公开(公告)号：KR1020140138523A

公开(公告)日：2014-12-04

申请号：KR1020130099082

申请日：2013-08-21

Applicant: 한국전자통신연구원

Inventor： 김경옥 ,  박현대 ,  김인규 ,  김상훈 ,  장기석 ,  김상기 ,  주지호 ,  최용석 ,  권혁제 ,  박재규 ,  김선애 ,  오진혁 ,  곽명준

IPC: G02B6/12 ,  G02B6/42

CPC classification number: G02B6/43 ,  G02B6/12007 ,  G02B6/30 ,  H01L33/0075

Abstract: 본 발명은 광 입출력 장치, 및 그를 구비한 광 전자 시스템을 개시한다. 상기 장치는, 벌크 실리콘 기판, 벌크 실리콘 기판의 일측 상에 단일 집적된 수직 입사형 광검출 소자, 상기 수직 입사형 광검출 소자에 인접되는 상기 벌크 실리콘 기판 상의 타측 상에 단일 집적된 수직 출력형 광원 소자를 포함한다. 수직 출력형 광원 소자는 웨이퍼 본딩에 의해 실리콘 기판 상에 결합되어 형성되는 III-V족 화합물 반도체 광원 활성층을 포함할 수 있다.

Abstract translation: 本发明涉及一种光学I / O设备和包括该光学I / O设备的光学电子系统。 该器件包括：体硅衬底; 一个垂直入射型光电检测元件，集成在一块硅衬底上; 以及集成在与所述垂直入射型光检测元件相邻的所述体硅基板的另一侧上的垂直输出光源元件。 垂直输出光源元件可以包括通过晶片接合耦合到硅衬底的III-V族化学半导体光源激活层。

公开(公告)号：KR1020140108437A

公开(公告)日：2014-09-11

申请号：KR1020130021452

申请日：2013-02-27

Applicant: 한국전자통신연구원

Inventor： 주지호

IPC: G02B6/12 ,  G02B6/10

CPC classification number: H05K3/4697 ,  G02B6/4279 ,  H01L23/13 ,  H01L24/48 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/15153 ,  H01L2924/15787 ,  H05K1/0206 ,  H05K1/0243 ,  H05K1/0306 ,  H05K3/3431 ,  H05K2201/0191 ,  H05K2201/09845 ,  H05K2201/10121 ,  H05K2201/10189 ,  H05K2201/10272 ,  H05K2201/10287 ,  Y10T29/49117 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An optical receiver module according to the present invention comprises: a ceramic substrate formed by laminating a plurality of metal layers and a plurality of ceramic layers; a high-frequency transmission line formed on the ceramic substrate to transmit a high-frequency electrical signal; a photodetector mounted on the ceramic substrate to convert a light signal into the high-frequency electrical signal; a power supply line which supplies DC power to the photodetector; and a high-frequency connector connected to the high-frequency transmission line to transmit the high-frequency electrical signal to the outside, wherein the photodetector is mounted on a stepped part processed in the ceramic substrate, and the height of connection points of each of the photodetector and the high-frequency transmission line is corrected by the stepped part. According to an embodiment of the present invention, the high-speed optical receiver module and the method for manufacturing the same can simplify manufacturing processes using a ceramic substrate which can be manufactured in a lamination structure and can improve high-speed transmission characteristics.

Abstract translation: 根据本发明的光接收器模块包括：通过层叠多个金属层和多个陶瓷层而形成的陶瓷基板; 形成在所述陶瓷基板上的用于发送高频电信号的高频传输线; 安装在所述陶瓷基板上以将光信号转换成高频电信号的光电探测器; 向光检测器供给直流电的电源线; 连接到高频传输线的高频连接器将高频电信号传送到外部，其中光电检测器安装在陶瓷基板上加工的阶梯部分上，并且每个连接点的高度 光电检测器和高频传输线由阶梯部分校正。 根据本发明的实施例，高速光接收模块及其制造方法可以简化使用能够以叠层结构制造的陶瓷基板的制造工艺，并且可以提高高速传输特性。

公开(公告)号：KR1020130069116A

公开(公告)日：2013-06-26

申请号：KR1020110136674

申请日：2011-12-16

Applicant: 한국전자통신연구원

Inventor： 김인규 ,  김경옥 ,  김상훈 ,  주지호 ,  장기석

IPC: H01S5/10

CPC classification number: H01S5/021 ,  H01S3/0637 ,  H01S5/0205 ,  H01S5/026 ,  H01S5/028 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/2272 ,  H01S5/3027

Abstract: PURPOSE: A semiconductor laser and a manufacturing method thereof are provided to grow a laser gain medium on a semiconductor substrate by a selective epitaxy method, thereby manufacturing the semiconductor laser without cutting or polishing both sides of a Fabry-Perot cavity. CONSTITUTION: A germanium monocrystal Fabry-Perot cavity is grown on a substrate by a selective epitaxy method. A spacer(31) is separated from one side of the Fabry-Perot cavity. An optical coupler(33) is separated from the other end of the Fabry-Perot cavity. The height of the top surface of the Fabry-Perot cavity is different from the height of the spacer or the optical coupler.

Abstract translation: 目的：提供一种半导体激光器及其制造方法，以通过选择性外延法在半导体衬底上生长激光增益介质，从而制造半导体激光器而不切割或抛光法布里 - 珀罗腔的两侧。 构成：通过选择性外延法在基底上生长锗单晶法布里 - 珀罗腔。 间隔物（31）从法布里 - 珀罗腔的一侧分离。 光耦合器（33）与法布里 - 珀罗腔的另一端分离。 法布里 - 珀罗腔的上表面的高度不同于间隔物或光耦合器的高度。

公开(公告)号：KR1020100046381A

公开(公告)日：2010-05-07

申请号：KR1020080105199

申请日：2008-10-27

Applicant: 한국전자통신연구원

Inventor： 서동우 ,  김상훈 ,  김경옥 ,  주지호

IPC: H01L31/028 ,  H01L27/04 ,  H01L31/18 ,  H01L27/14

CPC classification number: H01L31/028 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667 ,  H01L31/103 ,  H01L31/1808 ,  H01L31/1872 ,  Y02E10/50 ,  Y02P70/521

Abstract: PURPOSE: In germanium light detector and a method of formation thereof is the low vacuum state, the germanium epitaxial layer is formed without the buffer layer and annealing process. The substrate and process cost relatively offer the cheap germanium light detector. CONSTITUTION: A first doped layer(110) is formed on the substrate(100). An amorphous germanium layer(121) is formed on the first doped layer. The amorphous germanium layer is crystallized in the warming process. The germanium epitaxial layer(130) is formed on the crystallized germanium layer as described above. The second doped layer is formed on the germanium epitaxial layer.

Abstract translation: 目的：在锗光检测器中，其形成方法为低真空状态，锗外延层形成无缓冲层和退火过程。 基板和工艺成本相对提供便宜的锗光检测器。 构成：在衬底（100）上形成第一掺杂层（110）。 在第一掺杂层上形成无定形锗层（121）。 无定形锗层在加热过程中结晶。 如上所述，在结晶的锗层上形成锗外延层（130）。 第二掺杂层形成在锗外延层上。