中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

51 records (took 0.033 seconds)

    Process for manufacturing a through insulated interconnection in a body of semiconductor material
    43.
    发明公开
    Process for manufacturing a through insulated interconnection in a body of semiconductor material 有权
    通过分离的化合物中的半导体材料的本体制造的方法

    公开(公告)号：EP2560199A1

    公开(公告)日：2013-02-20

    申请号：EP12190466.8

    申请日：2002-04-05

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo ,  Ferrari, Paolo

    IPC: H01L21/768 ,  H01L23/48

    CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05572 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

    Abstract: The process for manufacturing a through insulated interconnection is performed by forming, in a body (1) of semiconductor material, a trench (2) extending from the front (7) of the body (1) for a thickness portion thereof; filling the trench with dielectric material (6); thinning the body starting from the rear (5) until the trench (2), so as to form an insulated region (3) surrounded by dielectric material; and forming a conductive region (30b) extending inside said insulated region (3) between the front and the rear of the body and having a higher conductivity than the first body (1). The conductive region (8, 25, 28, 30b) includes a heavily doped semiconductor region (30b), made prior to filling of the trench.

    Abstract translation: 通过绝缘互连制造过程中进行，通过形成在一个主体（1）的半导体材料，沟槽（2）从前面（7）延伸的本体（1），用于其厚度部分; 用介电材料填充所述沟槽（6）; 减薄体从后部（5）开始直到沟槽（2），从而在绝缘区，以形成（3）由介电材料包围; 和形成导电区域（30B）延伸的前和所述主体的所述后部之间在所述绝缘区域（3）和具有比所述第一主体上的较高的导电性（1）。 导电区域（8，25，28，30B）包括一个重掺杂半导体区域（30B）填充沟槽之前进行。

    Photovoltaic device with concentration and spectral splitting of collected light beam
    44.
    发明公开
    Photovoltaic device with concentration and spectral splitting of collected light beam 有权
    用浓度和光束的光谱分离光生伏打装置收集

    公开(公告)号：EP2141748A3

    公开(公告)日：2010-02-17

    申请号：EP09163201.8

    申请日：2009-06-19

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo

    IPC: H01L31/052 ,  H01L31/0232

    CPC classification number: H01L31/0232 ,  H01L31/0547 ,  Y02E10/52

    Abstract: A photovoltaic device comprising a plurality of photovoltaic cells of different spectral sensitivity, disposed on respective areas of inner surfaces of a hermetically sealed box-like body provided with a transparent pupil with antireflection treatment of its surface, is proposed. Through the pupil, a concentrated beam of collected radiation enters the device and a plurality of dichroic filters arranged in cascade on the optical axis of the transparent input pupil split the concentrated beam in distinct beams of different spectrum. As many mirrors, each having multiple reflecting surfaces, intercept respective beams of spectral subdivision, and the multiple reflecting surfaces redirect the radiation in form of a plurality of reflected beams each directed to illuminate the active area of a photovoltaic cells of a respective array.

    Integrated chemical microreactor with separated channels for confining liquids inside the channels and manufacturing process thereof
    48.
    发明公开
    Integrated chemical microreactor with separated channels for confining liquids inside the channels and manufacturing process thereof 审中-公开
    集成化学微反应器与用于封闭它的制备流体和过程分开的通道

    公开(公告)号：EP1535665A1

    公开(公告)日：2005-06-01

    申请号：EP03425771.7

    申请日：2003-11-28

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo ,  Villa, Flavio Francesco ,  Barlocchi, Gabriele

    IPC: B01L3/00 ,  B81B3/00

    CPC classification number: B01L3/502715 ,  B01L3/5025 ,  B01L3/502707 ,  B01L7/52 ,  B01L2200/027 ,  B01L2200/12 ,  B01L2300/044 ,  B01L2300/0816 ,  B01L2300/1827

    Abstract: The microreactor (22) is formed by a sandwich including a first body (1), an intermediate sealing layer (20) and a second body (15). A buried channel (3) extends in the first body (1) and communicates with the surface (12) of the first body (1) through a first and a second apertures (14a, 14b). A first and a second reservoirs (16a, 16b) are formed in the second body (15) and are at least partially aligned with the first and second apertures (14a, 14b). The sealing layer (20) separates the first aperture (14a) from the first reservoir (16a) and the second aperture (14b) from the second reservoir (16b), thereby avoiding contamination of liquids contained in the buried channel from the outside and from any adjacent buried channels (3).

    Abstract translation: 微反应器（22）通过夹心包括第一主体（1）至中间密封层（20）和第二本体（15）形成。 掩埋通道（3）在所述第一主体（1）延伸，并且通过第一和第二孔与所述第一主体（1）的表面（12）进行通信（14A，14B）。 第一和第二储存器（16A，16B）形成在所述第二主体（15）和至少部分地与所述第一和第二孔对齐的（14A，14B）。 密封层（20）分离从所述第一储存器（16A）的第一孔（14a）和所述第二孔（14b）的从所述第二储存器（16B），从而避免从外部和从在掩埋沟道所含液体污染 相邻的任何埋入通道（3）。

    Micro-electro-mechanical device, in particular micro-actuator for hard-disk drive, and manufacturing process thereof
    49.
    发明公开
    Micro-electro-mechanical device, in particular micro-actuator for hard-disk drive, and manufacturing process thereof 有权
    微机电元件，特别是微致动器为硬盘单元，以及处理其制备

    公开(公告)号：EP1375416A1

    公开(公告)日：2004-01-02

    申请号：EP02425407.0

    申请日：2002-06-20

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo ,  Murari, Bruno ,  Ferrari, Paolo ,  Sassolini, Simone

    IPC: B81B3/00

    CPC classification number: B81B3/0021 ,  H02N1/006

    Abstract: A micro-electro-mechanical device (20) formed by a body (4) of semiconductor material having a thickness and defining a mobile part (23, 24, 31) and a fixed part (3, 25, 30). The mobile part is formed by a mobile platform (23), supporting arms (31) extending from the mobile platform to the fixed part (3, 25, 30), and by mobile electrodes (24) fixed to the mobile platform. The fixed part has fixed electrodes (25) facing the mobile electrodes (24), a first biasing region (3) fixed to the fixed electrodes, a second biasing region (30) fixed to the supporting arms (31), and an insulation region (6) of insulating material extending through the entire thickness of the body (4). The insulation region (6) insulates electrically at least one between the first and the second biasing regions (3, 30) from the rest of the fixed part.

    Abstract translation: 通过具有一定厚度和一个移动限定部分（23，24，31）和固定部件（3，25，30）的半导体材料的本体（4）形成的微机电装置（20）。 移动部分由可移动平台（23）而形成，支持从移动平台延伸到所述固定部件（3，25，30）臂（31），并且通过可移动电极（24）固定到所述移动平台。 固定部分具有固定的电极（25）的面向所述移动电极（24），第一偏置区域（3）固定到所述固定电极，固定在所述支撑臂（31）的第二偏置区域（30），并在绝缘区域 （6）绝缘材料穿过所述主体（4）的整个厚度延伸的。 绝缘区域（6）电绝缘所述第一，并从固定部分的其余部分的第二偏置区域（3，30）之间的至少一个。

    Process for manufacturing a through insulated interconnection in a body of semiconductor material
    50.
    发明公开
    Process for manufacturing a through insulated interconnection in a body of semiconductor material 有权
    一种用于制备经由穿过半导体主体分离和相关联的半导体器件的工艺

    公开(公告)号：EP1351288A1

    公开(公告)日：2003-10-08

    申请号：EP02425207.4

    申请日：2002-04-05

    Applicant: STMicroelectronics S.r.l.

    Inventor： Mastromatteo, Ubaldo ,  Ferrari, Paolo

    IPC: H01L21/768

    CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05572 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

    Abstract: The process for manufacturing a through insulated interconnection is performed by forming, in a body (1) of semiconductor material, a trench (2) extending from the front (7) of the body (1) for a thickness portion thereof; filling the trench with dielectric material (6); thinning the body starting from the rear (5) until the trench (2), so as to form an insulated region (3) surrounded by dielectric material; and forming a conductive region (8, 25, 28, 30b) extending inside said insulated region (3) between the front and the rear of the body and having a higher conductivity than the first body (1). The conductive region (8, 25, 28, 30b) includes a metal region (25, 28) extending in an opening (24) formed inside the insulated region (3) or of a heavily doped semiconductor region (30b), made prior to filling of the trench.

    Abstract translation: 通过绝缘互连制造过程中进行，通过形成在一个主体（1）的半导体材料，沟槽（2）从前面（7）延伸的本体（1），用于其厚度部分; 用介电材料填充所述沟槽（6）; 减薄体从后部（5）开始直到沟槽（2），从而在绝缘区，以形成（3）由介电材料包围; 和形成导电区域（8，25，28，30B）延伸在所述绝缘区域（3）的前部和主体的后部，并且具有比所述第一主体上的较高的电导率（1）之间。 导电区域（8，25，28，30B）包括上开口延伸在金属区（25，28）（24）的绝缘区域内形成（3）或重掺杂的半导体区（30B）由之前 填充沟槽。

Patent Agency Ranking