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    진동 센서 및 그 제조 방법
    43.
    发明公开
    진동 센서 및 그 제조 방법 有权
    振动传感器及制造传感器的方法

    公开(公告)号：KR1020090039750A

    公开(公告)日：2009-04-22

    申请号：KR1020097002569

    申请日：2007-07-20

    Applicant: 오므론 가부시키가이샤

    Inventor： 카사이타카시 ,  호리모토야스히로 ,  카토후미히토 ,  무네치카마사키 ,  와카바야시슈이치 ,  타카하시토시유키 ,  이누가마사유키

    IPC: H01L29/84 ,  H01L21/306 ,  H04R19/04

    CPC classification number: B81C1/00182 ,  B81B2201/0257 ,  B81B2201/0285 ,  B81B2203/0127 ,  B81B2203/0353 ,  H04R19/005 ,  H04R19/04

    Abstract: A protective film (20) of an SiO2 thin film is formed on a front surface of an Si substrate (12), and a part of the protective film (20) is removed to form an etching window (22). A sacrifice layer (23) of polycrystalline Si is formed in the etching window (22). A protective film (24) of SiO2 is formed on the front surface of the Si substrate (12) from the top of the sacrifice layer (23), and a thin film (13) as an element formed of polycrystalline Si is further formed on the protective film (24). A backside etching window (26) is opened in a protective film (21) on the back side of the Si substrate (12). The Si substrate (12) is soaked in TMAH to perform crystal anisotropic etching in the Si substrate (12) through the backside etching window (26) to provide a through-hole (14) in the Si substrate (12). When the sacrifice layer (23) is exposed to the interior of the through-hole (14), the sacrifice layer (23) is etching-removed to provide a gap (19) between the protective film (24) and the Si substrate (12) and crystal anisotropic etching of the Si substrate (12) is carried out from its front side and backside.

    Abstract translation: 在Si衬底（12）的前表面上形成SiO 2薄膜的保护膜（20），并且去除保护膜（20）的一部分以形成蚀刻窗口（22）。 在蚀刻窗（22）中形成多晶Si的牺牲层（23）。 在牺牲层（23）的顶部的Si衬底（12）的前表面上形成SiO 2的保护膜（24），并且作为由多晶Si形成的元件的薄膜（13）还形成在 保护膜（24）。 在Si衬底（12）的背侧上的保护膜（21）中打开背面蚀刻窗（26）。 Si衬底（12）浸泡在TMAH中，通过背面蚀刻窗（26）在Si衬底（12）中进行晶体各向异性蚀刻，以在Si衬底（12）中提供通孔（14）。 当牺牲层（23）暴露于通孔（14）的内部时，牺牲层（23）被蚀刻去除，以在保护膜（24）和Si衬底（24）之间提供间隙（19） 12）和Si衬底（12）的晶体各向异性蚀刻从其正面和背面进行。

    Physical Quantity Detection Device, Electronic Apparatus, and Moving Object
    47.
    发明申请
    Physical Quantity Detection Device, Electronic Apparatus, and Moving Object 审中-公开
    物理量检测装置，电子装置和移动物体

    公开(公告)号：US20160075549A1

    公开(公告)日：2016-03-17

    申请号：US14854746

    申请日：2015-09-15

    Applicant: Seiko Epson Corporation

    Inventor： Shinya Aoki

    IPC: B81B3/00

    CPC classification number: B81B3/0086 ,  B81B2201/0285 ,  B81B2203/04

    Abstract: A physical quantity detection device includes a semiconductor element and a physical quantity detection vibrator element a portion of which overlaps the semiconductor element in a plan view of the semiconductor element. The physical quantity detection vibrator element includes a drive portion including a drive electrode, and a detection portion. At least a partial region of the drive electrode does not overlap the semiconductor element in the plan view of the semiconductor element.

    Abstract translation: 物理量检测装置包括在半导体元件的平面图中半导体元件和物理量检测振动器元件的一部分与半导体元件重叠。 物理量检测振动器元件包括驱动部分，其包括驱动电极和检测部分。 在半导体元件的平面图中，驱动电极的至少一部分区域不与半导体元件重叠。

    FUNCTIONAL ELEMENT, ELECTRONIC APPARATUS, AND MOVING OBJECT
    48.
    发明申请
    FUNCTIONAL ELEMENT, ELECTRONIC APPARATUS, AND MOVING OBJECT 有权
    功能元件，电子设备和移动对象

    公开(公告)号：US20140367806A1

    公开(公告)日：2014-12-18

    申请号：US14305259

    申请日：2014-06-16

    Applicant: Seiko Epson Corporation

    Inventor： Satoru TANAKA

    IPC: B81B3/00 ,  B81B7/00

    CPC classification number: B81B3/0097 ,  B81B7/0006 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0285

    Abstract: A functional element includes a first electrode section, a second electrode section, a first wiring line connected to the first electrode section, and a second wiring line connected to the second electrode section, the first wiring line is provided with at least one first intersecting section intersecting with a wiring line other than the second wiring line, the second wiring line includes at least one second intersecting section intersecting with a wiring line other than the first wiring line, and a difference between a number of the first intersecting sections and a number of the second intersecting sections satisfies a condition one of equal to and lower than 50% with respect to larger one of the number of the first intersecting sections and the number of the second intersecting sections.

    Abstract translation: 功能元件包括第一电极部分，第二电极部分，连接到第一电极部分的第一布线和连接到第二电极部分的第二布线，第一布线设置有至少一个第一相交部分 与第二布线以外的布线相交，第二布线包括与第一布线以外的布线交叉的至少一个第二交叉部，第一相交部的数量与第 第二交叉部分相对于第一交叉部分的数量和第二交叉部分的数量中的较大的一个满足等于或小于50％的条件一。

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