公开(公告)号：WO2010008469A2

公开(公告)日：2010-01-21

申请号：PCT/US2009/003742

申请日：2009-06-23

Applicant: AXCELIS TECHNOLOGIES, INC. ,  SATOH, Shu ,  SIERADSKI, Manny ,  EISNER, Edward

Inventor： SATOH, Shu ,  SIERADSKI, Manny ,  EISNER, Edward

IPC: H01J27/02 ,  H01J27/00

CPC classification number: H01J37/05 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/057 ,  H01J2237/24507 ,  H01J2237/24542 ,  H01J2237/24578 ,  H01J2237/31703

Abstract: An ion beam uniformity control system, wherein the uniformity control system comprising a differential pumping chamber that encloses an array of individually controlled gas jets, wherein the gas pressure of the individually controlled gas jets are powered by a controller to change the fraction of charge exchanged ions, and wherein the charge exchange reactions between the gas and ions change the fraction of the ions with original charge state of a broad ion beam, wherein the charge exchanged portion of the broad ion beam is removed utilizing an deflector that generates a magnetic field, a Faraday cup profiler for measuring the broad ion beam profile; and adjusting the individually controlled gas jets based upon feedback provided to the controller to obtain the desired broad ion beam.

Abstract translation: 一种离子束均匀性控制系统，其中所述均匀性控制系统包括包围独立控制的气体射流阵列的差分泵送室，其中单独控制的气体射流的气体压力由控制器供电以改变电荷交换离子的分数 并且其中气体和离子之间的电荷交换反应改变具有宽离子束的原始电荷状态的离子的分数，其中使用产生磁场的偏转器去除宽离子束的电荷交换部分， 用于测量宽离子束剖面的法拉第杯分析仪; 以及基于提供给控制器的反馈来调节单独控制的气体射流，以获得所需的宽离子束。

公开(公告)号：WO2016106425A2

公开(公告)日：2016-06-30

申请号：PCT/US2015/067730

申请日：2015-12-28

Applicant: AXCELIS TECHNOLOGIES, INC.

Inventor： EISNER, Edward

IPC: H01J37/147 ,  H01J37/317

CPC classification number: H01J37/141 ,  H01J37/05 ,  H01J37/08 ,  H01J37/1472 ,  H01J37/1475 ,  H01J37/3171 ,  H01J2237/04922 ,  H01J2237/1415 ,  H01J2237/152

Abstract: A combined scanning and focusing magnet for an ion implantation system is provided. The combined scanning and focusing magnet has a yoke having a high magnetic permeability. The yoke defines a hole configured to pass an ion beam therethrough. One or more scanner coiis operabiy are coupled to the yoke and configured to generate a time-varying predominantly dipole magnetic field when electrically coupled to a power supply. One or more focusing coils are operabiy coupled to the yoke and configured to generate a predominantly muitipo!e magnetic field, wherein the predominantly multipoie magnetic field is one of static or time-varying.

Abstract translation: 提供了用于离子注入系统的组合扫描和聚焦磁体。 组合的扫描和聚焦磁体具有磁导率高的磁轭。 轭限定了构造成使离子束通过其中的孔。 一个或多个扫描器可操作地耦合到磁轭并且被配置为当电耦合到电源时产生随时间变化的主要偶极磁场。 一个或多个聚焦线圈可操作地耦合到磁轭并且被配置为产生主要的多重磁场，其中主要是多余磁场是静态或时变之一。

公开(公告)号：WO2013089807A1

公开(公告)日：2013-06-20

申请号：PCT/US2012/000575

申请日：2012-12-13

Applicant: AXCELIS TECHNOLOGIES, INC. ,  EISNER, Edward ,  VANDERBERG, Bo

Inventor： EISNER, Edward ,  VANDERBERG, Bo

IPC: H01J37/317 ,  H01J37/244 ,  H01J37/304

CPC classification number: H01J37/3171 ,  H01J37/244 ,  H01J37/304 ,  H01J2237/15 ,  H01J2237/24405 ,  H01J2237/24514 ,  H01J2237/31703

Abstract: A scanning system including a scanning element, a beam profiler, analysis system, and a ZFE-limiting element, is disclosed. The scanning element is configured to scan an ion beam over an ion beam scan path. The beam profiler measures beam current of the ion beam as it is scanned over the ion beam scan path, and the analysis system analyzes the measured beam current to detect a ZFE condition. The ZFE-limiting element, which is upstream of the beam profiler and is coupled to the analysis system via a feedback path, is configured to selectively apply an electric field to the scanned ion beam based on whether the ZFE condition is detected. The selectively applied electric field induces a change in the scanned beam to limit the ZFE condition.

Abstract translation: 公开了一种包括扫描元件，光束轮廓仪，分析系统和ZFE限制元件的扫描系统。 扫描元件被配置为在离子束扫描路径上扫描离子束。 光束轮廓仪在离子束扫描路径上扫描时测量离子束的束电流，分析系统分析测量的束电流以检测ZFE条件。 ZFE限制元件，其在光束轮廓仪的上游并且经由反馈路径耦合到分析系统，被配置为基于是否检测到ZFE条件来选择性地向扫描的离子束施加电场。 选择性施加的电场引起扫描光束的变化以限制ZFE条件。

公开(公告)号：WO2012134600A1

公开(公告)日：2012-10-04

申请号：PCT/US2012/000178

申请日：2012-03-29

Applicant: AXCELIS TECHNOLOGIES, INC. ,  EISNER, Edward ,  RAY, Andy ,  VANDERBERG, Bo

Inventor： EISNER, Edward ,  RAY, Andy ,  VANDERBERG, Bo

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J37/3171 ,  G21K5/02 ,  G21K5/04 ,  G21K5/10 ,  H01J37/302 ,  H01J2237/30483

Abstract: One embodiment relates to an ion implanter. The ion implanter includes an ion source to generate an ion beam, as well as a scanner to scan the ion beam across a surface of a workpiece along a first axis. The ion implanter also includes a deflection filter downstream of the scanner to ditheredly scan the ion beam across the surface of the workpiece along a second axis.

Abstract translation: 一个实施例涉及一种离子注入机。 离子注入机包括用于产生离子束的离子源以及沿着第一轴沿着工件的表面扫描离子束的扫描仪。 离子注入机还包括在扫描器下游的偏转滤波器，以沿着第二轴度将离子束沿工件的表面抖动扫描。

公开(公告)号：WO2008021334A2

公开(公告)日：2008-02-21

申请号：PCT/US2007/017935

申请日：2007-08-13

Applicant: AXCELIS TECHNOLOGIES, INC. ,  EISNER, Edward ,  VANDERBERG, Bo

Inventor： EISNER, Edward ,  VANDERBERG, Bo

CPC classification number: H01J37/3171 ,  H01J37/1474 ,  H01J37/3023 ,  H01J2237/30488

Abstract: An ion implantation system that optimizes productivity that includes an ion generator configured to implant ions into a workpiece by scanning the ions along an axis in a first direction, a movable stage configured to move the workpiece in a second direction generally orthogonal to the first direction, an ion detection component configured to measure ion dosage at approximately an outer edge of the workpiece, a first direction driver that receives commands from the controller to move in a fast scan speed on wafer or a fast scan speed off wafer and a second direction driver that receives commands from the controller to move the workpiece movable stage in a slow scan speed.

Abstract translation: 一种离子植入系统，其优化生产率，其包括离子发生器，其被配置为通过沿着第一方向的轴扫描离子将离子注入到工件中;可移动台，被配置为沿大致垂直于所述第一方向的第二方向移动所述工件， 离子检测部件，被配置为测量在工件的大致外边缘处的离子剂量;第一方向驱动器，其接收来自控制器的命令以晶片上的快速扫描速度移动或离开晶片的快速扫描速度;以及第二方向驱动器， 从控制器接收命令，以缓慢的扫描速度移动工件移动台。

公开(公告)号：WO2012134601A1

公开(公告)日：2012-10-04

申请号：PCT/US2012/000179

申请日：2012-03-29

Applicant: AXCELIS TECHNOLOGIES, INC. ,  EISNER, Edward

Inventor： EISNER, Edward

IPC: H01J37/302 ,  H01J37/317

CPC classification number: H01J3/14 ,  G21K5/10 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/049 ,  H01J2237/30477 ,  H01J2237/30483

Abstract: The present invention relates to a method and apparatus for varying the cross - sectional shape (308a, 308b, 308c) of an ion beam, as the ion beam is scanned over the surface of a workpiece (304), to generate a time - averaged ion beam having an improved ion beam current profile uniformity. In one embodiment, the cross - sectional shape of an ion beam is varied as the ion beam moves across the surface of the workpiece. The different cross - sectional shapes of the ion beam respectively have different beam profiles (e.g., having peaks at different locations along the beam profile), so that rapidly changing the cross - sectional shape of the ion beam results in a smoothing of the beam current profile (e.g., reduction of peaks associated with individual beam profiles) that the workpiece is exposed to. The resulting smoothed beam current profile provides for improved uniformity of the beam current and improved workpiece dose uniformity.

Abstract translation: 本发明涉及一种用于当离子束扫描在工件（304）的表面上时改变离子束的横截面形状（308a，308b，308c）的方法和装置，以产生时间平均 具有改进的离子束电流分布均匀性的离子束。 在一个实施例中，离子束的横截面形状随着离子束移动穿过工件的表面而变化。 离子束的不同横截面形状分别具有不同的光束轮廓（例如，沿着光束轮廓在不同位置处具有峰值），使得快速改变离子束的横截面形状导致光束电流的平滑 工件暴露于的轮廓（例如，减小与各个梁轮廓相关联的峰）。 所得到的平滑光束电流分布提供了改进的束电流均匀性和改进的工件剂量均匀性。

公开(公告)号：WO2010080097A1

公开(公告)日：2010-07-15

申请号：PCT/US2009/006481

申请日：2009-12-10

Applicant: AXCELIS TECHNOLOGIES, INC. ,  EISNER, Edward

Inventor： EISNER, Edward

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J2237/1538 ,  H01J2237/24542 ,  H01J2237/30472

Abstract: Ion implantation systems (110) and scanning systems are provided, in which a focus adjustment component (135) is provided to adjust a focal property of an ion beam (124) to diminish zero field effects of the scanner (136) upon the ion beam. The focal property may be adjusted in order to improve the consistency of the beam profile scanned across the workpiece (130), or to improve the consistency of the ion implantation across the workpiece (130). Methods are disclosed for providing a scanned ion beam to a workpiece, comprising scanning the ion beam to produce a scanned ion beam, adjusting a focal property of an ion beam in relation to zero field effects of the scanner upon the ion beam, and directing the ion beam toward the workpiece.

Abstract translation: 提供离子注入系统（110）和扫描系统，其中提供聚焦调节部件（135）以调节离子束（124）的聚焦特性，以减少扫描仪（136）对离子束的零场效应 。 可以调整焦点特性以便改善在工件（130）上扫描的光束轮廓的一致性，或者提高穿过工件（130）的离子注入的一致性。 公开了用于向工件提供扫描离子束的方法，包括扫描离子束以产生扫描离子束，相对于扫描仪对离子束的零场效应调整离子束的聚焦特性，并引导 离子束朝向工件。

公开(公告)号：WO2009131693A1

公开(公告)日：2009-10-29

申请号：PCT/US2009/002521

申请日：2009-04-23

Applicant: AXCELIS TECHNOLOGIES, INC. ,  TIEGER, Daniel ,  DIVERGILIO, William ,  EISNER, Edward ,  GRAF, Michael

Inventor： TIEGER, Daniel ,  DIVERGILIO, William ,  EISNER, Edward ,  GRAF, Michael

IPC: H01J37/09 ,  H01J37/317 ,  H01J27/00 ,  H01J27/08

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/061 ,  H01J2237/0835

Abstract: An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture (340, 342) of desired characteristics covers an ionization region of the arc chamber. In one embodiment, a movable ion extraction aperture plate (310) is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures (340, 342) and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.

Abstract translation: 一种离子注入机系统，包括用于产生离子流或离子束的离子源。 离子源具有离子源室壳体，其至少部分地界定电离区域，以在室壳体内产生高浓度的离子浓度。 具有所需特性的离子提取孔（340,342）覆盖电弧室的电离区域。 在一个实施例中，可动离子提取孔板310相对于壳体移动以改变离子束轮廓。 一个实施例包括具有至少细长孔（340,342）的孔板，并且在限定不同离子束轮廓的至少第一和第二位置之间移动。 耦合到孔板的驱动器或致动器使孔板在第一和第二位置之间移动。 一个替代实施例具有两个限定可调节孔的移动板部分。

公开(公告)号：WO2007120623A2

公开(公告)日：2007-10-25

申请号：PCT/US2007/008784

申请日：2007-04-10

Applicant: AXCELIS TECHNOLOGIES, INC. ,  BENVENISTE, Vistor ,  EISNER, Edward ,  VANDERBERG, Bo

Inventor： BENVENISTE, Vistor ,  EISNER, Edward ,  VANDERBERG, Bo

CPC classification number: H01J37/3171 ,  G21K5/04 ,  H01J37/304 ,  H01J2237/24507 ,  H01J2237/3045 ,  H01J2237/30455 ,  H01J2237/31703

Abstract: One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.

Abstract translation: 本发明的一个实施例涉及用于调节扫描离子束的带状束通量的方法。 在该方法中，以扫描速率扫描离子束，并且在扫描离子束时测量多个动态射束轮廓。 基于扫描光束的多个测量的动态光束轮廓来计算校正的扫描速率。 以校正的扫描速率扫描离子束以产生经校正的带状离子束。 其他方法和系统也被公开。

公开(公告)号：WO2007067605A2

公开(公告)日：2007-06-14

申请号：PCT/US2006/046525

申请日：2006-12-06

Applicant: AXCELIS TECHNOLOGIES, INC. ,  EISNER, Edward ,  DIVERGILIO, William

Inventor： EISNER, Edward ,  DIVERGILIO, William

CPC classification number: H01J37/08 ,  H01J37/3171

Abstract: An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.

Abstract translation: 离子注入机包括用于产生沿着光束线移动的离子束的离子源和真空或注入室，其中诸如硅晶片的工件被定位成与离子束相交以离子注入工件的表面 离子束。 离子源包括电离室和限定电离室孔的电离室电极，其中电离室电极包括用于在邻近电离室电极的区域中产生基本均匀的电场的凸起部分。