公开(公告)号：US20190189850A1

公开(公告)日：2019-06-20

申请号：US16220444

申请日：2018-12-14

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Ying WANG ,  Hui-Chun YEH ,  Li-Ming CHANG ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/32 ,  H01L33/14 ,  H01L33/62 ,  H01L33/20 ,  H01L33/00

CPC classification number: H01L33/38 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/62

Abstract: A light-emitting device, includes a first semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a first electrode formed on the first semiconductor layer; a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode extending from the second pad electrode; a second current blocking region formed under the second electrode, including a second core region under the second pad electrode and a extending region under the second finger electrode; and a transparent conductive layer, formed on the second semiconductor layer and covering the extending region; wherein a contour of the second core region has a shape different from that of the second pad electrode; wherein the transparent conductive layer includes a first opening having a width wider than a width of the second pad electrode, wherein the second finger electrode includes a portion extending from the contour of the second pad electrode and having a width wider than other portion of the second finger electrode, and part of the portion is not covered by the transparent conductive layer.

公开(公告)号：US20190165204A1

公开(公告)日：2019-05-30

申请号：US16196793

申请日：2018-11-20

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HU ,  Wei-Chieh LIEN ,  Chen OU ,  Chia-Ming LIU ,  Tzu-Yi CHI

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/14 ,  H01L33/32 ,  H01L33/12

Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.

公开(公告)号：US20190115500A1

公开(公告)日：2019-04-18

申请号：US16214667

申请日：2018-12-10

Applicant: EPISTAR CORPORATION

Inventor： Chen OU ,  Chiu-Lin YAO

IPC: H01L33/20 ,  H01L33/24 ,  H01L33/32 ,  H01L33/12 ,  H01L33/30 ,  H01L33/22

CPC classification number: H01L33/20 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0091

Abstract: A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting stack formed on the substrate and having an active layer with a first surface substantially parallel to the top surface, wherein one of the plurality of patterned units comprises a plurality of connecting sides constituting a first polygon shape in a top view of the light-emitting device, wherein the one of the plurality of patterned units comprises a vertex and a plurality of inclined surfaces respectively extending from the plurality of connecting sides, the plurality of inclined surfaces commonly joining at the vertex in a cross-sectional view of the light-emitting device, the vertex being between the top surface of the substrate and the first surface of the active layer, and the plurality of inclined surfaces comprises a second polygon shape in the cross-sectional view of the light-emitting device.

公开(公告)号：US20180114880A1

公开(公告)日：2018-04-26

申请号：US15839160

申请日：2017-12-12

Applicant: EPISTAR CORPORATION

Inventor： Tsun-Kai KO ,  Schang-Jing HON ,  Chien-Kai CHUNG ,  Hui-Chun YEH ,  An-Ju LIN ,  Chien-Fu SHEN ,  Chen OU

IPC: H01L33/38 ,  H01L33/06 ,  H01L33/22 ,  H01L33/14

CPC classification number: H01L33/387 ,  H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer and a second conductivity layer, wherein the second conductivity layer comprises a top surface, and in a top view of the semiconductor system, an outline of the first conductivity layer surrounds an outline of the second conductivity layer; a first electrical connector on the first conductivity layer; a second electrical connector comprising a top view shape and directly contacting the second conductivity layer; a contact layer contacting the top surface of the second conductivity layer and having an outer perimeter at an inner side of the outline of the second conductivity layer in the top view of the semiconductor system; and a discontinuous region contacting the top surface of the second conductivity layer, wherein the contact layer covers a top surface and sidewalls of the discontinuous region.

公开(公告)号：US20170271547A1

公开(公告)日：2017-09-21

申请号：US15475817

申请日：2017-03-31

Applicant: EPISTAR CORPORATION

Inventor： Chia Chen TSAI ,  Chen OU ,  Chi Ling LEE ,  Chi Shiang HSU

IPC: H01L33/00 ,  H01L33/62 ,  H01L33/02

CPC classification number: H01L33/0095 ,  H01L21/78 ,  H01L21/784 ,  H01L33/02 ,  H01L33/025 ,  H01L33/20 ,  H01L33/22 ,  H01L33/62

Abstract: A compound semiconductor device comprises a substrate, comprising a top surface, a bottom surface, a side surface connecting the top surface and the bottom surface; and a semiconductor stack formed on the top surface, wherein the side surface comprises a first deteriorated surface, a second deteriorated surface, a first crack surface between the first and second deteriorated surfaces, a second crack surface between the first deteriorated surface and the top surface, and a third crack surface between the second deteriorated surface and the bottom surface, wherein the first and second deteriorated surfaces are rougher than at least one of the first crack surface, the second crack surface and the third crack surface; and wherein the second crack surface is about perpendicular to the top surface, and the third crack surface is about perpendicular to the bottom surface.

公开(公告)号：US20150076536A1

公开(公告)日：2015-03-19

申请号：US14470396

申请日：2014-08-27

Applicant: Epistar Corporation

Inventor： Chen OU ,  Chun-Wei CHANG ,  Chih-Wei WU ,  Sheng-Chih WANG ,  Hsin-Mei TSAI ,  Chia-Chen TSAI ,  Chuan-Cheng CHANG

IPC: H01L27/15 ,  H01L33/42 ,  H01L33/20 ,  H01L33/38

CPC classification number: H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38

Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, and a first trench between the first light-emitting structure and the second light-emitting structure, exposing the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein.

Abstract translation: 发光元件包括在第一半导体层上的第一半导体层，第一发光结构和第二发光结构，第一半导体层上的第一电极，第一发光结构上的第二电极， 以及在所述第一发光结构和所述第二发光结构之间的第一沟槽，暴露所述第一半导体层，其中所述第一沟槽没有形成在所述第一电极和所述第二电极中。

公开(公告)号：US20140034981A1

公开(公告)日：2014-02-06

申请号：US13956746

申请日：2013-08-01

Applicant: Epistar Corporation

Inventor： Kuo-Hsin HUNG ,  Ting-Yu CHEN ,  Chen OU

IPC: H01L33/46

CPC classification number: H01L33/46 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode structure has: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with electrical polarity different from that of the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the second semiconductor layer, wherein the first electrode comprises a contact area and an extension area, and the contact area has a first surface corresponding to the first semiconductor layer and the extension area has a second surface corresponding to the first semiconductor layer, wherein a roughness of the first surface is different from that of the second surface, and the reflectivity of the first surface is smaller than that of the second surface.

Abstract translation: 发光二极管结构具有：基板; 在所述基板上的发光半导体堆叠，其中所述发光半导体堆叠包括第一半导体层，具有与所述第一半导体层的极性不同的电极性的第二半导体层，以及所述第一半导体层之间的发光层 和第二半导体层; 电连接到第一半导体层的第一电极; 以及与所述第二半导体层电连接的第二电极，其中所述第一电极包括接触区域和延伸区域，并且所述接触区域具有对应于所述第一半导体层的第一表面，并且所述延伸区域具有对应于所述第二半导体层的第二表面 第一半导体层，其中第一表面的粗糙度不同于第二表面的粗糙度，并且第一表面的反射率小于第二表面的反射率。

公开(公告)号：US20140017840A1

公开(公告)日：2014-01-16

申请号：US14029297

申请日：2013-09-17

Applicant: EPISTAR CORPORATION

Inventor： Chen OU ,  Wen-Hsiang LIN ,  Shih-Kuo LAI

IPC: H01L33/00

CPC classification number: H01L33/0075 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/12

Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

Abstract translation: 氮化物系发光器件包括基板和在该基板上形成的多个层，其顺序如下：由氮形成的基于氮化物的缓冲层，第一III族元素和任选的第二III族元素， 第一氮化物基半导体层，发光层和第二氮化物基半导体层。