Abstract:
An ion source for an ion implanter is provided, comprising: (i) a sublimator (52) having a cavity (66) for receiving a source material (68) to be sublimated and for sublimating the source material; (ii) a gas injector (104) for injecting gas into the cavity (66); (iii) an ionization chamber (58) for ionizing the sublimated source material, the ionization chamber located remotely from the sublimator; and (iv) a feed tube (62) for connecting the sublimator (52) to the ionization chamber (58). The gas injected into the cavity may be either helium or hydrogen, and is designed to improve the heat transferability between walls (64) of the sublimator (52) and the source material (68).
Abstract:
A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.
Abstract:
An ion implantation system that optimizes productivity that includes an ion generator configured to implant ions into a workpiece (105) by scanning the ions (110) along an axis (142) in a first direction, a movable stage (140) configured to move the workpiece in a second direction (144) different from the first direction and a first direction driver that receives commands from a controller to move in a fast scan speed on wafer and a fast scan speed off wafer. The fast scan speed off wafer is different, preferably faster, than the fast scan speed on wafer.
Abstract:
A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.
Abstract:
An ion beam angle detection apparatus (440), comprising a linear drive assembly (460) fixedly attached to a moveable profiler assembly (450), wherein the profiler assembly comprises, a profiler having a profiler aperture (454) formed within a profiler top plate (455) and a profiler sensor assembly, a moveable angle mask assembly (446) comprising a moveable angle mask with a mask aperture (448), wherein the angle mask assembly is non-fixedly attached to the profiler assembly, the mask aperture is movable relative to the profiler aperture by energizing an mask linear drive (464) fixedly attached to the profiler assembly and the profiler aperture is movable through a length greater than the elongated length of the ion beam (456).
Abstract:
An ion beam angle detection apparatus (440), comprising a linear drive assembly (460) fixedly attached to a moveable profiler assembly (450), wherein the profiler assembly comprises, a profiler having a profiler aperture (454) formed within a profiler top plate (455) and a profiler sensor assembly, a moveable angle mask assembly (446) comprising a moveable angle mask with a mask aperture (448), wherein the angle mask assembly is non-fixedly attached to the profiler assembly, the mask aperture is movable relative to the profiler aperture by energizing an mask linear drive (464) fixedly attached to the profiler assembly and the profiler aperture is movable through a length greater than the elongated length of the ion beam (456).
Abstract:
One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.
Abstract:
A magnetic scanner (400) employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece (402) and a lower pole piece (404) that generate an oscillatory time varying magnetic field across a path of an ion beam (406) and deflect the ion beam in a scan direction. A set of entrance magnets (410a, b) are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets (412a, b) are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam. The scanner (400) may also include cusp magnets (414, 416), mitigate the loss of electrons within the scanner.