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    Gallium nitride-based semiconductor light-emitting element
    41.
    发明专利
    Gallium nitride-based semiconductor light-emitting element 审中-公开
    基于氮化镓的半导体发光元件

    公开(公告)号：JP2003017808A

    公开(公告)日：2003-01-17

    申请号：JP2001203186

    申请日：2001-07-04

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： ASAZUMA YASUNORI ,  YANASHIMA KATSUNORI ,  NAKAJIMA HIROSHI ,  YAMAGUCHI KYOJI

    IPC: H01S5/22 ,  H01S5/323

    Abstract: PROBLEM TO BE SOLVED: To provide a gallium nitride-based semiconductor light-emitting element, composed of a gallium nitride-based multi-beam semiconductor laser element.
    SOLUTION: The GaN-based multi-beam semiconductor laser element 10 is provided with a GaN-based laminated structure 14 on a stepped substrate 12. The projecting sections 16A and 16B of the substrate 12 respectively have identical height and widths WA and WB, which are narrower than the width WA. On the substrate 12. In concentration in the sections of a GaInN active layer 22 above the projecting sections 16A and 16B becomes lower in the portions near both end sections of the projecting sections 16A and 16B, as compared with the sections of the layer 22 above the flat surfaces of the substrate 12. Since the projecting section 16A has the broader width WA than the other projecting section 16B has, the influence on In concentration over the whole region of an active region 36A is small, even when the In concentration above both end sections of the projecting section 16A becomes lower, while when the In concentration above both end sections of the projecting section 16B decreases, the influence on In concentration in the whole region of an active region 36B becomes larger and In concentration in the active region 36B becomes lower than that in the active region 36A above the projecting section 16A. Consequently, the laser light B, emitted from the active region 36B, becomes shorter in wavelength than the laser light A emitted from the active region 36A.
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题：提供一种由氮化镓基多光束半导体激光元件组成的氮化镓基半导体发光元件。 解决方案：GaN基多光束半导体激光元件10在阶梯状基板12上设置有GaN基叠层结构14.基板12的突出部分16A和16B分别具有相同的高度和宽度WA和WB，其中 比宽度WA窄。 在基板12上，与突出部分16A和16B的两端部附近的部分相比，突起部分16A和16B上方的GaInN有源层22的部分的浓度比上述第22层的部分 由于突出部分16A具有比另一个突出部分16B具有更宽的宽度WA，因此即使在两者上方的In浓度都在In有源区域36A的整个区域上对In浓度的影响较小 突出部16A的端部变低，而当突出部16B的两端部的In浓度降低时，对有源区域36B的整个区域的In浓度的影响变大，有源区域36B的In浓度 变得低于突出部16A上方的有源区域36A中的位置。 因此，从有源区域36B发射的激光B的波长比从有源区域36A发射的激光A短。

    METHOD OF GROWING SEMICONDUCTOR LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    42.
    发明专利
    METHOD OF GROWING SEMICONDUCTOR LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT 失效

    公开(公告)号：JP2002008980A

    公开(公告)日：2002-01-11

    申请号：JP2000182037

    申请日：2000-06-16

    Applicant: SONY CORP

    Inventor： NAKAJIMA HIROSHI ,  HASHIMOTO SHIGEKI ,  ASAZUMA YASUNORI

    IPC: C30B29/40 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01S5/02 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a method of growing a semiconductor layer, which suppresses the size of produced voids in the Pendeo growth method and also the inclination of the c-axis of the crystal in the semiconductor layer to reduce defects in this layer, and to provide a method of manufacturing semiconductor light-emitting elements using the same. SOLUTION: A first semiconductor layer 12b of a III-V compound, such as GaN, is projectedly formed on a substrate 11, and a second semiconductor layer 12 of a III-V compund, such as GaN, is grown in vapor phase on the first layer 12b surface at a higher growth rate Gb in a main surface inward direction of the substrate than the growth rate Ga in the vertical direction with respect to the main surface of the substrate with the pressure in a vapor phase growth reactor chamber being controlled, so that this pressure is higher than 400 Torrs, whereby the side S of the underside of the second semiconductor layer 12 makes an acute angle with its underside so that the side S forms a (11-22) plane, etc.

    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT
    43.
    发明专利
    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT 失效

    公开(公告)号：JP2001326385A

    公开(公告)日：2001-11-22

    申请号：JP2000148644

    申请日：2000-05-16

    Applicant: SONY CORP

    Inventor： HASHIMOTO SHIGEKI ,  NAKAJIMA HIROSHI ,  ASAZUMA YASUNORI

    IPC: H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-quality nitride III-V compound semiconductor light-emitting element, by which problem of nonuniformity in mixed crystal composition of a nitride III-V compound semiconductor layer is settled, especially for improved uniformity in mixed crystal, when indium is contained. SOLUTION: A manufacturing method of a semiconductor light-emitting element such as a laser diode is provided which comprises a process where, by an organic metal chemical vapor-phase growth method, the nitride III-V compound semiconductor layer containing indium and the like is crystal-grown and formed. Here, the flow velocity of material gas 34 containing ammonia gas and the like in a reactive tube 30 for crystal growth is set to 3-5 m/s while the pressure in the reactive tube is set to higher than a normal pressure, to form at least a part of the III-V compound semiconductor layer such as a light- emitting layer.

    GROWING METHOD FOR SEMICONDUCTOR
    47.
    发明专利
    GROWING METHOD FOR SEMICONDUCTOR 失效

    公开(公告)号：JPH1032349A

    公开(公告)日：1998-02-03

    申请号：JP20305596

    申请日：1996-07-12

    Applicant: SONY CORP

    Inventor： NAKAMURA FUMIHIKO ,  ASAZUMA YASUNORI ,  KAWAI HIROHARU

    IPC: H01L21/20 ,  H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343 ,  H01L33/00 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a growing method of a semiconductor, which can prevent the deterioration of the III-V semiconductor layer in a nitride system containing In, when it is required to grow the III-V compound semiconductor layer in another nitride system on the III-V compound semiconductor layer in the nitride system containing In such as GaInN layer and the growing temperature higher than the growing temperature of the original layer. SOLUTION: When a GaInN/GaN quantum well structure if formed, after a GaInN layer 5 is grown at the growing temperature of 700-850 deg.C, a GaN cap layer 6 is grown at the temperature equivalent to the growing temperature of the GaInN layer 5 so as to cover the surface of the GaInN layer. The thickness of the GaN cap layer 6 is made to be 30nm or more. Thereafter the growing temperature is made to rise up to, e.g. 100 deg.C, and GnN layer 7 is grown. In place of the GaN cap layer 6, an Alx Ga1-x N cap layer (where, 0

    THERMAL PROCESSING METHOD OF NITRIDE COMPOUND SEMICONDUCTOR
    48.
    发明专利
    THERMAL PROCESSING METHOD OF NITRIDE COMPOUND SEMICONDUCTOR 失效

    公开(公告)号：JPH1012624A

    公开(公告)日：1998-01-16

    申请号：JP18141796

    申请日：1996-06-21

    Applicant: SONY CORP

    Inventor： KAWAI HIROHARU ,  ASAZUMA YASUNORI ,  MIYAJIMA TAKAO

    IPC: H01L21/324 ,  H01L21/203 ,  H01L21/26 ,  H01L33/32

    Abstract: PROBLEM TO BE SOLVED: To provide a thermal processing method of a nitride compound semiconductor that ensures a p type nitride compound semiconductor having a higher carrier concentration compared with the prior art. SOLUTION: After a nitride compound semiconductor such as GaN where an acceptor impurity such as Mg is doped is grown by an organic metal chemical vapor growing method, in an atmosphere comprising inert gas such as nitrogen containing hydrocarbon that does not release nitrogen in a nitrogen release process the nitride compound semiconductor is thermally processed. For the nitrogen containing hydrocarbon, a material which contains a hydro group, an alkyl group and/or a phenyl group combined with nitrogen, having the number of the hydro groups being less than the sum of the number of the alkyl group and the number of the phenyl group for example, trimethylamine, is used.

    GROWTH METHOD OF NITRIDE COMPOUND SEMICONDUCTOR
    49.
    发明专利
    GROWTH METHOD OF NITRIDE COMPOUND SEMICONDUCTOR 失效

    公开(公告)号：JPH104211A

    公开(公告)日：1998-01-06

    申请号：JP17704296

    申请日：1996-06-17

    Applicant: SONY CORP

    Inventor： KAWAI HIROHARU ,  ASAZUMA YASUNORI ,  NAKAMURA FUMIHIKO

    IPC: C23C16/34 ,  C30B25/02 ,  C30B29/38 ,  H01L21/04 ,  H01L21/205 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00 ,  H01S3/18

    Abstract: PROBLEM TO BE SOLVED: To provide a nitride compound semiconductor growth method with which a p-type nitride compound semiconductor of high carrier density can be obtained, even when heat treatment for activation of impurities is not conducted after growth of the nitride compound semiconductor. SOLUTION: When a p-type nitride compound semiconductor 2 such as p-type GaN, etc., is grown by an organic metal chemical vapor growth method, nitride raw material, which does not discharge hydrogen in a nitrogen discharging process, is used as nitrogen raw material, and the semiconductor is grown in an inert gas atmosphere. A nitrogen compound, containing a hydro group, an alkyl group and/or a phenyl group and having the number of hydro group smaller than the sum of the number of alkyl group and the number of phenyl group, is used as the nitrogen raw material.

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