公开(公告)号：DE102004033825B4

公开(公告)日：2009-05-14

申请号：DE102004033825

申请日：2004-07-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  BARTH HANS-JOACHIM

IPC: H01L21/822 ,  H01L21/02 ,  H01L21/768 ,  H01L27/08

Abstract: The invention relates to a method for producing a capacitor arrangement, and to a corresponding capacitor arrangement, wherein the first insulating layer is formed at the surface of a carrier substrate and a first capacitor electrode with a multiplicity of interspaced first interconnects is produced in said insulating layer. Using a mask layer, partial regions of the first insulating layer are removed for the purpose of uncovering the multiplicity of first interconnects, and after the formation of a capacitor dielectric at the surface of the uncovered first interconnects, a second capacitor electrode is formed with a multiplicity of interspaced second interconnects lying between the first interconnects coated with capacitor dielectric. This additionally simplified production method enables self-aligning and cost-effective production of capacitors having a high capacitance per unit area and mechanical stability.

公开(公告)号：DE50015090D1

公开(公告)日：2008-05-21

申请号：DE50015090

申请日：2000-01-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHREMS MARTIN ,  DRESCHER DIRK ,  WURZER HELMUT ,  TEWS HELMUT

IPC: H01L21/00 ,  H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/51

Abstract: A semiconductor element with at least one layer of tungsten oxide, optionally in a structured tungsten oxide layer, is described. The semiconductor element is characterized in that the relative premittivity of the tungsten oxide layer is higher than 50.

公开(公告)号：DE10348007B4

公开(公告)日：2008-04-17

申请号：DE10348007

申请日：2003-10-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/336 ,  H01L21/033 ,  H01L21/308 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

公开(公告)号：DE102004044667A1

公开(公告)日：2006-03-16

申请号：DE102004044667

申请日：2004-09-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  HOLZ JUERGEN ,  SCHRUEFER KLAUS

IPC: H01L29/78 ,  H01L21/336

公开(公告)号：DE102004033825A1

公开(公告)日：2006-02-09

申请号：DE102004033825

申请日：2004-07-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  BARTH HANS-JOACHIM

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/822 ,  H01L27/08

Abstract: The invention relates to a method for producing a capacitor arrangement, and to a corresponding capacitor arrangement, wherein the first insulating layer is formed at the surface of a carrier substrate and a first capacitor electrode with a multiplicity of interspaced first interconnects is produced in said insulating layer. Using a mask layer, partial regions of the first insulating layer are removed for the purpose of uncovering the multiplicity of first interconnects, and after the formation of a capacitor dielectric at the surface of the uncovered first interconnects, a second capacitor electrode is formed with a multiplicity of interspaced second interconnects lying between the first interconnects coated with capacitor dielectric. This additionally simplified production method enables self-aligning and cost-effective production of capacitors having a high capacitance per unit area and mechanical stability.

公开(公告)号：DE10230696B4

公开(公告)日：2005-09-22

申请号：DE10230696

申请日：2002-07-08

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L29/423 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

Abstract: A method for fabricating a short channel field-effect transistor is presented. A sublithographic gate sacrificial layer is formed, as are spacers at the side walls of the gate sacrificial layer. The gate sacrificial layer is removed to form a gate recess and a gate dielectric and a control layer are formed in the gate recess. The result is a short channel field-effect transistor with minimal fluctuations in the critical dimensions in a range below 100 nanometers.

公开(公告)号：DE10348007A1

公开(公告)日：2005-05-25

申请号：DE10348007

申请日：2003-10-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/336 ,  H01L29/423 ,  H01L29/786 ,  H01L29/78

公开(公告)号：DE10348006A1

公开(公告)日：2005-05-25

申请号：DE10348006

申请日：2003-10-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT

IPC: H01L21/8242 ,  H01L27/108

Abstract: A field effect transistor is provided. The field effect transistor includes a channel region, electrically conductive channel connection regions, and a control region. The electrically conductive channel connection regions adjoin the channel region along with a transistor dielectric. The control region is separated from the channel region by the transistor dielectric. In addition, the control region may comprise a monocrystalline material.

公开(公告)号：DE10260234A1

公开(公告)日：2004-07-15

申请号：DE10260234

申请日：2002-12-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/28 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/336

公开(公告)号：AU2003289828A1

公开(公告)日：2004-07-14

申请号：AU2003289828

申请日：2003-12-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEWS HELMUT ,  FEHLHABER RODGER

IPC: H01L21/28 ,  H01L21/8234 ,  H01L21/84 ,  H01L21/336