公开(公告)号：AU2019350989A1

公开(公告)日：2021-03-25

申请号：AU2019350989

申请日：2019-09-27

Applicant: BUTTERFLY NETWORK INC

Inventor： LIU JIANWEI ,  FIFE KEITH G ,  LUTSKY JOSEPH ,  MIAO LINGYUN

IPC: B81B3/00 ,  B81C1/00

Abstract: A method of forming an ultrasound transducer device includes bonding a membrane to a substrate so as to form a sealed cavity between the membrane and the substrate. An exposed surface located within the sealed cavity includes a getter material that is electrically isolated from a bottom electrode of the cavity.

公开(公告)号：AU2019297412A1

公开(公告)日：2021-01-28

申请号：AU2019297412

申请日：2019-07-03

Applicant: BUTTERFLY NETWORK INC

Inventor： LIU JIANWEI ,  FIFE KEITH G

IPC: G01N29/22 ,  A61B8/00

Abstract: Described herein are methods and apparatuses for packaging an ultrasound-on-a-chip. An ultrasound-on-a-chip may be coupled to a redistribution layer and to an interposer layer. Encapsulation may encapsulate the ultrasound-on-a-chip device and first metal pillars may extend through the encapsulation and electrically couple to the redistribution layer. Second metal pillars may extend through the interposer layer. The interposer layer may include aluminum nitride. The first metal pillars may be electrically coupled to the second metal pillars. A printed circuit board may be coupled to the interposer layer.

公开(公告)号：CA2954916C

公开(公告)日：2021-01-05

申请号：CA2954916

申请日：2015-07-14

Applicant: BUTTERFLY NETWORK INC

Inventor： ROTHBERG JONATHAN M ,  ALIE SUSAN A ,  FIFE KEITH G ,  SANCHEZ NEVADA J ,  RALSTON TYLER S

IPC: B81C1/00 ,  B81B3/00 ,  H01L21/00

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities (306) in a substrate (302). Wafer bonding may also be used to bond the substrate (302) to another substrate (304), such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：AU2019263404A1

公开(公告)日：2020-11-19

申请号：AU2019263404

申请日：2019-05-02

Applicant: BUTTERFLY NETWORK INC

Inventor： FIFE KEITH G ,  LIU JIANWEI ,  YANG JUNGWOOK ,  LUTSKY JOSEPH

IPC: H04R7/02 ,  A61B8/00 ,  H04R31/00

Abstract: Micromachined ultrasonic transducers having pressure ports are described. The micromachined ultrasonic transducers may comprise flexible membranes configured to vibrate over a cavity. The cavity may be sealed, in some instances by the membrane itself. A pressure port may provide access to the cavity, and thus control of the cavity pressure. In some embodiments, an ultrasound device including an array of micromachined ultrasonic transducers is provided, with pressure ports for at least some of the ultrasonic transducers. The pressure ports may be used to control pressure across the array.

公开(公告)号：AU2018369882A1

公开(公告)日：2020-05-21

申请号：AU2018369882

申请日：2018-11-15

Applicant: BUTTERFLY NETWORK INC

Inventor： CHEN KAILIANG ,  SANCHEZ NEVADA J ,  ALIE SUSAN ,  RALSTON TYLER S ,  ROTHBERG JONATHAN M ,  FIFE KEITH G ,  LUTSKY JOSEPH

IPC: A61B8/14 ,  H01L23/535

Abstract: Aspects of the technology described herein relate to an ultrasound device including a first die that includes an ultrasonic transducer, a first application- specific integrated circuit (ASIC) that is bonded to the first die and includes a pulser, and a second ASIC in communication with the second ASIC that includes integrated digital receive circuitry. In some embodiments, the first ASIC may be bonded to the second ASIC and the second ASIC may include analog processing circuitry and an analog-to-digital converter. In such embodiments, the second ASIC may include a through-silicon via (TSV) facilitating communication between the first ASIC and the second ASIC. In some embodiments, SERDES circuitry facilitates communication between the first ASIC and the second ASIC and the first ASIC includes analog processing circuitry and an analog-to-digital converter. In some embodiments, the technology node of the first ASIC is different from the technology node of the second ASIC.

公开(公告)号：AU2015289853B2

公开(公告)日：2020-04-23

申请号：AU2015289853

申请日：2015-07-14

Applicant: BUTTERFLY NETWORK INC

Inventor： ROTHBERG JONATHAN M ,  ALIE SUSAN A ,  FIFE KEITH G ,  SANCHEZ NEVADA J ,  RALSTON TYLER S

IPC: B06B1/02

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities (306) in a substrate (302). Wafer bonding may also be used to bond the substrate (302) to another substrate (304), such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：AU2018203942B2

公开(公告)日：2020-03-12

申请号：AU2018203942

申请日：2018-06-04

Applicant: BUTTERFLY NETWORK INC

Inventor： ROTHBERG JONATHAN M ,  FIFE KEITH G ,  RALSTON TYLER S ,  CHARVAT GREGORY L ,  SANCHEZ NEVADA J

IPC: B06B1/02 ,  B81C1/00 ,  G01N29/24

Abstract: An apparatus, comprising: a semiconductor wafer having a complementary metal oxide semiconductor (CMOS) integrated circuit and an electrode; a conductive membrane bonded to the semiconductor wafer to form a bonded structure such that a sealed cavity exists between an uppermost portion of the semiconductor wafer and a first side of the conductive membrane, thereby defining, at least in part, an ultrasonic transducer, with the sealed cavity disposed between the conductive membrane and the electrode; and the uppermost portion of the semiconductor wafer providing an electrical connection between the CMOS integrated circuit and the first side of the conductive membrane. *.. W . . . . . . . . . * ... '64 W W. .

公开(公告)号：CA3098911A1

公开(公告)日：2019-11-07

申请号：CA3098911

申请日：2019-05-02

Applicant: BUTTERFLY NETWORK INC

Inventor： FIFE KEITH G ,  LIU JIANWEI ,  YANG JUNGWOOK ,  LUTSKY JOSEPH

IPC: H04R7/02 ,  A61B8/00 ,  H04R31/00

Abstract: Micromachined ultrasonic transducers having pressure ports are described. The micromachined ultrasonic transducers may comprise flexible membranes configured to vibrate over a cavity. The cavity may be sealed, in some instances by the membrane itself. A pressure port may provide access to the cavity, and thus control of the cavity pressure. In some embodiments, an ultrasound device including an array of micromachined ultrasonic transducers is provided, with pressure ports for at least some of the ultrasonic transducers. The pressure ports may be used to control pressure across the array.

公开(公告)号：AU2018230732A1

公开(公告)日：2019-08-22

申请号：AU2018230732

申请日：2018-03-07

Applicant: BUTTERFLY NETWORK INC

Inventor： ROTHBERG JONATHAN M ,  ALIE SUSAN A ,  FIFE KEITH G ,  SANCHEZ NEVADA J ,  RALSTON TYLER S ,  ZAHORIAN JAIME SCOTT

IPC: B06B1/02 ,  B81B1/00 ,  B81C1/00 ,  B81C3/00 ,  G10K11/18 ,  G10K11/36 ,  H01L21/02

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：AU2018200714B2

公开(公告)日：2019-06-13

申请号：AU2018200714

申请日：2018-01-31

Applicant: BUTTERFLY NETWORK INC

Inventor： ROTHBERG JONATHAN M ,  FIFE KEITH G ,  RALSTON TYLER S ,  CHARVAT GREGORY L ,  SANCHEZ NEVADA J

IPC: G01S7/52 ,  A61B8/14 ,  B06B1/02 ,  B81C1/00 ,  G01S15/02 ,  G01S15/89

Abstract: An ultrasound device, comprising: at least first and second ultrasonic transducer elements; a first transmit control circuit comprising: a first pulser coupled to the first ultrasonic transducer element so as to drive the first ultrasonic transducer element so that the first ultrasonic transducer element emits an ultrasonic pulse; a first waveform generator coupled to the first pulser to provide a first waveform to the first pulser in response to receipt, by the first transmit control circuit, of a transmit enable signal generated by a timing and control circuit; and at least one first component that impacts a length of a first delay between when the first transmit control circuit receives the transmit enable signal and when the first waveform is applied to the first pulser; a second transmit control circuit comprising: a second pulser coupled to the second ultrasonic transducer element so as to drive the second ultrasonic transducer element so that the second ultrasonic transducer element emits an ultrasonic pulse; a second waveform generator coupled to the second pulser to provide a second waveform to the second pulser in response to receipt, by the second transmit control circuit, of the transmit enable signal generated by the timing and control circuit; and at least one second component that impacts a length of a second delay between when the second transmit control circuit receives the transmit enable signal and when the second waveform is applied to the second pulser; wherein the at least one first component is configured differently than the at least one second component, so that the length of the second delay is different than the length of the first delay, and wherein the first and second ultrasonic transducer elements, the first transmit control circuit, and the second transmit control circuit are formed on a single solid state semiconductor die. c-o