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    Electrostatically actuated devices
    41.
    发明公开
    Electrostatically actuated devices 有权
    Elektrostatischgesteuerte Vorrichtungen

    公开(公告)号：EP1199174A1

    公开(公告)日：2002-04-24

    申请号：EP01308476.9

    申请日：2001-10-03

    Applicant: Xerox Corporation

    Inventor： Kubby, Joel A. ,  Eklund, Elliott A. ,  Gulvin, Peter M.

    IPC: B41J2/14

    CPC classification number: F04B43/043 ,  B41J2/14314 ,  B81B3/0051 ,  B81B2201/036 ,  B81B2201/045 ,  B81B2201/052 ,  B81B2203/0127 ,  B81B2203/053

    Abstract: An electrostatic injet head (10) having an inner structure (56) on the bottom of the top (53) of the membrane (50) for isolating it for the conductor (40), and an outer structure (58), away from the center of the membrane (50), on the bottom of the top (53) of the membrane (50) to stop excessive flexing of the membrane (50) leading to inter-electrode contact. The invention can be used in various silicon-based actuators, including fluid pumps and optical switching devices.

    Abstract translation: 在所述膜（50）的顶部（53）的底部具有用于将所述导体（40）隔离的内部结构（56）的静电喷射头（10）和远离所述导体（40）的外部结构（58） 在膜（50）的顶部（53）的底部上的膜（50）的中心，以阻止膜（50）的过度弯曲，导致电极间接触。 本发明可用于各种基于硅的致动器，包括流体泵和光学开关装置。

    A through hole formation method and a substrate provided with a through hole
    42.
    发明公开
    A through hole formation method and a substrate provided with a through hole 失效
    一种用于通孔的制造方法，以及具有这样的通孔的硅衬底

    公开(公告)号：EP0886307A2

    公开(公告)日：1998-12-23

    申请号：EP98111247.7

    申请日：1998-06-18

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Ohkuma, Norio

    IPC: H01L21/306 ,  B41J2/00

    CPC classification number: B81C1/00087 ,  B41J2/16 ,  B41J2/1629 ,  B41J2/1642 ,  B81B2201/052

    Abstract: A method of Si anisotropic etching makes it possible to relax the restrictions imposed upon the processing configuration of an Si substrate provided with the 〈100〉 plane orientation. This Si anisotropic etching method can be preferably used for the formation of the ink supply opening of an ink jet head, for example. When an Si material (Si substrate) having the 〈100〉 crystal plane orientation is processed by this anisotropic etching method, it is arranged to give heat treatment to such Si material in advance before etching. Thus, the processed section can be obtained in a bent configuration formed by the two 〈111〉 planes of crystal plane orientation. Therefore, the etching initiation surface is made smaller than that needed for the conventional art even when the same width should be obtained for a penetrating process, hence making a chip smaller accordingly for the reduction of costs.

    Abstract translation: 硅的各向异性蚀刻的方法，使得可以缓和在Si的处理配置所施加的限制基片设置有与郎＆100响面取向。 该Si各向异性蚀刻方法，可以优选地用于喷墨头的供墨开口的形成中，例如。 当具有与郎＆100响与晶面取向Si材料（Si衬底）由该各向异性蚀刻方法处理，它被布置成给热处理蚀刻之前预先求Si材料。 因此，经处理的部分可以在由两个＆郎＆111＆形成的弯曲结构而获得响＆晶面取向的平面。 因此，蚀刻引发表面是由比所需要的现有技术，即使在相同的宽度应当获得用于穿透过程，因此制造更小的芯片为相应的成本的降低更小。

    SLOTTED FORMING METHODS AND FLUID EJECTING DEVICE
    46.
    发明申请
    SLOTTED FORMING METHODS AND FLUID EJECTING DEVICE 审中-公开
    液体成型方法和流体喷射装置

    公开(公告)号：WO2005092785A1

    公开(公告)日：2005-10-06

    申请号：PCT/US2005/004988

    申请日：2005-02-16

    Applicant: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. ,  POLLARD, Jeffrey R. ,  MILLER, Michael D.

    Inventor： POLLARD, Jeffrey R. ,  MILLER, Michael D.

    IPC: B81C1/00

    CPC classification number: B81C1/00087 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B81B2201/052

    Abstract: The described embodiments relate to slotted substrates (300) and methods of forming same. One exemplary method forms a first slot portion (410a) into a first surface (302) of a substrate (300), the first slot portion (410a) defining a footprint (404) at the first surface (302). The method also forms a second slot portion (410a 1 ) through the first slot portion (410a); and, forms a third slot portion (410a 2 ) through a second surface (303) of the substrate (300) sufficiently to intercept the second slot portion (410a 1 ) to form a fluid-handling slot (305) through the substrate (300).

    Abstract translation: 所描述的实施例涉及开槽衬底（300）及其形成方法。 一种示例性方法形成到衬底（300）的第一表面（302）中的第一槽部分（410a），第一槽部分（410a）在第一表面（302）处限定了足迹（404）。 该方法还通过第一槽部（410a）形成第二槽部（410a1）。 并且通过所述基板（300）的第二表面（303）形成足以拦截所述第二槽部（410a1）以形成通过所述基板（300）的流体处理槽（305）的第三槽部（410a2）。

    PROCESS FOR FILLING ETCHED HOLES
    49.
    发明公开
    PROCESS FOR FILLING ETCHED HOLES 审中-公开
    填充蚀刻孔的过程

    公开(公告)号：EP3259134A1

    公开(公告)日：2017-12-27

    申请号：EP16702736.6

    申请日：2016-02-03

    Applicant: Memjet Technology Limited

    Inventor： NORTH, Angus ,  O'REILLY, Ronan ,  MCAVOY, Gregory

    IPC: B41J2/16 ,  B81C1/00

    CPC classification number: B81C1/00611 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1639 ,  B41J2/1645 ,  B81B2201/052 ,  B81B2203/0353 ,  B81C2201/0104 ,  B81C2201/0121

    Abstract: A process for filling one or more etched holes defined in a frontside surface of a wafer substrate. The process includes the steps of: (i) depositing a layer of a thermoplastic first polymer onto the frontside surface and into each hole; (ii) reflowing the first polymer; (iii) exposing the wafer substrate to a controlled oxidative plasma; (iv) optionally repeating steps (i) to (iii); (v) depositing a layer of a photoimageable second polymer; (vi) selectively removing the second polymer from regions outside a periphery of the holes using exposure and development; and (vii) planarizing the frontside surface to provide holes filled with a plug comprising the first and second polymers, which are different than each other. Each plug has a respective upper surface coplanar with the frontside surface.

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