적으로 식각하여 상기 입출력패드의 표면을 노출시키는 단계, 상기 노출된 입출력패드를 포함한 상기 보호막 상에 금속기저층을 형성하는 단계, 상기 금속기저층 상에 도금법을 이용하여 도금층을 형성하는 단계, 상기 도금층 상에 감광막을 도포하고 선택적으로 패터닝하여 감광막패턴을 형성하는 단계, 상기 감광막패턴을 식각 마스크로 이용하여 상기 도금층과 금속기저층을 순차적으로 식각하는 단계, 및 상기 도금층에 열을 가하여 상기 금속기저층 상에 상기 도금층으로 된 범프를 형성하는 단계를 포함한다.
Abstract translation: 目的：提供凸块形成方法以容易地实现高密度和高纵横比，并且通过最小化由于芯片和基板之间的热膨胀系数引起的应力来简化制造工艺。 构成：在具有输入和输出焊盘（22）的半导体衬底（21）上形成保护层（23）。 在保护层（23）上依次形成UBM（球状冶金）（24）和镀膜。 通过使用光致抗蚀剂图案作为掩模的喷雾法的湿式蚀刻或干蚀刻，顺序地对镀层和UBM（24）进行图案化。 在镀层上涂布树脂焊剂后，树脂焊剂在氮气气氛中回流，从而形成凸块（25a）。
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公开(公告)号：KR1020020093297A
公开(公告)日：2002-12-16
申请号：KR1020010031991
申请日：2001-06-08
Applicant: 한국전자통신연구원
IPC: C25D17/02
Abstract: PURPOSE: An electroplating apparatus with a cathode electrode is provided to achieve high uniformity and efficiency of electroplating by improving structure of the cathode electrode and plating cup, thereby solving nonuniformed plating problems and suppressing deterioration of plating speed. CONSTITUTION: In an electroplating apparatus comprising a plating cup(20) for plating a wafer by flowing type plating, a head for sealing the plating cup, and an anode electrode plate for impressing a plus power source to the wafer(22), the electroplating apparatus comprises a cathode electrode plate(21) comprising a ring(21e) which is received in the plating cup with spaced apart from the bottom surface of the plating cup in a certain distance, and with which the wafer is contacted at a position that is lower than the upper surface of the plating cup, wherein the electroplating apparatus further comprises a plating solution circulating passageway(20a) which is installed at the outer side of the plating cup to circulate the plating solution contacted with the wafer to the outside, diameter of the plating cup is larger than that of the wafer, and the cathode electrode plate comprises a cylinder part(21a); a flange part(21b) that is extended from the upper surface of the cylinder part to the outer side; a bottom part(21c) that is extended from the lower surface of the cylinder part to the inner side; and a protrusion part(21d) that is extended from the bottom part to an upper surface direction of the cylinder part with the protrusion part spaced apart from the inner circumferential surface of the cylinder part in a certain distance, wherein the ring(21e) is expanded and formed on the protrusion part.
Abstract translation: 目的：提供具有阴极电极的电镀装置，通过改善阴极和电镀杯的结构来实现电镀的高均匀性和效率，从而解决不均匀电镀问题并抑制电镀速度的劣化。 构成：在电镀设备中，包括用于通过流动电镀电镀晶片的电镀杯（20），用于密封电镀杯的头和用于将正电源施加到晶片（22）的阳极电极板，电镀 装置包括阴极电极板（21），其包括环（21e），所述环（21e）被接收在电镀杯中，与电镀杯的底表面间隔开一定距离，并且晶片在 低于电镀杯的上表面，其中所述电镀装置还包括电镀液循环通道（20a），所述电镀液循环通道（20a）安装在所述电镀杯的外侧，以将与所述晶片接触的电镀溶液循环到外部， 电镀杯大于晶片的电镀杯，阴极电极板包括圆筒部分（21a）; 凸缘部（21b），其从所述气缸部的上表面延伸到外侧; 底部（21c），其从所述气缸部的下表面延伸到所述内侧; 以及突出部（21d），其从所述圆筒部的底部延伸到上表面方向，其中所述突出部与所述圆筒部的内周面间隔开一定距离，其中，所述环（21e）为 在突起部分上膨胀并形成。
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公开(公告)号：KR1020020092041A
公开(公告)日：2002-12-11
申请号：KR1020010030893
申请日：2001-06-01
Applicant: 한국전자통신연구원
IPC: H01L21/60
CPC classification number: H01L2224/11 , H01L2224/1146 , H01L2224/11614 , H01L2224/11622 , H01L2224/11849 , H01L2224/13 , H01L2224/13099 , H01L2924/01078 , H01L2924/00012
Abstract: PURPOSE: A bump formation method is provided to easily achieve a high density and a high aspect ration and to simplify manufacturing processes by minimizing a stress due to a thermal expansive coefficient between a chip and a substrate. CONSTITUTION: A protection layer(23) is formed on a semiconductor substrate(21) having an input and an output pad(22). An UBM(Under Ball Metallurgy)(24) and a plating film are sequentially formed on the protection layer(23). The plating layer and the UBM(24) are sequentially patterned by wet-etching or dry-etching of spray method using a photoresist pattern as a mask. After coating a resin flux on the plating layer, the resin flux reflows in nitrogen atmosphere, thereby forming a bump(25a).
Abstract translation: 目的：提供凸块形成方法以容易地实现高密度和高纵横比，并且通过最小化由于芯片和基板之间的热膨胀系数引起的应力来简化制造工艺。 构成：在具有输入和输出焊盘（22）的半导体衬底（21）上形成保护层（23）。 在保护层（23）上依次形成UBM（球状冶金）（24）和镀膜。 通过使用光致抗蚀剂图案作为掩模的喷雾法的湿式蚀刻或干蚀刻，顺序地对镀层和UBM（24）进行图案化。 在镀层上涂布树脂焊剂后，树脂焊剂在氮气气氛中回流，从而形成凸块（25a）。
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公开(公告)号：KR1020020054112A
公开(公告)日：2002-07-06
申请号：KR1020000082807
申请日：2000-12-27
Applicant: 한국전자통신연구원
IPC: H01L23/00
Abstract: PURPOSE: A method for fabricating a multichip module(MCM) substrate having a passive device is provided to reduce the size of the MCM substrate and to increase a signal rate of an MCM, by increasing interconnection density of the MCM substrate. CONSTITUTION: The first metal layer as a power layer, the second metal layer(114) and the third metal layer are sequentially formed on a base substrate of the MCM substrate. A capacitor and a resistor are formed between the power layer and the second metal layer in the same process. The resistor is made of NiCr. The power layer, the second metal layer and the third metal are stack structures composed of a seed metal layer and a main metal layer.
Abstract translation: 目的：提供一种用于制造具有无源器件的多芯片模块（MCM）衬底的方法，以通过增加MCM衬底的互连密度来减小MCM衬底的尺寸并增加MCM的信号速率。 构成：作为功率层的第一金属层，第二金属层（114）和第三金属层依次形成在MCM基板的基底基板上。 在同一工艺中，在功率层和第二金属层之间形成电容器和电阻器。 电阻由NiCr制成。 功率层，第二金属层和第三金属是由种子金属层和主金属层构成的堆叠结构。
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