DECABORANE VAPORIZER HAVING IMPROVED VAPOR FLOW
    41.
    发明申请
    DECABORANE VAPORIZER HAVING IMPROVED VAPOR FLOW 审中-公开
    具有改进蒸汽流量的DECABORANE VAPORIZER

    公开(公告)号:WO2003015119A2

    公开(公告)日:2003-02-20

    申请号:PCT/US2002/025086

    申请日:2002-08-07

    CPC classification number: H01J27/08

    Abstract: An ion source for an ion implanter is provided, comprising: (i) a sublimator (52) having a cavity (66) for receiving a source material (68) to be sublimated and for sublimating the source material; (ii) a gas injector (104) for injecting gas into the cavity (66); (iii) an ionization chamber (58) for ionizing the sublimated source material, the ionization chamber located remotely from the sublimator; and (iv) a feed tube (62) for connecting the sublimator (52) to the ionization chamber (58). The gas injected into the cavity may be either helium or hydrogen, and is designed to improve the heat transferability between walls (64) of the sublimator (52) and the source material (68).

    Abstract translation: 提供了一种用于离子注入机的离子源,包括:(i)升华器(52),具有用于接收待升华的源材料并升华所述源材料的腔体(66) (ii)用于将气体注入到空腔(66)中的气体注入器(104); (iii)电离室(58),用于使升华的源材料离子化,远离升华器的离子化室; 和(iv)用于将升华器(52)连接到电离室(58)的进料管(62)。 注入空腔中的气体可以是氦气或氢气,并且被设计成改善升华器(52)的壁(64)和源材料(68)之间的热传递性。

    PLASMA ELECTRON FLOOD FOR ION BEAM IMPLANTER
    42.
    发明公开
    PLASMA ELECTRON FLOOD FOR ION BEAM IMPLANTER 审中-公开
    等离子体电子流FOR A离子注入机

    公开(公告)号:EP2206137A1

    公开(公告)日:2010-07-14

    申请号:EP08847752.6

    申请日:2008-11-06

    Abstract: A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.

    THROUGHPUT ENHANCEMENT FOR SCANNED BEAM ION IMPLANTERS
    43.
    发明公开
    THROUGHPUT ENHANCEMENT FOR SCANNED BEAM ION IMPLANTERS 审中-公开
    吞吐量增加IONENIMPLANTATOREN的采样BEAM

    公开(公告)号:EP2054916A2

    公开(公告)日:2009-05-06

    申请号:EP07811293.5

    申请日:2007-08-13

    Abstract: An ion implantation system that optimizes productivity that includes an ion generator configured to implant ions into a workpiece (105) by scanning the ions (110) along an axis (142) in a first direction, a movable stage (140) configured to move the workpiece in a second direction (144) different from the first direction and a first direction driver that receives commands from a controller to move in a fast scan speed on wafer and a fast scan speed off wafer. The fast scan speed off wafer is different, preferably faster, than the fast scan speed on wafer.

    THIN MAGNETRON STRUCTURES FOR PLASMA GENERATION IN ION IMPLANTATION SYSTEMS
    44.
    发明公开
    THIN MAGNETRON STRUCTURES FOR PLASMA GENERATION IN ION IMPLANTATION SYSTEMS 审中-公开
    薄MAGNETRONSTRUKTUREN FOR离子注入系统产生等离子体

    公开(公告)号:EP1636820A2

    公开(公告)日:2006-03-22

    申请号:EP04755633.7

    申请日:2004-06-18

    Abstract: A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.

    APPARATUS FOR MEASUREMENT OF BEAM ANGLE IN ION IMPLANTATION
    45.
    发明授权
    APPARATUS FOR MEASUREMENT OF BEAM ANGLE IN ION IMPLANTATION 有权
    DEVICE梁角度测量离子注入

    公开(公告)号:EP2304765B1

    公开(公告)日:2012-07-04

    申请号:EP09788820.0

    申请日:2009-06-23

    Abstract: An ion beam angle detection apparatus (440), comprising a linear drive assembly (460) fixedly attached to a moveable profiler assembly (450), wherein the profiler assembly comprises, a profiler having a profiler aperture (454) formed within a profiler top plate (455) and a profiler sensor assembly, a moveable angle mask assembly (446) comprising a moveable angle mask with a mask aperture (448), wherein the angle mask assembly is non-fixedly attached to the profiler assembly, the mask aperture is movable relative to the profiler aperture by energizing an mask linear drive (464) fixedly attached to the profiler assembly and the profiler aperture is movable through a length greater than the elongated length of the ion beam (456).

    ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY
    47.
    发明公开
    ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY 审中-公开
    离子注入均匀性的离子束扫描控制方法和系统

    公开(公告)号:EP2084729A2

    公开(公告)日:2009-08-05

    申请号:EP07775043.8

    申请日:2007-04-10

    Abstract: One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.

    Abstract translation: 本发明的一个实施例涉及用于调节扫描离子束的带状束通量的方法。 在该方法中,以扫描速率扫描离子束,并且在扫描离子束时测量多个动态射束轮廓。 基于扫描光束的多个测量的动态光束轮廓来计算校正的扫描速率。 以校正的扫描速率扫描离子束以产生经校正的带状离子束。 其他方法和系统也被公开。

    SYSTEM AND MAGNETIC SCANNING AND CORRECTION OF AN ION BEAM
    48.
    发明公开
    SYSTEM AND MAGNETIC SCANNING AND CORRECTION OF AN ION BEAM 审中-公开
    SYSTEM FOR磁检测和校正离子束

    公开(公告)号:EP2064728A2

    公开(公告)日:2009-06-03

    申请号:EP07838158.9

    申请日:2007-09-13

    Abstract: A magnetic scanner (400) employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece (402) and a lower pole piece (404) that generate an oscillatory time varying magnetic field across a path of an ion beam (406) and deflect the ion beam in a scan direction. A set of entrance magnets (410a, b) are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets (412a, b) are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam. The scanner (400) may also include cusp magnets (414, 416), mitigate the loss of electrons within the scanner.

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