公开(公告)号：WO2011082371A3

公开(公告)日：2011-11-17

申请号：PCT/US2010062614

申请日：2010-12-30

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI

Inventor： MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI

IPC: H01L21/677 ,  H01L21/683

CPC classification number: H01L21/6833 ,  G03F7/70708 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/6831 ,  H01L21/76251 ,  H01L21/76275 ,  H01L21/76281 ,  H01L21/76879 ,  H02N13/00 ,  Y02P80/30

Abstract: In one embodiment, there is provided a carrier comprising a top semiconductor layer having isolated positive electrode regions and isolated negative electrode regions separated by a frontside trench through the top semiconductor layer at least to an underlying insulating layer positioned between the top semiconductor layer and a bottom semiconductor layer. A dielectric layer covers the top exposed surfaces of the carrier. Backside trenches through the bottom semiconductor layer at least to the insulating layer form isolated backside regions corresponding to the frontside positive and negative electrode regions. Backside contacts positioned on the bottom semiconductor layer and coupled to the positive and negative electrode regions allow for the electric charging of the frontside electrode regions.

Abstract translation: 在一个实施例中，提供了一种载体，其包括顶部半导体层，该顶部半导体层具有隔离的正电极区域和隔离的负电极区域，所述隔离的负电极区域通过顶部半导体层至少分离到位于顶部半导体层和底部 半导体层。 电介质层覆盖载体的顶部暴露表面。 至少通过底部半导体层的背面沟槽至绝缘层形成对应于正面正极和负极区域的隔离的背侧区域。 位于底部半导体层上并且耦合到正极和负极区域的背面触点允许前侧电极区域的电荷。

公开(公告)号：WO2011100647A2

公开(公告)日：2011-08-18

申请号：PCT/US2011024670

申请日：2011-02-12

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  KAPUR PAWAN ,  NAG SOMNATH ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

Inventor： MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  KAPUR PAWAN ,  NAG SOMNATH ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

IPC: H01L31/042 ,  H01L21/20 ,  H01L21/306 ,  H01L31/18

CPC classification number: H01L21/20 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re -usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

Abstract translation: 本公开提供了从可再利用的半导体模板的两侧制造TFSS的制造方法和装置设计，从而有效地增加了基板制造的吞吐量并降低了基板的制造成本。 对于给定数量的模板重用周期，这种方法还将每个制造的衬底（TFSS）的平均起始模板成本降低约2倍。

公开(公告)号：WO2016019396A3

公开(公告)日：2016-04-14

申请号：PCT/US2015043507

申请日：2015-08-03

Applicant: SOLEXEL INC

Inventor： DESHPANDE ANAND ,  TSAI MEGAN ,  SEUTTER SEAN S ,  KAPUR PAWAN ,  MOSLEHI MEHRDAD M

IPC: H01L31/0392 ,  H01L31/04 ,  H01L31/18

CPC classification number: H01L31/1868 ,  H01L31/02167 ,  Y02E10/50 ,  Y02P70/521

Abstract: A surface of a silicon substrate is passivated. A silicon oxide layer is formed on a first surface of a silicon substrate. An aluminum oxide layer is formed on the silicon oxide layer. A hydrogenated amorphous silicon nitride layer is formed on the aluminum oxide layer. A high intensity light source illuminates the silicon surface, the silicon oxide layer, the aluminum oxide layer, and the hydrogenated amorphous silicon nitride layer.

Abstract translation: 硅衬底的表面被钝化。 在硅衬底的第一表面上形成氧化硅层。 在氧化硅层上形成氧化铝层。 在氧化铝层上形成氢化非晶氮化硅层。 高强度光源照射硅表面，氧化硅层，氧化铝层和氢化非晶氮化硅层。

公开(公告)号：WO2014011260A2

公开(公告)日：2014-01-16

申请号：PCT/US2013035029

申请日：2013-04-02

Applicant: SOLEXEL INC

Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  DUTTON DAVID ,  SEUTTER SEAN M ,  CALCATERRA ANTHONY ,  ASHJAEE JAY ,  YONEHARA TAKAO

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/0747 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming back contact solar cells are provided.

Abstract translation: 提供了与太阳能电池的多层金属化有关的制造方法和结构以及用于形成背接触太阳能电池的制造方法和结构。

公开(公告)号：WO2011072153A3

公开(公告)日：2011-11-17

申请号：PCT/US2010059748

申请日：2010-12-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction three dimensional solar cell and methods for manufacturing are provided. The back contact back contact back junction three dimensional solar cell comprises a three-dimensional substrate. The substrate comprises a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer is positioned on the doped backside emitter region. Backside emitter contacts and backside base contacts connected to metal interconnects and selectively formed on three-dimensional features of the backside of three-dimensional solar cell.

Abstract translation: 提供背面接头三维太阳能电池及制造方法。 背面接触背面接合三维太阳能电池包括三维基板。 衬底包括具有钝化层的光捕获前侧表面，掺杂的基极区域和与掺杂的基极区域极性相反的掺杂的背侧发射极区域。 背面钝化层位于掺杂背侧发射极区域上。 连接到金属互连的背面发射极触点和背面底部触点，并且选择性地形成在三维太阳能电池的背面的三维特征上。

公开(公告)号：WO2010057060A2

公开(公告)日：2010-05-20

申请号：PCT/US2009064484

申请日：2009-11-13

Applicant: SOLEXEL INC ,  WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

IPC: H01L29/04 ,  H01L21/306

CPC classification number: H01L31/0236 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0657 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1092

Abstract: Methods and systems for manufacturing thin-film solar cells utilizing a template having inverted pyramidal cavities defined by a plurality of walls aligned along a (111) crystallographic orientation plane and methods for manufacturing the template. Methods and systems for manufacturing thin-film solar cells utilizing a 3-D TFSS having a plurality of ridges on the surface of the semiconductor substrate defining a base opening of an inverted pyramidal cavity and walls defining an inverted pyramidal cavity and methods for manufacturing the 3-D TFSS. A 3-D TFSC comprising a semiconductor substrate with an inverted pyramidal cavity, emitter metallization regions on ridges on the surface of the semiconductor substrate which define an opening of the inverted pyramidal cavity, and base metallization regions on a region which form the apex of the inverted pyramidal cavity and methods for manufacturing the 3-D TFSC.

Abstract translation: 利用具有由沿（111）晶体取向平面排列的多个壁限定的倒金字塔形腔的模板和用于制造模板的方法来制造薄膜太阳能电池的方法和系统。 利用三维TFSS制造薄膜太阳能电池的方法和系统，所述三维TFSS在半导体衬底的表面上具有多个脊，限定倒金字塔形腔的基底开口，并且所述壁限定倒金字塔形腔，以及用于制造3 -D TFSS。 一种三维TFSC，包括具有倒金字塔形腔体的半导体衬底，在所述半导体衬底的表面上的限定所述倒金字塔形腔的开口的脊上的发射极金属化区域以及形成所述倒金字塔形顶点的区域上的基底金属化区域 倒金字塔腔和用于制造3-D TFSC的方法。

公开(公告)号：WO2014179366A8

公开(公告)日：2015-04-16

申请号：PCT/US2014035961

申请日：2014-04-29

Applicant: SOLEXEL INC

Inventor： RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  BENJAMIN RATTLE ,  DESHAZER HEATHER ,  COUTANT SOLENE ,  KOMMERA SWAROOP

IPC: H01L31/18 ,  H01L31/024 ,  H01L31/04

CPC classification number: H01L31/0682 ,  H01L21/268 ,  H01L21/324 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  Y02E10/547

Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。

公开(公告)号：WO2014169292A3

公开(公告)日：2015-01-29

申请号：PCT/US2014034054

申请日：2014-04-14

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M

Inventor： MOSLEHI MEHRDAD M

IPC: H02S40/30 ,  G05F1/67 ,  H02S50/10

CPC classification number: H01L27/1421 ,  H01L31/02021 ,  H01L31/022441 ,  H01L31/044 ,  H01L31/048 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/1896 ,  H02J3/385 ,  H02S40/30 ,  H02S40/32 ,  Y02B10/10 ,  Y02E10/58

Abstract: A solar photovoltaic module laminate for electric power generation is provided. The module comprises a plurality of solar cells embedded within the module laminate and electrically interconnected to form at least one string of electrically interconnected solar cells within said module laminate. And at least one remote-access module switch (RAMS) power electronic circuit embedded within the module laminate electrically interconnected to and powered with said at least one string of electrically interconnected solar cells and serving as a remote-controlled module power delivery gate switch.

Abstract translation: 提供了用于发电的太阳能光伏组件层压板。 模块包括嵌入在模块层叠体内的多个太阳能电池，并且电互连以在所述模块层叠体内形成至少一排电互连的太阳能电池。 并且至少一个远程访问模块开关（RAMS）电力电子电路嵌入在所述模块叠层内，电互连到所述至少一个电互连太阳能电池串并由其供电，并且用作遥控模块电力输送门开关。

公开(公告)号：WO2013055307A3

公开(公告)日：2013-10-24

申请号：PCT/US2011046873

申请日：2011-08-05

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  TOR SAM TONE ,  CALCATERRA ANTHONY

Inventor： MOSLEHI MEHRDAD M ,  WANG DAVID XUAN-QI ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  TOR SAM TONE ,  CALCATERRA ANTHONY

IPC: H01L31/042 ,  H01L31/05 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02008 ,  H01L31/02013 ,  H01L31/022441 ,  H01L31/028 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/50

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, forming electrically conductive emitter plugs and base plugs on the interdigitated pattern, and attaching a backplane having a second interdigitated pattern of base electrodes and emitter electrodes at the conductive emitter and base plugs to form electrical interconnects.

Abstract translation: 描述了与用于背接触太阳能电池的背板相关的制造方法和结构，其提供太阳能电池基底增强和电互连。 该方法包括在半导体衬底的背侧表面上沉积交叉指型的基极和发射极电极图案，在交叉指型图案上形成导电发射极插塞和基极插塞，并将具有第二叉指图案的基极和发射极电极 在导电发射极和基极插头处形成电互连。

公开(公告)号：WO2012040688A3

公开(公告)日：2012-08-16

申请号：PCT/US2011053183

申请日：2011-09-24

Applicant: SOLEXEL INC ,  YONEHARA TAKAO ,  TAMILMANI SUBRAMANIAN ,  KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  MIYAJI YASUHIRO ,  HAYASHI TOKUYUKI ,  INAHARA TAKAMITSU

Inventor： YONEHARA TAKAO ,  TAMILMANI SUBRAMANIAN ,  KRAMER KARL-JOSEF ,  ASHJAEE JAY ,  MOSLEHI MEHRDAD M ,  MIYAJI YASUHIRO ,  HAYASHI TOKUYUKI ,  INAHARA TAKAMITSU

IPC: H01L21/306

CPC classification number: C25F3/12 ,  C25D11/005 ,  C25D11/32 ,  C25D17/001 ,  C25D17/06 ,  C25F7/00

Abstract: This disclosure enables high-productivity fabrication of porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.

Abstract translation: 本公开使得可以高生产率地制造多孔半导体层（由单层或多层多孔半导体制成，例如多孔硅，包括单孔隙或多孔隙层）。 一些应用包括用于管芯分离和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅（使用具有最佳孔隙率及其随后的氧化的多孔硅形成）的MEMS分离和牺牲层的制造。 此外，本公开适用于光伏，MEMS的一般领域，包括传感器和致动器，独立或与集成半导体微电子学，半导体微电子学芯片和光电子集成。